海尔集成电路推出HR6P系列微控制器芯片

近日，Holtek推出8位MCU新产品HT48R08A-1与HT48R09A-1，分别具有13与19个输入／输出管脚，与同系列的产品HT48R05A-1、HT48R06A-1与HT48R07A-1的管脚兼容，增加了程序与数据存储器的空间。     

计算机与外设

无线USB Skype Phone控制芯片组HOLTEK导体推出无线USB Skype Phone的方案HT82A850R Wire- less baseband OTP MCU with CODEC与HT82A85 1 R Wireless baseband OTP MCU with USB I/F。HT82A850R与HT82A85 1R除差异为HT82A85 1R应用于USB端,兼容于USB的Audio Device Class,HT82A850R应用于Handset端,     

LCD大屏幕6路输出定时钟

HT49K30A-1／HT49C30-1／HT49C30L是8位高性能精简指令集单片机，专门为需要LCD显示功能的产品而设计。掩膜版本HT49C30-1和HT49C30L与OTP版本HT49R30A-1引脚和功能完全相同。HT49C30L为低电压版本，工作电压最低为1．2V，可适用于一节电池的应用系统。     

基于HT47R20的测温仪表软件设计方法

本文介绍了基于HT47R20单片机的测温仪表软件的设计方法，着重讨论了线性化分段，表格形成，和快速查表等问题。     

使用HT48R30单片机的四款温控电路

HT48R30　简介HT48R30A-1/HT48C30-1　是一款八位高性能精简指令集单片机,专为多输入输出控制的产品设计。它拥有低功耗、I/O　口稳定性高、定时器功能、振荡选择、省电和唤醒功能、看门狗定时器、蜂鸣器驱动、以及低价位等特点,使此款多功能芯片可以广泛地适用于工业控制、消费类产品、子系统控制器等各种应用。特　　性HT48R30A-1/HT48C30-1 的特性如下:工作电压在fsys　=　4MHz时为2.2～5.5V,fsys　=　8MHz时为3.3～5.5V;低电压复位功能;最多可有　25个双向输入/输出口(DIP28封装)　;1个与输入/输出共用引脚的外部中断输入…     

单片机模糊控制在电饭煲中的应用

介绍用新型HT46R47型单片机和模糊控制技术实现的电饭煲。他具有电路简单、成本低廉、节省能源、安全可靠等特点。     

步进马达速度控制

一、简介 这篇文章主要是介绍如何利用盛群半导体型号为HT46R47的微控制器来控制步进马达的转速,主要方式是透过HT46R47这颗微控制器中模拟信号转换数字信号的功能,将模拟的控制信号转为适当的数字信号后,再透过步进马达的驱动电路就可以控制其转速和方向。     

盛群推出WirelessUSB Skype Phone控制芯片组

盛群半导体推出Wireless USB Skype Phone解决方案——HT82A850R与HT82A851R，并与Nordic Semiconductor合作，共同推广2．4GHz ISMBend无线应用。[第一段]     

盛群半导体推出系列8位MCU

盛群半导体新推出8位精简型MCUHT46R48及HT46R48E,内建9位ADC,工作频率最高可达8MHz,具有2KB的程序内存及外围电路,具有PWM功能及19个I/O引脚,用于控制马达转速及各种开关,具有PFD功能,可产生音频信号等。适用于家电、汽车电子及其它智能控制产品。同时推出的还有8位MCUHT48R07A-1,工作频率最高可达8MHz。产品提供19个I/O引脚,可用于控制各种开关或驱动LED等显示装置。HT48R07A-1提供PFD功能,以及定时器及中断功能。其它功能包括:1KB程序内存、64BRAM、低电压复位等。同时提供软硬件功能齐全的开发工具,包括仿真器、烧…     

HT989上下限温控表头

本文介绍的上下限温控表头温度测量范围为-19.9～99.9℃,分辨力为±1个字(0.1℃),准确度为±(RDG　0.5% 2)个字;上、下限温度控制范围与测量范围相同;使用一体化红色共阴极LED数码管显示;单片机型号是HT48R30A-1、OTP 型,ROM 空间2K;传感器型号是MF58,50kΩ/25℃,精度±1%,B=39     

Solubility‐Induced Ordered Polythiophene Precursors for High‐Performance Organic Thin‐Film Transistors

With the aim of enhancing the field‐effect mobility of self‐assembled regioregular poly(3‐hexylthiophene), P3HT, by promoting two‐dimensional molecular ordering, the organization of the P3HT in precursor solutions is transformed from random‐coil conformation to ordered aggregates by adding small amounts of the non‐solvent acetonitrile to the solutions prior to film formation. The ordering of the precursor in the solutions significantly increases the crystallinity of the P3HT thin films. It is found that with the appropriate acetonitrile concentration in the precursor solution, the resulting P3HT nanocrystals adopt a highly ordered molecular structure with a field‐effect mobility dramatically improved by a factor of approximately 20 depending on the P3HT concentration. This improvement is due to the change in the P3HT organization in the precursor solution from random‐coil conformation to an ordered aggregate structure as a result of the addition of acetonitrile. In the good solvent chloroform, the P3HT molecules are molecularly dissolved and adopt a random‐coil conformation, whereas upon the addition of acetonitrile, which is a non‐solvent for aromatic backbones and alkyl side chains, 1D or 2D aggregation of the P3HT molecules occurs depending on the P3HT concentration. This state minimizes the unfavorable interactions between the poorly soluble P3HT and the acetonitrile solvent, and maximizes the favorable π–π stacking interactions in the precursor solution, which improves the molecular ordering of the resulting P3HT thin film and enhances the field‐effect mobility without post‐treatment.     

Naphtho[1,2‐c:5,6‐c′]bis[1,2,5]thiadiazole‐Containing π‐Conjugated Compound: Nonfullerene Electron Acceptor for Organic Photovoltaics

The development of nonfullerene acceptor materials applicable to organic photovoltaics (OPVs) has attracted considerable attention for the achievement of a high power conversion efficiency (PCE) in recent years. However, it is still challenging due to the insufficiency of both the variety of effective electron‐deficient units and certain guidelines for the design of such materials. This work focusses on naphtho[1,2‐c:5,6‐c′]bis[1,2,5]thiadiazole (NTz) as a key electron‐deficient unit. Therefore, a new electron‐accepting π‐conjugated compound (NTz‐Np), whose structure is based on the combination of NTz and the fluorene‐containing imide‐annelated terminal units (Np), is designed and synthesized. The NTz‐Np compound exhibits a narrow optical energy gap (1.73 eV), a proper energy level (?3.60 eV) of the lowest unoccupied molecular orbital, and moderate electron mobility (1.6 × 10^?5 cm² V^?1 s^?1), indicating that NTz‐Np has appropriate characteristics as an acceptor against poly(3‐hexylthiophene) (P3HT), a representative donor. OPV devices based on NTz‐Np under the blend with P3HT show high photovoltaic performance with a PCE of 2.81%, which is the highest class among the P3HT/nonfullerene‐based OPVs with the conventional device structure. This result indicates that NTz unit can be categorized as a potential electron‐deficient unit for the nonfullerene acceptors.     

All-polymer phototransistors with bulk heterojunction sensing layers of thiophene-based electron-donating and thienopyrroledione-based electron-accepting polymers

All-polymer phototransistors consisting of bulk heterojunction (BHJ) nanolayers of electron-donating (p-type) and electron-accepting (n-type) polymers are attractive candidates for applications such as light-sensing and light-switching devices. Here, we report efficient green-light-sensing all-polymer phototransistors based on BHJ layers of poly(3-hexylthiophene) (P3HT) and poly[(4,8-bis(2-ethylhexyloxy)-benzo[1,2-b:4,5-b]-dithiophene)-2,6-diyl-alt-(N-2-ethylhexylthieno[3,4-c]pyrrole-4,6-dione)-2,6-diyl]] (PBDTTPD) polymers. To understand the phototransistor characteristics, all devices were exposed to a green monochromatic light (555 nm) with different incident power intensities. The results showed that the P3HT:PBDTTPD (80:20) layer are more advantageous than the pristine P3HT layers in terms of efficient charge separation and transport. The responsivity value of devices with the P3HT:PBDTTPD (80:20) layers reached 33.3 A/W, which is 25 and 28 times higher than those obtained with pristine the pristine P3HT or P3HT:PBDTTPD (60:40) layers. The enhanced device performance of the P3HT:PBDTTPD (80:20) phototransistors is attributable to an efficient charge separation, prevalent edge-on chain orientation, and relatively smoother surface morphology, which might facilitate improved charge transport in the lateral direction.     

基于PLC的自动扶梯多功能变频节能控制系统设计

以OMRON CPMIA-20CDR-A-V1型PLO及汇川公司的MD320变频器为例介绍自动扶梯多功能变频节能控制系统的设计。结合自动扶梯的基本原理,进行了配件选择及硬件电路设计,并设计了系统控制程序。     

基于SOP生产工艺的系统级封装

提出了一种基于SOP24基板及生产工艺,利用空余的管脚焊盘放置被动元件实现内部互连,制作SiP封装集成电路的封装工艺。选择红外发射电路,使用HT6221红外编码器芯片、电阻、三极管等无源元件,制造出集成了驱动电路的红外发射芯片。建立开发平台对内部器件的布置进行优化,最终制作出工艺简单、性能可靠的SiP封装器件。用一个标准的SOP24封装组件实现了完整的系统功能,面积比系统级封装前减少50％,可靠性大幅度提高,用户使用该芯片开发产品的难度大大降低。     

Correlation between ultrafast transient photomodulation spectroscopy and organic photovoltaic solar cell efficiency based on RR-P3HT/PCBM blends

Ultrafast transient spectroscopy was applied to various films of regio-regular polythiophene (RR-P3HT, donor-D) and C₆₀ derivative (PCBM, acceptor-A) blends, in conjunction with organic photovoltaic (OPV) solar cell fabrication and evaluation based on the same blends, for investigating the existence of a correlation between the device efficiency and the transient photophysics characteristics. For our transient spectroscopy measurements we used the ps pump–probe transient photomodulation (PM) technique having a unique probe spectral range in the mid-IR (0.25–1.05 eV). We found that the transient PM spectra contain photoinduced absorption bands of excitons in the donor polymer, charge transfer excitons (CTE) at the D–A interfaces, and free polarons. We compared the relative density of photogenerated CTE in D–A blends having various D–A weight ratio with the photocurrent density of fabricated solar cells based on the same blends. We found that the dissociation of CTE into free charges correlates well with the optoelectronic measurements of the corresponding solar cell. The more efficient CTE dissociation occurs in films having the optimum D–A weight ratio (which is 1.2:1 for the P3HT/PCBM system) that shows the highest OPV power conversion efficiency; this is due to the lowest CTE binding energy for this blend that results from the most suitable D- and A- grain sizes. We also show that the exciton lifetime is the shortest for the optimum blend, and this helps boosting the device efficiency by reducing energy loss.     

A fully integrated 10-Gb/s tapped delay Hilbert transformer for optical single sideband

A 10-Gb/s SiGe HBT tapped delay Hilbert transformer (HT) integrated circuit (IC) is described. The four tap filter uses an integrated LC transmission line with a total delay of 180ps, and the HT has a nominal group delay of 120ps. The circuit is fabricated in a 47-GHz f/sub T/ SiGe HBT process and consumes 112mW from a -3.3-V supply. Measured s-parameters and time domain waveforms are shown to agree with theory. Measurements of a 10-Gb/s optical single sideband system indicate that 7dB of broadband sideband suppression is obtainable using the IC.     

Filter-Free Narrowband Photomultiplication-Type Planar Heterojunction Organic Photodetectors

Filter-free narrowband photomultiplication-type planar heterojunction (PHJ) organic photodetectors (PM-PHOPDs) are first realized by employing a thick front donor layer and an ultrathin PC₇₁BM layer. The thick front donor layer is employed as an optical field adjusting (OFA) layer. The sequentially coated PC₇₁BM will diffuse slightly into OFA layer, which works as interfacial electron traps to capture photogenerated electrons for assisting hole tunneling injection. The P3HT/PC₇₁BM-based PM-PHOPDs exhibit narrowband response with full-width of half-maximum of 32 nm and external quantum efficiency (EQE) of 1700% at 650 nm under −20 V bias. Due to the enhanced hole transport and reduced charge recombination in PHJ compared to those in bulk heterojunction (BHJ), the EQE of P3HT/PC₇₁BM-based narrowband PM-PHOPDs is twice as P3HT:PC₇₁BM BHJ-based narrowband PM-OPDs under the same bias. The response peak of PM-PHOPDs is adjusted from 650 to 695 or 745 nm by incorporating SMPV1 or DRCN5T in OFA layers due to the red-shifted absorption edge. The EQEs of 3600% at 695 nm and 870% at 745 nm are obtained for P3HT:SMPV1 and P3HT:DRCN5T-based PM-PHOPDs under −20 V bias, respectively. This work provides a smart strategy to achieve narrowband PM-OPDs by designing different OFA layers.