随动压力分布下的非球面抛光去除函数

考虑去除函数对数控小工具抛光光学元件精度的影响,提出了如何根据需要加工的非球面参数以及抛光盘参数得到最优去除函数的方法。由于计算非球面上去除函数的核心是准确获得抛光盘与镜面间的动态压力分布,本文提出利用有限元法仿真抛光盘与非球面间的压力分布,并结合经典Preston方程与行星运动模型来得到非球面不同位置处的去除函数。基于随动压力分布模型,分析了沥青盘抛光非球面时在不同抛光位置处去除函数的变化。在曲率半径为1 000mm的球面上进行了去除函数验证实验。结果表明:基于本文理论得到的去除函线型更接近实际情况,皮尔逊系数达到了0.977。本文提出的方法可以方便地调整加工位置来得到相应的压力分布,实现去除函数的优化,对提高加工效率与精度有实际指导意义。     

晶片抛光机压力加载系统分析

在晶体薄片的双面抛光加工中,实现抛光压力的精确、多模式控制对获得晶片高平面度和无损伤、超平滑的加工质量至关重要。为此,提出了一种基于步进电机的压力加载系统。在简述压力加载系统组成及原理的基础上,对该压力加载系统进行了整体数学建模,并通过Simulink对系统性能进行了仿真分析;最后对石英晶片进行了加工实验。实验结果初步验证了所设计的抛光压力加载系统可以较好地实现抛光压力的动态加载及平稳保持,并获得了平滑的晶片抛光表面。     

NC polishing of aspheric surfaces under control of constant pressure using a magnetorheological torque servo

In this paper, a method of maintaining a constant polishing pressure is proposed for a NC polishing system by controlling the polishing force during the polishing process. First, the NC polishing system is developed to resolve the force–position coupling problem encountered in common polishing processes. It mainly consists of a force control subsystem based on a magnetorheological torque servo to provide a controllable torque to polishing tool to generate the polishing force and a position control subsystem based on a general CNC lathe to control the position of the polishing tool. Second, a constant polishing pressure model is established by controlling the polishing force according to the variation of the curvature of the aspheric surfaces, and the polishing parameters for model are planned. Then, the control model of the polishing system is proposed, and a PID controller is designed for torque tracking with the actual torque feedback from a torque sensor. Finally, polishing experiments are conducted with constant force and constant pressure, respectively. Experimental results show that the surface roughness is greatly improved, the aspheric surfaces can be polished more uniformly with constant pressure than with constant force, and the PID controller can meet the requirements for the polishing force control.     

线性液动压抛光加工的流体动压特性研究

基于流体动压润滑原理提出了线性液动压抛光加工方法。借助计算流体力学数值模拟,研究了抛光辊子结构和加工工艺参数对液动压力大小及分布均匀性的作用规律。结果表明：具有矩形微结构的抛光辊子可以在工件表面产生均匀的液动压力;更大直径的抛光辊子、更高的转速和更小的抛光间隙都可以获得更大的流体动压力,但同时也会使液动压力分布均匀性变差。搭建实验平台并进行抛光实验,线性液动压抛光加工后,K9玻璃表面粗糙度Ra值从45.41 nm降低到0.91 nm。     

机器人恒压球形公自转磨头抛光技术研究

采用工业机器人进行大口径光学元件的研抛过程中,机器人自身定位误差会导致研抛压力产生波动,进而影响去除函数稳定性,为此提出了一种机器人恒压球形公自转磨头抛光方法,并对其结构、工作原理、机器人定位特性以及研抛压力输出特性开展了研究。首先,基于Preston理论构建了材料去除模型,对去除函数形状进行了分析,对所设计抛光磨头的机械结构与工作原理进行了介绍。然后,对机器人定位误差以及磨头输出力响应性与稳定性进行了测量,验证了所提方法能够较好地适应机器人研抛压力波动而做出的力响应控制。最后,进行了定点抛光以及粗、精磨抛加工实验。实验结果表明：利用所提方法去除函数的稳定性强,通过10个周期的粗、精抛加工,面形收敛率分别为9095%、7261%,可获得较高的加工精度与面形质量。     

Numerical analysis of hydrodynamic process of circular-translational-moving polishing (CTMP)

By keeping a pad moving relative to a wafer along a circular path without rotation, we developed a polishing technique called circular-translational-moving polishing (CTMP), which permits multidirectional polishing of the work piece and thus bears the advantage of isotropic polishing and a potential increase of material removal rate (MRR) on the wafer. To illuminate the mechanisms of CTMP and determine the optimum process variables in a CTMP process, a three-dimensional hydrodynamic lubrication model for CTMP with a smooth and rigid pad under a quasi-stable state is established in a polar coordinate system. The model equations are further calculated numerically by the finite difference method. The instantaneous distribution of fluid pressure is obtained, which shows that a negative pressure exists. The reason for negative pressure in CTMP and its effect on polishing is discussed. Moreover, the nominal clearance of the fluid film, roll, and pitch angles under different working conditions are obtained in terms of the applied load, moments, and polishing velocity. The obtained numerical analysis can be used as guidance for choosing operation parameters in a practical CTMP application.     

Numerical analysis of hydrodynamic process of circular-translational-moving polishing (CTMP)

By keeping a pad moving relative to a wafer along a circular path without rotation, we developed a polishing technique called circular-translational-moving polishing (CTMP), which permits multidirectional polishing of the work piece and thus bears the advantage of isotropic polishing and a potential increase of material removal rate (MRR) on the wafer. To illuminate the mechanisms of CTMP and determine the optimum process variables in a CTMP process, a three-dimensional hydrodynamic lubrication model for CTMP with a smooth and rigid pad under a quasi-stable state is established in a polar coordinate system. The model equations are further calculated numerically by the finite difference method. The instantaneous distribution of fluid pressure is obtained, which shows that a negative pressure exists. The reason for negative pressure in CTMP and its effect on polishing is discussed. Moreover, the nominal clearance of the fluid film, roll, and pitch angles under different working conditions are obtained in terms of the applied load, moments, and polishing velocity. The obtained numerical analysis can be used as guidance for choosing operation parameters in a practical CTMP application.     

Effect of downward depth and inflation pressure on contact force of gasbag polishing

Gasbag polishing is a kind of ultra-precision machining technology by means of flexible contact, while how to control the polishing contact force online is one of the key issues. In this paper, by analyzing the effect of downward depth and inflation pressure on the contact force experimentally, and then the coupling contact force model is developed. Thus, the predictions of polishing contact force and inflation pressure in terms of the nonlinear composite material of rubber gasbag can be obtained, which can be used to get the optional combination and controllable range of polishing contact force, and to construct the control system of coupling contact force as well. Experimental study shows that applying coupling contact force model to the control system of gasbag polishing contact force with BP neural network PID control strategy is a proper method, which realizes the polishing contact force controllable online and uniform surface quality of mold.     

磁流变变间隙动压平坦化加工力特性研究

磁流变变间隙动压平坦化加工利用工件的轴向低频振动使磁流变液产生挤压强化效应,可以有效提高加工效果并使光电晶片快速获得纳米级表面粗糙度。通过旋转式测力仪试验研究不同变间隙参数对磁流变变间隙动压平坦化加工过程中抛光正压力的影响规律,结果表明,在工件轴向低频振动作用下,抛光正压力形成脉冲正值和负值周期性的动态变化过程;将工件轴向低频振动过程分解为下压过程与拉升过程,下压速度和拉升速度对动态抛光力有不同的响应特性;随着最小加工间隙的减小抛光正压力会急剧增大;设置最小加工间隙停留时间观察抛光正压力变化,可以发现在工件最小加工间隙停留期间抛光力从峰值逐渐衰减并趋于平稳;挤压振动幅值对抛光正压力影响较小。建立了磁流变变间隙动压平坦化加工材料去除模型,弄清了在动态压力作用下,磨料更新及其附加运动机制,研究了磁流变变间隙动压平坦化加工过程中磨料颗粒对工件表面柔性划擦和微量去除的作用机理,为磁流变变间隙动压平坦化加工的工艺优化提供了理论依据。     

A neural-Taguchi-based quasi time-optimization control strategy for chemical-mechanical polishing processes

Besides the major factors such as the down force, back pressure and the rotating speed of wafer carrier, effect of polishing time is also an important issue in CMP processes. In this study, a neural-Taguchi method based on a cost-effective quasi time-optimisation technique for chemical-mechanical polishing (CMP) processes is developed. The key concept of this new technique is that an optimal process parameter set is obtained through a neural-network-simulated CMP process model. Under such an optimal parameter set, the desired material removal rate within-wafer-nonuniformity can be reached with the optimal polishing time. It has been proved by experiment that the proposed method can offer a better polishing performance while reducing the polishing time by 1/3.     

固液两相磨粒流研抛工艺优化及质量影响

为研究磨粒流对异形腔孔内壁表面以及微小孔的研抛去毛刺等的作用效果,探讨了研抛过程中磨粒流各工艺参数与加工质量间的作用关系。以共轨管这种非直线管为研究对象,对磨粒流抛光共轨管过程进行数值模拟研究,探索各工艺参数对磨粒流研抛的影响。数值模拟结果表明:控制碳化硅体积分数可以改变磨粒流研抛过程中的粘温特性,从而可以控制磨粒流的研抛质量。然后采用正交方法设计实验方案,实验过程中,采集抛光过程中温度和粘度的变化数据,分析磨粒流研抛中粘温特性对磨粒流研抛质量的影响。试验与数值模拟结果表明,在磨粒流研抛共轨管过程中SiC的体积分数比出口压力的极差秩大,磨粒流研抛确实可有效改善工件表面质量。而且本文还进一步得出在本试验条件下,磨粒流研抛共轨管的最佳工艺参数:出口压力为5 MPa,SiC体积分数为0.25%,SiC目数为80,同时获得了表面粗糙度与体积分数的回归方程,可用于指导磨粒流实际研抛生产工作。     

耦合超声场的气液固三相磨粒流多物理场数值模拟研究

针对气液固三相磨粒流抛光研究中流场分布不均问题,对气液固三相磨粒流中的湍流分布、湍流峰值分布、能量分布、温度分布和加工质量等方面进行了研究,对气液固三相磨粒流的抛光方法和抛光问题进行了归纳,提出了一种耦合超声场的气液固三相磨粒多物理场数值模拟方法,利用超声场的交变声压增加了气液固三相磨粒流流场的扰动,改变了流场分布。研究结果表明:不同的超声频率和声压幅值会带来不同的流场分布,其中频率为20 k Hz、声压幅值为30 k Pa的超声场所得的流场分布最优。该研究成果对气液固三相磨粒流抛光方法的推广与实际运用具有重要意义。     

纳米胶体自激脉冲空化射流抛光技术

为了满足光学复杂曲面的精密、高效加工,提出一种利用空化效应促进射流加工效率的光学表面加工方法——纳米胶体自激脉冲空化射流抛光,并研制了加工系统。采用流体动力学对纳米胶体自激脉冲空化射流抛光中的喷射过程进行了仿真,获得了周期为0.3s的自激脉冲射流典型时刻下加工流场的流体动、静压力、速度、空化效应分布规律。进行了纳米胶体自激脉冲空化射流抛光试验,结果表明该系统能够产生效果良好的自激脉冲空化射流。采用该方法对单晶硅表面进行加工可以得到表面粗糙度为Ra0.904nm(Rms1.225nm)的超光滑表面,此加工表面粗糙度质量与相同加工条件下的普通纳米胶体射流抛光相当,但其加工效率较普通纳米胶体射流抛光能够提升20%左右,能够满足光学表面高效精密加工的需要。     

单晶硅同质互抛实验研究

以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明：当抛光压力为48 265 Pa（7 psi）、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。     

基于灰色关联度分析响应面法的橡胶软模端面抛磨表面粗糙度预测

为解决复合材料加筋壁板上筋条与蒙皮配合间隙不均匀的问题,需在刚模表面上粘贴橡胶软模,并通过抛磨橡胶软模来消除配合间隙,然而,若打磨参数选择不当,则橡胶软模表面易起毛,致使粗糙度值过大,易吸附磨屑粉尘。针对上述问题,搭建了一套基于机器人的橡胶材料除尘端面打磨系统,探究了磨粒粒度、磨头转速、打磨压力、离边距离等打磨参数对表面粗糙度的影响规律。提出一种基于灰色关联度分析响应面法的机器人橡胶垫抛磨表面粗糙度预测方法,建立了橡胶材料打磨后粗糙度Ra值的预测模型,该模型的拟合系数R2值为0.9878,表明模型拟合效果好。使用该模型计算出的Ra预测值与观测值的均方根误差为0.014 47,验证了模型预测的有效性。基于预测模型,获得粗糙度Ra值最小（3.3 μm）的参数组合为：磨头转速4158.9 r/min、抛磨压力38.4 N、离边距离30 mm。     

液动压悬浮抛光流场的数值模拟及抛光工具盘结构优化

为对液动压悬浮抛光工具盘结构参数进行优化,首先通过正交试验和CFD数值模拟,利用方差分析法分析抛光工具盘各结构参数对加工区域流体动压力的大小和均匀性的显著性影响;然后使用多元非线性回归方法和遗传算法对正交试验样本数据进行优化,得出最优结构参数。数值模拟试验表明,优化后抛光工具盘产生的动压力均值和均匀性都比优化前抛光工具盘提高了30%。     

自由曲面磁流变抛光最佳压力场获取方法

针对自由曲面光学元件面形较复杂的特点,文中提出了一种磁流变抛光最佳的压力场获取方法.首先通过对磁流变抛光自由曲面光学元件抛光区域的压力场进行分析,得到压力场影响因素;其次,结合压力场影响因素,基于几何相贯理论建立压力场量化形态学评价方法;然后,基于自由曲面的几何模型,将该方法分别用于平面、不同曲率的球面和自由曲面,进行...     

Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network

Chemical mechanical polishing (CMP) is a common method for realising the global planarisation and polishing of single-crystal SiC and other semiconductor substrates. The strong oxidant hydroxyl radicals (·OH) generated by the Fenton reaction can effectively oxidise and corrode the SiC substrate, and are thus used to improve the material removal rate (MRR) and surface roughness (Ra) after polishing of SiC during CMP. Therefore, it is necessary to study the material removal mechanism in detail. Based on the modified Preston equation, the effects of the CMP process parameters on the MRR and Ra after polishing of SiC and their relationship were studied, and a prediction model of the CMP process parameters, MRR, and Ra after polishing was also established based on a back-propagation neural network. The MRR initially increased and then decreased, and the Ra after polishing initially decreased and then increased, with increasing FeSO₄ concentration, H₂O₂ concentration, and pH value. The MRR continuously increased with increasing abrasive particle size, abrasive concentration, polishing pressure, and polishing speed. However, the Ra continuously decreased with increasing abrasive particle size and abrasive concentration, increased with increasing polishing pressure, and initially decreased and then increased with increasing polishing speed. The established prediction model could accurately predict the relationship between the process parameters, MRR and Ra after polishing in CMP (relative prediction error of less than 10%), which could provide a theoretical basis for CMP of SiC.     

An improved polishing method by force controlling and its application in aspheric surfaces ballonet polishing

Ballonet polishing tools, soft gasbags filled with compressed gas, are taking priority over other tools in curved surfaces polishing for their adaptability to change their shape to fit the machined surfaces. However, the real contact stress would be changed by the tensile stress of the bag’s material with the change of the workpiece’s shape even if the internal pressure of the gasbag is kept at a constant value. This paper studies how the tensile stress influences the contact conditions and the contact stress, and it advances an improved ballonet polishing method by contact force controlling. As a typical application, geometry arithmetic and parameter optimization are studied on the process of aspheric surfaces polishing. Theory study and real experiments show that, it is a better way by controlling the contact force rather than by controlling the internal pressure of the ballonet.     

圆平动化学机械研抛过程的流体动力性能分析

根据圆平动化学机械研抛(C ircular-translational-moving Chem icalMechan ical Polishing,CTM-CMP)的运动关系,建立了极坐标下非稳态流体膜厚方程和非稳态下牛顿流体在CTM-CMP过程中的润滑方程。利用有限差分法数值求解获得了瞬时工件与研抛盘间的压力分布和膜厚分布,分析了压力积分载荷、倾覆力矩与研抛速率及姿态角的变化关系。结果表明CTM-CMP过程易于形成负压,有利于提高研磨效率。随着研抛速率的增加,承载能力和倾覆力矩线性增加;随着倾角的增加,承载能力和倾覆力矩非线性增大。分析结果有助于指导CTM-CMP的应用。