添加Mn对激光制备Al1.3FeCoNiCuCr涂层组织和性能的影响

通过预置法实现在921A钢上激光熔覆制备高熵合金Al1.3FeCoNiCuCr涂层, 研究了以Mn为杂质元素时, 不同添加量对高熵合金组织、相结构和性能的影响。结果表明, 单纯Al1.3FeCoNiCuCr微观组织为简单的枝晶组织, 涂层仅由bcc相和fcc相组成, 没有金属间化合物。随着Mn的增加, Al、Ni和Cu的含量相应提高, Fe和Cr的含量则逐渐降低, 总体趋向于更加接近设计的成分;和所有其它元素不同之处是, Al明显偏析于枝晶内。XRD分析发现, bcc相的相对强度随Mn的增加而下降, 当Mn添加量达到w(Mn)＝3%时, bcc相基本消失。此外, Al1.3FeCoNiCuCr涂层显微硬度随着Mn含量的增加小幅降低, 当Mn添加量由0增加到w(Mn)＝4%时, 其平均显微硬度由HV0.2 581逐渐降低到HV0.2 547。     

激光熔覆制备CrNiAlCoMoBx系高熵合金涂层的组织与性能研究

为了拓展激光熔覆制备高熵合金涂层在材料表面改性中的应用, 本文利用激光熔覆的方法在45#钢基体上制备了成形质量良好的CrNiAlCoMoBx系高熵合金涂层, 并研究了激光熔覆工艺参数和B含量对涂层成形质量、微观组织结构和硬度的影响。结果表明: 在优化的工艺参数下, 可以得到表面形貌良好的CrNiAlCoMoBx系高熵合金涂层, 涂层与基体呈良好的冶金结合, 涂层由枝晶和网状共晶组织组成, 均匀致密, 最高硬度达到950 HV0.2, 平均硬度可达700 HV0.2, 是基体45#钢硬度的3倍。随着B含量的增加, 裂纹减少, 硬度有所降低, 但始终在600 HV0.2以上; 涂层的干摩擦磨损性能优于H13钢; 在3.5%NaCl电解液中耐腐蚀性良好, 与304不锈钢相当。     

激光熔覆Zr/FeCSiB涂层的组织和性能

采用激光预置熔覆法,通过在FeCSiB合金粉末中添加一定比率的强碳化物形成元素Zr,在中碳钢基体上制备原位析出的颗粒增强铁基复合材料表层。利用光学显微镜、场发射电子扫描显微镜(能谱仪)和金相组织分析系统,对熔覆层显微组织、硬质颗粒的成分及其分布规律进行了观察与分析。其显微组织特征是树枝状的先共晶奥氏体分布在共晶基体上的亚共晶介稳组织;奥氏体在随后的冷却过程中转变为马氏体;熔覆层与基体成良好的冶金结合。熔覆层内析出的硬质颗粒是以ZrC为主的复合碳化物,主要分布在枝晶内与枝晶间;单道搭接熔覆层颗粒的体积分数分别为1.96%、2.2%～3.84%;显微硬度值在800HV0.2～1100HV0.2之间。     

铝合金表面激光熔覆Al+Y粉末的研究

为了研究激光熔覆制备Al-Y合金涂层的可行性,采用CO2激光器熔化预置的Al+Y混合粉末的方法,利用SEM,XRD,EDS和硬度检验等方法分析了熔覆层的显微组织、物相组成、成分分布和硬度等。在2034铝合金表面得到了激光熔覆涂层,其物相主要由Al,Y5Al3,YAl3,YA1等组成,Y元素主要分布于晶界和枝晶间,熔覆层的显微硬度70HV0.2～95HV0.2与基体的100HV0.2～120HV0.2相比较低,原因在于降低了基体中Cu元素的固熔强化效果。结果表明,熔覆层与基体形成了良好的冶金结合,熔覆层显微组织显著细化。     

激光熔覆高硬涂层裂纹控制研究

为了解决激光熔覆高硬涂层开裂的问题, 采用CO2激光在20CrMnTi钢表面进行了激光熔覆Colmonoy88合金涂层(熔覆层维氏硬度超过了800 HV0.1)的研究。采用扫描电镜和能谱分析仪对熔覆层微观组织结构进行了分析, 并采用显微硬度计、摩擦磨损试验机等仪器对其性能进行了测试。研究发现提高预热温度可以显著降低熔覆层的开裂倾向, 但不足以使熔覆层中裂纹完全消失; 而CeO2的掺入也可以减少熔覆层中裂纹数量, 且当CeO2的含量w(CeO2)≥0.10%时, 熔覆层中裂纹完全消失。试验结果表明, CeO2的掺入能使熔覆层中晶粒得到细化, 显微硬度分布变得均匀, 耐磨性能得到提高; 且当CeO2的添加量为w(CeO2)＝0.10%～0.15%时, 熔覆层耐磨性能获得最大提高, 与未添加CeO2时相比提高了约67%, 磨损形式为磨粒磨损。     

CeO2对镍基碳化钨激光熔覆层性能的影响

研究了不同激光功率条件下不同含量的氧化铈对镍基碳化钨金属陶瓷熔覆层宏观质量、显微组织及熔覆层横截面硬度的影响。CeO2的掺入均能使镍基碳化钨金属陶瓷熔覆层中的相组织得到细化,裂纹大大减少,宏观质量得到显著改善。随稀土氧化物加入量的增加,稀土的细晶变质作用效果更加明显。当CeO2的含量为0.16wt%时,熔覆层的硬度达到最大约为900HV0.3～1300HV0.3,裂纹基本消失。激光功率对熔覆层的宏观质量、显微硬度及微观组织均有影响,当激光功率低于1.5kW时,难以得到连续光滑的熔覆层;当激光功率高于2.0kW时,熔覆层的晶粒长大,硬度明显降低。     

La_2O_3对激光熔覆镍基纳米Al_2O_3复合涂层组织和性能的影响

采用激光熔覆技术在Q235钢基体上制备了不同La2O3含量的镍基纳米Al2O3复合涂层。通过扫描电镜观察分析了熔覆层的微观组织结构,并对熔覆层的显微硬度和摩擦磨损性能进行了测试。试验结果表明,加入1.5wt%稀土La2O3时,熔覆层组织显著细化,由细小的等轴树枝晶和共晶组织组成,熔覆涂层的显微硬度在651.4HV0.2至732.4HV0.2之间,耐磨性能显著提高。     

激光功率和扫描速度对熔覆组织与性能的影响

采用激光熔覆技术在GCr15钢基材上制备FeCrNiSi合金熔覆层,通过超景深显微镜、显微硬度计及摩擦磨损试验机,研究激光工艺参数对熔覆层显微组织、硬度及摩擦磨损性能变化的影响规律.结果 表明:随着激光功率增大,熔覆层一次枝晶呈逐渐变大、变长的趋势,一次枝晶间距先增大后减小,二次枝晶间距逐渐减小;随着扫描速度加快,熔覆层一次枝晶呈先变大后减小的趋势,一次枝晶间距先增大后减小,二次枝晶间距先减小后增大.随着激光功率的降低或扫描速度的增加,熔覆层表面硬度提高,当激光功率为2400W、扫描速度为7 mm/s时,熔覆层最高硬度为781.5 HV,是基材的3.4倍;此时熔覆层磨损机制由磨粒磨损和黏着磨损逐渐演变为疲劳主导的磨损机制.     

工业纯铝表面激光熔覆Y粉的研究

为了研究稀土Y元素对工业纯铝表面激光熔覆层的组织和性能的影响,在工业纯铝基体上,采用CO2激光器制备了Al-Y合金熔覆层,利用金相显微镜、能谱分析、X射线衍射分析和显微硬度计等对熔覆层的显微组织、成分分布、物相组成和显微硬度进行了研究。由实验结果可知,Y元素显著细化了熔覆层的组织,熔覆层与基体形成良好的冶金结合;生成了含Y的新相YAl3,Y4Al2O9等铝钇金属间化合物;熔覆层区域的显微硬度43HV0.2~58HV0.2与基体的显微硬度30HV0.2~40HV0.2相比提高了50%~60%,在熔覆层表面硬度值达到最高。结果表明,通过激光熔覆Y粉可以提高工业纯铝的表面性能。     

激光原位熔覆制备TiC/TiB硬质陶瓷复合涂层

采用5 kW横流CO2激光器,在TC4钛合金表面熔覆TiC与TiB2混合粉末,制备出了组织细密、无裂纹与气孔的TiC/TiB复合陶瓷涂层.采用扫描电镜(SEM)、能量散射X谱仪(EDX)、X射线衍射仪(XRD)以及HXD-1000B显微硬度计,分析了熔覆层的显微组织形貌、成分与物相结构,测试了激光熔覆层的显微硬度.结果表明,激光熔覆原位制备的TiC/TiB复合涂层与基体呈冶金结合,熔覆层组织呈现出由表层十字形花瓣状TiC组织到结合区致密小颗粒TiC组织分布变化的特点.同时,熔层中有大量的纤维状TiB组织填充在十字形花瓣状组织与颗粒状组织之间,且纤维组织从熔覆层表层到结合区逐渐增加.熔覆层的显微硬度值最高可达1240 HV0.2,为基体的3.5倍.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures

The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) structures has been investigated taking into account the effect of the series resistance (R_s) and interface states (N_ss) at room temperature. The C-V and G/ω-V measurements have been carried out in the frequency range of 1 kHz to 1 MHz. The frequency dispersion in capacitance and conductance can be interpreted only in terms of interface states and series resistance. The N_ss can follow the ac signal and yield an excess capacitance especially at low frequencies. In low frequencies, the values of measured C and G/ω decrease in depletion and accumulation regions with increasing frequencies due to a continuous density distribution of interface states. The C-V plots exhibit anomalous peaks due to the N_ss and R_s effect. It has been experimentally determined that the peak positions in the C-V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. The effect of series resistance on the capacitance is found appreciable at higher frequencies due to the interface state capacitance decreasing with increasing frequency. In addition, the high-frequency capacitance (C_m) and conductance (G_m/ω) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. Experimental results show that the locations of N_ss and R_s have a significant effect on electrical characteristics of MIS structures.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaO_x layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO₂ interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO₂ interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.