质子轰击GaP外部电光采样

采用质子轰击n-GaP晶体作为外部电光采样材料,用倍频移相扫描电光采样技术和反射式光路结构,对ITO共面波导上的微波信号进行了测量.结果表明,用质子轰击的方法可以使n-GaP样品的电阻增大四个量级,接近于半绝缘材料,能有效地减小GaP晶体内部自由电荷对电场的屏蔽效应.在2.30GHz微波信号时,质子轰击GaP外部电光采样测量获得了40mV(/Hz)的电压灵敏度.     

ZnO∶Al替代ITO作透明导电膜的应用

研究了AZO(ZnO∶Al)替代ITO透明导电膜在GaN基LED中的应用,通过脉冲激光沉积和磁控溅射法制作了AZO薄膜,分析了AZO与p型GaN不良的欧姆接触的物理机理,并利用插入ITO薄层来改善接触电阻,实验用ITO 20nm/AZO 500nm的复合导电薄膜做透明导电薄膜,成功得到了波长为525.74nm、亮度为380.88mcd、电压为3.35V的GaN基绿光LED芯片,相当于单一ITO透明导电膜的性能,整个试验工艺中减少了ITO的使用量,降低了LED芯片的制造成本。     

质子轰击GaP外部电光采样

采用质子轰击 n- Ga P晶体作为外部电光采样材料 ,用倍频移相扫描电光采样技术和反射式光路结构 ,对 ITO共面波导上的微波信号进行了测量 .结果表明 ,用质子轰击的方法可以使n- Ga P样品的电阻增大四个量级 ,接近于半绝缘材料 ,能有效地减小 Ga P晶体内部自由电荷对电场的屏蔽效应 .在 2 .30 GHz微波信号时 ,质子轰击 Ga P外部电光采样测量获得了 40 m V/Hz的电压灵敏度 .     

用于液晶光阀空间光调制器的ITO透明导电膜的研制

本文介绍了ITO(Indium Tin Oxide)透明导电膜的制备工艺,对影响其光学和电学特性的因素作了分析。并讨论了透明导电的机理,在K9玻璃上制备的ITO透明导电膜,在500～600nm波长范围内,典型的峰值透过率为90％,面电阻为40～50Ω/□。用该技术制备的样品作为透明电极,在液晶光阀空间光调制器中得到了应用。     

CdS0.1Se0.9纳米晶体的电光性质

对嵌埋于玻璃基体中的ＣｄＳ０．１Ｓｃ０．９纳米晶体进行了室温电调制透射谱测量，观察到较强的共振和非共振电光响应倚号（１０－４～１０－３）．共振电光响应具有如下特征：同一组分的纳米晶体其倩号的峰位随着尺寸减小向高能方向移动；同一样品谱线形状不随外电场强度而变；信号幅度与外电场强度的平方成线性关系，并且随调制频率的增加而减小；共振电光效应的物理机制是量子受限的Ｓｔａｒｋ效应．非共振电光响应信号呈与波长有关的振荡线形；外电场强度增加，非共振电光响应信号幅度也增加；用介电受限的局域场增强理论解释了非共振电光效应的物理机制．     

低翘曲度ITO透明导电膜玻璃的工艺研究

研究了不同厚度ITO膜的大尺寸超薄导电玻璃的翘曲度,ITO膜形成期间基片温度对ITO膜层晶体化程度的影响及不同基片温度下形成的ITO膜层在不同的退火条件下的退火前、后的电阻率和膜压应力.实验发现,ITO膜层的很高的压应力是导致导电膜玻璃翘曲的直接原因;采用室温沉积非晶ITO膜,然后经高温热退火可获得低膜压应力多晶相ITO膜.基于实验结论,提出了一种适合批量生产的低翘曲度ITO膜导电玻璃的制备工艺.     

快速热退火对ITO薄膜及LED芯片性能的影响

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN基LED外延层,采用磁控溅射法制备了氧化铟锡(ITO)薄膜,ITO薄膜用于制作与p-GaN的欧姆接触.研究了快速热退火温度为550℃,退火时间为200 s时,不同氧气体积流量对ITO薄膜性能及LED芯片光电性能的影响.结果表明:不通氧气时,ITO薄膜的方块电阻和透过率分别为33 Ω/口和93.1％,LED芯片出现电流拥挤效应,其电光转换效率只有33.3％;氧气体积流量为1 cm3/min时,ITO薄膜的方块电阻和透过率分别为70 Ω/口和95.9％,LED芯片的电流扩展不佳,其正向电压较高,电光转换效率为43.8％;氧气体积流量为0.4 cm3/min时,ITO薄膜的方块电阻和透过率分别为58 Ω/口和95.4％,LED芯片的电流扩展最佳,其亮度最高、正向电压最低,电光转换效率较高,为52.9％.     

ITO薄膜的溶胶-凝胶法制备

介绍了几种用溶胶 凝胶法制备ITO薄膜的工艺方法 ,用其中一种无机的方法成功制备了ITO透明导电膜。当薄膜厚度为 30 0nm左右时 ,所得ITO薄膜在可见光区域内的平均透过率在 85 %以上 ,电阻率最低可达 0 .1 5Ω·cm。     

使用新型ITO膜的EL触摸板

这种2mm 厚电致发光(EL)触摸板用浸涂工艺制成,具有双面氧化铟锡(ITO)透明导电膜,电耗为发光二极管(LED)板的1/3,作为 LCD 背光源时,功耗小于发光二极管的1/10。ITO 膜的开发者松下电器实业公司应用他们的新式膜和 Showa Shell Sekiyu 制造的EL 板,设计了这种新型的触摸板。双面导电膜用无机铟化合物、有机锡化合物和有机溶剂     

石墨烯透明导电膜研究与产业化进展

石墨烯作为一种新型二维碳纳米材料,具有许多独特的物理化学性质。尤其是其良好的透光性、高导电性、较好的机械强度等性质,近年来受到了透明导电膜领域的广泛关注与研究。与氧化铟锡(ITO)薄膜相比,石墨烯透明导电膜具有透光性和稳定性好、柔性更佳等特点。本文概述了石墨烯薄膜及其在透明导电膜应用的研究现状与产业化进展,分析了其在发展过程中存在的瓶颈,并展望了未来产业的发展趋势。     

Effects of contact electrode size on the characteristics of polycrystalline-Si p-i-n solar cells

The effects of contact electrode size on the photo-voltaic characteristics of polycrystalline-Si p-i-n solar cells have been studied,with respect to a unit-cell pitch size of 1μm width.For the non-transparent Al contact electrode with a contact width of 0.05-0.2μm,the short-circuit current is obviously reduced with increasing contact width,due to a larger area of optical reflection by the electrode.On the other hand,even when using a transparent ITO(indium-tin-oxide) electrode,a larger width of contact electrode may also cause a smaller short-circuit current, due to a larger area of optical absorption by the electrode.However,for this ITO electrode,the contact electrode of 0.05μm width causes a smaller short-circuit current than that of 0.1μm width,primarily ascribed to a smaller area for collecting carrier and a larger contact resistance.As a result,while using the ITO contact electrode to enhance the conversion efficiency of the solar cell,a proper width of contact electrode should be employed to optimize the photo-voltaic characteristics.     

Using Self‐Assembling Dipole Molecules to Improve Hole Injection in Conjugated Polymers

Surface modification of indium‐tin‐oxide (ITO)‐coated substrates through the use of self‐assembled monolayers (SAMs) of molecules with permanent dipole moments has been used to control the ITO work function and device performance in polymer light‐emitting diodes based on a polyfluorene hole transporting copolymer. Measured current–voltage characteristics of the devices reveal greatly increased hole injection currents from the SAM‐altered electrodes with higher work function, in agreement with an expected reduction in the barrier for hole injection. In particular, it is shown that the SAM‐modified electrode with the highest work function provides an ohmic contact for hole injection into the studied polymer. Injection from the widely used poly(2,3‐ethylenedioxythiophene)/polystyrenesulphonic acid (PEDOT:PSS)‐coated ITO anode system, is less efficient compared with some of the studied SAM‐coated ITO anodes despite the significantly higher work function measured by a Kelvin probe. This apparently anomalous situation is attributed to the inhomogenities in the injection processes that occur over the area of the device when the PEDOT:PSS‐coated ITO electrode is used.     

同轴双栅极SPINDT阴极的模拟与分析

描述了双栅极场致发射阴极的电子束聚焦问题.通过IESLORENTZ-2D 对单栅极单个SPINDT微尖的模拟,表明模拟与实验数据符合得很好.对带有同轴聚焦电极的单个SPINDT微尖也进行了模拟,并且分析了影响电子束聚焦的各种几何和电参数.结果表明,为了满足设计标准,应当同时考虑聚焦效果和发射特性.     

基于有机电致发光显示的透明导电膜ITO

介绍了ITO作为OLED器件阳电极时，ITO各参数对OLED整体性能，如发光亮度、效率、寿命和稳定性的影响，并以溅射ITO工艺为例，分析了制备与处理环境对ITO的方阻、透过率、表面平整度及功函数的影响。针对其成因．提出了一些改进措施。对高性能平板显示OLED器件用透明导电阳极的研制具有一定的参考价值。     

Blue Flexible Transparent Organic Light-Emitting Devices

Blue transparent organic light-emitting devices (TOLEDs) and blue flexible OLEDs (FOLEDs) have been fabricated on glass and plastic films, respectively. We have also fabricated blue flexible transparent OLEDs (FTOLEDs) having both flexibility and transparency by using indium–tin–oxide:cesium (ITO:Cs) as a cathode. A Cs-incorporated ITO electrode is useful for the fabrication of not only a TOLED on a glass substrate but also a flexible TOLED on a plastic film.      

A voltage calibration technique of electro-optic probing for characterization internal to IC’s chip

This paper simulates the electric potential distribution and the electro-optic (EO) signal amplitude in a longitudinal poled EO polymer external probe tip on the electric signal transmission lines under test. The influence of the circuit layout on the EO probing is discussed. A novel probing configuration with a poled polymer EO probe tip is built and demonstrated for the first time, by which the signal voltage level corresponding to the EO signal can be calibrated. Using the new probe tip, we examine the influence of the variations of the linewidth and the spacing between neighboring lines on the EO signal. The results indicate that when the vertical distance between the tested point on the lines and the reference electrode is not larger than that between the tested point and its neighboring conductor, the disturbance from circuit layout can be avoided so that the voltage calibration of EO signal can be carried out.     

Achieving Above 60% External Quantum Efficiency in Organic Light‐Emitting Devices Using ITO‐Free Low‐Index Transparent Electrode and Emitters with Preferential Horizontal Emitting Dipoles

Comprehensive theoretical and experimental studies are reported on organic light‐emitting devices (OLEDs) adopting either the conventional high‐index indium tin oxide (ITO) electrode or the low‐index conducting polymer electrode, either isotropic emitters or emitters having preferentially horizontal emitting dipoles, and different layer structures. Intriguingly, with the use of low‐index electrode in the device, in addition to the known suppression of waveguided modes, the surface plasmon modes can also be effectively suppressed with larger emitter‐to‐metal distances yet with better immunity to accompanied increase of the competing waveguided modes (induced by thicker organic layers) as in the ITO device. As a result, overall coupling efficiencies of OLED internal radiation into substrates can be significantly enhanced over those with ITO electrodes. Through effective extraction of radiation within substrates, green phosphorescent OLEDs adopting both the low‐index ITO‐free electrode and the preferentially horizontal dipole emitter (with a horizontal dipole ratio of 76%) achieve a high external quantum efficiency (EQE) of up to ≈64%. The simulation also predicts that very high EQEs of ≥80% are possible with highly horizontal dipole emitters for all red/green/blue/white OLEDs, clearly revealing the potential of combining low‐index transparent electrodes and horizontal dipole emitters for high‐efficiency OLEDs.     

具有ITO电极的QCM设计与性能研究

为了提高石英晶体微天平(QCM)的检测灵敏度,提出了一种具有氧化铟锡(ITO)电极结构的QCM。利用有限元分析软件在QCM芯片电极区采用密度等效法实现计算量的简化,在通过电极尺寸优化得到具有理想能陷效应的QCM的基础上,采用控制磁控溅射的气体压强、工作电压、电流等方法,得到具有导电性好,平滑度高,透光性优良的ITO电极。经振荡频率测试及质量灵敏度分析计算表明,ITO电极的QCM频率稳定性良好(频率变化仅3 Hz),质量灵敏度是金电极QCM的1.5倍。     

工艺参数对铍青铜微电阻点焊质量的影响

改变焊接电流、焊件表面粗糙度及电极端面直径,对铍青铜微电阻点焊进行了研究,分析了工艺参数对接头拉剪力和焊核直径的影响.结果表明:电极端面直径为3.2 mm时获得的接头性能最好.随着电极端面直径的减小,接头性能降低.表面粗糙度较小时,获得的接头性能较好, 当表面粗糙度增加到某一值后,其对接头性能的影响不明显.     

ZnO:Ga透明电极LED的制备及性能分析

基于本实验室的实验条件,采用射频磁控溅射、等离子干法刻蚀等技术成功制备出具有ZnO∶Ga(GZO)透明电极的LED芯片。实验研究了相同工艺条件制备的ITO透明电极LED芯片和GZO透明电极LED芯片,对比实验结果表明GZO薄膜沉积工艺简单,其器件性能与ITO电极LED相当。相同条件下制备的GZO薄膜可见光波段透过率约90%,而ITO仅为75%。实验室制备的LED器件均具有较高的阈值电压,一方面p-GaN与ZnO的禁带宽度相差4.13 eV,接触势垒大,另一方面器件制备过程中的等离子体损伤薄膜表面和器件性能。