具有90nm调谐范围的1.3μm Si基MOEMS可调谐光滤波器

利用表面微机械技术,成功制作了1.3μm Si基MOEMS可调谐光滤波器.原型器件在50V的调谐电压下,调谐范围为90nm.该技术可以用于制作1.3μm Si基可调谐光探测器.     

具有90nm调谐范围的1.3μm Si基MOEMS可调谐光滤波器

利用表面微机械技术,成功制作了1.3μm Si基MOEMS可调谐光滤波器.原型器件在5 0 V的调谐电压下,调谐范围为90 nm.该技术可以用于制作1.3μm Si基可调谐光探测器.     

GaAs基MOEMS波长可调谐滤波器的设计和理论模拟

采用传输矩阵理论和结合悬臂梁的电学一机械模型对GaAs基1.55 μm微光电机械系统(MOEMS)波长可调谐滤波器的光学和电学特性进行了深入的对比分析和研究.结果表明,采用800 nm厚的空气腔可以实现滤波器波长的调谐范围为100 nm,所需最大反向偏压为4 V,波长的调谐速率可以达到1.83 MHZ.     

液晶可调谐光滤波器的实验研究

对液晶可调谐光滤波器进行了实验研究,初步研制出带宽0.3～0.5 nm,精细度为100～200,连续可调谐范围大于70 nm的液昌F-P腔光滤波器.     

SOI基微环谐振可调谐滤波器

采用电子束光刻和ICP刻蚀等工艺制作出基于SOI纳米线波导微环谐振滤波器。滤波器微环半径为5μm左右,波导截面尺寸为(350nm～500nm)220nm不等。测试结果表明,波导宽度为450nm时器件性能最为理想,其自由频谱宽度为16.8nm,1.55μm波长附近的消光比为22.1dB。通过对微环滤波器进行热光调制,在21.4℃～60℃温度范围内实现了4.8nm波长范围的可调谐滤波特性,热光调谐效率达到0.12nm /℃。同时,研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰。     

超窄带宽可调光滤波器的研究

为了降低可调光滤波器的带宽,采用双光栅结构和基于微机电系统的反射镜相结合的方法,构建了具有波长连续可调谐的超窄带宽滤波器,并进行了理论分析和实验验证,取得了滤波带宽小于0.4nm的数据。结果表明,双光栅结构的光滤波器具有性能稳定、重复性优良的性能特点,并且很好地满足了带宽需求。这种结构显著降低了可调谐光滤波器的滤波带宽,提高了系统的稳定性。     

微机械可调谐滤波器的研制

利用GaAs/AlGaAs分布反馈Bragg反射镜在GaAs衬底上制作了一个微机械的调谐滤波器.该器件在7V调谐电压下调谐范围达28nm.     

基于F-P腔的MEMS TOF的波长控制技术

文章分析了基于法布里-珀罗(F-P)腔技术的微机电系统(MEMS)可调谐光滤波器(TOF)的调谐原理,推导并测试了其波长与温度及波长与电压的关系,提出了温度与电压相结合的波长混合控制技术,实现了1 530～1 560 nm范围内的波长可调的光滤波器.     

高品质因子聚合物可重构微环谐振腔滤波器

以聚合物ZPU-44和聚砜(PSU,polysulfone risi n)分别作为波导包层和芯层材料,采用倒脊形波导结构,设计并 优化了聚合物可重构微环谐振腔滤波器的波导截面参数、弯曲半径、耦合区波导长度和间距 以及调谐电极 等结构参数,分析了其谐振滤波特性。采用传统的微加工工艺制备了聚合物可重构微环谐振 腔滤波器并进 行了测试。结果表明,其在通信波段1550nm附 近的自由光谱范围(FSR)为0.15nm,3dB带宽约为0.0235nm, 品质因子Q达6.60×10⁴,在0~ 4V电压范围内实现了0.5~12.95dB消光比的调谐,且 谐振波长调谐一 个FSR的电压为4.75V,与理论设计基本 相 符。本文的聚合物可重构微环谐振腔滤波器可用于集成波导可调谐光延时线和可调谐滤波。     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.