Influence of Mg<Superscript>2+</Superscript>/Ga<Superscript>3+</Superscript> doping on luminescence of Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce<Superscript>3+</Superscript> phosphors

Mg²⁺/Ga³⁺ doped Y₃Al₅O₁₂:Ce³⁺ phosphors were synthesized through a solid state reaction. The phase and luminescent of the synthesized phosphors were investigated. For Ga³⁺ codoped Y_2.96Ce_0.04Al_(5?x)Ga_xO₁₂ phosphors, the emission intensity increases with the increase of Ga³⁺ concentration up to Y_2.96Ce_0.04Al_4.80Ga_0.20O₁₂ and then decreases with a further increase of Ga³⁺ concentration, but the emission peak shifts to shorter wavelength continuously in the Ga³⁺ doping concentration range of 0.05–0.25. For Mg²⁺/Ga³⁺ codoped Y_2.96Ce_0.04Al_(4.8?y)Ga_0.20Mg_yO₁₂ phosphors, the emission intensity decreases and the emission peak shifts to longer wavelength continuously in the Mg²⁺ doping concentration range of 0.02–0.12. The emission spectra of Y_2.96Ce_0.04Al_(4.8?y)Ga_0.20Mg_yO₁₂ phosphors demonstrate that the codoped Mg²⁺/Ga³⁺ ions not only induce the enhancement of Y_2.96Ce_0.04Al₅O₁₂ emission intensity but also lead to the red shift of Y_2.96Ce_0.04Al₅O₁₂ emission peak. The decay lifetimes decrease in Mg²⁺/Ga³⁺ codoped Y_2.96Ce_0.04Al₅O₁₂ phosphors due to defects formed by substitutions of Y³⁺ by Mg²⁺/Ga³⁺.     

Effect of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd₃Ga₅O₁₂ substrates from supercooled Bi₂O₃-B₂O₃ fluxed melts at different Gd₂O₃ concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi³⁺ luminescence is discussed.     

EPR and optical investigation of ultraviolet-emitting Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> garnet

Gd₃Ga₅O₁₂ garnet was prepared by a solution combustion method and characterized using powder X-ray diffraction, electron paramagnetic resonance (EPR) and optical spectroscopic techniques. EPR spectrum of the samples at ambient and low temperatures exhibited resonance signal at g?≈?2 attributed to Gd³⁺ ions disposed in an octahedral symmetry. The optical absorption spectrum showed a band centered at 274 nm attributed to ⁸S_7/2→⁶I_J transition of the Gd³⁺ ions. The excitation spectrum showed a maximum at 273 nm along with two relatively weaker peaks at 276 and 279 nm. These three excitation bands were assigned to the transitions ⁸S_7/2→⁶I_J. The emission spectrum showed two peaks centered at 311 and 306 nm that were assigned to the transitions ⁶P_7/2→⁸S_7/2 and ⁶P_5/2→⁸S_7/2 of Gd³⁺, respectively. To evaluate the phosphor performance, several magnetic and thermodynamic parameters for the system were calculated adopting standard procedure.     

Recombination processes in the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce<Superscript>3+</Superscript> scintillator

The roentgenoluminescence spectra, temperature-dependent activator luminescence, optically stimulated luminescence, and the effect of IR irradiation on the yield and spectral composition of the low-temperature roentgenoluminescence and thermoluminescence curves of the Y₃Al₅O₁₂:Ce³⁺ scintillator have been studied in the temperature range 85–295 K. The results, coupled with earlier data, suggest that the Ce³⁺ ions in the garnet crystal studied form Ce³⁺ p hole centers and increase the concentration of electronic F ^?-centers responsible for the IR stimulation band at 940 nm. The reduction in roentgenoluminescence yield on cooling Y₃Al₅O₁₂:Ce³⁺ to below 230 K is due to the significant localization of excited carriers at defects, which show up in thermoluminescence peaks and optical stimulation spectra. The low-temperature Ce³⁺ luminescence in Y₃Al₅O₁₂:Ce₃₊ seems to result from the recombination of activator-bound excitons.     

Photoluminescence and raman spectra of (Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>(Sm<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.05</Subscript> crystals

We have measured the photoluminescence and Raman spectra of (Ga₂S₃)_0.95(Sm₂O₃)_0.05 crystals and identified the mechanism of the energy transfer from the host to the rare-earth ion and the vibrational modes of the constituent atoms.     

Effect of Y<Subscript>2</Subscript>O<Subscript>3</Subscript> on the crystallization behavior of SiO<Subscript>2</Subscript>–MgO–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

A series of glass comprising of SiO₂–MgO–B₂O₃–Y₂O₃–Al₂O₃ in different mole ratio has been synthesized. The crystallization kinetics of these glasses was investigated using various characterization techniques such as differential thermal analysis (DTA), thermo gravimetric analysis (TGA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Crystallization behavior of these glasses was markedly influenced by the addition of Y₂O₃ instead of Al₂O₃. Addition of Y₂O₃ increases the transition temperature, T _g, crystallization temperature, T _c and stability of the glasses. Also, it suppresses the formation of cordierite phase, which is very prominent and detrimental in MgO-based glasses. The results are discussed on the basis of the structural and chemical role of Y³⁺ and Al³⁺ ions in the present glasses.     

Effects of gallia additions on sintering behavior of Ce<Subscript>0.8</Subscript>Gd<Subscript>0.2</Subscript>O<Subscript>1.9</Subscript> ceramics prepared by commercial powders

The densification behavior and grain growth of Ce_0.8Gd_0.2O_1.9 ceramics were investigated with the gallia concentration ranging from 0 to 10 mol%. Both the sintered density and grain size were found to increase rapidly up to 0.5 mol% Ga₂O₃, and then to decrease with further additions. Under the same sintering conditions, the samples with 3 mol% Ga₂O₃ and less exhibited a higher sintered density, as compared to the one without Ga₂O₃ addition. However, a pinning effect on grain growth was found at 2 mol% Ga₂O₃. In the dopant content range of 0 to 10 mol%, 0.5 mol% Ga₂O₃ was the optimum doping level in promoting densification and grain growth of commercially available powders of Ce_0.8Gd_0.2O_1.9.     

Cr<Superscript>3+</Superscript> activated Zn<Subscript>3</Subscript>Al<Subscript>2</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript>: a novel near-infrared long persistent phosphor

The near-infrared (NIR) long persistent phosphors have gained considerable attention owing to the potential applications in in vivo imaging. A novel NIR long-persistent phosphors Zn₃Al₂Ge₃O₁₂:Cr³⁺ was successfully synthesized by a high temperature solid-state reaction. The luminescent properties and the afterglow behaviors of the Zn₃Al₂Ge₃O₁₂:Cr³⁺ were investigated in detail. On the basis of thermoluminescence analyses, the mechanism of the persistent afterglow of the phosphors was also discussed briefly. The afterglow duration of this phosphor can last more than 12 h with the 650–750 nm emission range after stoppage of 254 nm ultraviolet light irradiation. Specifically, the persistent luminescence intensity and duration were regulated by changing Cr³⁺ doping concentration. All the results indicate that the Cr³⁺ activated Zn₃Al₂Ge₃O₁₂ has promising potential of practical applications.     

Synthesis,photoluminescence and mechanoluminescence properties of Eu<Superscript>3+</Superscript> ions activated Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> phosphors

A new series of Eu³⁺ ions-activated calcium gadolinium tungstate [Ca₂Gd₂W₃O₁₄] phosphors were synthesized by conventional solid-state reaction method. The X-ray diffraction patterns of the powder samples indicate that the Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors are of tetragonal structure. The prepared phosphors were well characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), and mechanoluminescence (ML) spectra. PL spectra of Eu³⁺: Ca₂Gd₂W₃O₁₄ powder phosphors have shown strong red emission at 615 nm (⁵D₀ → ⁷F₂) with an excitation wavelength λ _exci = 392 nm (⁷F₀ → ⁵L₆). The energy transfer from tungstate groups to europium ions has also reported. Mechanoluminescence studies of Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors have also been explained systematically.     

Morphology and luminescent properties of Al<Superscript>3+</Superscript>/Mg<Superscript>2+</Superscript>-doped Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> phosphor

Al³⁺/Mg²⁺ doped Y₂O₃:Eu phosphor was synthesized by the glycine-nitrate solution combustion method. In contrast to Y₂O₃:Eu which showed an irregular shape of agglomerated particles (the mean particle size >10 μm), the morphology of Al³⁺/Mg²⁺ doped Y₂O₃:Eu crystals was quite regular. Al³⁺/Mg²⁺ substituting Y³⁺ in Y₂O₃:Eu resulted in an obvious decrease of the particle size. Meanwhile, higher the Al³⁺/Mg²⁺ concentration, smaller the particle size. In particular, the introduction of Al³⁺ ion into Y₂O₃ lattice induced a remarkable increase of PL and CL intensity. While, for Mg²⁺ doped Y₂O₃:Eu samples, their PL and CL intensities decreased. The reason that causes the variation of PL and CL properties for Al³⁺ and Mg²⁺ doped Y₂O₃:Eu crystals was concluded to be related to sites of Al³⁺ and Mg²⁺ ions inclined to take and the difference of ion charge.     

Crystal structure of Gd<Subscript>14</Subscript>Cu<Subscript>48</Subscript>Ga<Subscript>3</Subscript> and Tb<Subscript>14</Subscript>Cu<Subscript>48</Subscript>Ga<Subscript>3</Subscript>

The compounds Gd₁₄Cu₄₈Ga₃ and Tb₁₄Cu₄₈Ga₃ have been synthesized, and their structures have been determined by powder x-ray diffraction (Gd₁₄Ag₅₁ type).     

Structural,optical, and opto-dielectric properties of W-doped Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films

A layer-by-layer deposition technique of Ga₂O₃ and WO₃ by vacuum evaporation method on glass and silicon substrates and subsequent annealing in oxygen atmosphere to form W-doped Ga₂O₃ (or Ga₂O₃:W) films was attempted here. The W doping level was measured by the energy dispersive X-ray fluorescence radiographic analysis. The crystalline structure of Ga₂O₃:W films was determined by the X-ray diffraction method. Experimental data indicate that W⁶⁺ ions doped in host Ga₂O₃ forming solid solutions (SS), in which the molar ratio (r) of W to Ga is 9.6, 13.4, 18.2, 22.7 and 30.4%. All the prepared SS have the known β-Ga₂O₃ crystalline structure. This doping controls the optical and electrical properties of the host Ga₂O₃. The optical properties of the prepared Ga₂O₃:W films were studied by UV–VIS–NIR absorption spectroscopy method from which the bandgap was determined. In general, it was found that the prepared Ga₂O₃:W films are wide-bandgap semiconductors with bandgap 4.69–4.47 eV and have dielectric properties. The optical sensitivity of the capacitance, dissipation factor and ac-conductance of the Ga₂O₃:W films grown on Si was studied as a function of W-doping level. It was observed that the prepared Ga₂O₃:W film of r = 22.7% has the highest photosensitivity amongst the other samples.     

Structural and optical characterization of RE (Eu<Superscript>2+</Superscript>, Ce<Superscript>3+</Superscript>) doped SrMg<Subscript>2</Subscript>Al<Subscript>6</Subscript>Si<Subscript>9</Subscript>O<Subscript>30</Subscript> nanocrystalline phosphor

This article present the reports on optical study of Eu²⁺ and Ce³⁺ doped SrMg₂Al₆Si₉O₃₀ phosphors, which has been synthesized by combustion method at 550 °C. Here SrMg₂Al₆Si₉O₃₀:Eu²⁺ emission band observed at 425 nm by keeping the excitation wavelength constant at 342 nm, whereas SrMg₂Al₆Si₉O₃₀:Ce³⁺ ions shows the broad emission band at 383 nm, under 321 nm excitation wavelength, both the emission bands are assigned due to 5d–4f transition respectively. Further, phase purity, morphology and crystallite size are confirmed by XRD, SEM and TEM analysis. However, the TGA analysis is carried out to know the amount of weight lost during the thermal processing. The CIE coordinates of SrMg₂Al₆Si₉O₃₀:Eu²⁺ phosphor is observed at x?=?0.160, y?=?0.102 respectively, which may be used as a blue component for NUV-WLEDs. The critical distance of energy transfer between Ce³⁺ ions and host lattice is found to be 10.65 Å.     

Synthesis,structural, photoluminescence and mechanoluminescence properties of Tb<Superscript>3+</Superscript>: Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> novel green nanophosphors

Novel green nanophosphors Ca₂Gd₂W₃O₁₄: Tb³⁺ were synthesized by solid state reaction method. From the X-ray diffraction profiles it is observed that Tb³⁺: Ca₂Gd₂W₃O₁₄ phosphors were crystallized in the form of tetragonal structure. The scanning electron microscopy (SEM) image shows that the particle size is at around 300 nm. In addition to these the prepared powder phosphors were also examined by the energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and mechanoluminescence (ML) spectra. Emission spectra of Tb³⁺: Ca₂Gd₂W₃O₁₄ nanophosphors have shown bright green emission at 545 nm (⁵D₄ → ⁷F₅) with an excitation wavelength λ_exci = 374 nm (⁷F₆ → ⁵G₆). ML spectra shows the radiation effect on the Ca₂Gd₂W₃O₁₄: Tb³⁺ nanophosphors and from that it was observed that these phosphors are very less sensitive for lower exposure.     

New,thermally stable Gd<Subscript>11</Subscript>(GeO<Subscript>4</Subscript>)(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>O<Subscript>10</Subscript>-based upconversion phosphors

A series of Gd_11–x–y Yb _x Er _y GeP₃O₂₆ germanate phosphates differing in the ratio of the Yb³⁺ and Er³⁺ active ions have been synthesized, and their luminescence spectra have been measured. According to X-ray diffraction characterization results, all of the synthesized germanate phosphates are single-phase and have a triclinic structure (sp. gr. P1). We have measured upconversion luminescence spectra due to the Er^{3+ 2}H_11/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2 radiative transitions in the synthesized gadolinium ytterbium erbium germanate phosphates and determined the luminescence upconversion energy yield (B _en) in Gd_11–x–y Yb _x Er _y GeP₃O₂₆. The effects of the concentrations and ratio of the dopants in the Gd₁₁(GeO₄)(PO₄)₃O₁₀ germanate phosphate host on B _en and the ratio of the luminescence intensities in the red and green spectral regions (R/G) have been assessed.     

Superconducting Studies of Nd<Superscript>3+</Superscript>- and Dy<Superscript>3+</Superscript>-substituted GdBaSrCu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> System

The compounds Gd_1−x Nd _x BaSrCu₃O_7−δ (where x=0, 0.1 and 0.2) and Gd_1−x Dy _x BaSrCu₃O _y (where x=0, 0.1 and 0.3) were synthesized using the solid state reaction technique. The tetragonal crystallization of the compounds was identified by powder X-ray diffraction. The microrange crystallite formation and the substitution elements present in the compounds were observed by SEM and EDX analyses. The suppression of superconducting transition temperature and the variation of magnetization parameters for the substitution of rare-earth magnetic elements Nd and Dy ions were observed by low-temperature electrical resistance and magnetization measurements.     

Photoluminescence of Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>:Sm<Superscript>2+</Superscript> crystals

The photoluminescence spectra of Ga₂S₃:Sm²⁺ crystals have been measured in a wide temperature range (77–450 K). The results have been used to identify the mechanisms of the luminescence and energy transfer from the host to the rare-earth ion.     

Synthesis and photoluminescence study of narrow-band UVB-emitting LiSr<Subscript>4</Subscript>(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>:Gd<Superscript>3+</Superscript>, Pr<Superscript>3+</Superscript> phosphor

A series of Pr³⁺, Gd³⁺ and Pr³⁺–Gd³⁺-doped inorganic borate phosphors LiSr₄(BO₃)₃ were successfully synthesized by a modified solid-state diffusion method. The crystal structures and the phase purities of samples were characterized by powder X-ray diffraction. Surface morphology of the sample was studied by scanning electronic microscopy (SEM). The optimal concentrations of dopant Gd³⁺ ions in compound LiSr₄(BO₃)₃ were determined through the measurements of photoluminescence (PL) spectra of phosphors. Gd³⁺-doped phosphors LiSr₄(BO₃)₃ show strong band absorption in UV spectral region and narrow-band UVB emission under the excitation of 276 nm was only due to ⁶P _J → ⁸S_7/2 transition of Gd³⁺ ions. The effect of Pr³⁺ ion on excitation of LiSr₄(BO₃)₃:Gd³⁺ was also studied. The excitation of LiSr₄(BO₃)₃:Gd³⁺, Pr³⁺ gives a broad-band spectra, which show very good overlap with the Hg 253.7 nm line. The photoluminescence spectra of LiSr₄(BO₃)₃ with different doping concentrations Pr³⁺ and keeping the concentration of Gd³⁺ constant at 0.03 mol have also been studied. The emission intensity of LiSr₄(BO₃)₃:Pr³⁺–Gd³⁺ phosphors increases with increasing Pr³⁺ doping concentration and reaches a maximum at 0.01 mol. From the photoluminescence study of LiSr₄(BO₃)₃:Gd³⁺, Pr³⁺ we conclude that there was efficient energy transfer from Pr³⁺→ Gd³⁺ ions in LiSr_4?x?y Pr _x Gd _y (BO₃)₃ phosphors.     

Microstructure and high-temperature strength of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Er<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>/ZrO<Subscript>2</Subscript> ternary melt growth composite

A new Al₂O₃/Er₃Al₅O₁₂(EAG)/ZrO₂ ternary MGC (Melt Growth Composite) with a novel microstructure has been fabricated by unidirectional solidification. This ternary MGC has a microstructure consisting of continuous networks of single-crystal Al₂O₃, single-crystal EAG and fine cubic-ZrO₂ phases without grain boundaries. The ternary MGC has also characteristic dimensions of the microstructure of around 2–4 m for EAG phases, around 2–4 m for Al₂O₃ phases reinforced with around 0.4–0.8 m cubic-ZrO₂ phases. No amorphous phases are formed at interfaces between phases in the ternary MGC. The ternary MGCs flexural strength at 1873 K is approximately 700 MPa, more than twice the 330 MPa of the Al₂O₃/EAG binary MGC. The fracture manner of the Al₂O₃/EAG/ZrO₂ ternary MGC at 1873 K shows the same intergranular fracture as the Al₂O₃/EAG binary MGC, but is significantly different from the transgranular fracture of the sintered ceramic.     

Synthesis,crystal structure and luminescence in Ca<Subscript>3</Subscript>Al<Subscript>2</Subscript>O<Subscript>6</Subscript>

Bluish green emitting phosphor, Ca₃Al₂O₆:Ce³⁺, is prepared by low-temperature combustion method. X-ray diffraction, photoluminescence, scanning electron microscopy techniques are used to characterize the synthesized phosphor. The most efficient bluish green (483 nm) emission is observed under the excitation by near UV light. The emission characteristics are credited to 5d → 4f type transitions in Ce³⁺. The luminescence properties of Eu²⁺ are predicted for the first time from those of Ce³⁺. Also, photoluminescence of Eu³⁺ is studied in the same host. The emission spectrum of Ca₃Al₂O₆:Eu³⁺ shows the peak at 592 (orange) and 614 nm (red) wavelengths. Ca₃Al₂O₆:Ce³⁺phosphor can be a potential blue phosphor for field emission display, solid-state lighting and LED.