Method for microwave radiation enhancement using elongated nanotubes dispersed in a gaseous medium

A new method is proposed to enhance microwave radiation with a wavelength of λ ∼ 1 cm in an active medium comprising elongated conducting nanotubes dispersed in air, which is energy pumped by a nonstationary electric field. For a volume fraction of nanoparticles c ₀ ≈ 10⁻³ in air at atmospheric pressure, the necessary value of the nonstationary pumping electric field (generated by a high-power nanosecond pulsed voltage source) is estimated at ∼ 200 J/m³ and the weak signal gain is estimated at Γ₀ = 0.055 m⁻¹. One possible mechanism of microwave radiation enhancement in a spatial resonator is considered.     

Singlet delta oxygen concentration and the main process of its decrease in the afterglow of a DC discharge in oxygen flow

The concentration of O₂(a ¹Δ) molecules have been measured in the direct current discharge in an oxygen flow were measured in various cross sections in the gas flow channel after the discharge. It is shown that the decrease in the concentration can be described by a quadratic dependence of rate on the O₂(a ¹Δ) concentration. The rate constant of such a process is estimated to be ∼1 × 10⁻³¹ cm⁶/sec. Potential processes are considered. A three-body process in which an O(P) atom participates as the second particle apparently plays the key role     

Preparation of volatile oxygen-containing americium compounds separated by gas thermochromatography

Gas thermochromatographic experiments aimed to prepare volatile oxygen-containing americium compounds were performed. Under the experimental conditions, Am formed three volatile compounds: AmO₂, previously unknown trioxide AmO₃, and, presumably, acid of the composition H₂AmO₄, with centers of the adsorption zones at ∼475, ∼315, and ∼140°C. The calculated enthalpies of adsorption −ΔH _a⁰ of these compounds on the quartz surface (kJ mol⁻¹) are 180 ± 10, 144 ± 7, and 109 ± 8, respectively. Americium di- and trioxide are less volatile than the respective oxides of U, Np, and Pu. The same trend was observed with the presumed acids.     

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

The directional patterns, current-voltage characteristics, and spectral characteristics of mesastripe lasers with InGaAsSb active layers, emitting at λ=3.0–3.6 μm (77 K) and having threshold currents ≥15 mA (j _th≥200 A/cm²), are investigated. The maximum output power is 1.4 mW (λ∼3.3 μm), the differential quantum efficiency ∼3%(τ=5–30 μs, f=500 Hz) for lasing in a longitudinal mode with beam divergences ΔΘ∥∼15° and ΔΘ ⊥ ∼30°. The relationship of the differential quantum efficiency to the order of the spatial mode of the lasing is demonstrated. A single-mode, current-tunable (−30 cm⁻¹/A) laser is used to measure the transmission of methane in the region of the ν ₃ absorption band. Pis’ma Zh. Tekh. Fiz. 24, 40–45 (June 26, 1998)     

Cyclic fatigue-crack propagation in a silicon carbide whisker-reinforced alumina composite: role of load ratio

The characteristics of subcritical crack growth by cyclic fatigue have been examined in a silicon carbide whisker-reinforced alumina composite, with specific reference to the role of load ratio (ratio of minimum to maximum applied stress intensity, R=K _min/K _max); results are compared with similar subcritical crack-growth data obtained under constant load conditions (static fatigue). Using compact-tension samples cycled at ambient temperatures, cyclic fatigue-crack growth has been measured over six orders of magnitude from ∼10⁻¹¹–10⁻⁵ m cycle⁻¹ at load ratios ranging from 0.05–0.5. Growth rates (da/dN) display an approximate Paris power-law dependence on the applied stress-intensity range (ΔK), with an exponent varying between 33 and 50. Growth-rate behaviour is found to be strongly dependent upon load ratio; the fatigue threshold, ΔK _TH, for example, is found to be increased by over 80% at R=0.05 compared to R=0.5. These results are rationalized in terms of a far greater dependency of growth rates on K _max(da/dN ∞ K _max ³⁰ ) compared to ΔK(da/dN ∞ ΔK ⁵), in contrast to fatigue behaviour in metallic materials where generally the reverse is true. Micromechanisms of crack advance underlying such behaviour are discussed in terms of timedependent crack bridging involving either matrix grains or unbroken whiskers.     

NMR Manifestations of Nuclear Anapole Moments

We suggest to use insulating garnets doped by rare-earth ions for measurements of nuclear anapole moments. A parity violating shift of the NMR frequency arises due to the combined effect of the lattice crystal field and the anapole moment of the rare-earth nucleus. We show that there are two different observable effects related to frequency: (a) shift of the NMR frequency in an external electric field applied to the solid; the value of the shift is about Δν₁ ∼ 10⁻⁵ Hz with E = 10 kV/cm, and (b) splitting of the NMR line into two lines. The second effect is independent of the external electric field. The value of the splitting is about Δν₂ ∼ 0.5 Hz; it depends on the orientation of the crystal with respect to magnetic field. Both estimates are presented for the magnetic field of about 10 T.     

Investigation of gas-dynamic processes in optical discharges with an ablating polymer wall in air and vacuum conditions

Experimental research results are presented on the formation dynamics and macrostructure of optical discharges of condensed matter of a polymer series ((C₂F₄) _n , (CH₂O) _n ) under the action of a femtosecond laser (τ _0.5 ∼ 45–70 fs) pulses (I ₀ ∼ 10¹³−10¹⁵ W/cm²) in the UV — NIR spectral region (λ ∼ 266, 400, 800 nm) under air and vacuum conditions. Electron density distributions in the near-surface area of the optical discharge, vapor expansion, and velocities of shock-wave front propagation are determined for the first time by precise laser pulse micro-interferometry with high spatial and time resolution. The correspondence is shown of the values of the laser ablation spectral-energy threshold, as determined by interference microscopy and the interferometry of a gas-plasma flow. An estimation technique for the total momentum of light-erosion gas-plasma flow in the sub-nanonewton range is proposed and implemented for the first time. The results of comparative analysis are presented on the laser radiation conversion efficiency at different stages of femtosecond optical discharges.     

Quasi-static and dynamic compressive behaviour of poly(methyl methacrylate) and polystyrene at temperatures from 293 K to 363 K

Flow stress, Young’s Modulus, energy and strain of fracture of poly(methyl methacrylate) (PMMA) and polystyrene (PS) were studied under compressive loading at strain rates of 10⁻⁴–10 s⁻¹ and temperatures from 293 K to temperatures ∼20 K below T _g. It was found that the energy of fracture shows an increase in the quasi-static strain rate (10⁻⁴–10⁻³ s⁻¹) region and becomes constant in the low strain rate (10⁻²–10 s⁻¹) region, while the strain of fracture shows a slow decrease with rate over the strain rate range tested. The activation energies and volumes of PMMA and PS at yield stress, 20% and 30% strain were evaluated using Eyring’s theory of viscous flow. ΔG was found to be constant for all strain rates and strains for both PMMA and PS. The activation volume for both materials increased as a function of strain.     

Photoluminescence properties of AlxGa1−x As epitaxial layers grown under conditions of ultrafast flux cooling

Results are presented of studies of the photoluminescence properties of epitaxial layers of Al_xGa_1−x As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rates of cooling of the flux (V∼10²–10³ °C/s). The photoluminescence characteristics obtained indicate that the epitaxial layers are of high quality. It is also observed that when samples with x _buff=0.5–0.55 are exposed to laser radiation of power density ∼1 kW/cm² at a temperature of 77 K, the spectral composition of the radiation undergoes irreversible changes caused by the formation of an arsenic vacancy (V _As)-donor impurity complex. Pis’ma Zh. Tekh. Fiz. 23, 8–13 (March 12, 1997)     

Thermodynamic Properties of Matrine in Ethanol

In this paper, the enthalpies of dissolution of matrine in ethanol (EtOH) were measured using a RD496-2000 Calvet microcalorimeter at 309.65 K under atmospheric pressure. The differential enthalpy (Δ_dif H _m) and molar enthalpy (Δ_sol H _m) of dissolution of matrine in ethanol were determined. And the relationship between heat and the amount of solute was also established. Based on the thermodynamic and kinetic knowledge, the corresponding kinetic equation that described the dissolution process was determined to be \fracdadt=2.36×10^-4(1-a)^1.09{\frac{{\rm d}\alpha}{{\rm d}t}=2.36\times 10^{-4}(1-\alpha )^{1.09}} . Moreover, the half-life, t _1/2 = 48.89 min, Δ_sol H _m = −12.40 kJ · mol⁻¹, Δ_sol S _m = −354.7 J · mol⁻¹ · K⁻¹, and Δ _sol G _m =  97.43  kJ · mol⁻¹ of the dissolution process were also obtained. The results show that this work not only provides a simple method for the determination of the half-life for a drug but also offers a theoretical reference for the clinical application of matrine.     

X-ray dosimetric properties of vapor-grown CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

CdGa₂S₄ single crystals have been grown from a presynthesized source material by closed-tube iodine vapor transport, and their X-ray dosimetric properties have been studied. Their X-ray sensitivity coefficient K ranges from K = 1.26 × 10⁻¹¹ to 1.39 × 10⁻¹⁰ A min/(V R) at effective X-ray hardnesses V _a = 25–50 keV and dose rates E = 0.75–78.05 R/min, and increases with X-ray dose. The K(V _a) curve has a negative slope, in contrast to the K(E) curve. The photocurrent-dose curves of the CdGa₂S₄ single crystals demonstrate that the steady-state X-ray photocurrent is a power-law function of X-ray dose rate: ΔI _E,0 ∼ E ^α . With increasing V _a, the slope of the curves sharply decreases and α approaches unity.     

Defect structure and electrical conductivity in rapidly-quenched and slowly-cooled rhombohedral solid solutions of the system Bi2O3-BaO

The solid solubility limit, grain orientation, defect structure and electrical conductivity of solidified rhombohedral specimens in the Bi₂O₃-BaO system are described. The c-axes (in hexagonal notation) of solidified specimens were almost entirely oriented along the platelet/film thickness. Slow-cooling (∼ 10⁻²° Csec⁻¹) of the system gave solid solutions with substitutional type of 2BaO → 2Ba_Bi′ + 20+ V ₀ ^.. for 12 to 32 mol % BaO. High-temperature modification of slowly-cooled sample (16 mol % BaO) showed a conductivity of 8.8×10⁻¹ Ω⁻¹ cm ⁻¹ at 600° C along the conduction plane (perpendicular to the c-axis). Rapid quenching (∼ 10⁵° C sec⁻¹) produced solid solutions for 8 to 20 mol % BaO introducing interstitial Ba²⁺ (10–12 mol % BaO) and Schottky type defects such as V_Bi‴ and V _Bi ^‴ and V ₀ ^.. (16 to 20 mol % BaO), however the high-temperature modification of the rhombohedral structure could not be frozen.     

Boron doping of Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/Si heterostructures grown by silicon sublimation in germane medium

Controlled boron doping of Si_{1 − x} Ge _x epilayers has been achieved during low-temperature growth of SiGe/Si(100) heterostructures by sublimation of boron-doped silicon in a germane medium. Boron-doped single-crystalline silicon plate was sublimed by resistive heating to ∼1300°C. Using this source, heterostructures with selectively doped layers, sharp dopant concentration profiles, and a maximum boron concentration of ∼1 × 10¹⁹ cm⁻³ were obtained.     

Conductometric Study of Some Metal Halides in Glycerol + Water Mixtures

Electrolytic conductivities of potassium halides, KX (X = Cl⁻, Br⁻, I⁻) have been investigated in 10, 20, and 30 mass% glycerol + H₂O mixtures at 298.0, 308.0, and 318.0 K. The conductance data have been analyzed by the Fuoss-conductance–concentration equation in terms of the limiting molar conductance (Λ⁰), the association constant (K _A ), and the distance of closest approach of ion (R). The association constant (K _A ) tends to increase in the order: 10 mass% < 20 mass% < 30 mass% glycerol + water mixtures, while it decreases with temperature. Thermodynamic parameters ΔH ⁰, ΔG ⁰, and ΔS ⁰ are obtained and discussed. Also, Walden products (Λ⁰η) are reported. The results have been interpreted in terms of ion–solvent interactions and structural changes in the mixed solvents.     

Quench-condensed indium-hydrogen films. II. Changes in electric and superconducting characteristics near the metal-insulator transition

Electrical and superconducting properties of indium films condensed in a H₂ atmosphere (pressurep _{H 2}=6×10⁻⁶ to 1.4×10⁻⁴ Torr) onto a substrate cooled with liquid helium are investigated. As hydrogen content is increased, a continuous increase in residual resistivity ρ* is observed, permitting systematic study of the resistance vs. temperature dependenceR(T) and the superconducting transition temperatureT _c on approaching the metal-insulator transition (MIT). With regard to ρ*, four regimes of conductivity can be observed: (1) conductivity with a positive temperature resistance coefficient (TRC), (2) conductivity with a small, constant, negative TRC, (3) conductivity under weak localization with ΔR (T) ∼ln T or type corrections, (4) hopping conductivity.T _c rises continuously with ρ* and reaches its peak (∼5.2K) in the second regime. A further increase of ρ* leads to a decrease ofT _c and complete suppression of superconductivity. The experimental dependenceR(T) is compared with theory. TheT _c variation on approaching the MIT and the relation between Mooij's rule and the superconducting properties are discussed.     

Electrostrictive effect in perovskites and its transducer applications

Properties of new electrostrictive materials for displacive transducers are reviewed including theoretical, material and design studies. Intensive investigation of the electrostrictive effects in ferroelectric and antiferroelectric perovskites have led to some empirical rules: the product of the electrostriction coefficientQ and the Curie-Weiss constantC is constant for all perovskite crystals and theQ value is proportional to the square of the thermal expansion coefficient,α. Consistent with the empirical rules, the relaxor ferroelectric ceramic 0.9 Pb(Mg_1/3Nb_2/3)O₃ −0.1 PbTiO₃ possesses much larger strain with lower hysteresis, aging effects and thermal expansion than that obtained with piezoelectric lead zirconate titanate (PZT). Using a multilayer configuration similar to commercial capacitors, a new mirror control device capable of large strains with high reproducibility, up toΔL/L ∼ 10⁻³, with only 200 V applied has been developed.     

Photoluminescence and Raman studies in swift heavy ion irradiated polycrystalline aluminum oxide

Polycrystalline aluminum oxide is synthesized by combustion technique and XRD studies of the sample revealed the α-phase. The synthesized sample is irradiated with 120 MeV swift Au⁹⁺ ions for the fluence in the range from 1 × 10¹¹ to 1 × 10¹³ ions cm⁻². A broad photoluminescence (PL) emission with peak at ∼ 447 nm and two sharp emissions with peak at ∼ 679 and ∼ 695 nm are observed in pristine when sample was excited with 326 nm. However, in the irradiated samples the PL intensity at ∼ 447, 679 and 695 nm decreases with increase in ion fluence. The α-Al₂O₃ gives rise to seven Raman modes with Raman intensity with peaks at ∼ 253, 396, 417, 546, 630, 842, 867 cm⁻¹ observed in pristine. The intensity of these modes decreases with increase in ion fluence. However, the Raman modes observed at lower fluences are found to disappear at higher fluence.     

Power generation of the touching Cu/Bi-Te/Cu composites under the periodically alternating temperature gradients

The thermo-emf ΔV of the touching p- and n-type Cu/Bi-Te/Cu composites with different thicknesses of t _Bi-Te and t _Cu was measured as a function of time by alternating the temperature difference ΔT at periods of T = 20, 60, 120, 240 and ∞ sec, where t _Bi-Te was varied from 0.1 to 2.0 mm and t _Cu from 0 to 4.0 mm. As a result, ΔV changes significantly with t _Bi-Te, t _Cu and T. The effective thermo-emf ΔV _eff increases significantly with an increase of 1/T and exhibited a local maximum at 1/T = 1/240 s⁻¹. The resultant | α | and the effective temperature difference ΔT _eff were increased significantly by optimizing t _Bi-Te and t _Cu at 1/T = 1/240 s⁻¹. The power generation ΔW _eff (= ΔV _eff²/4R _calc) estimated using the measured ΔV _eff and calculated R _calc also exhibited a local maximum at 1/240 s⁻¹ for an optimum combination of t _Bi-Te = 0.1 mm and t _Cu = 2.0 mm, so that the maxima ΔW _eff at 1/T = 1/240 s⁻¹ for the p- and n-type composites were 2.28 and 2.92 times higher than those obtained at 1/T = 0 s⁻¹. This significant increase in ΔW _eff is owing to both the increase in ΔT _eff and the increase in ZT due to the increase in |α|. The power generation was thus found to be enhanced significantly by imposing the alternating temperature gradients on touching Cu/Bi-Te/Cu composites.     

Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters

The energy distribution of the density of occupied surface states (N _ss) at the cathode insulatorphosphor interface in ZnS:Mn electroluminescent thin-film (ELTF) emitters has been modeled on the basis of experimental data. Changes in this distribution depending on the parameters of exciting voltage pulses have been studied. It is established that the energy distribution of N _ss shifts toward deeper levels upon a decrease in the frequency of the exciting signal and the resulting increase in the pause between the adjacent switch-on states. This behavior corresponds to a cascade relaxation mechanism of electrons trapped on the surface states. Maximum values of the N _ss (∼2.5 × 10¹³ cm⁻²) and the specific density of surface states per unit energy (2 × 10¹⁴–10¹⁵ cm⁻² eV⁻¹) are determined for the cathode insulator-phosphor interface from which electrons are tunneling. Positions of the equilibrium (∼1.25 eV below the conduction-band bottom) and the quasi-equilibrium (0.6–1.25 eV) Fermi levels during the ELTF emitter operation are estimated.