The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) were characterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction (HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventional furnace annealing and rapid thermal annealing with temperature between 750℃ and 910℃. Both strain and its relaxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported in other literatures. The rapid thermal annealing at elevated temperature between 880℃ and 910℃ for very short time had almost no influence on the strain in Si0.84Ge0.16 epilayer. However, high temperature (900℃@) furnace annealing for 1h prompted the strain in Si0.84Ge0.16 layer to relax.     

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

Nanometer-thick silicon-germanium-on-insulator (SGOI) structures have been produced by the implantation of Ge⁺ ions into thermally grown SiO₂ layer and subsequent hydrogen transfer of silicon film on the Ge⁺ ion implanted substrate. The intermediate nanometer-thick Ge layer has been formed as a result of the germanium atom segregation at the Si/SiO₂ bonding interface during annealing at temperatures 800–1100 ^оС. From a thermodynamic analysis of Si/Ge/SiO₂ system, it has been suggested that the growth of the epitaxial Ge layer is provided by the formation of a molten layer at the Si/SiO₂ interface due to the Ge accumulation. The effect of germanium on the hole mobility in modulation-doped heterostructures grown over the 3–20 nm thick SGOI layers was studied. An increase in the Hall hole mobility in SGOI-based structures by a factor of 3–5 was obtained in comparison with that in respective Ge-free SOI structures.     

Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures

Si_1−xGe_x amorphous layers implanted with different doses of carbon (between 5 × 10¹⁵ and 2 × 10¹⁷ cm⁻² and annealed at 700°C and 900°C have been analyzed by Raman and Infrared spectroscopies, electron microscopy and Auger electron spectroscopy. The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest annealing temperature (900°C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the anneal temperature. For the highest dose (2 × 10¹⁷ cm⁻²), crystalline β-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs.     

Monitoring interstitial fluxes by self-assembled nanovoids in ion-implanted Si/SiGe/Si strained structures

We report on the effect of the rapid thermal annealing (RTA) ambiance on evolution of self-assembled voids of nanometer size. The spherically shaped voids are produced in molecular beam epitaxially grown Si/SiGe/Si strained structures with in-situ implantation of 1 keV Ge ions followed by RTA at 800 or 900 °C. The voids are of nanometer size and are exclusively assembled in the narrow SiGe layer. During the RTA, the voids grow in size in a nitrogen ambiance and shrink in an oxygen ambiance. The evolution of the voids correlates well with oxidation-induced injection of excess interstitials. Prospects for point defect monitoring are discussed.     

Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2

We report on the effects of annealing conditions on the photoluminescence from Si nanocrystal composites fabricated by implantation of Si ions into a SiO₂ matrix, followed by thermal treatment in a nitrogen atmosphere. The evolution of the photoluminescence under different annealing temperatures (900–1100 °C) and annealing time (0.5 up to 5 h) were systematically studied for the implanted samples. After annealing the spectra presented two photoluminescence bands: one centered at 610 nm and another around 800 nm. Combined with transmission electron microscopy, we conclude that the photoluminescence behavior of the two bands suggests different origins for their emissions. The 610 nm band has its origin related to matrix defects, while the 800 nm band can be explained by a model involving recombination via quantum confinement effects of excitons in the Si nanocrystals and the interfacial states recombination process confined in the interfacial region between nanocrystals and SiO₂ matrix.     

Cr涂层锆合金包壳模拟LOCA试验研究

2011年日本福岛核事故暴露传统锆合金燃料包壳在失水事故(LOCA)工况下的安全性问题。为了探究新型Cr涂层锆合金包壳在LOCA工况下的性能,本研究针对物理气相沉积(PVD)工艺涂覆的12～15μm厚度Cr涂层Zr-1Nb合金包壳管,开展模拟LOCA工况下的高温蒸汽氧化-淬火试验,氧化温度为1200℃和1300℃,单面氧化时间为10 min和20 min,淬火温度约800℃,之后对淬火后试样进行环压测试。结果发现,在研究条件下,Cr涂层未出现剥落,涂层完整;Cr涂层锆合金包壳外表面形成较为致密Cr₂O₃层,抑制O原子扩散至锆合金基体,阻止锆合金基体被氧化为ZrO₂层和α-Zr(O)层,环压测试发现淬火后包壳保持良好塑性。研究表明,在本测试工况下Cr涂层锆合金包壳相比传统锆合金包壳具有更强的抗LOCA事故能力。     

Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge ion implanted layers in silicon

Solid phase epitaxial growth (SPEG) of amorphous SiGe layers in Si has been investigated. The amorphous layers were formed by 40 keV ⁷⁴Ge⁺ ion implantation in Si(100) single crystals with doses giving 22 at.% Ge at the maximum of the ion implanted distribution of Ge. SPEG of the amorphous layers was achieved by either thermal SPEG or a combination of thermal SPEG and ion-beam induced crystallisation (IBIC). The crystal quality of the layers was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. Fully crystallised SiGe alloy layers were obtained by annealing in a furnace at 550°C for 60 min or at 850°C for 20 min. However, the SiGe alloy layers contain extended defects formed at the relaxation of the built-in strain in the alloy layer. When the combination of thermal SPEG and IBIC was used for the SPEG very few of these defects were formed.     

模拟高放玻璃固化体的析晶行为

在高放废物玻璃熔制过程中,高放废物罐中心区域玻璃长时间处于高温状态,发生析晶现象。析晶增加了高放玻璃固化体的相界面,改变了其物理性质和化学性质。为了避免析晶的发生,必须研究高放玻璃固化体的析晶行为。本工作采用恒温热处理方式,研究模拟高放玻璃固化体的析晶行为。将模拟高放玻璃粉末分别在500、600、700、800、900℃下进行了0.5~96h的热处理。采用X射线衍射法(XRD)检测热处理后样品的结晶度和晶相。XRD测试结果表明:模拟高放玻璃固化体的最大结晶度析晶温度在700℃左右;热处理后产生了三类晶相辉石、斜长石和方铈矿,辉石出现在600~900℃,为主要晶相,方铈矿出现在700~900℃,斜长石只出现在700℃。     

铍的高温氧化行为及特性研究

在不同温度下对金属铍（Be）进行热氧化,采用热重、AES和SEM对Be的热氧化过程、氧化后表面状态、微区成分和氧化层厚度进行表征和分析,探讨了不同温度下Be的氧化行为和氧化特性。结果表明：室温～400 ℃范围内,Be样品的氧化增重主要服从抛物线规律;400～900 ℃范围内,主要呈线性变化。在较低温度下,Be表面形成的钝化层具有良好的保护作用,比较耐蚀。高温对Be样品的氧化影响较大,认为600 ℃以下Be的氧化主要受Be原子向表面的热扩散控制;800 ℃以上,氧通过晶界和孔洞扩散进入材料体内、氧化膜受热膨胀以及应力作用开裂等,导致Be发生严重的氧化腐蚀。     

掺Pb超导体（Bi2—xPbx）Ca2.5Nd0.5Cu2O8＋y的正电子寿命研究

室温测量了（Ｂｉ２－ｘＰｂｘ）Ｃａ２．５Ｎｄ０．５Ｃｕ２Ｏ８＋ｙ超导体的正电子寿命与Ｐｂ含量的关系。在２２１２相发现随着Ｐｄ含量的增加正电子体寿命相应地减小，分析表明，这是由于Ｐｂ替换了Ｂｉ，使电子从Ｃｕ－Ｏ面或其它晶位迁移到Ｂｉ－Ｏ层，并导致Ｂｉ－Ｏ层电子密度增加所致。     

Diffusion and strain relaxation in Si/Si1−xGex/Si structures studied with Rutherford backscattering spectrometry

The thermal stability of strained Si/Si_1−xGe_x/Si structures grown by molecular beam epitaxy was investigated by resistive heating and in situ Rutherford backscattering spectrometry. Ge profiles obtained from a 50 nm Si_1−xGe_x layer on a Si(100) substrate capped with 50 nm Si were evaluated for different Ge concentrations after sequential heating periods at a particular temperature between 850 and 1010° C. The diffusion coefficients, calculated from the increase in signal in the tail of the Ge profile, proved to be comparable to the value for Ge in bulk Si. A more pronounced decrease of the signal at the center of the Ge profile indicated a faster diffusion within the SiGe layer which was confirmed by analysis of the FWHM of the Ge profile. Ion channeling measurements were used to characterize tetragonal strain in the buried SiGe layers. Angular scans through the 111 direction were interpreted with Monte Carlo channeling calculations and used to study strain relaxation in dislocation-free and partially relaxed layers.     

EXPERIMENTS OF MeV ION BEAM INDUCED ATOMIC MIXING

An experimental apparatus for studies of MeV ion beam modification of materials has been established on a 3 MV tandem accelerator at Fudan university. A system of X-Y electrostatic scanning implantation of MeV heavy ions and in situ Rutherford. backscattering analysis was included in it. The uniformity of scanning implantation was checked by the RBS measurement of a Si wafer implanted with 1 MeV Au ions. MeV ion beam mixing of Au/Si, Au/Ge and Ag/Si systems was preliminarily studied. The samples were irradiated by certain fluences of 1 MeV Ag ions at room temperature. The mixed layers were analyzed in situ using the glancing RBS technique with 2 MeV 4He+ ions. For Au/Si system, a uniformly mixed layer with a defined composition is obtained, and the intermixing is much less for Ag/Si system than for Au/Si system.     

2 MeV Si ion implantation damage in relaxed Si1−xGex

The damage produced by implanting, at room temperature, 3 μm thick relaxed Si_1−xGe_x layers with 2 MeV Si⁺ ions has been measured as a function of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 10¹⁰–10¹⁵ cm⁻². The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si_1−xGe_x with increasing x is observed. The characteristics of implantation-induced defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe.     

模拟高放玻璃体在高温湿气中的蚀变行为

模拟地下水穿透地质处置多重屏障情形下，地下水会以高温蒸气的形式与高放玻璃体发生反应，加速玻璃体的蚀变。采用纯水和特定的盐溶液作为浸泡剂以控制体系的相对湿度分别在100%和90%左右。模拟高放玻璃体样片用聚四氟乙烯线悬挂在浸泡剂上方并在低氧箱中平衡，分别在120 ℃和150 ℃的干燥箱内反应。通过测试浸泡液中各元素的浓度和分析玻璃体表面的腐蚀产物，以表征玻璃的蚀变速率。实验发现，温度对玻璃腐蚀的影响最为明显，湿度的影响较弱。玻璃体中大多数元素在150 ℃下的浸出速率高于120 ℃下的浸出速率2～3个数量级。90 d时，玻璃体在150 ℃下已观察到显著的腐蚀。900 d后，150 ℃下玻璃体已基本完全腐蚀；而在120 ℃下的玻璃腐蚀程度很小，900 d时腐蚀厚度仍小于50 μm。150 ℃时随着腐蚀的发生，玻璃表面的SiO2腐蚀层逐渐形成以钙的硅酸盐为主的二次矿相。     

模拟高放玻璃体在高温湿气中的蚀变行为

模拟地下水穿透地质处置多重屏障情形下，地下水会以高温蒸气的形式与高放玻璃体发生反应，加速玻璃体的蚀变。采用纯水和特定的盐溶液作为浸泡剂以控制体系的相对湿度分别在100%和90%左右。模拟高放玻璃体样片用聚四氟乙烯线悬挂在浸泡剂上方并在低氧箱中平衡，分别在120 ℃和150 ℃的干燥箱内反应。通过测试浸泡液中各元素的浓度和分析玻璃体表面的腐蚀产物，以表征玻璃的蚀变速率。实验发现，温度对玻璃腐蚀的影响最为明显，湿度的影响较弱。玻璃体中大多数元素在150 ℃下的浸出速率高于120 ℃下的浸出速率2～3个数量级。90 d时，玻璃体在150 ℃下已观察到显著的腐蚀。900 d后，150 ℃下玻璃体已基本完全腐蚀；而在120 ℃下的玻璃腐蚀程度很小，900 d时腐蚀厚度仍小于50 μm。150 ℃时随着腐蚀的发生，玻璃表面的SiO2腐蚀层逐渐形成以钙的硅酸盐为主的二次矿相。     

Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers

The occurrence of O₂ molecular loss from the bulk of SiO₂ single layers and SiO₂/Si multilayers as a result of 50 MeV Cu⁹⁺ irradiation has been investigated. This process did not take place with a significant rate, if it occurs at all. Instead both Si and O are removed from the SiO₂ surface region, releasing molecular O₂. If an elemental Si layer is on top in a multilayer, removal of Si and O with an appreciable rate is not observed. The irradiation creates bubbles in the SiO₂/Si multilayers, which contain O₂. The distinct SiO₂ sublayers remain chemically intact. The bubbles deteriorate the depth resolution in elastic recoil detection.     

Investigation of Radiation Effects and Hardening Procedures for CMOS/SOS

Ionizing radiation effects and hardening procedures have been investigated using simple CMOS/SOS circuits fabricated with SiO2 gate insulators. A modified gate oxidation process using steam and HCl has resulted in improved gate oxide hardness -- with threshold voltage shifts of less than two volts up to a total dose of 106 rads(Si). Radiation-induced n-channel leakage currents were reduced by more than two orders of magnitude by using a deep boron ion implant and appropriate process ing techniques. Post-irradiation values of less than 0.5?A/mil have been obtained using this procedure. Studies of charge buildup at the silicon-sapphire interface indicate an effective positive charge in the range of 1011 cm-2 to 1012 cm-2 - peaking at a total dose of about 105 rads (Si). This effective charge decreases for increasing doses above 5×105 rads(Si). The decrease is attributed to radiation-induced interface states.     

Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti－Si system

Annealing behavior,at different annealing temperatures,of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of surface of a Ti film was investigated by Rutherford backscattering spectrometry(RBS), cross-sectional transmission electron microscopy(TEM) and energy dispersive X-ray spectrometry(EDS),In a Ti/Mo/Si structure,partially reacted film with layer structure of Ti-rich silicide/TiSi2/(Mo,Ti) Si2 on a Si substrate was formed after 550℃ annealing for 30min.The ratio of Mo to Ti in(Mo,Ti)Si2 layer decreases from near Si substrate upwards and becomes zero at about 20nm away.In a Mo/Ti/Si structure, The surface Mo layer enhances the Si diffusion from the substrate during annealing.Mo bearing Ti rich silicide exists on the surface until 600℃ and then converts to (Mo,Ti )Si2 after 650℃ annealing,and the atomic ratio of Mo to Ti decreases from the top surface into Ti silicide film,and becomes zero at about 30nm away from the surface.In both cases of interface Mo and surface Mo layer,thd atomic ratio of Mo to Ti in the region of (Mo,Ti)Si2 was found to be very low,with an average value of less than 0.2.Low content of Mo in Mo containing ternary silicide leads easily to the formation of the stable phase of C54(Mo,Ti)Si2,which acts as a template for the formation of C54 TiSi2 beneath when Mo is deposited on the surface.     

Analysis of porous silicon

Porous silicon, suitable after oxidation for dielectric isolation, has been produced successfully by anodizing silicon in strong HF. The oxidized layer has been shown to have promise in device manufacture, providing high packing densities and radiation hardness. Anodizing has been carried out using both single and double cells, following the effects of current density. HF concentration and silicon resistivity. The resultant porous layers have been characterised with respect to composition and structure. The materials produced differ considerably in lattice strain, composition and reactivities. Prompt radiation analyses ¹⁹F(p,αγ), ¹⁶O(d,α), ¹²C(d,p), are useful for monitoring the anodizing procedures and subsequent oxidation: currently, interest centres on the mechanistic information obtained. RBS analysis using α-particles gives a much lower Si response from porous than from bulk silicon. Glancing angle proton recoil analyses reveal considerable quantities of hydrogen in the porous layers. These mutually consistent findings have considerable mechanistic significance; extensive Si-H bonding occurs following a 2 equivalent Faradaic process.     

PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY

Progres in ion beam analysis at Fudan University in the recent years is briefly reviewed. Presented as examples of the research activities performed in this field are the following projects: (1) Nuclear potential resonance scattering of 6.25 MeV and 4.25 MeV helium ions for simultaneous compositional analysis of carbon and oxygen in a Mylar, a SnInO, and some other film samples: (2) Determination of stoichiometry of a high-temperature superconducting Y-Ba-Cu-O sample by backscattering of 8.8 MeV helium ions; (3) Backscattering and channeling analysis of multilayered structures periodically consisting of layers of pure Si and alternate layers of Ge and Si, grown on (100) Si substrates by molecular beam epitaxy: (4) Studies of surface structure of Al(100) by the use of MeV ions backscattering and channeling surface peak: and (5) MeV ion microbeam analysis and the use of PIXE method in DNA study. etc.