(1-x)La0.7Ca0.3MnO3/xAg磁电阻的温度稳定性

用固相反应法将Ag引入La0.7Ca0.3MnO3颗粒表面,形成(1-x)La0.7Ca0.3MnO3/xAg(x=0.00,0.10,0.20,0.25,0.30,0.35)。通过XRD谱、扫描电子显微镜(SEM)照片及SEM能谱(EDS)、ρ-T曲线、ρ-T拟合曲线、MR-T曲线,研究电输运性质及MR温度稳定性。结果表明:随复Ag量增大,电阻率急剧下降,高复Ag(x≥0.3)的电阻率比低复Ag(x≤0.10)的电阻率下降2个数量级;发现x=0.00,0.10用ρ-T2公式拟合比较合理,是单磁子散射作用;x=0.20,0.25用ρ-T2.5公式拟合比较合理,是自旋波散射作用;x=0.30,0.35,分别在97,93 K以上用ρ-T4.5公式拟合比较合理,说明是电子-磁子散射作用;所有复Ag样品,在250～20 K温区MR表现出很好的温度稳性,特别是x=0.10的样品,在220～150 K温区MR保持(13.8±0.2)%。提出磁电阻稳定性的机制:Ag与钙钛矿颗粒形成电输运二元通道,钙钛矿颗粒通道产生的低场磁电阻与Ag通道产生的正常磁电阻共同作用,产生MR温度稳定性。     

La_(0.67)Ca_(0.33-x)Ba_xMnO_3的电输运性质反常及磁电阻温度稳定性

用固相反应法制备La_(0.67)Ca_(0.33-x)Ba_xMn O_3(x=0,0.10,0.15,0.20,0.25)系列样品,烧结温度为1200℃。通过X射线衍射(XRD)图谱,扫描电子显微镜(SEM)照片、零场和加场下的电阻率-温度(ρ-T)曲线,磁电阻-温度(MR-T)曲线,研究Ba~(2+)替代Ca~(2+)的La_(0.67)Ca_(0.33-x)Ba_xMnO_3的电输运性质及磁电阻温度稳定性。结果表明:随Ba~(2+)替代量的改变晶体结构发生变化,x=0的样品为立方结构,x=0.10的样品为正交结构,x=0.15,0.20,0.30的样品为六方结构。x=0.10样品的电输运性质出现反常,它的电阻率不仅比未掺Ba的La_(0.67)Ca_(0.33)Mn O_3高出60倍,也比高掺Ba样品的电阻率高出几倍,随Ba~(2+)替代量的增加电阻率逐渐下降,用掺Ba引起的晶格结构变化及Mn O_6八面体畸变进行解释;高掺Ba样品实现了室温附近磁电阻温度稳定性,x=0.15的样品在187~246 K温区磁电阻为(8.91±0.42)%,x=0.20的样品在230~290 K温区磁电阻为(6.07±0.32)%,x=0.25的样品在320 K以下直至50 K温区磁电阻均大于14%。在0.8 T磁场下在室温附近产生磁电阻的温度稳定性有利于MR效应的实际应用。磁电阻温度稳定性机制是,钙钛矿的磁电阻是体相内双交换作用产生的本征磁电阻与界面自旋相关散射或自旋极化隧穿产生的低场磁电阻的叠加,制备样品时控制烧结温度(1200℃),尽量提高低场磁电阻,两种磁电阻叠加产生磁电阻温度稳定性。     

(1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)复合体系的电输运性质及低场磁电阻效应

用固相反应法制备了(1 -x)La0.6Dy0.1Sr0.3MnO3/0.5x( Sb2 O3)系列样品,通过电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线,研究了样品的电输运性质,电输运机制及低场磁电阻效应.结果表明:所有样品在高温区表现为绝缘体导电,在低温区表现为金属导电,产生绝缘体-金属相变;在金属导电区主要是单磁子散射起作用,可以用公式ρ=ρ0+AT拟合;所有样品在整个温区随温度降低MR持续增大,表现出低场磁电阻特征,复合样品的磁电阻(MR)与纯的La0.6Dy0.1Sr0.3 MnO3的MR相比,在低温区减小,在高温区增大,对x=0.15的样品在高温区的MR大幅度提高,当B=0.2 T,T=300 K时,MR达7.79％,比纯La0.6Dy0.1 Sr0.3 MnO3的MR增大2.6倍,有利于MR的实际应用.     

非化学计量(La0.6Dy0.1Sr0.3)1-xMnO3的电输运及MR温度稳定性机制研究

用固相反应法制备了非化学计量的(La0.6Dy0.1Sr0.3)1-xMnO3(x=0.00,0.10,0.20,0.30,0.35)系列样品,通过XRD、ρ-T曲线、MR-T曲线,研究电输运及磁电阻(MR)温度稳定性的机制。XRD检测表明,非化学计量的(La0.6Dy0.1Sr0.3)1-xMnO3在1200℃下烧结24 h,实际形成了La0.6Dy0.1Sr0.3MnO3钙钛矿相和Mn2O3相组成的二相复合体材料。电输运性质均表现出绝缘体-金属相变,ρ-T曲线高温区出现尖峰,较低温区出现"肩峰",是钙钛矿体相内双交换作用和晶界处电子自旋极化隧穿引起的电阻率共同作用的结果。MR-T表现出,在高温区出现磁电阻峰,在低温区随温度降低磁电阻持续增大,表现出低场磁电阻特征,在中间温区出现磁电阻的温度稳定性,用La0.6Dy0.1Sr0.3MnO3钙钛矿颗粒体相产生的本征磁电阻与颗粒界面效应产生的隧穿磁电阻的叠加给出解释。x=0.30的样品,0.8 T磁场下,在258 K～198 K温区,产生的磁电阻为(6.3±0.2)%。     

二相复合体La_(2/3)Ca_(1/3)MnO_3/xCuO的界面效应

用固相反应法制备二相复合体La2/3Ca1/3Mn O3/x Cu O(x=0,0.04,0.08,0.12,0.20,0.30)。用X射线衍射(XRD)图谱、扫描电子显微镜(SEM)照片检测样品的结构,通过零场冷和加场冷的电阻率-温度(ρ-T)曲线、磁电阻-温度(MR-T)曲线研究界面效应对电输运性质及磁电阻的影响。结果表明:样品形成完好的钙钛矿相和Cu O相;复合样品的颗粒比较均匀,颗粒大小约2μm,界面比较清晰;复合样品的ρ-T曲线出现双峰,x=0.04的样品电输运性质出现反常,它的电阻率既小于x=0的电阻率,也小于x=0.08的电阻率;复合样品的MR-T曲线也出现双峰,x=0.20,0.30的样品,0.8 T磁场下在50~250 K温区磁电阻不小于13.4%,实现了大温区且有较高磁电阻,有利于MR的实际应用。用影响电输运的多种因素的竞争很好地解释了界面效应。     

CuO复合对La0.80Sr0.05K0.15MnO3电输运和磁电阻的影响

用固相反应法制备了(1-x)La0.80Sr0.05K0.15MnO3/xCuO(x=0.00,0.04,0.08,0.10,0.20,0.30)二相复合体。通过X射线衍射图谱、扫描电子显微镜照片检测结构,表明形成完好的钙钛矿相和CuO相,CuO分布在钙钛矿颗粒之间,形成对钙钛颗粒的包覆。通过测量零场和加场下的电阻率-温度曲线以及磁电阻-温度曲线,研究电输运性质及磁电阻效应,结果表明,CuO复合对La0.80Sr0.05K0.15MnO3电输运和磁电阻效应影响很大。在高温区出现磁电阻峰,表现出本征磁电阻特征,在低温区随温度降低磁电阻持续增大,表现出由界面引起的隧穿磁电阻特征,总的磁电阻是本征磁电阻与隧穿磁电阻的迭加,在中间温区出现磁电阻的温度稳定性。     

La_(0.80)Sr_(0.05)Na_(0.15)MnO_3/xCuO复合体电输运机制及磁电阻的温度稳定性

用固相反应法制备了La0.80Sr0.05Na0.15MnO3/xCuO(x=0,0.05,0.10,0.15,0.20,0.30)二相复合体系,通过X射线衍射(XRD)图谱、电阻率-温度(ρ-T)曲线、ρ-T拟合曲线、磁电阻-温度(MR-T)曲线,研究了样品的电输运机制及磁电阻的温度稳定性。结果表明,在低温类金属区,电输运机制是自旋电子受单磁子散射作用,用ρ-T2拟合得很好;在较高温区MR-T曲线出现"压峰效应",是因为界面效应产生的非本征磁电阻占优势,本征磁电阻与非本征磁电阻迭加产生的磁电阻随温度变化不大;特别是x=0.05的样品,0.8 T磁场下在240 K~320K温区,磁电阻保持(9.9±0.4)%基本不随温度变化,在室温附近△T=80 K温区磁电阻的温度稳定性很好。     

钙钛矿La0.67Ca0.33Ti0.01Mn0.99O3的磁致冷性能研究

利用固相烧结的方法制备了La0.67Ca0.33Ti0.01Mn0.99O3磁致冷材料.室温XRD分析表明该材料主要由主相的正交钙钛矿结构锰氧化物和少量La2O3杂相构成.利用VSM测量了样品在磁场下随温度变化的磁化曲线(M-T曲线)和居里温度附近的等温磁化曲线(M-H曲线),通过M-H曲线的一阶导数可得到样品的居里温度Tc(139 K),从不同温度的等温磁化曲线(M-H)计算得到材料在1.5T下的最大磁熵变△SM =0.8 J.(kg·K)-1,由M2-H/M的Arrott曲线表明La0.67Ca0.33 Ti0.01Mn0.99O3相变类型属于二级相变.由于二级相变不伴随晶格体积的变化和潜热的释放,仅是磁性材料磁畴从无序-有序的连续变化,所以二级相变的磁熵变可能较小,但是由于它是个连续的变化过程,发生相变的温区较大,造成的损耗较小.Ti4+离子的掺杂取代的是原有晶格中Mn4+离子(B位)的位置,两者之间不同的离子半径使得晶格发生Jahn-Teller 畸变,同时降低了Mn4+的浓度,使得Mn4+与Mn3+离子之间的双交换作用减弱,铁磁耦合作用减小,导致居里温度降低.该材料体系由于二级相变的温度区间较大,表明材料潜在的致冷能力较强,因此具有较好的应用前景.     

改善钙钛矿材料室温下磁电阻效应的有效途径

将Ag2O与La0.67Ca0.25Sr0.08MnO3均匀混合经高温烧结后形成La0.67Ca0.25Sr0.08MnO3/xAg两相复合体系。随Ag掺入量的增加,样品的电阻率明显下降,磁化强度有小量下降,TC及电阻率的峰值温度TP没有明显变化。304K温度下,从x=0.25样品中得到最大磁电阻效应,磁电阻比约为41%,分别是La0.67Ca0.25Sr0.08MnO3和La0.67Sr0.33MnO3样品的1.6及10倍。磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。结果说明,利用离子的掺杂效应调整居里温度到室温附近,再结合金属/钙钛矿复合体系界面属性丰富的特性来制备庞磁电阻材料是提高室温磁电阻有效的途径,这对应用研究具有十分重要的意义。     

Cu的Mn位掺杂对La0.7Ca0.3MnO3磁电传输特性的影响

采用溶胶凝胶法制备了系列多晶CMR材料La0.7Ca0.3Mn1-xCuxO3(x=10%,14%,15%,16%,18%,20%).在77 K～350 K温度范围内测量了样品的电阻率及磁电阻大小.实验结果发现,系列样品在整个测温范围内均表现出绝缘相行为,未出现金属相到绝缘相的M-I转变.对系列样品的ρ-T曲线进行Inρ-T-(1/4)关系拟合,发现掺杂量为x=10%、14%两个样品在整个温区内的Inρ-T-(1/4)关系基本呈线性,掺杂量为15%、16%、18%及20%四个样品在较高温区的Inρ-T-(1/4)关系亦基本呈线性.采用Mott等人提出的小极化子VRH模型进行了解释.实验中还发现,系列样品的磁电阻在整个测温范围内基本呈现隧穿磁电阻行为,基于我们采用Monte Carlo模拟方法提出的隧穿磁电阻模型,对样品的磁电阻行为进行了解释.     

Spin Dependent Hopping in Ti Doped La0.67 Ca0.33 MnO3

A systematic investigation of the magnetic and transport properties of Ti doped La0.67Ca0.33MnO3 was reported. The Ti substitution for Mn ions results in a reduction in ferromagnetism and conductivity. The metal-insulator transition temperature is close to Curie temperature which decreases from 274 to 82 K as x increases from 0 to 0.17. The most important effect of Ti doping is to introduce spin clusters in the samples due to the distortion of local lattice and the inhomogeneous magnetic structure induced primarily by the random distribution of Mn ions. A maximum magnetoresistance ratio as large as 90% in 1 T at 122 K was obtained for the sample with x =0. 055, which is four times larger than that obtained for LCMO sample at 272 K. There is a remarkable field-history dependent MR in the cooling process for the doped samples while such phenomenon disappears in the warming run. The resistivity follows well the variable range hopping behavior in paramagnetic state. Both the size effect and spin dependent hopping of carriers between the spin clusters should be considered in this system.     

Giant Low-Field Magnetoresistance in Polycrystalline La2/3Ca1/3Mn1-xCuxO3 Sintered at 1100 ℃

The La2/3Ca1/3Mn1-xCuxO3 (0≤x＜6%) samples were prepared by sol-gel method. Transport properties, conductive mechanism and low-field magnetoresistance (MR0) were investigated. It is found that conductive mechanism is described by Mott′s variable-range hopping and the MR0 near the insulator-metal transition temperature (Tp) increases from 2% to 80% with x from 0 to 4% for a low field of 0.3 T. The experiment also shows that the intergrain magnetoresistance is largely improved. The results indicate that a proper amount of Cu doping can substantially improve magnetoresistance effects.     

Magnetic and Magnetoresistance Properties in （La0.67Ca0.33MnO3）x／（ZrO2）1-x Composite System

Inrecentyears,muchattentionhasbeenpaidto therare earthdopedmanganitesduetotheirextraor dinarymagneticandtransportproperties.Onone hand,itisbecausetheirabundantelectronicstructure andmagneticproperties[1];ontheotherhand,they exhibitcolossalmagnetoresistan…     

Transport Properties of Rare Earth Manganese Oxide La_(0.67)Ca_(0.33)Mn_(1-x)Fe_xO_3

CompoundsofthetypeLn1-xAxMnO3(Ln =rareearth ,A =Ca ,Ba ,Sr ,etc .)havebeenthepopularsubjectsofextensiveresearchrecently ,mainlyduetotheexistenceofcolossalmagnetoresistance(CMR ) [1～ 3] .Atroomtemperature ,theperovskitecompoundLnMnO3isantiferromagneticinsulatorwhereMnistrivalent .ThepartialsubstitutionoftrivalentLnionswithdivalentionssuchasCa ,Ba ,Sr ,andPbetc .yieldsanewcompoundexhibitingstrongferro magnetismandhighmetallicconductivity .Thetrans portpropertyinthesecompoundscanbepartly…     

Fex-C1-x/Si颗粒膜的巨磁电阻效应

利用激光脉冲沉积（PLD）方法制备了沉积于硅基片上的掺杂过渡金属的非晶碳膜结构Fex-C1-x/Si。Fex-C1-x/Si的磁电阻（MR）可正可负，随温度而变化。当温度T〈258K时，Fe0．011-C0.989／Si的MR为负值；当258K〈T〈340K时，该材料的MR为正值，在室温磁场为1T时，该材料的正MR可以大于20％。且在不同的温度范围中，该材料的MR和外加磁场的依存关系呈现出不同的特点：在T=280和300K时，当磁场小于1T时，MR随磁场的增加而快速增加，之后随磁场的继续增加MR增加开始变得缓慢；在T=350K时，MR近似以磁场的B^1.5。的规律变化；而在T=30K时，MR为负值且其大小随磁场的增加而减小。利用双通道模型对该MR效应进行了初步解释。     

Influence of the substitution of Sm, Gd, and Dy for La in La0.7Sr0.3MnO3 on its magnetic and electric properties and strengthening effect on room-temperature CMR

A series of La0.7-xSmxSr0.3MnO3, La0.7-xGdxSr0.3MnO3, and La0.7-xDyxSr0.3MnO3 (x=0.00, 0.10, 0.20, 0.30) samples were prepared by the solid-state reaction method. The influence of the substitution of Sm, Gd, and Dy for La on the magnetic and electric properties and on the magnetoresistance (MR) was studied through measurements of M-T curves and p-T curves. The results showed that: lattice distortion in-duced by substitution of Sm, Gd, and Dy for La and extra magnetism of substitution had great influence on the magnetic and electric proper-ties of perovskite manganites; substitution of magnetic rare earth element for La was an effective way to change Curie temperature and to strengthen MR in perovskite manganites; and appropriate substitution proportion would generate large MR near room temperature.     

Extraordinary Transport Behaviors of La0.67Sr0.33Mn1-x Crx O3 (0.00≤ x ≤0.30)

M-T curves, ρ-T curves and MR-T curves of La0.67Sr0.33Mn1-xCrxO3(0.00≤ x ≤0.30) were studied. Experimental results indicate that the substitution of Cr on Mn sites is impotent in driving TC, but with an increase of Cr content, there appear two peaks in resistivity and MR response, thus the temperature range of CMR response is significantly broadened. The extraordinary transport behavior and the abnormal CMR effect could be the results of coexistence and competition of Mn3 -O-Mn4 and Mn3 -O-Cr3 channels.     

La1-xNaxMnO3的磁电性质研究

采用固相反应法制备了La1-xNaxMnO3(x=0.05,0.15,0.33)多晶样品。通过测量XRD(X射线衍射)谱、R-T(电阻-温度)曲线、M-T(磁化强度-温度)曲线和ESR(电子自旋共振)曲线,研究了La位Na+离子替代对体系的电性和磁性的影响。实验结果表明:体系伴随绝缘体-金属相变出现顺磁-铁磁相变,随着La位Na+离子替代量的增加,样品的电阻值先减小后增大,磁化强度先增大后减小;随着La位Na+离子替代量的增加,居里温度单调升高;居里温度附近温区,顺磁相中存在着铁磁团簇,铁磁相中也存在顺磁成分,即出现了磁相分离;少量的Na+离子替代(x=0.05)样品,反铁磁与铁磁相共存,低温下表现为自旋倾斜玻璃态特征,较高Na+离子替代样品的自旋倾斜玻璃态遭到破坏。体系磁电性质的变化来源于Na+离子替代引起的晶体晶格结构的变化、容忍因子t的变化和Mn3+/Mn4+离子比值的变化。     

Structure and Transport Properties of La0.67Ca0.33Mn1-xAlxO3

The effects of Al ion doping on the Mn site were studied for the colossal magnetoresistance material La0.67Ca0.33MnO3. It is found that the volume of the crystal cell decreases monotonically when the population of Al3 increases across the entire doping range. As the Al3 population increases, the resistance of the material rises rapidly, while the insulator-metal transition temperature TIM decreases linearly. At small Al3 dosage, a thermal activation model properly describes the transport properties at T>TIM, while a metallic model is more suitable at T相似文献