980nm InGaAs／GaAs／AlGaAs应变量子阱激光器

报导了脊形波导ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器的特性和实验结果，激光器阀值电流最低为９ｍＡ，典型值为１５ｍＡ，线性输出光功率大地１２０ｍＷ，微分量子效率典型值为６０％，５０℃，８０ｍＷ恒定功率条件下老化实验结果表明；该条件下激光器寿命超过１０００小时。     

利用量子阱部分无序技术实现的激光器／调制器腔内集成

利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异，在国内首次利用该法处理的外延片制作了脊波导结构激光器／调制器集成器件，实现了调制器单元对输出光强的调制。在５．６Ｖ调制电压下获得了大于２０ｄＢ的消光比。     

用离子注入的方法实现InGaAs/InGaAsP激光器材料的量子阱混合

为了在光开关器件的局部区域实现量子阱混合,选用1～2MeV、1×1013～5×1013cm－2的P＋离子注入到InGaAs/InGaAsP分别限制多量子阱（SCH－MQW）激光器结构,在700oC下快速热退火90s。发现光致发光谱的峰值位置发生蓝移9～89nm。蓝移的大小随着注入能量和剂量的增大而增大,并且能量比剂量对蓝移的影响更大。     

基于电吸收调制器的40Gbit/s光发射单元

采用电吸收调制器(EAM)作为电光调制器件,实现了基于电时分复用(ETDM)工作方式的40Gbit/s光发射单元,并采用SDH 42.836(Gbit/s标准数据库)对其进行了测试实验.在42.836Gbit/s数据率下,其输出光信号消光比达10dB以上,光眼图信噪比约11.4,抖动方均根值1.3～1.4ps;在G.652光纤中传输1km后,消光比大于9dB,光眼图信噪比约7.1,抖动方均根值为1.4～1.5ps,这些技术指标达到了实用要求.     

AlGaAsSb/InGaAsSb多量子阱结构的光致发光谱

用固态源ＭＢＥ技术生长了ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ多量子阱材料,研究了通过改变多量子阱ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ中的结构参数,如多量子阱中ＩｎＧａＡｓＳｂ的阱宽,ＡｌＧａＡｓＳｂ的垒宽及垒层中Ａｌ组分和阱层中的Ｉｎ组分,多量子阱中的阱数等,来提高ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ多量子阱的ＰＬ强度。     

GaAs多量子阱的光电流谱

在Ｔ＝７７Ｋ，测量了ＧａＡｓ多量子阱的光电流，发现在ｖ＝１３１２ｃｍ＾－１附近存在一个强电流峰，并且在这强电流峰附近的高波数区还有几个弱峰，强电流峰是量子阱中基态电子向第一激发态跃迁形成的，而弱峰与最子阱势垒以上的电子干涉有关。     

光阱吸收比对雾度测量的影响

分析了光阱吸收比对雾度测量的影响，推导出光阱吸收比给测量带来的系统误差的计算公式。     

4×10Gbit/s光时分复用(OTDM)系统中基于电吸收调制器(EAM)的光分插复用器

提出了一种光时分复用 (OTDM )系统中完全基于电吸收调制器的光分插复用器(O ADM ) ,该复用器具有简单的结构和灵活上下话路的能力。然后对实现这种O ADM所需要的关键技术进行了分析和讨论。     

InGaAs／InAlAs异质结的H3PO4／H2O2系的湿法腐蚀

采用了H3PO4/H2O2系化学腐蚀液对GSMBE外延的InGaAs/InP和InAIAs/InP材料湿法腐蚀特性进行了研究,研究了不同浓度和配比对于腐蚀速率和形貌影响.结果表明该腐蚀液体系具有良好的均匀性,腐蚀速率随浓度呈指数关系,表面形貌基本不受浓度影响.在增加腐蚀液中双氧水含量时,腐蚀速率先增大后减小,表面形貌良好;增加磷酸浓度腐蚀速率亦有增大趋势,表面出现尖锥状小丘.并对腐蚀液配比变化对腐蚀特性影响及腐蚀机理进行了讨论分析.     

基于InP衬底的应变和应变补偿的InGaAs／InAlAs材料的高分辨X射线衍射分析

高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料.通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计.通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料.利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好.     

单电源供电MSM/HEMT OEIC

给出了InGaAsMSM光探测器与InP基InAlAs/InGaAs HEMT两种器件单片集成实现的OEIC光接收机的设计方法与测试结果。该光接收机采用单电源供电，由一级放大器，两级源级跟随器和一个反馈电阻组成，当光接收机工作在2．5Gbit/s时，跨阻可达53dBΩ，采用＋5V电源供电，功耗仅为160mW，可有效地应用在光纤通信接收系统中。     

Zero-Magnetic-Field Spin Splitting of Conduction Subbands in InGaAs/InAlAs and GaAs/AlGaAs Quantum Wells

Zero-magnetic-field spin splitting in InGaAs/GaAs and GaAs/AlGaAs multiple quantum wells was investigated theoretically. The sp³s* empirical tight-binding method has been employed. It has been found that the splitting is much larger in InGaAs wells than that in GaAs wells. The origin of the splitting due to the structure inversion asymmetry was briefly discussed.     

GaAs Mach－Zehnder型光波导开关／调制器

采用非对称Ｘ结耦合器代替传统的Ｙ分支器，研制了ＧａＡｓＭａｃｈ－Ｚｅｈｎｄｅｒ型２×２光开光，得到了小于－２２．４ｄＢ的串音比和１２Ｖ左右的开关电压，器件的波导传输损耗小于７ｄＢ／ｃｍ。预计该器件可广泛应用于ＧａＡｓ开关列阵及高速光调制等领域。     

InGaAs/InP中离子注入和新型HPT

ＩｎＧａＡｓ／ＩｎＰ是制作光电器件与微波器件的重要材料。离子注入ＩｎＧａＡｓ／ＩｎＰ做掺杂或制作高阻层是人们十分关注的研究课题。采用Ｆｅ＾＋注入ＩｎＧａＡｓ／ＩｎＰ得到了电阻率升高的好结果。用Ｂｅ＾＋注入制作了新结构ＨＰＴ的基区。研制成功了在１．５５μｍ波长工作的ＩｎＧａＡｓ／ＩｎＰ新结构光电晶体管,在０．３μＷ入射光条件下,光电增益为３５０。     

A TEM and SEM-cathodoluminescence study of oval defects in graded InGaAs/GaAs buffer layers

The nature of oval defects in compositionally graded InGaAs/GaAs buffer layers has been investigated by means of Transmission electron microscopy (TEM) and Cathodoluminescence (CL). CL spectra show that emissions from within the defects have energies lower than that from the defect-free regions, thus demonstrating that the defects are richer in In than the surrounding matrix. No In particles have been detected within the defect core. TEM investigations reveal that the defects form in the topmost strained regions close to the surface and originate from stacking faults.     

Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

Highly ordered three-dimensional periodic arrays of In_0.40Ga_0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples.     

Interface control of InGaAs/AlAsSb heterostructures

We report here a photoluminescence (PL) study of AlAsSb/InGaAs/AlAsSb single quantum wells (SQWs) that are lattice-matched to InP substrates grown by molecular beam epitaxy (MBE). The group V species used, the interface termination procedures, and Si doping are shown to markedly influence the PL spectra of the SQWs: (1) the undoped SQWs grown using dimer group V species combined with As interface termination show sharp PL spectra, which correspond to a direct transition between the confined electrons and holes of InGaAs; (2) the PL peak is broadened and shifted towards a longer wavelength as a result of Sb interface termination; and (3) when the AlAsSb or InGaAs layers are highly doped to 1×10¹⁹ cm⁻³, the PL spectra become very broad. These results are most probably attributable to the enhanced exchange reaction between As and Sb, and also to the diffusion of In and Ga at the interfaces resulting from Si high doping and the use of tetramer group V species.