用于被动式毫米波成像的小型化Ka波段接收机

研制了一种工作于Ka波段用于被动式毫米波成像的基于单片微波集成电路(MMIC)的小型化接收机.该接收机主要由毫米波宽带低噪声放大器模块、毫米波小信号二极管检波器和视频放大电路组成.设计、制作、测试了接收机各个组成模块,对接收机的整体特性进行了测试.测试结果表明,该接收机的有效带宽约为7.4GHz、噪声小于3.8dB、增益约为30dB.应用喇叭天线和该接收机获得的一些毫米波图像表明,该接收机可以应用于被动毫米波成像.     

A 90-100 GHz double-folded slot antenna

A double-folded slot antenna (DFS) has been designed, fabricated, and tested at 90-100 GHz. The antenna shows a very wideband impedance around 20 Ω from 85 to 110 GHz. The low impedance is compatible with superconductor-insulator-superconductor (SIS) junctions, Schottky diodes or high electron mobility transistor (HEMT) amplifiers, which require a low impedance at millimeter wave frequencies. The antenna is placed on a dielectric lens to synthesize a semi-infinite substrate and realize high-directivity patterns. The measured radiation patterns agree very well with theoretical calculations and demonstrate symmetric main beams and sidelobe levels below -15 db over a 10% bandwidth. The double folded slot antenna is an attractive candidate for low-cost wideband millimeter-wave monolithic microwave integrated circuits (MMIC) front ends     

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contairns dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10.mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80°C. A direct broadcast satellite (DBS) receiver incorporating these MMIC's exhibits an overafl noise figure of /spl les/ 4.0 dB for frequencies from 11.7-12.2 GHz.     

Terahertz MMICs and Antenna-in-Package Technology at 300 GHz for KIOSK Download System

Toward the realization of ultra-fast wireless communications systems, the inherent broad bandwidth of the terahertz (THz) band is attracting attention, especially for short-range instant download applications. In this paper, we present our recent progress on InP-based THz MMICs and packaging techniques based on low-temperature co-fibered ceramic (LTCC) technology. The transmitter MMICs are based on 80-nm InP-based high electron mobility transistors (HEMTs). Using the transmitter packaged in an E-plane split-block waveguide and compact lens receiver packaged in LTCC multilayered substrates, we tested wireless data transmission up to 27 Gbps with the simple amplitude key shifting (ASK) modulation scheme. We also present several THz antenna-in-packaging solutions based on substrate integrated waveguide (SIW) technology. A vertical hollow (VH) SIW was applied to a compact medium-gain SIW antenna and low-loss interconnection integrated in LTCC multi-layer substrates. The size of the LTCC antennas with 15-dBi gain is less than 0.1 cm³. For feeding the antenna, we investigated an LTCC-integrated transition and polyimide transition to LTCC VH SIWs. These transitions exhibit around 1-dB estimated loss at 300 GHz and more than 35 GHz bandwidth with 10-dB return loss. The proposed package solutions make antennas and interconnections easy to integrate in a compact LTCC package with an MMIC chip for practical applications.     

Active 60 GHz front-end with integrated dielectric antenna

The hybrid integration of a dielectric antenna together with an MMIC low-noise amplifier in a 60 GHz front-end is presented. It is demonstrated how a low-loss substrate integrated dielectric antenna can efficiently be interconnected at miniature scale with the coplanar waveguide input of the MMIC. The experimentally obtained return loss is better than 11 dB from 55 to 65 GHz. Transmission path loss measurements of a wireless link confirm the low-loss potential of this approach for millimetre-wave front-ends.     

A compact 220 GHz heterodyne receiver module with planar Schottky diodes

This letter presents the development of a compact 220 GHz heterodyne receiver module for radars application in which a novel low pass wide stop band intermediate frequency (IF) filter is integrated. The planar Schottky anti-parallel mixing diode based subharmonic mixer (SHM) is used as the receiver’s first stage. The diode is flip-chip mounted on a 50 μm thick quartz substrate. The accurate modeling of the self and mutual inductance of the diode’s air-bridges are discussed. The measured conversion loss (CL) of the SHM has a minimum value of 6.2 dB at 210.5 GHz, and is lower than 8.4 dB in the frequency range 209.4–219.6 GHz with a 10 mW input power from a local oscillator (LO). The LO chain consists of a 110 GHz passive tripler, two Ka-band amplifiers and a Ka-band active tripler. The tested minimum double side band (DSB) noise temperature of the integrated 220 GHz heterodyne receiver is 725 K at 205.2 GHz and lower than 1550 K in the frequency range 199–226 GHz.     

345 GHZ PROTOTYPE SIS MIXER WITH INTEGRATED MMIC LNA

We report on heterodyne measurements at submillimeter wavelengths using a receiver with a Superconductor-Insulator-Superconductor (SIS) mixer device and a Microwave Monolithic Integrated Circuit (MMIC) cryogenic low noise amplifier (LNA) module integrated into the same block. The mixer characterization presented in this work demonstrates the feasibility of operating a MMIC LNA in close proximity to the SIS device without penalty in mixer performance due to heating effects. Verification of this functionality is crucial for the ongoing development of SuperCam, a 64-pixel focal plane array receiver consisting of eight, 1 × 8 integrated mixer/LNA modules. The test setup included a mixer block modified to accept a MMIC amplifier. Our tests show that the LNA can be operated over a broad range of V_drain voltages from 0.40–1.40 V, corresponding to dissipative powers of 2.6–29 mW. We observe no significant effect on the measured uncorrected receiver noise temperatures in the 345 GHz band.     

Small H-shaped antennas for MMIC applications

A small short-circuited H-shaped GaAs monolithic microwave integrated circuits (MMICs) patch antenna is presented. Resonant at 5.98 GHz, it is the lowest frequency MMIC patch antenna reported that we are aware of and is intended for short-range communications (e.g., vehicular). Initial experimental and theoretical characterization of the proposed structure has been carried out on soft microstrip substrates. It has been shown that the size of an H-shaped patch antenna can be reduced to as low as one tenth of that of a half wavelength patch antenna resonant at the same frequency, saving valuable substrate space. The resonance frequency, radiation patterns and gain have been investigated. Ground plane truncation effects, which are important for MMIC applications, have been examined using the finite-difference time-domain (FDTD) method     

InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用

利用改进的小信号模型对采用100nmInAlAs/InGaAs/InP工艺设计实现的PHEMTs器件进行建模, 并设计实现了一款W波段单片低噪声放大器进行信号模型的验证。为了进一步改善信号模型低频S参数拟合差的精度, 该小信号模型考虑了栅源和栅漏二极管微分电阻, 在等效电路拓扑中分别用Rfs和Rfd表示.为了验证模型的可行性, 基于该信号模型研制了W波段低噪声放大器单片.在片测试结果表明:最大小信号增益为14.4dB@92.5GHz, 3dB带宽为25GHz@85-110GHz.而且, 该放大器也表现出了良好的噪声特性, 在88GHz处噪声系数为4.1dB, 相关增益为13.8dB.与同频段其他芯片相比, 该放大器单片具有宽3dB带宽和高的单级增益.     

Simple 1 MM Receivers with a Fixed Tuned Double Sideband SIS Mixer and a Wideband INP MMIC Amplifier

We report on techniques to broaden the intermediate frequency (IF) bandwidth of the Berkeley‐Illinois‐Maryland Array (BIMA) 1mm Superconductor‐Insulator‐Superconductor (SIS) heterodyne receivers by combining fixed tuned Double Side Band (DSB) SIS mixers and wideband Monolithic Microwave Integrated Circuit (MMIC) IF amplifiers. To obtain the flattest receiver gain across the IF band we tested three schemes for keeping the mixer and amplifier as electrically close as possible. In Receiver I, we connected separate mixer and MMIC modules by a 1 ″ stainless steel SMA elbow. In Receiver II, we integrated mixer and MMIC into a modified BIMA mixer module. In Receiver III, we devised a thermally split block in which mixer and MMIC can be maintained at different temperatures–in this receiver module the mixer at 4 K sees very little of the 10–20 mW heat load of the biased MMIC at 10 K. The best average receiver noise we achieved by combining SIS mixer and MMIC amplifier is 45 ‐50 K DSB for ν_LO = 215–240 GHz and below 80 K DSB for ν_LO = 205 ‐ 270 GHz. Over an IF frequency band of 1 – 4 GHz we have demonstrated receiver DSB noise temperatures of 40 – 60 K. Of the three receiver schemes, we feel Receiver III shows the most promise for continued development.     

A 140-170-GHz low-noise uniplanar subharmonic Schottky receiver

A 150-GHz Schottky diode subharmonic receiver based on a coplanar-waveguide-fed double-folded-slot (DFS) antenna is presented in this paper. The DFS antenna is placed on an extended hemispherical high-resistivity silicon substrate lens to achieve a high directivity and a high coupling to a Gaussian beam efficiency. The uniplanar receiver results in a 12±0.5-dB measured double-sideband conversion loss at 144-152 GHz for a 8-10 mW local-oscillator power at 77 GHz, and has a wide-hand ⩽13-dB conversion loss over 30 GHz of bandwidth (140-170 GHz). The measured conversion loss includes silicon lens absorption and reflection losses, as well as IF mismatch losses. The applications are in new small aperture (7.5-cm lenses) collision-avoidance radars at 150 GHz     

A low noise receiver for millimeter and submillimeter wavelengths

A broadband, low noise heterodyne receiver, suitable for astronomical use, has been built using a Pb alloy superconducting tunnel junction (SIS). The RF coupling is quasioptical via a bowtie antenna on a quartz lens and is accomplished without any tuning elements. In this preliminary version the double sideband receiver noise temperature rises from 205 K at 116 GHz to 375 K at 349 Ghz, and to 815 K at 466 GHz. This is the most versatile and sensitive receiver yet reported for sub-mm wavelengths.     

Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

Highly integrated transmitter and receiver MMICs have been designed in a commercial 0.15 /spl mu/m, 88 GHz f/sub T//183 GHz f/sub MAX/ GaAs pHEMT MMIC process and characterized on both chip and system level. These chips show the highest level of integration yet presented in the 60 GHz band and are true multipurpose front-end designs. The system operates with an LO signal in the range 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO chain, resulting in an IF center frequency of 2.5 GHz. Although the chips are inherently multipurpose designs, they are especially suitable for high-speed wireless data transmission due to their very broadband IF characteristics. The single-chip transmitter MMIC consists of a balanced resistive mixer with an integrated ultra-wideband IF balun, a three-stage power amplifier, and the X8 LO chain. The X8 is a multifunction design by itself consisting of a quadrupler, a feedback amplifier, a doubler, and a buffer amplifier. The transmitter chip delivers 3.7/spl plusmn/1.5 dBm over the RF frequency range of 54-61 GHz with a peak output power of 5.2 dBm at 57 GHz. The single-chip receiver MMIC contains a three-stage low-noise amplifier, an image reject mixer with an integrated ultra-wideband IF hybrid and the same X8 as used in the transmitter chip. The receiver chip has 7.1/spl plusmn/1.5 dB gain between 55 and 63 GHz, more than 20 dB of image rejection ratio between 59.5 and 64.5 GHz, 10.5 dB of noise figure, and -11 dBm of input-referred third-order intercept point (IIP3).     

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi     

An improved solution for integrated array optics in quasi-opticalmm and submm receivers: the hybrid antenna

A dielectric lens antenna that is a special case of an extended hemispherical dielectric lens and is operated in the diffraction-limited regime is considered. The dielectric lens antenna is fed by a planar antenna that is mounted on the flat side of the dielectric lens antenna, using it as a substrate, and the combination is termed a hybrid antenna. Beam pattern and aperture efficiency measurements were made at millimeter and submillimeter wavelengths as a function of the extension of the hemispherical lens and of lens size. An optimum extension distance for which excellent beam patterns and simultaneously high aperture efficiencies can be achieved is found experimentally and numerically. At 115 GHz the aperture efficiency was measured to be (76±6)% for a diffraction-limited beam with sidelobes below -17 dB. Results for a single hybrid antenna with an integrated superconductor-insulator-superconductor (SIS) detector and a broadband matching structure at submillimeter wavelengths are presented. The hybrid antenna is space efficient in an array due to its high aperture efficiency, and is easily mass produced, thus being well suited for focal plane heterodyne receiver arrays     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

基于RC-CR多相网络的镜频抑制接收机MMIC

基于RC-CR多相网络技术研制了一款S波段镜频抑制接收机单片微波集成电路(MMIC),在MMIC芯片上集成S波段低噪声放大器(LNA)、差分IQ混频器、本振(LO)驱动放大器、RC-CR多相网络滤波器等电路单元,实现了S波段单片镜频抑制接收机,解决了镜频接收机小型化的问题.电路、电磁场软件仿真以及采用GaAs赝配高电子迁移率晶体管(PHEMT)工艺流片后的结果表明,在S波段实现了噪声系数小于1.8 dB,增益大于12 dB,中频(150±5) MHz带内镜频抑制大于35 dBc的技术指标.MMIC的芯片尺寸为4.8 mn×2.5 mm×0.07 mm.此镜频抑制接收机MMIC具有指标优异、体积小、集成度高的特点,可广泛用于各种需小型化的相控阵雷达和通信系统中.     

Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-/spl mu/m silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.     

60 GHz multi-chip-module receiver with substrate integrated waveguide antenna and filter

A compact 60 GHz MCM receiver has been demonstrated by integrating millimetre-wave substrate-integrated waveguides and GaAs MMICs for the first time. The module includes a waveguide antenna and filter, MMIC LNA and mixer, and lumped elements for IF filtering embedded into the multilayer photo-imageable thick-film substrate. Cavities for MMIC attachment are photo-imaged as part of the standard process.     

A GaAs HEMT MMIC chip set for automotive radar systems fabricatedby optical stepper lithography

A 77 GHz automotive radar system for collision avoidance and intelligent cruise control has recently gained interest because of its huge market potential. The questions of the optimum technological and system approaches leading to both low cost and high performance have not yet been finally answered. The approach to this problem reported here differs mainly in two aspects from the GaAs monolithic microwave integrated circuit (MMIC) solutions described earlier: (1) 0.12 μm gatelength pseudomorphic high electron mobility transistors (PHEMTs) are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT MMIC fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of a chip set consisting of four different MMICs [voltage controlled oscillator (VCO), harmonic mixer, transmitter, receiver] are described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost-effective and production-oriented way is shown. To our knowledge, this is the first demonstration of W-band coplanar multifunctional MMICs fabricated by optical stepper lithography