基于时频脊线的跳频参数盲估计

 为了估计未知跳频信号的参数,提出一种基于时频脊线的跳频参数盲估计方法,根据跳频信号频率的瞬变特性,通过对跳频信号时频脊线的小波变换,可以准确估计跳周期,进而估计其它跳频参数.理论分析和仿真结果表明,该方法可以在低信噪比下以较低的运算复杂度实现高精度的参数估计,整体性能优于现有的跳频参数盲估计方法.     

基于S变换的跳频信号特征参数盲估计

提出了一种基于S变换的未知跳频信号参数盲估计方法。该方法利用S变换良好的时频聚集性,在未知任何先验参数的情况下,能够准确估计出跳频信号的跳频频率、跳变时刻和跳频信号驻留时间等参数。文中阐述了S变换的基本原理,应用S变换对跳频信号进行了分析并与其他时频分析方法作了比较,最后给出了估计跳频信号参数的具体算法步骤,通过计算机仿真得到了较为准确的估计结果,验证了该算法的有效性。     

基于时频分析的跳频信号的参数盲估计方法

采用平滑伪Wigner—Ville分布（SPWVD）来估计跳频信号载波频率,提取频率脊线,对频率脊线进行一次小波变换来估计未知跳频信号的参数,该方法可以在不需要知道跳频信号任何先验参数的情况下,估计出信号的码元速率,载波频率改变时刻。对频率编码信号的WVD,PWVD和SPWVD结果作了比较,指出了SPWVD的优点,给出了基于时频分析跳频信号参数估计的具体算法步骤．计算机仿真表明该方法是行之有效的。     

基于重排时间尺度分布的跳频信号参数盲估计

提出了一种低截获概率跳频信号的截获方法,该方法基于信号小波尺度谱的重排时间尺度分布,在未知任何先验条件情况下,能够检测并提取非合作跳频信号的跳频频率、跳频周期和跳变时刻特征参数信息。文中比较了跳频信号的小波尺度谱与重排小波尺度谱分析效果,提出了基于重排小波尺度谱的跳频信号参数盲估计算法,通过计算机仿真得到了较为准确的估计结果,并对算法的性能进行了分析,验证了该方法的有效性。     

采用局部特征尺度分解的跳频信号参数盲估计算法

针对现有跳频信号参数盲估计算法存在时间分辨率和频率分辨率矛盾这一问题,提出了一种基于局部特征尺度分解的跳频信号参数估计新算法。该算法将跳频信号迭代地分解成若干个内禀尺度分量并进行降噪处理,然后对其最大瞬时幅度进行小波变换和傅里叶变换即可估计出跳频信号的跳变时刻和跳频周期,最后根据得到的跳变时刻和跳频周期可以进一步估计出跳频频率集。该算法不受时频不确定性原理的影响,能够在未知先验知识的条件下估计出跳频信号的跳周期、跳变时刻和跳频频率集。最后通过仿真验证了算法的有效性。      

一种非合作的跳频信号跳同步方法

针对跳频信号侦察中,在非合作条件下进行信号跳同步问题,提出利用跳信号分段频谱比较分析实现跳频信号跳变时刻同步的方法。该方法首先利用短时傅里叶变换和小波变换的方法有效估计跳频信号跳速率参数,在此基础上通过在一个跳周期内取三段信号进行频谱比较,并滑动调整时间参数的方法进行跳同步获取。实验证明该方法不仅可以有效实现跳频的跳同步,同时克服了跳速率估计精度不足的问题,且方法结构简单易于工程实现。     

一种基于时频分析的跳频信号参数盲估计方法

本文提出了一种采用平滑伪WVD(SPWVD)时频分析来估计未知跳频信号参数的方法，该方法可以在不需要知道信号任何先验参数的情况下，估计出跳频信号的跳周期(hop duration)，跳变时刻(hop timing)和跳频频率(跳频图案)等参数。文中对跳频信号的WVD、PWVD和SPWVD结果作了比较，指出了SPWVD的优点，给出了基于SPWVD估计跳频信号参数的具体算法步骤，并进行了性能分析。     

基于小波变换的跳频信号跳速盲估计算法研究

针对传统的语图测量方法在跳频信号跳速估计中跳变点定位存在的时间模糊现象,利用小波变换在奇异点检测方面的独优势,提出了一种基于小波变换的跳速盲估计的新方法,并给出了仿真试验,仿真结果表明该方法能够准确地提取跳频信号的跳速,并具有较高的抗信噪比性能。     

一种新的跳频信号参数盲估计算法

本文针对通信对抗中的跳频信号参数盲估计问题,提出了一种基于原子分解算法的跳频信号参数盲估计方法.根据跳频信号内部结构的特点,以加窗正弦函数为基函数构造了一种与跳频信号匹配的3-参数时频原子字典,将跳频信号分解为有限个3-参数时频原子的组合,最终根据这些时频原子的参数值来估计跳频信号的参数.仿真实验表明,该方法能够在未知任何先验知识的情况下,对跳频信号的跳周期、跳变时刻和跳频频率进行有效估计.     

FH/PSK混合调制扩频信号参数估计

针对混合调制信号参数难以估计的问题,本文通过对FH/PSK混合调制扩频信号特征的分析,提出了一种FH/PSK混合调制扩频信号参数估计方法。利用时频脊线分析、跳频分量数估计、快速四阶循环累积量算法与小波变换相结合的方法,实现了跳频频率和码速率等参数的高精度估计。仿真表明,本文方法可在较低信噪比下得到该混合调制扩频信号多个参数的高精度估计,具有较高的工程应用价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.