VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Si/MoS2及C-Si/MoS2涂层在不同湿度条件下摩擦磨损性能

为了改善传统MoS_2涂层的摩擦学性能,利用中频直流磁控溅射技术在硅片和304不锈钢上沉积Si/MoS_2和2种不同碳含量的C-Si/MoS_2复合薄膜,利用扫描电镜(SEM)配备的EDS设备对薄膜的成分及厚度进行表征,利用真空摩擦磨损试验机(CSM)测试不同湿度条件下Si/MoS_2和C-Si/MoS_2的摩擦磨损性能。结果表明:2种不同碳含量的C-Si/MoS_2含有相似的Si含量,Si在薄膜中以单质的形式存在;Si/MoS_2薄膜随着湿度的增加,摩擦因数持续增加,同Si/MoS_2薄膜相比,掺碳量49.08%(原子分数)的C-Si/MoS_2薄膜摩擦性能得到优化,仅在24%湿度下摩擦因数高于纯Si/MoS_2薄膜;含碳量为49.08%的C-Si/MoS_2薄膜磨损程度最小,这是因为C在摩擦过程中易剪切滑移,与MoS_2耦合润滑,优化了薄膜的摩擦学性能;真空下,Si/MoS_2薄膜及C-Si/MoS_2薄膜的磨损机制为黏着磨损,而在不同湿度条件下,由于水蒸气和氧气的作用,Si/MoS_2薄膜及C-Si/MoS_2薄膜均会发生氧化磨损及磨粒磨损。     

改善器件性能的射频退火

一、概述在SiO_2—Si结构中,界面态和固定界面电荷及SiO_2中的陷阱电荷,严重地影响了Si平面器件的性能及稳定性。为了减少陷阱电荷对热电子的俘获,必须抑制热电子发射,并减少SiO_2中的陷阱电荷。实践证明,采用退火处理解决这个问题是行之有效的。     

下一代移动通信领域氮化镓基射频器件关键技术

GaN射频器件通过MOCVD方法在大尺寸SiC衬底上生长高质量的GaN薄膜和GaN/AlGaN异质结。利用成熟半导体工艺设备和薄膜芯片制备技术,开发GaN射频器件制造和封装技术。通过工艺整合、良率及量产稳定性,形成GaN异质结外延材料、芯片制备和器件封装一系列完整产业链,实现高性能GaN射频器件的关键技术突破。     

退火制度对PZT铁电薄膜性能的影响

铁电薄膜的性质对于硅基MEMS器件有重要的影响,鉴于此本文尝试通过改善退火工艺以提高PZT薄膜的铁电和压电性质.采用溶胶凝胶法,在Si/SiO2/Ti/Pt衬底上制备了PZT铁电薄膜.实验中,采用一次退火工艺和每层退火工艺制备了两种PZT薄膜,采用XRD对薄膜的晶体结构进行分析,通过C-V和I-V特性的研究发现,每层退火工艺有助于提高PZT薄膜的C-V性质,并降低漏导电流.     

SiN_x和SiN_x/SiO_x薄膜的荧光和红外吸收光谱研究

采用射频磁控溅射法在Si(100)和含有SiOx缓冲层的Si(100)上制备SiNx薄膜。直接生长在Si(100)的SiNx薄膜几乎不发光;而SiNx/SiOx薄膜在650℃以上的高温热处理后有非常强的光致发光,当退火温度为800oC时发光强度达到最高。傅立叶红外吸收研究表明,直接生长在Si(100)的SiNx薄膜在退火后氧化程度略有增加;而SiNx/SiOx薄膜在高温热处理后氧化程度明显升高,但过高温度的退火会导致Si-N键显著减少。分析认为SiNx/SiOx薄膜的发光与Si-N键和Si-O键密切相关。     

静电辅助气溶胶化学气相沉积法制备Al_2O_3薄膜

以乙酰丙酮铝为前驱体,N,N-二甲基甲酰胺为溶剂,采用静电辅助的气溶胶化学气相沉积(ESAVD)方法,在Si(100)衬底上制备了Al2O3薄膜,并采用场发射扫描电镜、能谱仪、X射线衍射仪和自动划痕仪等设备对制备的薄膜进行了表征。结果表明:采用ESAVD法制备的Al2O3薄膜平整致密而且晶粒细小,薄膜与基体之间及薄膜内部都未出现开裂现象;薄膜与基体的结合力约为5.56 N;沉积得到的薄膜为化学计量比为2∶3的氧化物薄膜;退火前的薄膜为非晶态,在1 200℃退火保温2 h后薄膜转变为-αAl2O3。     

衬底对溶胶-凝胶法制备ZnO压电薄膜的影响

采用溶胶-凝胶法分别在晶态衬底Si/SiO2/Ti/Pt和无定形态衬底Si/SiO2上制备了ZnO压电薄膜.以X射线衍射仪和原子力显微镜研究了薄膜的002择优取向度和表面形貌.结果表明,采用溶胶-凝胶法在Si/SiO2/Ti/Pt和Si/SiO2衬底上都能制备出具有较好择优取向,表面粗糙度低的ZnO薄膜,而且由于Pt和ZnO的晶格失配度较小,在Si/SiO2/Ti/Pt衬底上生长的ZnO薄膜形成002择优取向的退火温度低于在Si/SiO2衬底上生长的薄膜形成002择优取向的退火温度.     

MoS_2/石墨烯复合材料对NO_x气敏特性影响分析

为了快速准确检测汽车尾气中的NO_x气体浓度,采用低温水热法制备了MoS_2/石墨烯复合纳米材料。利用掩膜法将制备的MoS_2/石墨烯镀膜于氧化铝基体表面形成敏感薄膜,制作了一种薄膜型NO_x传感器。采用扫描电子显微镜(SEM)、高分辨透射电子显微镜(HR-TEM)和X-射线光电子能谱(XPS)仪,表征了MoS_2/石墨烯的相组成、微观形貌和电化学特性,分析了MoS_2/石墨烯复合材料对NO_x的气敏机理。在气体传感器静态测试系统上,测试了NO_x传感器灵敏度、温度、响应-恢复、抗干扰和长期稳定等特性。结果表明,MoS_2/石墨烯传感器灵敏度是MoS_2传感器2.1倍,响应时间为3.6 s,恢复时间为9.9 s,具有良好的重复性、选择性和长期稳定性。表明该传感器可实现汽车尾气中NO_x准确检测。     

含超细SiO_2/MoS_2粉锂基润滑脂摩擦学性能研究

采用四球摩擦磨损试验机研究了纳米SiO_2及超细MoS_2的粒径、添加量和载荷对2~#锂基脂摩擦学性能的影响,并研究了2种超细粉复配比例和载荷对2~#锂基脂摩擦学性能的影响。结果表明:单一纳米SiO_2和超细MoS_2的加入均能明显减小润滑脂的摩擦因数和钢球磨斑直径,纳米SiO_2和超细MoS_2的复配有助于进一步改善含超细粉锂基脂的摩擦学性能。当纳米SiO_2与MoS_2质量比为2∶8,总加入质量分数为2.0%时,润滑脂的摩擦因数和钢球磨斑直径较基础脂分别减小了77.1%和46.42%。利用SEM和EDS分析磨斑表面形貌及元素组成,初步探讨了含超细复合粉润滑脂的抗磨减摩机理。SEM和EDS分析表明:纳米SiO_2在摩擦过程中主要作用是填补磨痕沟壑,而超细MoS_2除填补沟壑外还对摩擦副表面有抛光研磨和形成减摩膜的作用,2种超细粉的协同使润滑脂具有自修复和抗磨、减摩作用。     

Characterization of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition

In this work, the results of compositional and microstructural analysis of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition are discussed. The cross-section transmission electron microscope (TEM) micrographs of the La-Ru-O film deposited on a SiO2/Si substrate and annealed at 700 degrees C revealed RuO2 crystals embedded in a glassy silicate matrix. When the La-Ru-O film was deposited on a Pt/TiO2/SiO2/Si substrate, RuO2 and La4Ru6O19 crystallized after annealing at 700 degrees C. After firing at 550 degrees C randomly oriented lead zirconate titanate (PZT) thin films crystallized on the La-Ru-O/SiO2/Si substrate, while on La-Ru-O/Pt/TiO2/SiO2/Si substrates PZT thin films with (111) preferred orientation were obtained. No diffusion of the Ru atoms in the PZT film was found. Ferroelectric response of PZT thin films on these substrates is shown in comparison with the PZT film deposited directly on the Pt/TiO2/SiO2/Si substrate without a La-Ru-O layer.     

Characteristics of Sputter-deposited Gadolinia-doped Ceria Thin Films on Al2O3/SiO2/Si Systems

Metal oxide films prepared by thin film technology have been reported for the potential applications on thin solid electrolyte layers for solid oxide fuel cells(SOFCs). Gadolinia-doped ceria(GDC) thin films and Al2O3 layers on SiO2/Si substrates are successively deposited by RF reactive magnetron sputtering from a cerium-gadolinium (90:10 at.%) alloy target and Al target in O2/Ar gas mixture and then perform post-thermal treatments at 300-700 ℃ and 900 ℃ for 2 h, respectively. Materials characteristics and chemical compositions of GDC films and Al2O3 layers are investigated by X-ray photoelectron spectroscopy(XPS), cross-sectional scanning electron microscopy(SEM), X-ray diffraction(XRD), and atomic force microscopy(AFM). Stoichiometric Al2O3 layers with polycrystalline structures are firstly prepared onto SiO2/Si substrates. A cubic fluorite structure with columnar crystallites of GDC films is successfully deposited on Al2O3/SiO2/Si systems. The chemical composition of 700 ℃-annealed GDC films is (Ce0.91Gd0.09)O1.94 and possesses a higher film density of 7.257 g/cm3. As a result, GDC thin films prepared by RF reactive magnetron sputtering and post-thermal treatments can be used as thin solid electrolyte layers for intermediate temperature SOFCs system as compared to the well-known yttria-stabilized zirconia(YSZ).     

载流下MoS2/Ag纳米复合薄膜摩擦学性能

MoS₂基纳米复合薄膜具有良好的摩擦学性能,但较差的导电性能限制了其在载流条件下作为润滑材料的应用。为提高MoS₂基纳米复合薄膜的导电性能,采用非平衡磁控溅射系统沉积2种不同Ag含量的MoS₂/Ag纳米复合薄膜,并在不同的电流条件下研究MoS₂/Ag纳米复合薄膜与GCr15钢球对摩时的摩擦学性能。结果表明：在载流下2种MoS₂/Ag纳米复合薄膜表现出相似的摩擦性能,而低掺杂MoS₂/Ag薄膜具有更佳的耐磨性能,这归因于低掺杂MoS₂/Ag薄膜具有较好的力学性能;无载流时,MoS₂/Ag纳米复合薄膜在摩擦过程中生成的氧化物颗粒增加了磨损、降低了润滑性,磨损机制主要为磨粒磨损;电流小于0.5 A时,电流促进了转移膜形成,使得摩擦因数降低,但磨损率增加,磨损机制主要为黏着磨损;当电流大于0.5 A时,由于电弧烧蚀加速了薄膜的磨损,磨损机制主要为磨粒磨损、黏着磨损和电弧腐蚀磨损。     

Mechanical properties and tribological behavior of ZrO<Subscript>2</Subscript> thin films deposited on sulfonated self-assembled monolayer of 3-mercaptopropyl trimethoxysilane

A silane coupling reagent (3-mercaptopropyl)trimethoxysilane (abridged as MPTS) was self-assembled on a single-crystal Si substrate to form a two-dimensional organic monolayer (MPTS-SAM). The terminal –SH group in the MPTS-SAM film was in-situ oxidized to –SO₃H group to endow the film with good chemisorption ability. Then ZrO₂ thin films were deposited on the oxidized MPTS-SAM by way of the enhanced hydrolysis of aqueous zirconium sulfate (Zr(SO₄)₂·4H₂O) in the presence of aqueous HCl at 50 °C, making use of the chemisorption ability of the –SO₃H group. The thickness of the ZrO₂ films was determined with an ellipsometer, while their morphologies and corresponding friction forces were analyzed by means of atomic force microscopy. The hardness and elastic modulus of the ZrO₂ thin films were determined on a Nanoindentation II (MET) instrument. The macro-friction and wear behaviors of the ZrO₂ films sliding against an AISI-52100 steel ball were examined on a unidirectional friction and wear tester and the worn surface morphologies observed on a scanning electron microscope (SEM). As the results, the as-deposited ZrO₂ thin film at a deposition duration of 100 h is about 100 nm thick, it decreases to 48 nm after annealing at 500 °C and further decreases to 45 nm after heating at 800 °C. The as-deposited ZrO₂ film is relatively rougher, with the rms to be about 1.0 nm, while the ZrO₂ thin films heated at 500 and 800 °C have surface roughness rms of 0.76 nm and 0.68 nm, respectively. The ZrO₂ film annealed at 800 °C has a high hardness to elastic modulus (H/E) ratio (0.062) as compared to the as-deposited ZrO₂ film and the film annealed at 500 °C. Both the two annealed ZrO₂ films show excellent wear-resistance as they slide against AISI-52100 steel at a normal load below 2.0 N, while the one annealed at 800 °C has better wear-resistance. The differences in the friction and wear behaviors of the as-deposited ZrO₂ film, the ZrO₂ film annealed at 500 °C and that annealed at 800 °C are attributed to their different micro structures and compositions. Since the ZrO₂ films was well adhered to the underlying MPTS-SAM, it might find promising application in the surface-protection of single crystal Si and SiC subject to sliding at small normal load in microelectromechanical systems (MEMS).     

射频磁控溅射法制备MoS2/SiC双层薄膜

采用射频磁控溅射法在室温、500℃的单晶硅和GCr15钢基体上制备了MoS2/SiC双层薄膜,并借助X射线衍射仪、扫描电子显微镜、摩擦磨损试验机以及划痕仪等研究了薄膜的结构、形貌、成分、摩擦学性能以及薄膜与基体的结合力。结果表明:当衬底温度为500℃时制备的MoS2/SiC双层薄膜表面致密平整,两层薄膜之间界面平直,膜厚约为0.8μm;该双层膜的摩擦因数低,耐磨性好;添加中间层可提高薄膜与基体的结合力。     

MoS2/WS2复合薄膜的环境适应性和摩擦学性能

湿热大气环境对MoS2润滑薄膜的摩擦学性能有严重的劣化作用。采用非平衡磁控溅射技术成功制备了WS2掺杂MoS2复合薄膜,研究发现,MoS2基体中掺入少量WS2可以诱导MoS2沿（002）晶面择优生长,薄膜结构变得更加致密,显著抑制腐蚀介质的渗透和扩散,使MoS2/WS2复合薄膜展现出高盐雾耐蚀性、小摩擦因数和低磨损率。成分优化的MoS2-1.6%WS2（原子分数）复合薄膜在经历4天的盐雾试验后仅表层被氧化,仍能保持0.16的小摩擦因数和3.80 × 10-6 mm3/（N·m）的低磨损率。     

退火时间对Cu-Al-O薄膜性能影响的研究

通过制备Cu-Al-O薄膜并对其进行退火处理,研究了退火时间对薄膜形貌、结构以及紫外-可见透过率、带隙、中红外透过率的影响。研究结果表明:随着退火时间的增加,薄膜开始晶化,5.0 h时薄膜中出现裂纹,同时出现AlCu合金相;紫外-可见透过率随退火时间的增加而降低;中红外透过率随退火时间的增加先增加后降低;Cu-Al-O薄膜的直接带隙随退火时间的增加而降低。     

Measurement of the refractive index dispersion of As2Se3 bulk glass and thin films prior to and after laser irradiation and annealing using prism coupling in the near- and mid-infrared spectral range

The prism coupling technique has been utilized to measure the refractive index in the near- and mid-IR spectral region of chalcogenide glasses in bulk and thin film form. A commercial system (Metricon model 2010) has been modified with additional laser sources, detectors, and a new GaP prism to allow the measurement of refractive index dispersion over the 1.5-10.6 μm range. The instrumental error was found to be ±0.001 refractive index units across the entire wavelength region examined. Measurements on thermally evaporated AMTIR2 thin films confirmed that (i) the film deposition process provides thin films with reduced index compared to that of the bulk glass used as a target, (ii) annealing of the films increases the refractive index of the film to the level of the bulk glass used as a target to create it, and (iii) it is possible to locally increase the refractive index of the chalcogenide glass using laser exposure at 632.8 nm.     

纳米硅-氧化硅薄膜的XPS测量

利用XPS能很好地分辨出硅基纳米硅-氧化硅膜层中的n-Si和n-SiO2。对Si2P峰进行的拟合处理，可计算出n-Si和n-SiO2的含量，其结果与RF-磁控溅射沉积薄膜中所用的复合靶Si和SiO2的面积比基本一致。     

W-C-S-Mo复合薄膜的制备及力学和摩擦学性能

利用磁控溅射与磁过滤阴极真空电弧（MS/FCVA）复合沉积法，在不同偏压下在单晶Si基体上制备W-C-S-Mo四元复合薄膜；分析沉积偏压对薄膜纳米硬度、弹性模量和膜基结合力等力学性能的影响；在潮湿大气、真空环境下研究偏压对薄膜摩擦学性能的影响。结果表明，薄膜硬度、弹性模量和附着力随着沉积负偏压的增大呈现先增大后减小的趋势，在偏压-100 V时薄膜力学性能最好；负偏压-100 V下制备的W-C-S-Mo四元复合薄膜样品在潮湿大气和真空环境下均具有较好的摩擦学性能，拉曼测试发现，W-C-S-Mo复合薄膜在潮湿大气环境中的润滑作用主要由DLC提供，而在真空环境中薄膜中的软质相MoS2晶粒起润滑作用。