基于ARM7的全彩有机电致发光器件显示系统

以ARM7芯片LPC2138为微控制器,设计了基于间接控制接口技术的全彩OLED驱动控制电路.LPC2138通过向驱动控制器SSD1355U4提供数据信号和控制信号,从而实现全彩无源OLED屏的65 k色显示,分辨率为128×128.文章主要从硬件接口设计以及驱动程序两方面详细介绍了如何实现OLED屏全彩图片显示.     

单片机控制OLED显示全彩色静态图片和动态图像的系统设计

根据有机发光二极管器件(OLED)的特性,利用单片机C8051F020和驱动芯片SSD1332,设计OLED的控制显示电路。从组成框图、硬件设计以及软件流程等几方面介绍了该OLED的驱动电路,给出了硬件接口电路图。利用该电路系统可以实现全彩色静态图片和动态图像显示,通过软件方式实现了产生动画和动画显示。在静态图片显示中,显示频率可以达到26.3Hz;在动态图像显示中,显示频率可以达到14.5Hz。利用单片机控制OLED的显示,可大大降低OLED彩色显示的成本,优化了OLED显示器件的驱动电路。     

基于单片机的全彩OLED静态显示驱动接口电路

针对奇晶公司生产的CMEL CO283QGLD-T型OLED显示模块的特性,以宏晶科技的STC11L60XE单片机为主控制器,进行OLED显示模块与单片机在SPI模式下的硬件接口设计和软件设计,并实现了分辨率为240×320的全彩图片静态显示。所设计的OLED驱动电路具有通用性,且可显示多种测试图片用于中小尺寸OLED的显示性能测试和评定。     

OLED显示驱动技术新进展

对OLED显示驱动技术的专利申请情况进行了分析,并针对该领域的主要申请人近年来的技术研发重点进行了介绍,从而有助于了解OLED显示驱动技术的最新进展.研究表明,目前OLED显示驱动技术的改进主要集中在提高图像显示效果、降低功耗、提高显示面板寿命等方面.     

基于OLED灰度显示的新方法

介绍了有机发光二极管(OLED)技术特点、彩色实现方式和驱动方式.针对OLED灰度显示,介绍了实现灰度显示的两种常用方法即脉宽调制和帧灰度调制,并分析了各自的特点.在此基础上,尝试了一种新的方法,将二者结合起来共同实现灰度显示.这种方法不仅可以保持脉宽调制灰度显示的高速度,还可以保持帧灰度方式的均匀、稳定和足够的响应速度,而且可以大大提高灰度级别数.介绍了利用这种新方法实现OLED灰度显示数据的具体方式,该方法在硬件实现上简单易行,节约面积成本.     

基于单片机的全彩OLED驱动控制电路

根据有机电致发光显示器件(OLED)的特性,以Philips单片机P89C51RD2为核心,集成了OLED驱动控制器SSD1338U2和外围电路,设计了一种OLED驱动控制电路。从系统硬件接口设计以及系统软件流程等方面介绍了该OLED驱动电路,结合硬件接口原理图,实现了分辨率为128×128、65 k色的全彩色图片显示。     

有机电致发光器件封装技术的研究进展

有机电致发光显示器件(OLED)被认为是最有潜力的平板显示器件之一.由于OLED具有低驱动电压、高亮度、宽视角及超薄等优点,逐渐成为各国研究的热点.OLED对水分和氧气都非常敏感,进入到器件内部的水分和氧气会严重影响器件的寿命,因而影响OLED的产业化发展.OLED器件的有效封装能延长器件的寿命.综述了玻璃衬底、柔性衬底OLED封装技术的研究现状,以及不同封装的优缺点.     

高灰度级彩色OLED驱动电路的研究

介绍了OLED显示技术及相关市场信息，讨论了当前OLED的驱动技术、芯片和存在的问题，提出OLED高灰度级扫描实现方法和驱动芯片的设计，并进行了系统测试与验证。     

一种驱动MOS管工作在饱和区的硅基OLED微显示像素电路

硅基OLED微显示中为了在极小的像素面积内实现微小的OLED工作电流,其像素驱动电路的驱动MOS管一般工作在亚阈值区,存在OLED电流对驱动MOS管的阈值电压和栅源电压失配敏感、外围电路复杂等问题,如果驱动MOS管工作在饱和区则可避免这些问题,但为了获得微小的驱动电流,必须采用尺寸大的倒比MOS管,这又与极小的像素面积冲突。本文提出了一种采用脉宽调制(PWM)技术、驱动MOS管工作在饱和区的OLED微显示像素驱动电路,PWM信号减少了一帧内OLED的实际工作时间,OLED的脉冲电流变大,使驱动MOS倒比管的尺寸减小;由于PWM信号占空比小,同时实现了OLED微小的平均像素驱动电流和亮度。结果表明PWM信号占空比为3%时,实现的OLED驱动电流和像素亮度范围分别为27pA~2.635nA、2.19~225.1cd/m~2,同时采用双像素版图共用技术,在15μm×15μm的像素面积内实现了像素驱动电路的版图设计。     

PM-OLED屏视频显示系统设计

针对有机电致发光(OLED)器件在个人多媒体系统中的应用,提出一种小尺寸OLED屏视频显示的驱动方法.系统基于FPGA器件,使用硬件描述语言设计了显示控制电路.视频显示系统从DVI接口获取图像数据,经过图像缩放之后,驱动160×128点阵彩色PM-OLED屏幕,显示动态视频图像.详细分析了显示系统的工作过程以及各个模块的作用,重点介绍了视频图像缩放模块的工作原理.试验结果表明,基于FPGA设计的视频显示控制器,能够输出理想的控制信号时序,实现对OLED屏的显示控制.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.