BGA封装倒装焊点不同接触面跌落失效的研究

采用自由跌落的试验方法,研究了BGA(球栅阵列)封装自由跌落到不同材质基板后的可靠性,对比分析焊点裂纹产生、扩展直至断裂的机理。对失效封装芯片进行了染色处理,观察BGA封装中焊点的失效位置和焊点内部裂纹的形貌。结果表明,不同接触面上焊球裂纹都经历稳态-扩展-失效的过程,石质接触面上裂纹出现最早,裂纹扩展最快,失效最快,钢质接触面次之,最后是木质接触面。木质接触面的焊点失效模式主要是焊盘失效;钢质和石质接触面的焊点的失效模式以金属间化合物失效为主。比例风险模型(PHM)估计得到的寿命值与试验结果误差较小,能有效预测焊点自由跌落条件下的寿命。     

电子封装中的焊点及其可靠性

在电子封装中 ,焊点失效将导致器件乃至整个系统失效 ,焊点失效的起因是焊点中热循环引起的裂纹及其扩展。从焊点的微观组织及其变化、焊点失效分析、焊点可靠性预测等方面介绍了对电子封装焊点及其可靠性研究的状况。     

板级跌落试验下BGA焊球的疲劳裂纹行为研究

BGA焊球内部裂纹的生长是跌落可靠性试验中焊球失效的根本原因.比较和研究了无铅及有铅焊球在板级跌落试验下疲劳裂纹的行为.通过跌落试验获得了BGA焊球在不同加速度水平下的平均寿命,接着在同一加速度水平下跌落不同次数,使用荧光染色法观察焊球内部裂纹的生成和扩展行为,得到无铅及有铅BGA焊球内部裂纹随跌落次数增加的不同生长规律.根据观察结果分析和讨论了跌落试验下裂纹随跌落次数增加时的扩展行为及其原理,进一步阐明了BGA焊球的失效原因和失效机制.     

QFN器件在湿热环境中的界面裂纹分析

因吸潮而引起的界面破裂是塑封电子器件失效的一个重要原因。通过吸潮实验、无铅回流焊环境实验和湿热老化实验研究了QFN塑封器件内部界面裂纹情况。结果表明,未吸潮的器件经历无铅回流焊后很少产生裂纹,吸潮器件在吸潮期间未产生裂纹,但经历无铅回流焊后器件产生裂纹的几率达100%;裂纹在芯片、芯片粘结材料(DA)和塑封材料(EMC)的交界处的破坏程度最大;产生的裂纹的位置和扩展方向与结合材料的特性、结合界面的强度紧密相关。     

热循环条件下空洞对PBGA焊点热疲劳寿命的影响

球栅阵列(ball grid array, BGA)封装器件的广泛应用使空洞对焊点可靠性的影响成为业界关注的焦点之一.采用非线性有限元分析方法和统一型粘塑性本构方程,以PBGA组装焊点为对象,建立了互连焊点热应变损伤的三维有限元模型,并基于修正的Coffin-Manson方程,分析了在热循环加裁条件下不同位置和大小的空洞对焊点疲劳寿命的影响.研究结果显示,位于原应力集中区的空洞将降低焊点疲劳寿命,基于应变失效机理,焊点裂纹易在该类空洞周围萌生和扩展;位于焊球中心和远离原应力集中区的空洞,在一定程度上可提高焊点的疲劳寿命.     

提高功率器件抗热疲劳性能研究

众所周知,当半导体器件处于间歇工作状态时,器件经历周期性高温、低温循环,形成了热循环.该热循环在器件内部产生应力,并在热循环过程中反复不断地作用在器件内部的接合层上,使器件的热阻增加,最后导致器件热疲劳失效.热疲劳失效是影响功率器件可靠性的重要因素.因此,开展间歇工作寿命试验(即疲劳试验),考核器件在间歇工作状态下     

双面贴装电路板上BGA焊点的潜在失效机理

采用双面贴装回流焊工艺在FR4基板表面贴装Sn3.0Ag0.5Cu(SnAgCn)无铅焊点BGA器件,通过对热应力加速实验中失效的SnAgCu无铅BGA焊点的显微结构分析和力学性能检测,研究双面贴装BGA器件的电路板出现互连焊点单面失效问题的原因,单面互连焊点失效主要是由于回流焊热处理工艺引起的.多次热处理过程中,NiSnP层中形成的大量空洞是导致焊点沿(Cu,Ni)6Sn5金属间化合物层和Ni(P)镀层产生断裂失效的主要因素.改变回流焊工艺是抑制双面贴装BGA器件的印制电路板出现互连焊点单面失效问题的关键.     

ESPI在板级BGA封装器件焊球失效检测中的应用

球栅阵列封装(BGA)综合性能好,广泛应用于表面贴装.采用电子散斑干涉(ESPI)离面位移光路,在简单机械加栽情况下,对板级组装BGA器件的离面位移进行测量,比较了完好BGA、焊球分层BGA与焊球脱落BGA器件的测量结果.发现焊球有缺陷样品的条纹形状与完好样品相比有明显的差别,ESPI条纹在失效焊点附近发生突变.通过计算ESPI的位移测量值后,可判断BGA焊点的失效位置.结合有限元(FEM)模拟,对位移异常的BGA焊点进行分析.通过将计算结果与ESPI的位移测量值比较,可判断BGA焊点的失效模式.     

基于热循环与跌落冲击的BGA焊点可靠性研究

研究了BGA焊点在受到热循环冲击与跌落冲击综合作用下的可靠性,研究了基于不同热循环冲击条件下的电子产品的板级跌落寿命、失效机理与失效模式、断裂行为与Kirkendall空洞的关系。结果表明,有铅焊点比无铅焊点可靠性略高,弹性模量低的BGA与PCB制造材料耐热不耐跌落冲击,并提出了改善电子产品可靠性的办法。     

SAC105掺Ni焊球对焊接点强度与可靠性的影响

在内存封装领域,球栅阵列封装(BGA)由于具有高密度和低成本的特点而被广泛采用.在实际的使用过程中,由于遭受外界各种形式的机械负载和冲击造成器件失效,为了改善焊点的强度和可靠性,以SAC105(Sn985AgCu0.5)无铅焊球为参照制备出SAC105 Ni005焊球.为了研究两种焊球焊接点的可靠性与强度,采用焊球的快速剪切测试以及BGA器件的剪切测试方法来检测焊点强度,同时采用威布尔分析方法对两种焊球的热循环测试(TCT)结果进行分析.研究表明,SAC105 Ni0.05焊球比SAC 105焊球具有更长的温度循环可靠性预期寿命、更强的焊接点强度以及更低的脆性断裂的概率.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.