双温区生长CdSe单晶及其红外表征

硒化镉晶体是一种很有前途的室温核辐射探测器半导体材料,实验采用改进的双温区气相垂直提拉法成功的生长了Φ15mm×40mm,电阻率为107～108(Ω·cm)量级的硒化镉单晶体.对生长的硒化镉单晶体(110)解理晶片进行XRD、红外透过测试,结果显示:硒化镉单晶体完整性好,红外透过率＞62%,表明用二步提纯,在具有较好温度梯度的双温区炉中生长晶体,能有效地控制杂质、缺陷浓度和晶体的化学配比.     

数控焰熔法生长金红石单晶体的气体参数优化试验研究

使用数控焰熔法晶体生长炉和三管燃烧器进行了金红石单晶体的生长工艺实验研究。研究表明,在3个气体参数中,内氧是基础。当内氧流量小于特征值O_(in)(min)=6.6 L/min或大于特征值O_(in)(max)=7.1 L/min时,晶体生长或易于发生熔体流淌,或不易扩肩,生长过程被迫中止,晶体很难生长成为大尺寸晶体;当内氧流量大于6.6 L/min而小于7.1 L/min时,生长过程稳定,能够生长成为大尺寸晶体。当内氧流量为7 L/min时生长出了直径30 mm、长度45 mm的金红石单晶体。通过能谱仪、X射线衍射仪(XRD)和拉曼光谱仪对晶体的组成、结构和键的结构进行表征,表明该晶体为典型的金红石单晶体,生长方向是[110]。     

籽晶辅助化学气相传输法生长ZnO单晶的特征研究

采用籽晶辅助化学气相传输法生长得到φ32mm ZnO单晶体. X射线衍射表明晶体沿c轴方向生长, 结晶质量较好: 中心部位摇摆曲线半高宽47arcsec, 边缘部分为78.4arcsec. 利用Raman谱、光致发光谱等研究了ZnO晶体退火前后的缺陷和光学性质, 表明经氧气氛退火后晶体缺陷明显减少, 晶体质量进一步提高.     

水溶液提拉法实现KDP单晶柱面扩展

利用水溶液提拉法,把籽晶放在育晶器的底部,沿〈110〉方向进行提拉生长,生长出了截面较大的KDP单晶12mm×12mm×31mm。〈110〉方向的生长速度较传统的溶液降温法得到了一定的提高。这主要是由于提拉使得晶体在提拉方向上的溶质边界层梯度持续发生变化造成的。     

温度梯度和生长速率对CdZnTe-VBM生长晶体的影响

计算模拟了半导体材料CdZnTe垂直布里奇曼法(CdZnTe-VBM)单晶体生长过程，分析了炉膛温度梯度和坩埚移动速率对结晶界面形态和晶体内组份偏析的影响。计算结果表明炉膛温度梯度和生长速率的变化明显影响固-液界面前沿对流场的形态和强度。界面凹陷深度随着炉膛温度梯度的增加和生长速率减小而减小。炉膛温度梯度的增加和生长速率的减小虽然均能有效的减小径向偏析，但却增加轴向偏析，减小轴向等浓度区的长度。     

CdGeAs_2多晶合成与单晶生长研究

对新型中红外非线性光学材料CdGeAs2的多晶合成和单晶生长进行了研究.以高纯(99.9999%)As、Ge、Cd为原料,按照CdGeAs2化学计量比并适当富Cd、As配料,采用机械振荡与熔体温度振荡相结合的方法合成出CdGeAs2多晶材料,使用改进的坩埚下降法生长出-15mm×45mm、外观完整无开裂的CdGeAs2单晶体.XRD全谱拟合精修、红外傅里叶分光光度计测试分析表明:合成的CdGeAs2晶体具有单相四方黄铜矿结构,晶格常数为a=b=0.5946nm,c=1.1217nm;生长出的CdGeAs2单晶体结构完整,结晶性好,晶体的易解理面为(101)面,红外透明范围589~4250cm-1,拟合计算出CdGeAs2晶体的禁带宽度为0.67eV.     

氧化碲大单晶的加压提拉生长

本文叙述了加压单晶炉的结构,重点介绍了传动机构及利用压力下的模拟体等径控制系统实现 TeO_2大单晶生长的直径自动控制。生长出了等径度和质量良好的以[110]、[100]等为提拉生长方向的 TeO_2大单晶,晶体直径为φ35～85mm,等径长度35～100mm,晶体的最大重量达1.4kg。本文还讨论了影响等径生长优质 TeO_2晶体的某些因素。经多次实验证明,我们设计研制的加压单晶炉是一种既经济又有实用价值的装置。     

氟化钙晶体的生长与缺陷研究

采用真空坩埚下降法在石墨坩埚中生长了大尺寸CaF2晶体.通过高温氟化获得无水高纯原料,自发成核发育籽晶,以＜2mm/h的生长速率,成功生长了直径170mm的CaF2晶体.研究了晶体的顶部析晶形貌、包裹体、解理等生长缺陷.     

垂直布里奇曼法生长碘化铅单晶体

碘化铅（PbI2）晶体的平均原子序数较高,有较宽的禁带宽度,作为一种新型室温核辐射探测器材料有着广阔前景．以高纯Pb和I2单质为原料,采用两温区气相输运法（TVM）成功合成出单相PbI2多晶原料,并以此为原科,用垂直布里奇曼法（VBM）生长了3种不同颜色的PhI2单晶体．研究表明：晶体生长工艺参数对晶体的质量有重要影响,适当调整温度场和安瓿在生长炉中的位置,可有效地避免或减轻晶体富碘现象,从而生长出优质的黄色PbI2单晶体。     

碘化铅单晶生长及探测器的研究进展

PbI2单晶体是性能优异的室温半导体核辐射探测器新材料。主要介绍了PbI2晶体生长技术及其室温核辐射探测器研究发展的最新动态,综述了PbI2晶体的3种主要生长方法(气相法、熔体法和凝胶法)的原理和优缺点,重点阐述了熔体法生长PbI2晶体的影响因素及研究进展,提出了PbI2单晶制备技术存在的主要问题和今后的发展方向。     

In Situ Monitoring of Laser‐Assisted Hydrothermal Growth of ZnO Nanowires: Thermally Deactivating Growth Kinetics

The laser‐assisted hydrothermal growth kinetics of a cluster of ZnO nanowires are studied based on optical in situ growth monitoring. The growth yields are orders of magnitude higher than those of conventional hydrothermal methods that use bulk heating. This remarkable improvement is attributed to suppression of precursor depletion occurring by homogeneous growth reactions, as well as to enhanced mass transport. The obtained in situ data show gradually decaying growth kinetics even with negligible precursor consumption. It is revealed that the growth deceleration is caused by thermal deactivation resulting from heat dissipation through the growing nanowires. Finally, it is demonstrated that the tailored temporal modulation of the input power enables sustained growth to extended dimensions. These results provide a key to highly efficient use of growth precursors that has been pursued for industrial use of this functional metal oxide semiconductor.     

Some comments on the Arcan mixed-mode (I/II) test specimen

Although the Arcan specimen has been used frequently for mixed-mode crack growth testing using single-axis servohydraulic test equipment, the specimen and its commonly-used fixturing have features and behaviors that have implications to the proper understanding of results garnered from their use. These implications extend to hardware issues as well, as the Arcan specimen (when mounted at off-axis angles) can generate significant and even potentially damaging side loads on the load frame actuator. This paper discusses a number of the issues associated with the Arcan specimen and Arcan testing.     

Ag+-assisted heterogeneous growth of concave Pd@Au nanocubes for surface enhanced Raman scattering (SERS)

AgNO3 is often used in the preparation of Au nanostructures since Ag-based substances (AgBS) can selectively be adsorbed on Au(100) and significantly modulate the growth of Au nanocrystals.High-index-faceted Au nanostructures have demonstrated excellent performance in catalysis and surface enhanced Raman scattering (SERS),thus attracting the interest of many researchers in the past several decades.Herein,high-index-faceted Pd@Au concave nanocubes (CNCs) were prepared using AgBS as growth-directing agents in the heterogeneous growth of Au on Pd nanocubes (NCs).During the growth of Pd@Au CNCs,Au atoms are initially deposited on the Pd{100} facets leading to the formation of thin Au shells,and then AgBS are quickly adsorbed on the formed Au(100),favoring the growth along 〈111〉 and the formation of Pd@Au CNCs.Transmission electron microscopy (TEM),high resolution transmission electron microscopy (HRTEM),energy dispersive spectroscopy (EDS),high angle annular dark field (HAADF),and scanning transmission electron microscopy EDS (STEMEDS) were used to systematically investigate the growth of Pd@Au CNCs.We also demonstrated that the high-index-faceted Pd@Au CNCs exhibited excellent SERS performances.     

Comparative study of hexagonal and cubic GaN growth by RF-MBE

The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers.     

添加剂对纳米AlOOH晶体生长形态的影响

采用多种添加剂,通过控制添加的剂量,实现了片状、须状、块粒状纳米AlOOH在中性环境下的可控制备,打破了原来的必须在酸性环境下制备纳米AlOOH晶须,以及在碱性环境下制备片状纳米AlOOH的常规,建立了中性环境制备各种形貌的纳米AlOOH的新方法。用扫描电镜、透射电镜以及X射线衍射仪,分析了实验样品的形貌特点和晶体结构特点。运用结晶动力学理论解释了AlOOH晶体生长取向及晶体生长形态聚集方式,揭示了晶体的最终形貌与生长过程中的生长基元的内在联系。     

锗酸铅晶体枝蔓晶生长的实时观察研究

利用实时观察方法对锗酸铅晶体生长枝蔓晶的生长过程进行了描述和分析．发现，枝蔓晶的产生与杂质相关，杂质作为一个成核中心，在其周围存在一个溶质扩散层，这个溶质扩散层的厚度随着晶体生长而增大．当该扩散层的厚度超过某个临界值时，出现枝蔓晶生长，溶质扩散层的临界厚度约为12μm．枝蔓晶主干的生长速度受分支出现以及主干转向的影响．     

Mixed mode fatigue crack growth: A literature survey

The applications of fracture mechanics have traditionally concentrated on crack growth problems under an opening or mode I mechanism. However, many service failures occur from growth of cracks subjected to mixed mode loadings. This paper reviews the various criteria and parameters proposed in the literature for predictions of mixed mode crack growth directions and rates. The physical basis and limitations for each criterion are briefly reviewed, and the corresponding experimental supports are discussed. Results from experimental studies using different specimen geometries and loading conditions are presented and discussed. The loading conditions discussed consist of crack growth under mode II, mode III, mixed mode I and II, and mixed mode I and III loads. The effects of important variables such as load magnitudes, material strength, initial crack tip condition, mean stress, load non-proportionality, overloads and crack closure on mixed mode crack growth directions and/or rates are also discussed.     

Temperature induced hierarchical growth of ZnO microcrystal

Unique ZnO microcrystal composed of hierarchical nanorod arrays was successfully prepared by a surfactant-free process in aqueous solution under moderate temperature. The products were characterized by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The as-prepared ZnO microstructures are of hexagonal phase and high purity. On the basis of SEM images and parallel experiments, a possible formation mechanism for this ZnO microcrystal with hierarchical nanorod arrays is proposed and the reaction temperatures are found to have great influence on inducing secondary nucleation and the hierarchical growth. In addition, the optical properties of the ZnO samples were also investigated by the photoluminescence (PL) spectrometer.     

钛合金中TiC晶体的配位多面体生长基元与生长习性

铸造钛合金中存在八面体、棱面枝晶及光滑树枝晶等不同形态的TiC.本文结合定向凝固试样组织,用配位多面体理论分析了钛合金中TiC的生长基元及生长习性.认为TiC的配位多面体生长基元为六配位的TiC₆,TiC₆生长基元堆积时, {100}面族和{111}面族上的生长速率不同,容易形成以{111}面为显露面的八面体状TiC晶胚.TiC晶胚在熔体中生长时,在生长速率最快的<100>方向上生长出二次枝晶臂,并在生长过程中始终保持小面界面生长特征,最终形成棱面枝晶状TiC.如TiC晶体生长时生长速率慢的面族上形成大量的螺旋位错等缺陷,则棱面消失,形成树枝晶TiC.     

Ni 基高温合金中 MC 碳化物生长的理论形貌

本文应用 PBC 理论证实了 MC 碳化物从 Ni 基高温合金熔体中生长的理想形貌是以{111}面为外表面的八面体.认为 MC 的一种生长基元为由金属原子和周围六个碳原子组成的八面体配位体,在近平衡条件下MC 碳化物的晶体生长机制是该配位体沿晶体的{111}面层状生长.