A New Method to Extract Noise Parameters Based on a Frequency- and Time-Domain Analysis of Noise Power Measurements

A new on-wafer noise parameter measurement method at a 2.8-18-GHz frequency band is presented. This measurement method is based on both temporal and spectral analysis of noise power measurements. We present the method and the experimental results on an active two-port. It requires less equipment than the classic noise parameter measurement method. It gives direct results for 801 points in the 2.8-18-GHz frequency band.     

Experimental study of phase noise in FBAR resonators

Phase noise of micromachined bulk acoustic wave resonators is investigated. A measurement bench, able to characterize the phase noise of a single resonator on-wafer, is set up. The experimental data demonstrate the existence of a 1/f phase noise component, the amplitude of which is strongly dependent on the resonator geometry. Particularly, the apodized resonators have shown the best phase noise performance, with no degradation of the Q factor.     

Novel Noise Parameter Determination for On-Wafer Microwave Noise Measurements

A novel method to determine the noise parameters of receivers or devices under test (DUTs) for on-wafer microwave noise measurements is presented. An iterative technique is utilized, and fast convergence is achieved by the proposed impedance selection principle. This proposed method reduces the parameter variations in the conventional methods. The impact of the impedance difference on noise parameter determination is experimentally evaluated using a DUT fabricated in a standard 90-nm CMOS technology.     

Determination of HEMT's noise parameters versus temperature usingtwo measurement methods

A simplified approach for the determination of the noise parameters of high electron-mobility transistors (HEMT's) at microwave frequencies has already been presented for devices tested at room temperature. Such method relies on the extraction of a noisy circuit model from measurements of the scattering parameters and the noise figure at the fixed source impedance of 50 Ω (namely, F₅₀ ). The noise parameters of the device are then computed by model simulation. They exhibited a very good agreement with the noise parameters determined by the experimental procedure. In the present work, commercial pseudomorphic HEMT'S have been characterized at different temperatures in the 6 GHz to 18 GHz frequency range for validating the use of a further simplified procedure. We here show how to determine the complete noise performance of the devices from a very reduced set of measurements, i.e., the scattering parameters at each selected temperature and the F₅₀ noise figure at room temperature. The computed noise parameters are compared with those determined by application of the measurement procedure. The results show that the very simplified method can be employed with a good degree of accuracy whenever rapid noise testing of HEMT's versus temperature is needed     

偏相干分析在风洞噪声源识别中的应用

噪声源识别对噪声控制具有重要意义。在建立多输入/单输出系统噪声模型,分析介绍噪声源贡献量测量及偏相干分析技术的基础上,给出偏相干函数的条件谱计算公式。针对0.55 m×0.4 m航空声学风洞,拟定噪声测试方案。结合噪声测试数据,表明风洞主要噪声源识别的有效性。     

Wideband on-wafer noise measurement setup for noisecharacterization of active devices in the low VHF band

This paper addresses a new wideband on-wafer measurement test set designed for noise characterization of microwave active devices over the frequency range of 300 kHz to 150 MHz. Noise parameters obtained from the multiple impedance technique on a GaAlAs/GaAs heterojunction bipolar transistor (HBT) from 300 kHz to 70 MHz are reported and compared with low-frequency noise data. Investigation of the excess noise sources of III-V HBT's is performed well above the 100 kHz frequency limit of standard dynamic signal analyzers and noise modeling of these devices is reported     

15-term self-calibration methods for the error-correction ofon-wafer measurements

An improved method of network analyzer calibration is described using the 15-term full model which includes all leakage errors between on-wafer probe tips. This model is well suited to eliminate measurement errors of network analyzer measurements on the wafer. All procedures presented are so-called self-calibration methods, allowing for standards that are not completely known. This allows one to create calibration standards in an easy way and to monitor the calibration process. Simple and robust closed-form equations are presented for all procedures. All procedures can be derived from the general method MURN (match, unknown, reflect, network). The MORN (match, open, reflect, network) is presented, which is particular interesting for on-wafer-measurements. Furthermore, the TMRN (through, match, reflect, network) procedure presented is especially designed for coaxial measurement problems. Experimental results of the TMRN method attest to the very good accuracy and viability of the 15-term self-calibration procedures and can be compared with other 15-term procedures     

Suppression of phase-noise interference due to closely spaced data and calibration signals

At high frequencies, phase noise, which occurs at frequencies surrounding a data frequency, may seriously interfere with the measurement of nearby signals. Our motivation for removing phase noise was based on our use of simultaneous data and calibration signals, which were closely spaced in frequency. We found that by measuring the source phase noise, we are able to effectively remove phase-noise interference from the measured data and calibration signals. In order to accomplish this phase-noise suppression, a normalization procedure has been developed so that signals on differing measurement channels can be compared. Using this phase-noise suppression procedure and a prototype measurement system, we were able to improve magnitude measurements by 36 dB. We were able to improve phase measurements by a factor of 70. We propose that this procedure can significantly improve measurement accuracy in many situations where two closely spaced signals, which have a common source, must be measured with high accuracy. This procedure can also be used to monitor, and thereby remove, other types of interference besides just phase noise.     

用于芯片电容精确测量的在片开路方法研究

为实现芯片电容参数测量过程中的有效开路,提高在片电容测量的准确性及一致性,针对在片电容开路方法开展了研究工作。通过对标准电容器及开路器原理结构进行分析,结合半导体芯片工艺测试实际需求,设计并制作了在片开路器。在完成在片电容测试系统搭建基础上,分别利用传统悬空开路法和在片开路法对1pF量值的在片电容进行了测量。实验数据显示,同悬空开路法相比,在片开路法电容测量结果的准确性及一致性有显著提升,测量重复性可达0.01%,为芯片电容计量测试工作提供了有效开路手段。     

A cost-effective technique for extending the low-frequency range ofa microwave noise parameter test set

The operating frequency range of an on-wafer noise parameter test set based on the multiple-impedance technique has been extended in the low-microwave frequency range (down to the L-band). A simple technique, using a phase shifter cascaded with the microwave tuner, allows different reflection coefficients of the load impedance to be obtained at the device input. These coefficients are well distributed over the Smith chart in the entire frequency range. As an example, noise parameters of a passive device have been measured between 1 and 8 GHz, and a good agreement between measured and calculated values is observed. This technique has also been used to measure the noise parameters of different heterojunction bipolar transistors. A minimum noise figure of 1 dB was obtained at 1 GHz on a GaAlAs/GaAs HBT which is in agreement with expected results     

Maximum-Likelihood Data Fusion of Phase-Difference and Threshold-Detection Techniques for Wind-Speed Measurement

Analyses of threshold-detection and phase-difference techniques for wind-speed measurement using ultrasonic transducers are presented. The influence of uncertainties that are associated with additive noise and attenuation of the ultrasonic signal on the wind-speed measurement uncertainty is analyzed. A data-fusion procedure based on the maximum-likelihood estimation (MLE) algorithm is developed for the determination of wind speed, with data gathered through threshold-detection and phase-difference techniques. The data-fusion procedure provides a lower measurement uncertainty than those obtained with the above techniques when taken separately. Practical design issues are considered, and an application example is shown to illustrate the proposed procedure.      

汽车噪声源识别实验研究

声强测试分析方法是一种有效的噪声源识别和声场分析方法。依据声强法的原理,对某型汽车的车外辐射噪声进行声强测试,并在此基础上对该车的主要噪声源进行识别和研究,为降低该型汽车的表面辐射噪声提供有效的参考依据。     

Calculation of the radiation power absorbed by a photodiode from its experimental current-voltage characteristics

The effect of measurement errors in the current-voltage characteristics on the accuracy with which the radiation power q absorbed by the photodiode is determined is investigated theoretically. A procedure for measuring the current-voltage characteristic using exponential averaging is proposed, which enables experimental curves to be obtained that are uniform with respect to the measurement of the noise. Statistical distributions of the quantity q are presented from which the systematic and random errors due to the measurement noise are determined.     

一种在片薄膜铂电阻温度传感器的校准方法

在片薄膜铂电阻温度传感器以铂作为感温薄膜,采用半导体工艺制造,可以有效地监测晶圆片上的半导体器件温度。为了校准该类型温度传感器,根据其工作原理和结构特点,参考JJG 229-2010对校准装置的要求,提出了一种利用高低温探针台、八位半数字多用表以及直流探针组建校准装置的方法;通过组建校准装置,测量温度传感器在不同温度下的电阻值,得到电阻-温度特性的分度表;并对在片薄膜铂电阻温度传感器在25℃和125℃2个温度点进行校准。校准数据及校准结果验证表明,该方法切实可行,可有效解决无连接引线的在片铂薄膜电阻温度传感器的校准问题。该校准技术也可为其他类型感温元件的在片温度传感器校准提供参考依据。     

10GΩ在片高值电阻溯源实验

为解决在片高值电阻参数的溯源问题,组建了一套可溯源的在片高值电阻测量系统,并提出针对该系统的量值溯源方案,实现了在片高值电阻到常规同轴形式标准高值电阻的溯源。组件的测量系统通过额外的探针和线缆将同轴形式的标准电阻器接口延伸至探针末端,使用在片直通对接线将对应探针短接,形成同轴-在片-同轴形式的测量回路,从而将在片测量值与同轴端测量值联系起来,同时给出了保守的不确定度评估方法。使用组建的测量系统进行在片高值电阻溯源实验,实验数据显示在10GΩ点的相对扩展不确定度为0.3%(k=2)。     

Instrumental noise effect in an optical heterodyne profiler

An optical heterodyne profiler has been developed for measuring surface roughness at Brookhaven National Laboratory. The height measurement sensitivity and lateral resolution are 1.1 ? and 4 μm, respectively, when a 40× objective is used. A Zeeman-split He-Ne laser is the light source. A noncontact measurement system is designed as an optical common-path interferometer. Optical and electronic common-mode rejection techniques are employed to minimize the effects of environmental conditions. The effect of the system noise is analyzed in detail. The effect of varying the number of samples at each sampling point is shown. The comparisons of the system noises with different objectives, 5×, 10×, 20×, and 40×, are presented.     

Estimation of the shape of magnetic transitions by a deconvolution technique

The measurement of magnetic transitions in a digital recording system through the application of digital signal processing is presented. The observability of the magnetization waveform in the presence of uncertainties in the readback parameters of the head is discussed. The effect of noise on the deconvolution process and algorithmic techniques for minimizing the resulting measurement errors are outlined. Finally the measurement is demonstrated for an experimental head/disk system. A procedure for inferring the dead layer depth in a Mn-Zn head is discussed and the measuredM(x)is compared with some popular models.     

110 GHz可溯源的On-wafer GaAs基Multi-TRL校准标准件研制

设计制作了用于1 ~110 GHz On-wafer 散射参数测试系统自校准的GaAs基Multi-TRL校准标准件。主要验证了Multi-TRL校准标准件设计的正确性;经过与国外计量标准及商用校准件比对,还验证了在频率范围1 GHz~110 GHz,用于Multi-TRL校准的校准标准件的准确性。     

A novel noise figure and gain test set for microwave devices

A new instrument for the measurement of noise and gain of microwave devices is presented. It differs from the commercial ones in the accomplishment of the gain measurement and is also useful for measuring mismatched devices such as transistors, The instrument is driven via HP-IB by a PC and a user-friendly virtual panel is designed to perform all the required operations. Also included is the possibility of removing the second-stage noise contribution and correcting various sources of error (source ENR variations, temperature variations, etc.). The test set provides a very good accuracy for both matched and mismatched devices, usually limited by source ENR accuracy and step attenuator repeatability. The performances of the instrument are compared with those offered by commercial instrumentation     

On-wafer calibration of a double six-port reflectometer includingconstants for absolute power measurements

The complete calibration of a double six-port network analyzer includes constants for the measurement of wave ratios (S-parameters) as well as constants for absolute power level measurements for nonlinear device characterization. This paper describes how a complete set of constants can be obtained for on-wafer measurements from a complete calibration in a coaxial measurement plane and a subsequent on-wafer calibration with the minimum number of elements