Graphene Oxide,Highly Reduced Graphene Oxide,and Graphene: Versatile Building Blocks for Carbon‐Based Materials

Isolated graphene, a nanometer‐thick two‐dimensional analog of fullerenes and carbon nanotubes, has recently sparked great excitement in the scientific community given its excellent mechanical and electronic properties. Particularly attractive is the availability of bulk quantities of graphene as both colloidal dispersions and powders, which enables the facile fabrication of many carbon‐based materials. The fact that such large amounts of graphene are most easily produced via the reduction of graphene oxide—oxygenated graphene sheets covered with epoxy, hydroxyl, and carboxyl groups—offers tremendous opportunities for access to functionalized graphene‐based materials. Both graphene oxide and graphene can be processed into a wide variety of novel materials with distinctly different morphological features, where the carbonaceous nanosheets can serve as either the sole component, as in papers and thin films, or as fillers in polymer and/or inorganic nanocomposites. This Review summarizes techniques for preparing such advanced materials via stable graphene oxide, highly reduced graphene oxide, and graphene dispersions in aqueous and organic media. The excellent mechanical and electronic properties of the resulting materials are highlighted with a forward outlook on their applications.     

Electrochemical Deposition of ZnO Nanorods on Transparent Reduced Graphene Oxide Electrodes for Hybrid Solar Cells

Monocrystalline ZnO nanorods (NRs) with high donor concentration are electrochemically deposited on highly conductive reduced graphene oxide (rGO) films on quartz. The film thickness, optical transmittance, sheet resistance, and roughness of rGO films are systematically studied. The obtained ZnO NRs on rGO films are characterized by X‐ray diffraction, transmission electron microscopy, photoluminescence, and Raman spectra. As a proof‐of‐concept application, the obtained ZnO NRs on rGO are used to fabricate inorganic–organic hybrid solar cells with layered structure of quartz/rGO/ZnO NR/poly(3‐hexylthiophene)/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (P3HT/PEDOT:PSS)/Au. The observed power conversion efficiency (PCE, η), ≈ 0.31%, is higher than that reported in previous solar cells by using graphene films as electrodes. These results clearly demonstrate that rGO films with a higher conductivity have a smaller work function and show a better performance in the fabricated solar cells.     

Conjugated‐Polyelectrolyte‐Functionalized Reduced Graphene Oxide with Excellent Solubility and Stability in Polar Solvents

Conjugated‐polyelectrolyte (CPE)‐functionalized reduced graphene oxide (rGO) sheets are synthesized for the first time by taking advantage of a specially designed CPE, PFVSO₃, with a planar backbone and charged sulfonate and oligo(ethylene glycol) side chains to assist the hydrazine‐mediated reduction of graphene oxide (GO) in aqueous solution. The resulting CPE‐functionalized rGO (PFVSO₃‐rGO) shows excellent solubility and stability in a variety of polar solvents, including water, ethanol, methanol, dimethyl sulfoxide, and dimethyl formamide. The morphology of PFVSO₃‐rGO is studied by atomic force microscopy, X‐ray diffraction, and transmission electron microscopy, which reveal a sandwich‐like nanostructure. Within this nanostructure, the backbones of PFVSO₃ stack onto the basal plane of rGO sheets via strong π–π interactions, while the charged hydrophilic side chains of PFVSO₃ prevent the rGO sheets from aggregating via electrostatic and steric repulsions, thus leading to the solubility and stability of PFVSO₃‐rGO in polar solvents. Optoelectronic studies show that the presence of PFVSO₃ within rGO induces photoinduced charge transfer and p‐doping of rGO. As a result, the electrical conductivity of PFVSO₃‐rGO is not only much better than that of GO, but also than that of the unmodified rGO.     

Preparation of MoS2‐Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

A facile method for exfoliation and dispersion of molybdenum disulfide (MoS₂) with the aid of polyvinylpyrrolidone (PVP) is proposed. The resultant PVP‐coated MoS₂ nanosheets, i.e., MoS₂‐PVP nanocomposites, are well dispersed in the low‐boiling ethanol solvent, facilitating their thin film preparation and the device fabrication by solution processing technique. As a proof of concept, a flexible memory diode with the configuration of reduced graphene oxide (rGO)/MoS₂‐PVP/Al exhibited a typical bistable electrical switching and nonvolatile rewritable memory effect with the function of flash. These experimental results prove that the electrical transition is due to the charge trapping and detrapping behavior of MoS₂ in the PVP dielectric material. This study paves a way of employing two‐dimensional nanomaterials as both functional materials and conducting electrodes for the future flexible data storage.     

Enhanced Dielectric Performance in Polymer Composite Films with Carbon Nanotube‐Reduced Graphene Oxide Hybrid Filler

The electrical conductivity and the specific surface area of conductive fillers in conductor‐insulator composite films can drastically improve the dielectric performance of those films through changing their polarization density by interfacial polarization. We have made a polymer composite film with a hybrid conductive filler material made of carbon nanotubes grown onto reduced graphene oxide platelets (rG‐O/CNT). We report the effect of the rG‐O/CNT hybrid filler on the dielectric performance of the composite film. The composite film had a dielectric constant of 32 with a dielectric loss of 0.051 at 0.062 wt% rG‐O/CNT filler and 100 Hz, while the neat polymer film gave a dielectric constant of 15 with a dielectric loss of 0.036. This is attributed to the increased electrical conductivity and specific surface area of the rG‐O/CNT hybrid filler, which results in an increase in interfacial polarization density between the hybrid filler and the polymer.