溅射靶功率对氮化碳薄膜结构的影响

利用双放电腔微波ECR等离子体增强非平衡磁控溅射技术,在Si(100)上制备氮化碳薄膜,并对薄膜进行了拉曼(Raman)、原子力显微镜(AFM)、X射线光电子谱(XPS)等结构的表征.发现溅射靶功率对制膜工艺、薄膜的结构和表面形貌产生很大影响.随着溅射靶功率的增大,薄膜的沉积速率减小,表面粗糙度增大,薄膜结构中的sp2含量增加.     

花状二维氮化碳在模拟太阳光下光催化降解水中磺胺氯哒嗪机理研究

以三聚氰胺和三聚氰酸为主要原料,在二甲基亚砜中通过自组装过程形成超分子作为前驱体,再进行热缩聚制备了花状形貌的二维氮化碳光催化材料。采用扫描电子显微镜(SEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)和光电化学等对材料进行了系统表征,结果表明所制备的光催化材料为类石墨相的氮化碳(g-C₃N₄,SCN)。且相比较于热缩聚法合成的传统体相的氮化碳,SCN由于其超薄、均匀的结构组成,具有更高的光吸收能力和更低的禁带宽度(E_g)。另外通过密度泛函理论(DFT)计算,对SCN的光催化激发过程进行了深度机理分析,发现材料独特的超薄氮化碳片和孔道结构抑制了光激发过程后电子-空穴对的复合。以废水中常见的活性药物类污染物磺胺氯哒嗪(SCP)为目标污染物,在模拟太阳光的条件下照射45 min后,目标污染物的去除率为100%,且降解的准一级反应动力学常数(k=0.085 min^-1)约为体相氮化碳的两倍。本研究为可应用于高效制药废水污染净化的光催化系统的开发提供了理论指导,也可为新型光催化材料的开发提供借鉴。     

碳热还原氮化法结合泡沫前驱体制备超细氮化铝粉体

本研究使用改良的碳热还原氮化法合成超细氮化铝粉体。以γ氧化铝和蔗糖作为铝源和碳源, 先预处理制备成多孔泡沫, 再通过碳热还原氮化法合成氮化铝粉体。反应过程和产物通过X射线衍射分析、SEM和TEM确定。X射线衍射分析表明整个反应过程不存在氧化铝的相转变。高分辨透射电子显微镜显示γ-Al₂O₃颗粒被无定型碳包裹, 从而抑制了γ-Al₂O₃到α-Al₂O₃的相转变。泡沫的多孔结构促进了氮气的扩散和反应副产物的释放, 使得最低反应温度降低至1450 ℃。SEM结果表明得到的氮化铝颗粒粒径大约为50 nm。本研究合成的氮化铝粉体可用于制备高热导氮化铝陶瓷。     

脉冲电弧放电电离甲醇/氨水溶液合成结晶氮化碳薄膜

利用脉冲电弧放电在大气压下产生的高密度等离子体研究了结晶氮化碳薄膜的低温合成。直流脉冲电弧等离子体由甲醇／氨水溶液液滴通过高压电极时诱导放电产生。利用扫描电子显微镜、X射线衍射、Raman光谱分析了薄膜样品的形貌和结构。在基片温度为450℃时所制样品的X射线衍射分析表明薄膜中含有α-C3N4和β-C3N4两种结构晶体，Raman光谱给出了明显的特征峰，这些特征峰与氮化碳晶体的理论预言值符合较好。当基片温度提高到550℃时．Raman光谱分析表明，样品为炭膜。     

原位选择性氮化法制备t-ZrO2-TiN复合粉料

研究以固溶反应为基础的粉粒制备技术，应用热力学原理分析计算了（Zr,Ti）O2固溶系统的选择性的氮化条件，确定了反应温度对该系统氮化后相组成的影响。采用碳热还原法，在高纯氮气氛下原位反应生成氮化钛，同时保持氮化锆组成和结构不变，利用X射线衍射和X射线荧光光谱对氮化后粉料的物相和氮化效果进行分析，采用扫描电镜对复合粉料的形貌进行观察。     

氮化碳薄膜制备及性能研究进展

本文对氮化碳的结构及制备工艺如溅射、化学气相沉积、离子束辅助沉积、激光烧蚀等作了较为详细的总结与分析,对各种制备工艺条件下的氮化碳的性能包括力学、电学及光学性能进行了讨论,并对今后的发展趋势提出了自己的见解．     

离子束技术沉积羟基磷灰石薄膜的结构及溶解性能

分别采用离子束溅射和离子束增强沉积技术,以烧结羟基磷灰石（HA）陶瓷为靶材,在纯钛金属基片表面沉积HA薄膜．X光电子能谱分析表明：薄膜中Ca、P、O元素的化学态与所用HA陶瓷靶材相接近;相比HA靶材,薄膜表面存在CO₃^2-．X射线衍射分析表明：沉积薄膜均为非晶态结构,经650℃退火处理转变为结晶磷灰石．在模拟体液中的溶解实验揭示：薄膜仅与溶液中Ca、P和O存在离子交换;薄膜易降解,浸泡10天,样品经历了降解、再沉积过程;相比离子束溅射沉积膜,离子束增强沉积膜具有加速沉积Ca、P的能力．     

一步法合成磷掺杂石墨相氮化碳及其光催化性能

以尿素(CO(NH₂)₂)和磷酸氢二铵((NH₄)₂HPO₄)作为原料, 通过热聚合法制备了磷(P)掺杂石墨相氮化碳(g-C₃N₄)材料(P-CN)。通过X射线衍射、红外光谱、X射线光电子谱、扫描电子显微镜、透射电子显微镜、紫外可见漫反射光谱和N₂吸附-脱附对样品进行了表面形貌及结构表征, 通过对罗丹明B(RhB)的降解实验, 研究了样品的可见光催化性能, 对其催化机理进行了分析。结果表明, 合成过程中磷原子的掺杂会取代g-C₃N₄中的C原子, 从而改变g-C₃N₄的表面形貌和电子结构。在可见光条件下, P-CN材料表现出优异的光催化性能, 其对RhB的降解速率明显优于纯氮化碳。其中3%P-CN样品催化活性最高, 反应30 min时, RhB降解率达到96.8%。分析认为, P原子对g-C₃N₄中的C原子的取代使P-CN样品表面处于富电子状态, 并导致P-CN样品导带位置升高, 光电子还原性增强。这些电子与水中的溶解氧形成超氧自由基(·O₂^-), 从而使得光催化性能显著提高。     

掺杂Sb_2O_3/Au对MoS_2溅射膜抗氧化性能的影响

利用 X射线光电子能谱仪 (XPS)对 MoS2溅射膜掺杂 Sb2O3/Au的抗氧化性能进行了研究。结果表明, Sb2O3/Au使得 MoS2溅射膜的结构变得更为致密。同时还改变了 MoSx的化学计量配比,增强了 MoS2溅射膜的抗氧化性能。通过掺杂的 MoS2溅射膜的初始氧化以及在潮湿环境中的氧化只发生在膜表面的 2～ 3个分子层,使得内层被保护得相当好。掺杂是解决 MoS2溅射膜氧化问题的一种行之有效的方法。     

Ag-P共掺杂石墨相氮化碳及其可见光降解性能研究

以硝酸银为银源、次磷酸钠为磷源、双氢胺为氮化碳前驱体，制备了磷银共掺杂氮化碳(P/Ag-CN)。通过X射线衍射、扫描电镜(SEM)、紫外-可见光分光光度计、荧光光谱、BET对样品进行了结构表征，通过光催化降解亚甲基蓝对其进行了光催化性能分析。结果表明：通过元素掺杂有效地改善了直接热缩聚法所得氮化碳比表面积小、光生电子-空穴复合率高的缺陷。与纯g-C₃N₄相比，P/Ag-CN的形貌由紧密堆积的层状结构转变为类似棉花糖的疏松结构，同时展示出更高的比表面积和更优异的光催化性能。当Ag掺杂量为2.5%、P掺杂量为3.0%时，银磷共掺杂g-C₃N₄的光催化性能最优，可达90.02%,其一阶反应速率常数分别是同等掺杂量时单掺杂样品的5.6倍和3.5倍，是纯g-C₃N₄的7.62倍。     

Ag/TiO2薄膜结构和光催化性能研究

采用溶胶-凝胶技术制备了Ag掺杂的TiO₂薄膜.用XRD、氮吸附法、UV-VIS-NIR分光光度计以及XPS对Ag掺杂后TiO₂薄膜结构的变化进行了分析;用分光光学法通过在紫外光照下分解亚甲基蓝的实验比较了TiO₂薄膜与Ag/TiO₂薄膜的光催化性能.结果发现,掺杂适量的Ag有助于TiO₂薄膜光催化氧化性能的提高,原因在于:（1）Ag通过引入耗尽层提高了TiO₂的电荷分离能力,并吸引空穴向薄膜表面移动,结果使薄膜表面空穴的浓度提高,薄膜光催化效率提高;（2）Ag减小了TiO₂粒子的粒径,使TiO₂禁带宽度增大,薄膜光催化氧化的能力提高;（3）Ag掺杂后,TiO₂薄膜表面对-OH基和水的吸附增加,使光照后TiO₂薄膜表面活性自由基·OH的浓度增加,空穴向薄膜所吸附物质的转移能力提高.     

Preparation of Pt-PtOx thin films as electrode for memory capacitors

Pt-PtO_x thin films were prepared on Si(100) substrates at temperatures from 30 to 700°C by reactive r.f. magnetron sputtering with platinum target. Deposition atmosphere was varied with O₂/Ar flow ratio. The deposited films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. Resistively of the deposited films was measured by d.c. four probe method. The films mainly consisted of amorphous PtO and Pt₃O₄ (or Pt₂O₃) below 400°C, and amorphous Pt was increased in the film as a deposition temperature increased to 600°C. When deposition temperature was thoroughly increased, (111) oriented pure Pt films were formed at 700°C. Compounds included in the films strongly depended on substrate temperature rather than O₂/Ar flow ratio. Electrical resistivity of Pt-PtO_x films was measured to be from the order of 10⁻¹ Ω cm to 10⁻⁵ Ω cm, which was related to the amount of Pt phase included in the deposited films.     

新型Sol-Gel技术PZT铁电厚膜的制备及电学性能研究

采用新型ｓｏｌ－ｇｅｌ技术在 Ｐｔ／Ｔｉ／ＳiO2/Si基片上制备出了厚度为 ２～６０μｍ的ＰＺＴ铁 电厚膜材料;研究了ＰＺＴ厚膜的结构及其介电、铁电性能．ＸＲＤ谱分析显示,ＰＺＴ厚膜 呈现出纯钙钛矿相结构,无焦绿石相存在．ＳＥＭ电镜照片显示,ＰＺＴ膜厚均匀一致,无裂 纹、高致密．厚度为５０μｍ的ＰＺＴ厚膜的介电常数为８６０,介电损耗为０.０３,剩余极化强度 是２５μＣ／ｃｍ^２．矫顽场是４０ｋＶ／ｃｍ.     

Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films

Atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) was used to prepare iron doped titanium dioxide thin films. Thin films, between 40 and 150 nm thick, were deposited on Si, SiO₂ and Al₂O₃ substrates using titanium tetra isopropoxide and ferrocene as metal organic precursors. TiO₂ iron doping was achieved in the range of 1–4 at.%. The film morphology and thickness, polycrystalline texture and doping content were studied using respectively scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The influence of growth temperature, deposition time, substrate type and dopant partial pressure were studied. Electrical characterizations of the films were also performed.     

等离子体源增强磁控溅射沉积Al2O3薄膜研究

采用电子回旋共振微波等离子体源增强磁控溅射沉积氧化铝薄膜.X射线光电子谱和X射线衍射分析表明,在600℃沉积温度下,Si（100）基片上获得了亚稳的具有化学计量配比成分、面心立方结构的γ-Al₂O₃薄膜.薄膜的折射率为1.7,与稳定的α-Al₂O₃体材料相当.     

Structure and surface termination of ZnO films grown on (0001)- and (112¯0)-oriented Al2O3

We have studied the surface termination of ZnO(0001¯) films grown on Al₂O₃ substrates with high epitaxial quality. The structural properties of the ZnO films were investigated by X-ray scattering, revealing a predominant (0001¯)ZnO out-of-plane texture with the [112¯0]_ZnO[0001]_Al2O3 and [112¯0]_ZnO[101¯0]_Al2O3 azimuthal orientations for (112¯0)Al₂O₃ and(0001)Al₂O₃ substrates, respectively. The surface termination was determined by X-ray photoemission spectroscopy (XPS) via pyridine (C₅H₅N) adsorption at the ZnO surface. XPS data recorded at different temperatures after exposure to pyridine revealed that for both orientations of the Al₂O₃ substrates the deposited ZnO films were terminated by oxygen atoms, i.e. corresponding to a ZnO (0001¯) surface.     

单源热蒸发制备有机无机杂化CH3NH3PbI3薄膜及其性能表征

采用全真空单源热蒸发沉积技术直接制备钙钛矿太阳电池用有机无机杂化CH₃NH₃PbI₃薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散谱仪(EDS)和分光光度计对制备的CH₃NH₃PbI₃薄膜微结构、表面形貌、化学成分和光学性能进行表征分析, 并与非真空旋涂法制备的CH₃NH₃PbI₃薄膜性能进行比较。结果表明: 单源热蒸发法制备的CH₃NH₃PbI₃薄膜呈现单一的钙钛矿四方晶体结构, 且与蒸发源材料的晶体结构同源性高, 没有出现杂质相偏析; 对比旋涂法制备的CH₃NH₃PbI₃薄膜表面均匀致密平整, 且薄膜结晶度更高; 单源热蒸发法制备的CH₃NH₃PbI₃薄膜禁带宽度为1.57 eV, 符合钙钛矿太阳电池吸收层光学性能要求。     

低温反应溅射Al+α-Al2O3复合靶沉积α-Al2O3薄膜

低温沉积α-Al₂O₃薄膜是拓展其实际工程应用的关键。本研究以Al、α-Al₂O₃和Al + 15wt% α-Al₂O₃为靶材, 用射频磁控溅射在Si(100)基体上沉积氧化铝薄膜。用掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、能谱仪(EDS)对所沉积薄膜的相结构和元素含量进行研究, 用纳米压痕技术测量薄膜硬度。结果表明, 在550 ℃的基体温度下, 反应射频磁控溅射Al+α-Al₂O₃靶可获得单相α-Al₂O₃薄膜。靶中的α-Al₂O₃溅射至基片表面能优先形成α-Al₂O₃晶核, 在550 ℃及以上的基体温度下可抑制γ相形核, 促进α-Al₂O₃晶核同质外延生长, 并最终形成单相α-Al₂O₃薄膜。     

Growth of SrTiO3 thin epitaxial films by aerosol MOCVD

SrTiO₃ thin films were prepared by aerosol metal-organic chemical vapour deposition on (001) MgO, R-plane Al₂O₃ and (001) Si single-crystal substrates. Strontium tetramethyl heptadionate and titanium n-butoxide dissolved in diethyleneglycol dimethyl ether were used as precursors. The structure of the films was investigated by X-ray diffraction and transmission electron microscopy. Epitaxial films with [001] and [111] orientation perpendicular to the substrate surface were obtained on MgO and Al₂O₃, respectively. The epitaxial films on the MgO substrate were found to be in a relaxed state with lattice parameters corresponding to the bulk values. SrTiO₃ films on the Si substrate were grown as highly textured in the [011]direction and randomly oriented in the plane parrallel to the substrate surface.     

Effect of micro-characterization on thrombus formation ability of TiO film

The thrombus formation ability of a biomedical microcoil for hemangioma treatment is one of the basic requirements in clinical intervention application. Surface modification of a biomedical microcoil can improve its thrombus formation ability. In this work, TiO₂ films were deposited using the unbalanced magnetron sputtering method. The structures, components and micro-morphologies of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and scanning electron microscope (SEM). The thrombus formation ability of the films was studied by in vitro platelet adhesion test. The results indicated that a certain characteristic TiO₂ film has the ability to increase thrombus formation. Furthermore, the biological behavior of cultured human umbilical vein endothelial cells (HUVECs) onto different films was investigated by an in vitro HUVECs cultured experiment. The results showed that endothelial cells on certain TiO₂ film surfaces have good adherence, growth and proliferation. Additionally, the relationship between the micro-characterization and biological properties of TiO₂ films is discussed.