共查询到20条相似文献,搜索用时 15 毫秒
1.
Operation of the first AlSbAs/GaSb p-channel modulation-doped field-effect transistor (MODFET) is reported. Devices with 1-μm gate length exhibit transconductance of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure were 260 cm2/V-s and 1.8×10 12 cm-2 at room temperature and 1700 cm2/V-s and 1.4×1012 cm-2 at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications 相似文献
2.
A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K -factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions 相似文献
3.
The authors have fabricated the first gate-self-aligned germanium MISFETs and have obtained record transconductance for germanium FETs. The devices fabricated are p-channel, inversion-mode germanium MISFETs. A germanium-oxynitride gate dielectric is used and aluminum gates, serve as the mask for self-aligned source and drain implants. A maximum room-temperature transconductance of 104 mS/mm was measured for a 0.6-μm gate length. A hole inversion channel mobility of 640 cm2 /V-s was calculated using transconductance and capacitance data from long-channel devices. This large hole channel mobility suggests that germanium may be an attractive candidate for CMOS technology 相似文献
4.
Boissenot P. Delhaye E. Maluenda J. Frijlink P. Varin C. Deschamps F. Lecuru I. 《Electron Device Letters, IEEE》1990,11(7):282-284
WN-gate, p-channel AlGaAs-GaAs heterostructure insulated-gate field-effect transistors (HIGFETs) fabricated on a metalorganic vapor-phase epitaxy (MOVPE) wafer are discussed. A self-aligned Mg ion implantation (80 keV, 6×1013 cm-2) annealed at 850°C in an arsine atmosphere and the control of the SiO2 sidewall dimensions allow the fabrication of p-channel HIGFETs with a gate length smaller than 0.5 μm with low subthreshold current. P-channel HIGFETs with 0.4-μm gate lengths exhibit extrinsic transconductances as high as 127 mS/mm at 77 K and 54 mS/mm at 300 K 相似文献
5.
《Electron Device Letters, IEEE》1985,6(12):645-647
Self-aligned gate by ion implantation n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulated-gate field-effect transistors (HIGFET's) have been fabricated on the same planar wafer surface for the first time. Enhancement-mode n-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 218 mS/mm at room temperature and 385 mS/mm at 77 K. Enhancement-mode p-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 28 mS/mm at room temperature and 59 mS/mm at 77 K. There are the highest transconductance values ever reported on a p-channel FET device. 相似文献
6.
Ismail K. Meyerson B.S. Rishton S. Chu J. Nelson S. Nocera J. 《Electron Device Letters, IEEE》1992,13(5):229-231
The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V-s and 2.5×1012 (1.5×1012 ) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors 相似文献
7.
Eugster C.C. Broekaert T.P.E. del Alamo J.A. Fonstad C.G. 《Electron Device Letters, IEEE》1991,12(12):707-709
An InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides is reported. The heterostructure was grown by MBE on InP and contains a 30-Å InAs channel. A 2-μm-gate-length device displays well-behaved characteristics, showing sharp pinch-off (V th=0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in a breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations which, over a certain range of gate voltage, strongly indicate that the electron channel resides in the InAs layer 相似文献
8.
Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si0.4Ge0.6 heterostructure with a Hall mobility of 1750 cm2/Vs (30,900 cm2/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with Lg=0.1 μm displayed an average peak extrinsic transconductance (g(mext)) of 439 mS/mm, at a drain-to-source bias voltage (Vds) of -0.6 V, with the best device having a value of g(mext)=488 mS/mm. At 77 K, values as high as g(mext)=687 mS/mm were obtained at a bias voltage of only Vds=-0.2 V. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz at Vds=-0.6 V and -1.0 V, respectively 相似文献
9.
Arafa M. Fay P. Ismail K. Chu J.O. Meyerson B.S. Adesida I. 《Electron Device Letters, IEEE》1996,17(3):124-126
We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K 相似文献
10.
Chen C.L. Mahoney L.J. Nichols K.B. Brown E.R. Gramstorff B.F. 《Electron Device Letters, IEEE》1996,17(8):413-415
A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is demonstrated. Neither the GaAs conducting channel nor the gate insulator was doped, and a Be self-aligned implant was used to lower the source and drain series resistance. For a MISFET with a 1.5-μm gate length, the transconductance is 22 mS/mm and the maximum drain current is 120 mA/mm obtained at -8 V of gate bias. The measured unity-current-gain cut-off frequency fT is 2.0 GHz 相似文献
11.
Werking J.D. Bolognesi C.R. Chang L.-D. Nguyen C. Hu E.L. Kroemer H. 《Electron Device Letters, IEEE》1992,13(3):164-166
The authors report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFETs). Devices with electron sheet concentrations of 3.8×1012 cm-2 and low-field electron mobilities of 21000 cm2/V-s have been realized through the use of Te δ-doping sheets in the upper AlSb barrier. One device with a 2.0-μm gate length showed a peak extrinsic transconductance of 473 mS/mm at room temperature. Gate leakage current, operating current density, and extrinsic transconductance were found to decrease with decreasing temperature 相似文献
12.
SiGe pMOSFET's with gate oxide fabricated by microwave electroncyclotron resonance plasma processing
Li P.W. Yang E.S. Yang Y.F. Chu J.O. Meyerson B.S. 《Electron Device Letters, IEEE》1994,15(10):402-405
A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si0.86Ge0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained 相似文献
13.
《Electron Device Letters, IEEE》1984,5(9):379-381
A new semiconductor-insulator-semiconductor field-effect transistor has been fabricated. The device consists of a heavily doped n-type GaAs gate with undoped (Al,Ga)As as the gate insulator, on an undoped GaAs layer. This structure gives the device a natural threshold voltage near zero, well suited for low-voltage logic. The threshold voltage is, to first order, independent of Al mole fraction and thickness of the (Al,Ga)As layer. The layers were grown by MBE and devices fabricated using a self-aligned technique involving ion-implantation and rapid thermal annealing. A transconductance of 240 mS/mm and a field-effect mobility of about 100 000 cm2/V-s were achieved at 77 K. 相似文献
14.
Kiehl R.A. Hallali P.E. Yates J. Tischler M.A. Potemski R.M. Cardone F. 《Electron Device Letters, IEEE》1991,12(10):530-532
The fabrication and electrical characteristics of p-channel AlGaAs/GaAs heterostructure FETs with self-aligned p+ source-drain regions formed by low-energy co-implantation of Be and F are reported. The devices utilize a sidewall-assisted refractory gate process and are fabricated on an undoped AlGaAs/GaAs heterostructure grown by MOVPE. Compared with Be implantation alone, the co-implantation of F+ at 8 keV with 2×1014 ions/cm2 results in a 3× increase in the post-anneal Be concentration near the surface for a Be+ implantation at 15 keV with 4×1014 ions/cm2. Co-implantation permits a low source resistance to be obtained with shallow p+ source-drain regions. Although short-channel effects must be further reduced at small gate lengths, the electrical characteristics are otherwise excellent and show a 77-K transconductance as high as 207 mS/mm for a 0.5-μm gate length 相似文献
15.
Drummond T.J. Kopp W. Arnold D. Fischer R. Morko? H. Erickson L.P. Palmberg P.W. 《Electronics letters》1983,19(23):986-988
Undoped Al0.5Ga0.5As is used as an insulator layer in the fabrication of MIS-type buried-interface field-effect transistors (BIFETs). The devices had a 2.5 ?m-long gate and an insulator layer 1000 ? thick. When operated in an accumulation mode the transconductance and maximum current increased from 21 mS/mm and 77 mA/mm at 300 K to 40 mS/mm and 138 mA/mm at 77 K, respectively. The maximum possible 77 K transconductance is calculated as approximately 130 mS/mm. These preliminary experimental results are the best yet reported for a GaAs MIS-type device and represent the first report of enhanced device performance at cryogenic temperatures as a result of an increased electron saturation velocity. 相似文献
16.
《Electron Device Letters, IEEE》1987,8(5):220-222
An enhancement-mode insulated-gate field-effect transistor (FET) has been fabricated by a self-aligned technique on semi-insulating InP substrate with an AlGaAs gate barrier grown by molecular beam epitaxy (MBE). A device with a gate length of 1 µm exhibited a transconductance of 134 mS/mm and a threshold voltage of 0.9 V. The characteristics are insensitive to light down to 77 K and hysteresis is completely absent. The performance of this device shows that the fabrication of enhancement-mode devices on severely lattice-mismatched heterostructures is feasible. 相似文献
17.
N-type doping of silicon in InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures grown by molecular beam epitaxy (MBE) for the (311)A orientation has been achieved by using the planar-doping technique. An electron mobility as high as 50000 cm2 V-s with a sheet carrier concentration of 1.9×1012/cm2 at 77 K is reported. MODFETs with 1.2-μm gate length exhibit an extrinsic transconductance of 400 mS/mm and a maximum drain current of 485 mA/mm. The results are comparable to those of MODFETs grown on (100) InP substrates. The results point to the possibility of making p-n multi layer structures with all-silicon doping 相似文献
18.
In this paper, the performances of a new δ-doping field-effect transistor utilizing an InGaP/GaAs camel-gate structure by theoretical and experimental analysis will be reported. An analytical model related to drain saturation current, transconductance, potential barrier height, gate-to-source depletion capacitance, and unit current gain frequency is developed to explain the device performances. The employments of n+-GaAs/p+-InGaP/n-GaAs heterostructure gate and the δ-doping channel with heavy-doping level were used to improve transconductance linearity and enhance current drivability. For a 1×100 μm2 device, the experimental results show that a drain saturation current of 1120 mA/mm, a maximum transconductance of 240 mS/mm, and a large Vgs swing larger than 3.5 V with the transconductance higher than 200 mS/mm are obtained. In addition, the measured unit current gain frequency ft is 22 GHz. These experimental results are consistent with theoretical analysis. 相似文献
19.
A field-effect transistor with a 2 ?m Au gate was fabricated on a selectively doped InP/GaInAs heterostructure grown using chloride transport vapour-phase epitaxy. Complete pinch-off was observed, and transconductance of 90 and 160 mS/mm were measured at 295 and 77 K, respectively. From analysis of the drain I/V characteristic, two-dimensional electron gas at the interface was revealed to be the dominant factor for the channel current. This is the first report of a successful preparation of an n+ InP/n? GaInAs heterostructure for the selectively doped field-effect transistor. 相似文献
20.
Rajagopalan K. Droopad R. Abrokwah J. Zurcher P. Fejes P. Passlack M. 《Electron Device Letters, IEEE》2007,28(2):100-102
In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm2/Vmiddots and g m exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage Vth, maximum extrinsic transconductance gm, saturation current Idss , on-resistance Ron, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance gmi of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance 相似文献