热处理对网状结构TiB_W/Ti60复合材料组织与性能的影响

使用大尺寸球形Ti60钛合金粉与细小TiB2粉,通过低能球磨与反应热压烧结,成功制备了增强相呈网状分布的TiB晶须增强Ti60合金基(TiB_W/Ti60)复合材料。对TiB_W/Ti60复合材料进行热处理,以改善其组织结构与力学性能。结果表明:随着固溶温度的升高,TiB_W/Ti60复合材料基体中初生α相(密排六方相)含量减少,相应地转变β组织(α′(马氏体)+残留β相(体心立方相))含量增加,TiB_W/Ti60复合材料的抗拉强度升高,塑性降低;经过1 100℃/1h固溶处理之后,TiB_W/Ti60复合材料的室温抗拉强度为1 470 MPa,延伸率为1.9%。经过时效处理后,转变β组织中的α′相分解成细小α+β相。经过1 100℃/1h固溶+600℃/8h时效处理后TiB_W/Ti60复合材料的硬度达到HV538,抗拉强度达到1 552 MPa,延伸率为1.5%,经过1 000℃/1h固溶+600℃/8h时效处理,其抗拉强度达到1 460 MPa,延伸率为2.2%。     

焊后热处理对高氧TC4/TC17钛合金线性摩擦焊接头组织及性能的影响

对高氧TC4/TC17钛合金线性摩擦焊接头进行热处理,研究了不同热处理温度对异质钛合金线性摩擦焊接头显微组织及力学性能的影响.结果表明:异质钛合金线性摩擦焊接头焊缝区在TC17侧形成亚稳定β相,在高氧TC4侧形成针状马氏体相.经过热处理后,板条状α相在晶界处析出,针状α相在晶粒内部析出,并且残余α相在保温过程中发生分解,随着热处理温度的升高,析出相逐渐长大.接头焊缝及热力影响区显微硬度在热处理后显著增加.裂纹尖端张开位移(Crack tip opening displacement,CTOD)试验结果表明:接头断裂韧性薄弱区域在焊缝区及TC17侧热力影响区,热处理温度的升高可以明显提高接头薄弱区域的断裂韧性.     

TiB/Ti复合材在反应烧结中TiB粒子的生成行为

用元素混合法制造TiB/Ti复合材,由于TiB本身不稳定,作为粉末单体不能直接与Ti粉混合,使TiB粒子分散在Ti中,一般是添加稳定的金属硼化物粉,高温烧结时,Ti金属硼化物反应生成TiB,分散于钛基体中,从金属硼化物中分离出的金属原子进入基体,对其性能有影响,因此要选择可提高基体性能的金属原子.对于钛基体来说,适量添加β稳定元素Cr能组织稳定β组织,产生α′马氏体相变,从而控制基体的强度和延性.     

船用TA5钛合金激光焊接接头组织和性能研究

采用IPG光纤激光器对8 mm厚的TA5钛合金进行激光自熔焊接,并对焊接接头的微观组织和力学性能进行分析。结果表明,激光焊接接头表面成形连续、均匀、无飞溅,内部无气孔和裂纹等缺陷。母材组织为细小均匀的等轴α相;焊缝区组织主要由粗大的β柱状晶粒、大量的针状马氏体α'以及少量的板条马氏体组成;热影响区组织主要由等轴α相、少量的针状马氏体α'和少量的残余β组成;在熔合线的边界,柱状晶粒与等轴晶粒联生结晶、外延生长,保证了焊接接头的稳定连接。焊接接头各区域的显微硬度差异较大,最高硬度出现在熔合线附近,焊缝区和热影响区的显微硬度明显高于母材的。对拉伸断裂部位进行观察,拉伸断裂发生在远离焊缝的母材处,这说明激光焊接接头的抗拉强度与母材等强或者略高于母材的,这与大量针状马氏体形成的网篮组织有直接的关系。     

钛合金激光焊及其接头的显微组织与力学性能

采用光纤激光器对3.5 mm厚TC4合金板材进行焊接,并对焊接接头的显微组织与力学性能进行分析测试,确定了试验条件下的最佳激光焊参数。结果表明,焊缝熔合区组织主要为针状α′马氏体及少量β相,热影响区由α相及少量α′马氏体组成;接头区域的显微硬度在熔合区变化平缓,而热影响区的硬度下降明显。在激光功率为4.0 kW、焊接速度为3.0 m/min时,获得接头的力学性能最佳,焊缝强度与母材本身的强度接近。接头拉伸断口表面存在大量韧窝,呈明显的韧性断裂特征。     

12 mm厚TC4钛合金激光-MIG复合焊接头组织与性能研究

目的 探究TC4激光-MIG复合焊接头显微组织与基本力学性能之间的联系,分析接头不同区域的断裂行为。方法 利用激光-MIG复合焊制备TC4钛合金对接接头,采用光学显微镜和扫描电镜观察接头焊缝区、热影响区及母材的显微组织,在室温下进行了显微硬度测试、拉伸性能测试与断裂韧性测试,并对试样断口进行了观察分析。结果 接头的焊缝区组织为粗大的β相柱状晶,晶内纵横分布着αʹ针状马氏体和针状α相,靠近焊缝一侧的热影响区则由针状αʹ相、α集束与少量细小的块状α相构成。随着远离焊缝中心,母材侧热影响区组织转变为块状的α相、少量α集束及初生β相,并最终趋于与母材组织相似。热影响区的显微硬度值达到最大,这是因为该区域存在比焊缝区更为细小的针状αʹ相。接头的平均抗拉强度和断后伸长率分别为1 020.22 MPa和7.38%。接头在拉伸时主要在焊缝区发生断裂。焊缝区展现出比母材区和热影响区更优异的断裂韧性,平均值为87.14 MPa.m^1/2,焊缝区内纵横交错的网篮组织与集束是其断裂韧性较高的主要原因。结论 在TC4钛合金的激光-MIG复合焊过程中,针状α相和αʹ马氏体的存在会提高焊缝的显微硬度和断裂韧性,但相较于母材塑性没有提升,通过调控焊缝区显微组织结构,可以获得所需性能的接头。     

热处理温度对TC17(α+β)/TC17(β)钛合金线性摩擦焊接头组织及力学性能的影响

对TC17(α+β)/TC17(β)钛合金线性摩擦焊接头进行热处理实验,采用光学显微镜(OM),扫描电子显微镜(SEM)和显微硬度仪等检测手段,研究不同热处理温度对焊接接头微观组织及力学性能的影响。结果表明:焊态下,接头焊缝区发生再结晶,界面处为亚稳定β相组织,显微硬度低于母材,接头高周疲劳强度为345 MPa。TC17(α+β)侧热力影响区因焊接速率过快,残留了大量的初生α相。经过焊后热处理,亚稳定β相分解,焊缝析出弥散的(α+β)相。随着热处理温度的升高,细小的次生α相长大,部分发生球化。热处理后,因亚稳定β相分解,焊缝及热力影响区的显微硬度大幅度升高,接头疲劳强度平均提高65 MPa;随着热处理温度的升高,接头热力影响区的断裂韧度增加。     

30 mm TA2双激光同步对称焊接接头组织及力学性能研究

为提高钛合金焊接效率和焊接精度,采用TA2钛合金双激光同步对称焊接技术,对30 mm厚板TA2钛合金试板开展双激光同步对称焊接工艺,并对焊后试板进行接头成形质量、焊接变形、接头金相组织形貌、力学性能和工艺性能研究。结果表明:30 mm厚板TA2试板焊接接头表面成形良好,呈银白色,焊接变形较小;焊缝低倍金相组织呈块状分布,内部无明显缺陷,无贯穿整个焊缝的树枝状柱状晶,焊缝和热影响区微观金相组织均为锯齿状α相,母材为细小的等轴α相,接头心部焊缝晶粒比近表面焊缝粗大;焊接接头整体平均抗拉强度略低于近表面和心部接头抗拉强度,而近表面和心部焊缝屈服强度高于母材的,塑性低于母材的;焊接接头在近表面和心部区域冲击性能差距较大;弯曲试样均合格,焊接接头工艺性能良好。这表明厚板钛合金双激光同步对称焊接技术在高效高精度焊接方面具有良好的工程化应用前景。     

QAl9-4/B30焊缝TEM特征

本文利用透射电子显微镜研究了QAl9-4+B30铜合金焊缝内的组织。结果表明,QAl9-4+B30铜合金的焊缝内存在β'马氏体板条,内部具有细微的层状结构。经过热处理后β'马氏体转变为γ2相。基体中出现与基体共格的细小面心立方相。QAl9-4+B30铜合金的焊缝内存在NiAl相,NiAl相的(110)面大多平行于面心立方基体的(111)面,NiAl析出相的长轴方向平行于[121]NiAl,垂直于[101]NiAl。     

合金化填充材料Ni 对SiCP/6061Al 复合材料激光焊接焊缝显微组织的影响

以N i 片作为合金化填充材料对SiC_P/6061A l 金属基复合材料(SiC_P/6061A lMMC) 进行激光焊接, 研究了激光输出功率、焊接速度等焊接工艺参数对焊缝显微组织的影响。结果表明, 采用金属N i 片作为合金化填充材料对SiC_P/6061A lMMC 进行激光焊接, 可以在一定程度上抑制SiC 颗粒的溶解及针状脆性相Al₄C₃ 的形成, 并获得以Al₃Ni 等相为增强相的焊缝显微组织, 但在焊缝心部有粗大的气孔形成。      

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.     

t-Model mechanism of high-Tc cuprates

A doublon formalism ofd-p model Hubbard Hamiltonian is studied only with transfer integrals, and without the superexchange term. This gives excellent doping-dependent features ofT _c in high-T _c cuprates.     

Magnetron sputtering of TiOxNy films

This article reports on the characterization and preparation of N-doped titanium dioxide (TiO₂) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O₂/N₂ atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiO_xN_y films. The amount of N in the TiO_xN_y film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle α_ir after the film activation by UV irradiation was investigated as a function of at% of N in the TiO_xN_y film. The yellow-coloured TiO_xN_y films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap E_g down to 2.7 eV. A significant decrease of the water contact angle α_ir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO₂ films containing less than 6 at% of N.     

Properties of CdxPb1−xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.     

Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.