Grain Growth Control in Sb2O3-Doped Zinc Oxide

Microstructure development in Sb₂O₃-doped ZnO was studied to evaluate the influence of inversion boundaries (IBs) on ZnO grain growth. In general, the addition of Sb₂O₃ is believed to inhibit the ZnO grain growth via the formation of spinels and IBs, but we have shown that even the conditions of exaggerated grain growth can be created in this system. We designed an experiment for diffusional doping of ZnO under slightly increased partial pressure of Sb₂O₃. In the high-concentration regime we observed no spinels, and yet the ZnO grains were small and inhibited in growth, while in the low-concentration regime we found huge grains, several times larger than normal ZnO grains, showing an obvious exaggerated growth. By controlling the number of nuclei with IBs we can design coarse-grained microstructures even with Sb₂O₃ doping, which has far-reaching implications in the production of low-voltage varistor devices.     

Grain Growth of Zinc Oxide During the Sintering of Zinc Oxide—Antimony Oxide Ceramics

Grain growth in a high-purity ZnO with systematic additions of Sb₂O₃ from 0.29 to 2.38 wt% was studied for sintering in air from 1106° to 1400°C. The results are discussed and compared with previous studies of pure ZnO and ZnO with Bi₂O₃ additions in terms of the kinetic grain growth expression: Gⁿ – Gⁿ ₀= K ₀ t exp(— Q/RT ). Additions of Sb₂O₃ inhibited the grain growth of ZnO and increased the grain growth exponent ( n -value) to 6 from 3 for pure ZnO and 5 for the ZnO—Bi₂O₃ ceramic. The apparent activation energy for the grain growth of ZnO also increased to about 600 kJ/mol from 220 kJ/mol for pure ZnO and 150 kJ/mol for the ZnO—Bi₂O₃ ceramics. Both the grain growth exponent and the activation energy were independent of the Sb₂O₃ content. Particles of the Zn₇Sb₂O₁₂ spinel were observed on the grain boundaries and at the grain triple point junctions. It was also observed that the Sb₂O₃ additions caused twin formation in each ZnO grain. It is concluded that both the Zn₇Sb₂O₁₂ particles and the twins are responsible for the ZnO grain growth inhibition by Sb₂O₃.     

Sintering of Zinc Oxide Doped with Antimony Oxide and Bismuth Oxide

The phase change, densification, and microstructure development of ZnO doped with both Bi₂O₃ and Sb₂O₃ are studied to better understand the sintering behavior of ZnO varistors. The densification behavior is related to the formation of pyrochlore and liquid phases; the densification is retarded by the former and promoted by the latter. The pyrochlore phase, whose composition is Bi_3/2ZnSb_3/2O₇, appears below 700°C. The formation temperature of the liquid phase depends on the Sb/Bi ratio: about 750°C for Sb/Bi < 1 by the eutectic melting in the system ZnO—Bi₂O₃, and about 1000°C for Sb/Bi > 1 by the reaction of the pyrochlore phase with ZnO. Hence, the densification rate is determined virtually by the Sb/Bi ratio and not by the total amount of additives. The microstructure depends on the sintering temperature. Sintering at 1000°C forms intragrain pyrochlore particles in ZnO grains as well as intergranular layers, but the intragrain particles disappear at 1200°C by the increased amount of liquid phase, which enhances the mobility of the solid second phase.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Joining SiAlON Ceramics Using Composite β-SiAlON–Glass Adhesives

Commercial β-SiAlON ceramics were joined using mixed Si₃N₄, Y₂O₃, Al₂O₃, and SiO₂ powders. At a joining temperature of 1600°C and a hold time in excess of 10 min, the adhesive was converted to an approximate 60:40 vol% composite of β-SiAlON–glass-ceramic. The grain size of the acicular β-SiAlON grains precipitated in the joint (submicrometer diameter, average aspect ratio of 10) was significantly smaller than those in the adherend ceramic (1–5 μm diameter). Intergrowth of β-SiAlON grains at the joint interface resulted in high bond strengths. The chemistry and microstructure of the ceramic adhesives used are described.     

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium-Doped Zinc Oxide Varistors

The effects of the oxide additives MnO₂, Co₃O₄, and Sb₂O₃, commonly incorporated in commercial Bi₂O₃-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V₂O₅-doped ZnO varistors have been studied. MnO₂ is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V₂O₅ content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO₂. Further increases in the V₂O₅ content of 1 mol% MnO₂-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb₂O₃ is incorporated.     

Structural and Dielectric Properties of Ag(Nb0.8Ta0.2)1−xSbxO3 (x≤0.08) Ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of Sb substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The perovskite Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics showed no obvious change with x value being no more than 0.08, and the pseudoperovskite unit cell parameters a = c , b and monoclinic angle β decrease with Sb concentration increasing. The dielectric properties of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics were found to be affected greatly by the substitution of Sb for Nb/Ta. The ɛ value of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics sintered at their densified temperature increased from 480 to 825 with x from 0 to 0.08, the tan δ value decreased sharply from 0.0065 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept a stable lower tan δ value ∼0.0024 with x to 0.08. The temperature coefficient of capacitance values continuously decreased from a positive value of 1450 ppm/°C for x =0 to a negative value of −38.52 ppm/°C for x =0.08.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Influence of Microstructure on the Electrical Properties of Iron-Substituted Calcium Titanate Ceramics

CaTi_0.8Fe_0.2O_3–δ ceramics with grain sizes that varied from 2 to 10 μm were obtained and studied using SEM, TEM, Mössbauer spectroscopy, impedance spectroscopy, and electrochemical oxygen permeability measurements. Smaller grains developed a core–shell microstructure that consisted of a pure CaTiO₃ core and an iron-rich microdomain structure at the shell. The effect of grain size on electronic conductivity was negligible. The ionic conductivity was higher for the ceramics with core–shell grains, which suggested that fast oxygen transport along microdomain walls may have occurred. For the homogeneous ceramics, the ionic conductivity decreased with decreased grain size, in which case the grain boundary represented an additional resistance, probably because of the depletion of oxygen vacancies.     

Effect of Seeding Sr2KNb5O15 on the Phase Formation and Microstructural Development in Reactive Sintering of Sr2NaNb5O15 Ceramics

The phase formation, densification behavior, and microstructure development of Sr₂NaNb₅O₁₅ (SNN) ceramics in both 10 wt% acicular Sr₂KNb₅O₁₅ (SKN) seed-containing and unseeded systems were investigated in this work. SNN ceramics were reactively sintered from SrNb₂O₆ and NaNbO₃ powders. The results show that the acicular SKN seeds not only accelerate SNN phase formation but also promote the densification at lower temperature. In reactive sintering, the acicular SKN seeds prepared by the molten salt synthesis method can give rise to the formation of a liquid phase and provide the structural framework for the grain growth of ceramics, leading to the formation of large anisotropic grains (>80 μm) in ceramics sintered at 1340°C. However, there are no such large anisotropic grains obtained in the SKN-free system. Observation of the large anisotropic grain growth is explained by the liquid-phase-assisted growth mechanism. For comparison, the microstructure evolution in the system with 10 wt% SKN seed, which was prepared by the conventional mixed-oxide method and without acicular morphology, was also investigated to further support the new growth mechanism.     

Transmission Electron Microscope Study of Antimony-Doped Zinc Oxide Ceramics

A transmission electron microscope investigation of a ZnO powder and low-temperature air-sintered pellets with small additions of Sb₂O₃ was conducted in order to study the thin Sb-rich film on the surfaces of ZnO particles. This film was found to be noncrystalline at temperatures below 700°C, and partially crystalline or completely crystalline above this temperature. An oriented overgrowth of the spinel Zn₇Sb₂O₁₂ was observed on the prismatic planes as well as on the basal planes of ZnO crystallites. It is shown that these coherently overgrown spinel films are responsible for the inhibition of grain growth at high temperatures.     

Relationship between Microstructure and Fracture Toughness of Toughened Silicon Carbide Ceramics

Different microstructures in SiC ceramics containing Al₂O₃, Y₂O₃, and CaO as sintering additives were prepared by hot-pressing and subsequent annealing. The microstructures obtained were analyzed by image analysis. Crack deflection was frequently observed as the toughening mechanism in samples having elongated α-SiC grains with aspect ratio >4, length >2 μm, and grain thickness ( t ) <3 μm (defined as key grains 1). Crack bridging was the dominant toughening mechanism observed in samples having grains with thickness of 1 μm < t < 3 μm and length >2 μm (key grains 2). The values of fracture toughness varied from 5.4 to 8.7 MPa·m^1/2 with respect to microstructural characteristics, characterized by mean grain thickness, mean aspect ratio, and total volume fraction of key grains. The difference in fracture toughness was mainly attributed to the amount of key grains participating in the toughening processes.     

High Electrical Conductivity and High Fracture Strength of Sc2O3-Doped Zirconia Ceramics with Submicrometer Grains

The microstructure, crystal phase, electrical conductivity, and mechanical strength of less than 7-mol%-Sc₂O₃-doped zirconia ceramics fabricated by comparatively low-temperature sintering at 1200–1300°C for 1 h were investigated. Zirconia ceramics having a uniform microstructure (grain size < 0.5 μm) stabilized with 6 mol% Sc₂O₃ showed high electrical conductivity (0.15 S/cm at 1000°C) and high fracture strength (660 MPa). With the increase of Sc₂O₃ content from 3.5 to 7 mol%, the grain size, fracture strength, and electrical conductivity at 1000°C changed from 0.2 to 0.5 μm, 970 to 440 MPa, and 0.07 to >0.2 S/cm, respectively. Sc₂O₃-doped zirconia polycrystals with high fracture strength and high electrical conductivity are promising candidates for the electrolyte material of solid oxide fuel cells.     

High-Toughness Ce-TZP/Al2O3 Ceramics with Improved Hardness and Strength

Simulataneous additions of SrO and Al₂O₃ to ZrO₂ (12 mol% CeO₂) lead to the in situ formation of strontium aluminate (SrO · 6Al₂O₃) platelets (∼0.5 μm in width and 5 to 10 μm in length) within the Ce-TZP matrix. These platelet-containing Ce-TZP ceramics have the strength (500 to 700 MPa) and hardness (13 to 14 GPa) of Ce-TZP/Al₂O₃ while maintaining the high toughness (14 to 15 MPa ± m^1/2) of Ce-TZP. Optimum room-temperature properties are obtained at SrO/Al₂O₃ molar ratios between 0.025 and 0.1 for ZrO₂ (12 mol% CeO₂) with starting Al₂O₃ contents ranging between 15 and 60 vol%. The role of various toughening mechanisms is discussed for these composite ceramics.     

Effects of Bismuth Sesquioxide on the Characteristics of ZnO Varistors

The nonlinearity of ZnO varistors is significantly influenced by the Bi₂O₃ and Sb₂O₃ contents, as well as by the phase composition of the Bi₂O₃. Degradation of the current-voltage characteristics due to the applied voltage is not always lowered by the β—γ transition of the Bi₂O₃ phase. Lattice parameter determinations and stress analyses suggest that the Bi₂O₃-rich phase in multigrain junctions causes mechanical strain at the grain boundary which may play an important role in the current-voltage characteristics of ZnO varistors.     

Effects of Antimony Oxide on the Characteristics of ZnO Varistors

The breakdown voltage, the upturn voltage, and the nonlinearity of the ZnO varistors are significantly influenced by the Sb₂O₃ and SiO₂ contents, as well as by the β→γ transition of the Bi₂O₃ phase. The lattice parameter of spinel is influenced by the coexisting Bi₂O₃ phase. Antimony oxide disperses into the powders of ZnO and other additives in the early stage of sintering, and finally gathers again as particles of spinel which may play an important role in the improvement of the nonlinearity by stressing the interfaces of two ZnO grains.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Textured PMN–PT and PMN–PZT

A promising way to improve the performance of piezoelectric ceramics is grain orientation by templated grain growth. In this work lead-based piezoelectric ceramics Pb(Mg_1/3Nb_2/3)_0.68Ti_0.32O₃ (PMN–32PT) and Pb(Mg_1/3Nb_2/3)_0.42(Ti_0.638Zr_0.362)_0.58O₃ (PMN–37PT–21PZ) ceramics were textured via templated grain growth process. For texturization (001)-oriented BaTiO₃ (BT) platelets (approximately 10 μm × 10 μm × 2 μm) were utilized as templates. The texturized ceramics were accomplished by aligning the templates by tape casting. The template growth into the matrix resulted in textured ceramics with Lotgering factors between 0.94 and 0.99 for both compositions. Consequences of the texture are enhanced dielectric and piezoelectric properties. Unipolar strain-field measurements of textured ceramics showed 0.25% strain s ₃₃ at 3 kV/mm. Large signal d ₃₃^* of up to 878 pm/V were determined directly from strain measurements. Compared with randomly oriented ceramics in texturized samples unipolar strain s ₃₃ and large signal d ₃₃^* was enhanced by a factor of up to 1.8.     

Effects of Addition of Na2O, Sb2O3, CaO, and ZrO2 on the Properties of Lithium Zinc Ferrite

Some effects of CaO, Na₂O, Sb₂O₃, and ZrO₂ additions on Li_0.3Zn_0.4Fe_2.3O₄ ferrite were studied to improve its density and other material properties. The densification behavior of the ferrite depended on the amount and type of additive. A relative density of ∼98.5% was achieved with the addition of CaO. The grain size decreased with the addition of Na₂O, CaO, and Sb₂O₃. The permeability and electrical resistivity increased with additives. CaO remarkably increased resistvity, whereas, ZrO₂ increased permeability. Na₂O and Sb₂O₃ increased the Curie temperature, whereas CaO and ZrO₂ decreased it. These effects were attributed to mainly additive segregation on the grain boundaries, which suppressed grain-size development during the sintering of lithium zinc ferrite.     

Microstructural Development in SnO2-Doped ZnO–Bi2O3 Ceramics

The effects of adding small quantities of SnO₂ to the basic ZnO–Bi₂O₃ varistor composition were studied in terms of phase reactions, microstructural development, and the formation of inversion boundaries. Scanning and transmission electron microscopy studies showed that the inversion boundaries, triggered by the addition of SnO₂, cause anisotropic grain growth in the early stages of sintering. ZnO grains that include inversion boundaries grow exaggeratedly, at the expense of normal grains, until they dominate the microstructure. Higher additions of SnO₂ lead to an increase in number of grains with inversion boundaries and to a more fine-grained microstructure. The increasing amount of secondary phases is also related to a higher level of SnO₂ addition; however, the influence of these phases on ZnO grain growth is subordinate to the role of inversion boundaries.