共查询到20条相似文献,搜索用时 62 毫秒
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引言由碳-氢系统形成的多种多样的材料,如金刚石、石墨直至高聚合的碳氢化合物,其中,人们知之不多的是非晶态类金刚石覆层(ADLC)。这种覆层除碳外,还包含有相当份量的氢。所谓“类金刚石”则表示,ADLC覆层的许多性质,如高硬度、电绝缘性、好的导热性和低的摩擦系数等与晶态的金刚石很相似。表1列出了ADLC覆层的一些最重要的性质。ADLC覆层不仅有这么多优良的性质,而且还可能在较低的温度下沉积出,这就吸引人们将这种技术工业化,以用于磨损防护。 相似文献
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对用直流等离子体化学气相沉积法得到的非晶态氮化硅薄膜结构与性能进行了研究。对氮薄膜的表面显微硬度和剖面显微硬度进行了测试,并对非晶态氮化硅硬度高于晶态氮化硅硬度的原因进行了探讨。 相似文献
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周海 《材料科学与工程学报》1997,(2)
对用直流等离子体化学气相沉积(DC-PCVD)法得到的非晶态氮化硅薄膜结构与性能进行了研究。对氮化硅薄膜的表面显微硬度和剖面显微硬度进行了测试,并对非晶态氮化硅硬度高于晶态氮化硅硬度的原因进行了探讨 相似文献
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化学沉积镍磷非晶态合金沉积过程及耐蚀性的研究 总被引:2,自引:0,他引:2
对化学沉积镍磷非晶在主合金的沉积过程和机制了进行了试验研究。采用扫描电镜,能谱仪和X射线衍射仪对不同沉积时间沉积产物的表面形貌,化学成分,组织结构和耐蚀性能进行了分析与探讨。为提高化学沉积镍磷合金的工艺水平及其应用提供了理论依据。 相似文献
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从强碱性溶液体系不同含 Mo 量的溶液中以及不同电沉积工艺条件下,可以获得非晶态或晶态 Fe-Mo 合金镀层。这种镀液稳定、工艺简单,镀液中允许 Fe~(2+)离子浓度范围宽。获取非晶态Fe-Mo 合金的条件是:保持镀层中含 Mo 量在20wt-%以上。要达到此条件就必须保持镀液中的(Mo)/(Fe+Mo)×100量在66%以上,镀液温度在20—45℃范围内,Fe-Mo 合金镀层才成为非晶态。反之,当镀液温度超过55℃,镀层将转变成为晶态。 相似文献
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Hyun Seok Lee 《Thin solid films》2009,517(14):4070-4073
Amorphous silicon (a-Si) films deposited on glass substrates were crystallized using a thermal plasma jet and the treated films are analyzed to find the relationship between plasma characteristics and crystallization process conditions. The crystallization process conditions were found to have different optimal operating regimes depending on the nozzle geometry. Numerical analysis of the thermal plasma jets showed that the different operating regimes for crystallization were caused by modifications of the plasma characteristics by the nozzle geometry. It is revealed that a stepped-divergent nozzle is more efficient for the thermal plasma annealing process than the conventional cylindrical one due to the broadened high-temperature region and the lowered axial velocity in the plasma jet. 相似文献
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The annealing effects on the structural and electrical properties of fluorinated amorphous carbon (a-C:F) thin films prepared from C6F6 and Ar plasma are investigated in a N2 environment at 200 mTorr. The a-C:F films deposited at room temperature are thermally stable up to 250 °C, but as the annealing temperature is increased beyond 300 °C, the fluorine incorporation in the film is reduced, and the degree of crosslinking and graphitization in the film appears to be enhanced. At the annealing temperature of 250 °C, the chemical bond structures of the film are unchanged noticeably, but the interface trapped charges between the film and the silicon substrate are reduced significantly. The increased annealing temperature contributes the decrease of both the interface charges and the effective charge density in the a-C:F film. Higher self-bias voltage is shown to reduce the charge density in the film. 相似文献
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The oxidation of clean crystalline silicon surfaces is self-limiting at moderate oxygen pressures (10− 5 Pa) and temperatures (500 °C), forming 0.7-0.8 nm thick oxide layers. This study looks at the oxidation of a surface of a thin amorphous silicon film to establish if a similar mechanism is active in this case. We have devised a special experimental procedure to check the oxidation mechanism of thin amorphous silicon films. For the spectroscopic investigations we used photoemission with synchrotron radiation with the highest possible surface sensitivity and resolution. This permits a detailed decomposition of the Si 2p spectral details, using a mathematical decomposition procedure. The results clearly show that the oxidation mechanism of the surface of an amorphous silicon film under similar conditions is severely hindered compared to cases of crystalline substrates, indicating less reactivity at the surface and less transport of oxygen into the amorphous material. 相似文献
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A liquid phase deposition (LPD) method has been devised for the deposition of Ag-TiO2 thin films on ceramic tiles with glazed surface at a low temperature. The Ag-TiO2 thin films obtained were well-adhered, homogenous and coloured by interference of reflected light. The films were characterized by X-ray diffraction and scanning electron microscopy. From these analyses, it was found that silver ions were trapped in TiO2 matrix and their reduction could be achieved at 600°C annealing temperature. The antibacterial activity against S. aureus and E. coli has been studied applying the so called antibacterial-drop test. The Ag-TiO2 thin films exhibited a high antibacterial activity. AAS was used for the quantitave determination of silver ion concentration releasing from the Ag-TiO2 thin film. The releasing rate of silver ions from the Ag-TiO2 film was 0·118 μg/ml during 192 h. The antibacterial effect of Ag-TiO2 thin film before and after aging in a weathering chamber for 48 h was compared and the results show that the antibacterial activity is not compromised after weathering. 相似文献
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评述了液相沉积(类)金刚石薄膜的研究现状,介绍了液相合成(类)金刚石薄膜的装置、液态源及薄膜的性能,分析了如何更好地提高(类)金刚石薄膜质量,并在此基础上提出了一种可能制备出高质量金刚石薄膜的脉冲电弧放电沉积装置. 相似文献
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N.W. Khun 《Thin solid films》2010,518(14):4003-125
Conductive nitrogen-doped tetrahedral amorphous carbon (ta-C:N) thin films fabricated with a filtered cathodic vacuum arc technique were investigated for their ability to detect multiple trace heavy metals such as mercury, copper and lead by linear sweep anodic stripping voltammetry in sodium chloride aqueous solutions. The ta-C:N film electrodes exhibited a significant stripping response for determination of individual elements (Pb2+ and Hg2+) and multiple elements (Pb2+ + Hg2+ and Cu2+ + Hg2+), indicating that these electrodes have a great potential for simultaneously tracing multiple heavy metals in aqueous solutions. 相似文献
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The ZnO thin film deposition process by using an atmospheric pressure (AP) plasma jet is studied. In this process, nebulized ZnCl2 solution is sprayed into the downstream of the nitrogen plasma jet to perform thin film deposition. X-ray diffraction analysis confirms that this AP jet has the capability to convert ZnCl2 solution to well-crystallized ZnO thin films with a hexagonal wurtzite structure in a short time. This film exhibits a smooth and mirror-like appearance visually. Scanning electron microscopy and atomic force microscopy show that the deposited film is dense and continuous with a root mean square surface roughness of 8.6 nm. A 1.29 nm/s deposition rate is obtained using this process. Given the fast deposition rate, we believe that both the temperature and the reactivity of the plasma play important roles. A ZnO film on a larger substrate is fabricated, which suggests the process capability in large area and continuous processing applications. 相似文献