Experimental characterization and mechanical behavior analysis of intermetallic compounds of Sn–3.5Ag lead-free solder bump with Ti/Cu/Ni UBM on copper chip

Due to today’s trend towards ‘green’ products, the environmentally conscious manufacturers are moving toward lead-free schemes for electronic devices and components. Nowadays the bumping process has become a branch of the infrastructure of flip chip bonding technology. However, the formation of excessively brittle intermetallic compound (IMC) between under bump metallurgy (UBM)/solder bump interface influences the strength of solder bumps within flip chips, and may create a package reliability issue. Based on the above reason, this study investigated the mechanical behavior of lead-free solder bumps affected by the solder/UBM IMC formation in the duration of isothermal aging. To attain the objective, the test vehicles of Sn–Ag (lead-free) and Sn–Pb solder bump systems designed in different solder volumes as well as UBM diameters were used to experimentally characterize their mechanical behavior. It is worth to mention that, to study the IMC growth mechanism and the mechanical behavior of a electroplated solder bump on a Ti/Cu/Ni UBM layer fabricated on a copper chip, the test vehicles are composed of, from bottom to top, a copper metal pad on silicon substrate, a Ti/Cu/Ni UBM layer and electroplated solder bumps. By way of metallurgical microscope and scanning-electron-microscope (SEM) observation, the interfacial microstructure of test vehicles was measured and analyzed. In addition, a bump shear test was utilized to determine the strength of solder bumps. Different shear displacement rates were selected to study the time-dependent failure mechanism of the solder bumps. The results indicated that after isothermal aging treatment at 150 °C for over 1000 h, the Sn–Ag solder revealed a better maintenance of bump strength than that of the Sn–Pb solder, and the Sn–Pb solder showed a higher IMC growth rate than that of Sn–Ag solder. In addition, it was concluded that the test vehicles of copper chip with the selected Ti/Cu/Ni UBMs showed good bump strength in both the Sn–Ag and Sn–Pb systems as the IMC grows. Furthermore, the study of shear displacement rate effect on the solder bump strength indicates that the analysis of bump strength versus thermal aging time should be identified as a qualitative analysis for solder bump strength determination rather than a quantitative one. In terms of the solder bump volume and the UBM size effects, neither the Sn–Ag nor the Sn–Pb solders showed any significant effect on the IMC growth rate.     

Effects of fourth alloying additive on microstructures and tensile properties of Sn–Ag–Cu alloy and joints with Cu

The effects of the fourth elements, i.e., Fe, Ni, Co, Mn and Ti, on microstructural features, undercooling characteristics, and monotonic tensile properties of Sn–3 wt.%Ag–0.5 wt.%Cu lead-free solder were investigated. All quaternary alloys basically form third intermetallic compounds in addition to fine Ag₃Sn and Cu₆Sn₅ and exhibit improved solder structure. The precipitates of Sn–3Ag–0.5Cu (–0.1 wt.%X; X=Ni, Ti and Mn) alloy are very fine comparing with the other alloys. The effective elements for suppressing undercooling in solidification are Ti, Mn, Co and Ni. All quaternary bulk alloys exhibit similar or slightly larger tensile strengths; especially Mn and Ni can improve elongation without degrading strength. The interfacial phases of Sn–3Ag–0.5Cu (–0.1 wt.%X; X=Fe, Mn and Ti)/Cu joints are typical Cu₆Sn₅ scallops. Sn–3Ag–0.5Cu (–0.1 wt.%X; X=Ni and Co)/Cu joints form very fine Sn–Cu–Ni and Sn–Cu–Co scallops at interface. The Cu/Sn–3Ag–0.5Cu–0.1Ni/Cu joint exhibits improved tensile strength prior to thermal aging at 125 and 150 °C. The fracture surface of Cu/Sn–3Ag–0.5Cu/Cu joint exhibits mixture of ductile and brittle fractures, while Cu/Sn–3Ag–0.5Cu (–0.1X; X=Ni and Co)/Cu joints exhibit only brittle fracture at interface. The Sn–3Ag–0.5Cu–0.1Ni alloy is more reliable solder alloy with improved properties for all tests in the present work.     

The influence of Sn–Cu–Ni(Au) and Sn–Au intermetallic compounds on the solder joint reliability of flip chips on low temperature co-fired ceramic substrates

The formation of intermetallic compounds in the solder joint of a flip chip or chip scale package depends on the under bump metallurgy (UBM), the substrate top surface metallisation, the solder alloy and the application conditions. To evaluate the influence of intermetallic compounds on the solder joint reliability, a detailed study on the influence of the UBM, the gold finish thickness of the substrate top surface metallisation, the solder alloy and the aging conditions has been conducted. Flip chips bumped with different solder alloys were reflow-mounted on low temperature co-fired ceramic substrates. The flip chip package was then aged at high temperature and a bump shear test followed to examine the shear strength of the solder joint at certain aging intervals. It was found that the type of UBM has a great impact on the solder joint reliability. With Ni(P)/Au as the UBM, well-documented gold embrittlement was observed when the gold concentration in the eutectic SnPb solder was about 3 wt%. When Al/Ni(V)/Cu was used as the UBM, the solder joint reliability was substantially improved. Copper dissolution from the UBM into the solder gives different intermetallic formations compared to Ni(P)/Au as UBM. The addition of a small amount of copper in the solder alloy changed the mechanical property of the intermetallic compound, which is attributed to the formation of Sn–Cu–Ni(Au) intermetallic compounds. This could be used in solving the problem of the AuSn₄ embrittlement. The formation and the influence of this Sn–Cu–Ni(Au) intermetallic phase are discussed. The gold concentration in the solder joint plays a role in the formation of intermetallic compounds and consequently the solder joint reliability, especially for the Sn–Ag–Cu soldered flip chip package.     

Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system

This paper aims to understand the solder bump electromigration phenomenon in the Cu/Sn–3Ag–0.5Cu/Cu system. A temperature of 453 K with a current density of 10 kA/cm² was applied. A void nucleated at the highest current density point at the cathode. As the void grew along the cathode side, a solder depletion occurred on the opposite side of the electron entry point, resulting in an open failure. A unique purposely-designed 3D model simulation methodology provides a good understanding of the void nucleation and growth behavior. The temperature of the solder joint during the electromigration test was measured successfully by the resistance change in the junction line between the two joints.     

The influence of solder volume and pad area on Sn–3.8Ag–0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging

This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area (V/A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging.     

Effects of pre-bump probing and bumping processes on eutectic solder bump electromigration

This paper investigates the electromigration reliability of flip chip packages with and without pre-bump wafer probing via high temperature operation life test (HTOL) using printed and electroplated bumps. Under bump metallization (UBM) of printed and electroplated bumps is a thin film of Al/Ni(V)/Cu and Ti/Cu/Ni, respectively, while the bump material consists of eutectic Sn/Pb solder. Current densities from 7380 to 20 100 A/cm² and ambient temperatures at 100, 125 and 150 °C are applied in order to study their impact on electromigration. The results reveal that the bump temperature has a higher influence than the current density when it comes to bump failures. The observed interconnect damage is from bumps with electrical current flowing upward into the UBM/bump interface (cathode). Identified failure sites and modes reveal structural damage at the region of the UBM and UBM/bump interface, in the form of solder voiding and cracking. The effects of current polarity, current crowding, and operation temperature are key factors to electromigration failures of flip chip packaging. The maximum allowable current density of the electroplated bumps is superior to the printed bumps by a factor of 3.0–3.7 times. Besides, the median time to failure (MTTF) of without-underfill packaging is preferred to that of with-underfill packaging by 1.5–2.2 times. Furthermore, the differences in MTTF between pre-bump and without pre-bump probing procedures are 2.0–19.4% and 1.6–10.3% for printed and electroplated bumps, respectively.     

Properties of low temperature Sn–Ag–Bi–In solder systems

The metallurgical and mechanical properties of Sn–3.5 wt%Ag–0.5 wt%Bi–xwt%In (x = 0–16) alloys and of their joints during 85 °C/85% relative humidity (RH) exposure and heat cycle test (−40–125 °C) were evaluated by microstructure observation, high temperature X-ray diffraction analysis, shear and peeling tests. The exposure of Sn–Ag–Bi–In joints to 85 °C/85%RH for up to 1000 h promotes In–O formation along the free surfaces of the solder fillets. The 85°C/85%RH exposure, however, does not influence the joint strength for 1000 h. Comparing with Sn–Zn–Bi solders, Sn–Ag–Bi–In solders are much stable against moisture, i.e. even at 85 °C/85%RH. Sn–Ag–Bi–In alloys with middle In content show severe deformation under a heat cycles between −40 °C and 125 °C after 2500 cycles, due to the phase transformation from β-Sn to β-Sn + γ-InSn₄ or γ-InSn₄ at 125 °C. Even though such deformation, high joint strength can be maintained for 1000 heat cycles.     

A study in flip-chip UBM/bump reliability with effects of SnPb solder composition

This paper aims to investigate the electromigration phenomenon of under-bump-metallization (UBM) and solder bumps of a flip-chip package under high temperature operation life test (HTOL). UBM is a thin film Al/Ni(V)/Cu metal stack of 1.5 μm; while bump material consists of Sn/37Pb, Sn/90Pb, and Sn/95Pb solder. Current densities of 2500 and 5000 A/cm² and ambient temperatures of 150–160 °C are applied to study their impact on electromigration. It is observed that bump temperature has more significant influence than current density does to bump failures. Owing to its higher melting point characteristics and less content of Sn phase, Sn/95Pb solder bumps are observed to have 13-fold improvement in Mean-Time-To-Failure (MTTF) than that of eutectic Sn/37Pb. Individual bump resistance history is calculated to evaluate UBM/bump degradation. The measured resistance increase is from bumps with electrical current flowing upward into UBM/bump interface (cathode), while bumps having opposite current polarity cause only minor resistance change. The identified failure sites and modes from aforementioned high resistance bumps reveal structural damages at the region of UBM and UBM/bump interface in forms of solder cracking or delamination. Effects of current polarity and crowding are key factors to observed electromigration behavior of flip-chip packages.     

Improvement in high-temperature degradation by isotropic conductive adhesives including Ag–Sn alloy fillers

The reliability evaluation of Cu and Sn/Ni joined with isotropic conductive adhesives (ICAs) including Ag–Sn alloy fillers with or without Ag plating instead of Ag fillers was examined using tensile tests, electrical resistivity tests and microstructural observations. For an ICA, including Ag–Sn alloy fillers added to Sn–58wt%Bi fillers, the tensile strength was found to improve, but the electrical resistivity worsened with 150 °C heat exposure. An ICA, including, Ag–Sn alloy fillers with Ag plating, was able to maintain electrical resistivity after being subjected to 150 °C heat exposure. The Ag plating on the Ag–Sn fillers reacted with the Sn in the Ag–Sn fillers, leading to the joining of the fillers with each other though metallurgical connections, and the transformation of Ag into Ag₃Sn within a 1-h curing time at 150 °C, since the Ag plating was microscopic and active. After heat exposure, the Sn distributed itself along the substrate/ICA interface by the diffusion of Sn though the connected fillers, and Cu₃Sn formed at the Cu/ICA interface, in contrast with the Ag–Sn alloy fillers without Ag plating.     

Effect of Ag micro-particles content on the mechanical strength of the interface formed between Sn–Zn binary solder and Au/Ni/Cu bond pads

In this study, addition of Ag micro-particles with a content in the range between 0 and 4 wt.% to a Sn–Zn eutectic solder, were examined in order to understand the effect of Ag additions on the microstructural and mechanical properties as well as the thermal behavior of the composite solder formed. The shear strengths and the interfacial reactions of Sn–Zn micro-composite eutectic solders with Au/Ni/Cu ball grid array (BGA) pad metallizations were systematically investigated. Three distinct intermetallic compound (IMC) layers were formed at the solder interface of the Au/electrolytic Ni/Cu bond pads with the Sn–Zn composite alloys. The more Ag particles that were added to the Sn–Zn solder, the more Ag–Zn compound formed to thicken the uppermost IMC layer. The dissolved Ag–Zn IMCs formed in the bulk solder redeposited over the initially formed interfacial Au–Zn IMC layer, which prevented the whole IMC layer lifting-off from the pad surface. Cross-sectional studies of the interfaces were also conducted to correlate with the fracture surfaces.     

High temperature reliability and interfacial reaction of eutectic Sn–0.7Cu/Ni solder joints during isothermal aging

The interfacial reactions and growth kinetics of intermetallic compound (IMC) layers formed between Sn–0.7Cu (wt.%) solder and Au/Ni/Cu substrate were investigated at aging temperatures of 185 and 200 °C for aging times of up to 60 days. After reflow, the IMC formed at the interface was (Cu, Ni)₆Sn₅. After aging at 185 °C for 3 days and at 200 °C for 1 day, two IMCs of (Cu, Ni)₆Sn₅ and (Ni, Cu)₃Sn₄ were observed. The growth of the (Ni, Cu)₃Sn₄ IMC consumed the (Cu, Ni)₆Sn₅ IMC at an aging temperature of 200 °C due to the restriction of supply of Cu atoms from the solder to interface. After aging at 200 °C for 60 days, the Ni layer of the substrate was completely consumed in many parts of the sample, at which point a Cu₃Sn IMC was formed. In the ball shear test, the shear strength decreased with increasing aging temperature and time. Until the aging at 185 °C for 15 days and at 200 °C for 3 days, fractures occurred in the bulk solder. After prolonged aging treatment, fractures partially occurred at the (Cu, Ni)₆Sn₅ + Au/solder interface for aging at 185 °C and at the (Ni, Cu)₃Sn₄/Ni interface for aging at 200 °C, respectively. Consequently, thick IMC layer and thermal loading history significantly affected the integrity of the Sn–0.7Cu/Ni BGA joints.     

Impact Testing of Sn-3.0Ag-0.5Cu Solder with Ti/Ni(V)/Cu Under Bump Metallization After Aging at 150°C

Nonmagnetic Ni(V) metal and low consumption rate with solders are the advantages of sputtered Ti/Ni(V)/Cu under bump metallization (UBM). However, a Sn-rich phase (“Sn-patch” herein) can form in the Ni(V) layer after reflow and aging. In lead-free solder, Sn-patches form and grow more quickly than in Sn-Pb solder. Thus, the effect of Sn-patches on solder joint reliability becomes critical. In this study, Sn-3.0Ag-0.5Cu solder was reflowed with Ti/Ni(V)/Cu UBM at 250°C for 60 s, and then aged at 150°C for various durations. A high-speed impact test was introduced to evaluate solder joint reliability. After impact testing, it was found that, the larger the Sn-patch, the greater the propensity of the solder joint to suffer brittle fracture. The correlation between Sn-patch and solder joint reliability is discussed.     

Microstructure evolution of the Sn–Ag–y%Cu interconnect

The lead free Sn–Ag–y%Cu (y = 0.0, 0.5, 1.0 and 2.0) interconnect interfacial microstructures and the microstructure evolution under thermal treatment (isothermal aging, 150 °C/1000 h) were studied in detail by using surface microetching microscopy and cross section microscopy. The corresponding mechanical and reliability behaviors were evaluated by performing shear test and fracture mode analysis before and after the thermal treatment. The results indicate: (i) The interconnects could have different microstructures and intermetallic compound (IMC), depending on the Cu content. The Cu–Sn IMC could have microstructures that were clusters or protrusion-like, Augustine grass leaf-like, scissor-like, tweezers-like, etc. (ii) Ag₃Sn IMCs were not observed at time zero for any interconnect groups, but they occurred after the aging for all groups. The Ag₃Sn IMC could have different microstructures, again depending on Cu content. For low Cu content, the Ag₃Sn IMCs were granules or nodules; for higher Cu content, Ag₃Sn IMCs were plate-like. (iii) The growth of Ag₃Sn plates was promoted by the growth of Cu–Sn IMCs, but indirectly linked to the Cu content. (iv) High Cu content (1.0 wt% and higher) could degrade the mechanical and reliability performances of the LF interconnect by providing a brittle joint, which was mainly achieved through the substantial growth of Cu–Sn IMCs and Ag₃Sn plates.     

elemental redistribution and interfacial reaction mechanism for the flip chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump with Al/Ni(V)/Cu under-Bump metallization during aging

In flip chip technology, Al/Ni(V)/Cu under-bump metallization (UBM) is currently applicable for Pb-free solder, and Sn−Ag−Cu solder is a promising candidate to replace the conventional Sn−Pb solder. In this study, Sn-3.0Ag-(0.5 or 1.5)Cu solder bumps with Al/Ni(V)/Cu UBM after assembly and aging at 150°C were employed to investigate the elemental redistribution, and reaction mechanism between solders and UBMs. During assembly, the Cu layer in the Sn-3.0Ag-0.5Cu joint was completely dissolved into solders, while Ni(V) layer was dissolved and reacted with solders to form (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). The (Cu_1−y,Ni_y)₆Sn₅ IMC gradually grew with the rate constant of 4.63 × 10⁻⁸ cm/sec^0.5 before 500 h aging had passed. After 500 h aging, the (Cu_1−y,Ni_y)₆Sn₅ IMC dissolved with aging time. In contrast, for the Sn-3.0Ag-1.5Cu joint, only fractions of Cu layer were dissolved during assembly, and the remaining Cu layer reacted with solders to form Cu₆Sn₅ IMC. It was revealed that Ni in the Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. During the period of 2,000 h aging, the growth rate constant of (Cu_1−y,Ni_y)₆Sn₅ IMC was down to 1.74 × 10⁻⁸ cm/sec^0.5 in, the Sn-3.0Ag-1.5Cu joints. On the basis of metallurgical interaction, IMC morphology evolution, growth behavior of IMC, and Sn−Ag−Cu ternary isotherm, the interfacial reaction mechanism between Sn-3.0Ag-(0.5 or 1.5)Cu solder bump and Al/Ni(V)/Cu UBM was discussed and proposed.     

The reliability study of selected Sn–Zn based lead-free solders on Au/Ni–P/Cu substrate

Since both Ag and In are important melting point depressants in Sn–Zn based solders, a series Sn–Zn based solders with various amounts of Ag and In additions was studied in the experiment. The melting behavior of solder alloys, wetting characteristics, coefficients of thermal expansion, microstructural evolution and long-term reliability of the selected Sn–Zn based solder on Au/Ni–P metallized copper substrate were examined. Based on the experimental result, there is little change in the melting range of Sn–Zn based solder alloys by minor addition of Ag. On the contrary, the melting point of Sn–Zn based alloys can be effectively decreased by In additions. However, the difference between solidus and liquidus temperature is broadened as the increment of In into Sn–Zn based solders. 76Sn–9Zn–15In has the lowest liquidus temperature among all alloys, and it can effectively bond the Au/Ni–P metallized copper substrate. The microstructure of 76Sn–9Zn–15In alloy soldered at 200 °C for 20 min is primarily comprised of Sn–In γ phase and needle-like ZnO₂. Since there is no flux usage during soldering, zinc oxide cannot be avoided even the process performed under 2×10⁻² mbar vacuum environment. It is also noted that there is no interfacial reaction layer between 76Sn–9Zn–15In and Au/Ni–P metallized copper substrate after soldering. However, there is a reaction layer between 76Sn–9Zn–15In and substrate as the soldered specimen aged at 90 °C for 168 h. Its chemical composition is close to Zn-rich γ phase (NiZn₃) alloyed with minor Sn, In, Cu and P. For the specimen further aged at 90 °C for 336 h, there are cracks along the interface between solder alloy and electroless Ni–P layer. The oxidation of the interfacial Zn-rich γ phase plays an important role in deterioration of the bonding between 76Sn–9Zn–15In and Au/Ni–P metallized copper substrate.     

Evaluation of displacement rate effect in shear test of Sn–3Ag–0.5Cu solder bump for flip chip application

An experimental investigation was combined with a non-linear finite element analysis using an elastic–viscoplastic constitutive model to study the effect of ball shear speed on the shear forces of flip chip solder bumps. A solder composition used in this study was Sn–3mass%Ag–0.5mass%Cu. A low cost bumping process has been employed using electroless Ni and immersion Au followed by solder paste stencil printing. A thin layer of intermetallic compound, (Ni_1−xCu_x)₃Sn₄, was formed by the reaction between the solder and electroless Ni with a thickness of about 1.4 μm, while some discontinuous (Cu_1−yNi_y)₆Sn₅ particles were also formed at the interface. The compositions of the resulting compounds were identified using energy dispersive spectrometer (EDS) and electron microprobe analysis (EPMA). Shear tests were carried out over a shear speed range from 20 to 400 μm/s at a shear ram height of 20 μm. The shear force was observed to linearly increase with shear speed and reach the maximum value at the fastest shear speed in both experimental and computational results. The optimum shear speeds for the shear test of solder bumped flip chip were recommended to be not exceeding 200 μm/s. The failure mechanisms were discussed in terms of von Mises stresses and plastic strain energy density distributions.     

Suppressing Sn-Patch Growth in Ti/Ni(V)/Cu Under Bump Metallization with Sn-Ag-Cu Solder After Reflow and Aging

Sputtered Ti/Ni(V)/Cu under bump metallization (UBM) is widely used in flip chip technology because the metals are nonmagnetic and the consumption of the Ni(V) layer is low. It is noted that V does not react with solders and intermetallic compounds (IMC) during reflow and aging; however, a Sn-patch forms in the Ni(V) layer, and the Sn-patch growth may cause the IMCs to detach from the interface of solder joints. In this study, Sn-3.0Ag-0.5Cu solder was reflowed on Ti/Ni(V)/Cu UBM with different Cu thicknesses at 250°C for 60 s, and then aged at 150°C for various periods of time. It was revealed that the Sn-patch growth could be controlled by increasing the Cu thickness in the Ti/Ni(V)/Cu UBM. A feasible approach to suppress Sn-patch formation after reflow and aging is discussed.     

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density of 2.5 × 10⁴ A/cm² at 423 K using flip-chip specimens comprised of an upper Si chip and a lower bismaleimide triazine (BT) substrate. Electromigration failure of the Sn-37Pb and Sn-3.0Ag-0.5Cu solder bumps occurred with complete consumption of electroless Ni immersion Au (ENIG) underbump metallization (UBM) and void formation at the cathode side of the solder bump. Finite element analysis and computational simulations indicated high current crowding of electrons in the patterned Cu on the Si chip side, whereas the solder bumps and Cu line of the BT substrate had a relatively low density of flowing electrons. These findings were confirmed by the experimental results. The electromigration reliability of the Sn-3.0Ag-0.5Cu solder joint was superior to that of Sn-37Pb.     

The formation and growth of intermetallic compounds and shear strength at Sn–Zn solder/Au–Ni–Cu interfaces

The microstructures and shear strength of the interface between Sn–Zn lead-free solders and Au/Ni/Cu interface under thermal aging conditions was investigated. The intermetallic compounds (IMCs) at the interface between Sn–Zn solders and Au/Ni/Cu interface were analyzed by field emission scanning electron microscopy and transmission electron microscopy. The results showed the decrease in the shear strength of the interface with aging time and temperature. The solder ball with highly activated flux had about 8.2% increased shear strength than that with BGA/CSP flux. Imperfect wetting and many voids were observed in the fracture surface of the latter flux. The decreased shear strength was influenced by IMC growth and Zn grain coarsening. In the solder layer, Zn reacted with Au and then was transformed to the β-AuZn compound. Although AuZn grew first, three diffusion layers of γ-Ni₅Zn₂₁ compounds were formed after aging for 600 h at 150 °C. The layers divided by Ni₅Zn₂₁ (1), (2), and (3) were formed with the thickness of 0.7 μm, 4 μm, and 2 μm, respectively.     

Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints

The electromigration on void formation and failure mechanism of FCBGA packages under a current density of 1 × 10⁴ A/cm² and an environmental temperature of 150 °C was investigated. Two solder/substrate combinations of Sn3Ag1.5Cu with Cu-OSP and Cu/Ni/Au were examined. A conservative failure criterion was adopted to predict the failure of package, and SEM was used to observe in situ microstructural change and failure modes.Failure was mainly attributed to void occupation along UBM/solder interfaces by the side of cathode chip of bumps with downward electron flow. The current crowding was the cause for void initiation from the entrance corner of electron flow. Two specific void locations were identified at IMC/solder and UBM/IMC interfaces, and both can co-exist in the same specimen but in different bumps. No coupling mode of void was found. Since there is a discrepancy of diffusion rate between solder and IMC layers, current density results in more voids between them. A current density of 1 × 10⁴ A/cm² was found as a dominant factor that was high enough for void pattern at IMC/solder interface. However, the void formation at the UBM/IMC interface was generally induced by the UBM consumption due to the high temperature of 150 °C that dominates the void morphology crucially at UBM/IMC interface.