The beam divergence of an indium LMIS at a distance of 50 μm as determined by plasma diagnostic measurements

The current-dependent beam divergence at a distance of 50 μm from an indium-liquid metal ion source is derived from experimental data obtained by measuring the beam spread with a 3D Plasma diagnostic system at a distance of 10 cm from the needle tip. The observed relationship between emission current and beam divergence in vicinity of the emitting needle is used to design a focusing electrode for a field-emission electric propulsion thruster operating at currents up to 150 μA. Another application involves focused ion beam columns which may choose to forego a beam-limiting aperture, such as LMIS-based rapid machining tools with large beam currents.     

The assessment of microscopic charging effects induced by focused electron and ion beam irradiation of dielectrics

Energetic beams of electrons and ions are widely used to probe the microscopic properties of materials. Irradiation with charged beams in scanning electron microscopes (SEM) and focused ion beam (FIB) systems may result in the trapping of charge at irradiation induced or pre-existing defects within the implanted microvolume of the dielectric material. The significant perturbing influence on dielectric materials of both electron and (Ga(+)) ion beam irradiation is assessed using scanning probe microscopy (SPM) techniques. Kelvin Probe Microscopy (KPM) is an advanced SPM technique in which long-range Coulomb forces between a conductive atomic force probe and the silicon dioxide specimen enable the potential at the specimen surface to be characterized with high spatial resolution. KPM reveals characteristic significant localized potentials in both electron and ion implanted dielectrics. The potentials are observed despite charge mitigation strategies including prior coating of the dielectric specimen with a layer of thin grounded conductive material. Both electron- and ion-induced charging effects are influenced by a delicate balance of a number of different dynamic processes including charge-trapping and secondary electron emission. In the case of ion beam induced charging, the additional influence of ion implantation and nonstoichiometric sputtering from compounds is also important. The presence of a localized potential will result in the electromigration of mobile charged defect species within the irradiated volume of the dielectric specimen. This electromigration may result in local modification of the chemical composition of the irradiated dielectric. The implications of charging induced effects must be considered during the microanalysis and processing of dielectric materials using electron and ion beam techniques.     

A new approach to gas field ion sources

A new approach to gas field ion sources is described. It is based on a structure made by inserting a field emission tip inside a small diameter tube. The tube supplies gas to the tip from a high-pressure chamber into a high-vacuum chamber where ionization takes place. Comparison of projection electron and ion micrographs shows that ionization results from a field ionization process taking place at the very end of the tip. Emission currents in the 10nA range, for a few kV emission voltages, are obtained with various gases including neon, air and hydrogen. Lifetime experiments with H(2) show stable emission for days.     

Ultra fine finishing of diamond tools by ion beams

The principles of ion beam machining and its apparatus are described, and several examples are given of ultra fine forming or sharpening diamond tools by ion beams. Problems, such as a sub-micrometre tip radius or elliptical tips are discussed, and it is concluded that ion beam machining combined with mechanical pre-finishing can be useful for forming or sharpening diamond tools.     

A particle-in-cell Monte Carlo code for electron beam ion source simulation

FAR-TECH, Inc., has developed a particle-in-cell Monte Carlo code (EBIS-PIC) to model ion motions in an electron beam ion source (EBIS). First, a steady state electron beam is simulated by the PBGUNS code (see http://far-tech.com/pbguns/index.html). Then, the injected primary ions and the ions from the background neutral gas are tracked in the trapping region using Monte Carlo method. Atomic collisions and Coulomb collisions are included in the EBIS-PIC model. The space charge potential is updated by solving the Poisson equation each time step. The preliminary simulation results are presented and compared with BNL electron beam test stand (EBTS) fast trapping experiments.     

Particle‐induced x‐ray analysis using focused ion beams

In addition to the production of secondary electrons and secondary ions, characteristic x‐ray emission may also result from ion/solid interactions and is the basis for the well‐known analysis technique referred to as particle‐induced x‐ray emission. Characteristic x‐rays may be emitted by either bombardment by MeV protons or heavy ions of a few keV. The advantage to heavy ions is that the x‐ray yield is confined to the region near the surface defined by the collision cascade. An advantage of heavy ion‐induced x‐ray emission over electron‐induced x‐ray emission is that the Bremsstrahlung is potentially orders of magnitude lower. Thus, ion‐induced x‐ray spectra may provide for superior peak‐to‐noise ratios, and there‐fore, offers trace element sensitivity compared with elec‐tron‐induced x‐ray emission. In addition, the near surface ion/solid interactions also allow for the possibility of surface analysis or depth profiling. A Dual Beam instrument was used to collect focused ion beam‐induced x‐ray (FIBIX) spectra. The acquisition of characteristic x‐rays from targets via FIBIX is demonstrated and compared with scanning electron microscopy‐induced x‐ray energy dispersive spectroscopy spectra and is consistent with the theory described above.     

Multiscale iterative voting for differential analysis of stress response for 2D and 3D cell culture models

Focused ion beam-scanning electron microscope (FIB-SEM) tomography is a powerful application in obtaining three-dimensional (3D) information. The FIB creates a cross section and subsequently removes thin slices. The SEM takes images using secondary or backscattered electrons, or maps every slice using X-rays and/or electron backscatter diffraction patterns. The objective of this study is to assess the possibilities of combining FIB-SEM tomography with cathodoluminescence (CL) imaging. The intensity of CL emission is related to variations in defect or impurity concentrations. A potential problem with FIB-SEM CL tomography is that ion milling may change the defect state of the material and the CL emission. In addition the conventional tilted sample geometry used in FIB-SEM tomography is not compatible with conventional CL detectors. Here we examine the influence of the FIB on CL emission in natural diamond and the feasibility of FIB-SEM CL tomography. A systematic investigation establishes that the ion beam influences CL emission of diamond, with a dependency on both the ion beam and electron beam acceleration voltage. CL emission in natural diamond is enhanced particularly at low ion beam and electron beam voltages. This enhancement of the CL emission can be partly explained by an increase in surface defects induced by ion milling. CL emission enhancement could be used to improve the CL image quality. To conduct FIB-SEM CL tomography, a recently developed novel specimen geometry is adopted to enable sequential ion milling and CL imaging on an untilted sample. We show that CL imaging can be manually combined with FIB-SEM tomography with a modified protocol for 3D microstructure reconstruction. In principle, automated FIB-SEM CL tomography should be feasible, provided that dedicated CL detectors are developed that allow subsequent milling and CL imaging without manual intervention, as the current CL detector needs to be manually retracted before a slice can be milled. Due to the required high electron beam acceleration voltage for CL emission, the resolution for FIB-SEM CL tomography is currently limited to several hundreds of nm in XY and up to 650 nm in Z for diamonds. Opaque materials are likely to have an improved Z resolution, as CL emission generated deeper in the material is not able to escape from it.     

Magnetic field emission gun with zirconiated emitter

A magnetic-field-superimposed field emission gun with low aberrations and equipped with a zirconiated tungsten emitter has been developed for applications where very stable high probe currents are required. It has been tested on a conventional electron microscope at 10 kV and on an electron beam testing system at 1 kV. Probe current i = 250 nA in a probe size d = 0.4 μm is obtained at 10 kV; at 1 kV the resolution is 0.1 μm with i = 5 nA, and 0.4 μm with i = 30 nA. For these probe currents, the spatial broadening effect due to electron–electron interactions in the beam is the preponderant factor limiting the probe size.     

Surface plasma source with anode layer plasma accelerator

Proposed plasma generation system can be used for high current negative ion beam production and for directed deposition by flux of sputtered neutrals and negative ions. The main mechanism of negative ion formation in surface plasma sources is the secondary emission from low work function surface bombarded by a flux of positive ion or neutrals. The emission of negative ions is enhanced significantly by introducing a small amount of cesium or other substance with low ionization potential. In the proposed source are used positive ions generated by Hall drift plasma accelerator (anode layer plasma accelerator or plasma accelerator with insulated channel, with cylindrical or race track configuration of emission slit). The target-emitter is bombarded by the ion beam accelerated in crossed ExB fields. Negative ions are extracted from the target surface with geometrical focusing and are accelerated by negative voltage applied between emitter and plasma, contacting with the plasma accelerator. Hall drift ion source has a special design with a space for passing of the emitted negative ions and sputtered particles through the positive ion source.     

Imaging and nanofabrication with the helium ion microscope of the Van Leeuwenhoek Laboratory in Delft

Although helium ion microscopy (HIM) was introduced only a few years ago, many new application fields are emerging. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample material at and just below its surface. In particular, the HIM secondary electron signal stems from an area that is extremely well localized around the point of incidence of the primary beam. This makes the HIM well suited for both high-resolution imaging and high-resolution nanofabrication. Another advantage in nanofabrication is the low ion backscattering fraction, which leads to a weak proximity effect. The subnanometer probe size and the unique beam-materials interactions have opened new areas of research. This review presents a selection of studies conducted on a single instrument. The selection encompasses applications ranging from imaging to nanofabrication and from fundamental academic research to applied industrial developments.     

An integrated charge exchange recombination spectroscopy/beam emission spectroscopy diagnostic for Alcator C-Mod tokamak

A novel integrated charge exchange recombination spectroscopy (CXRS)/beam emission spectroscopy (BES) system is proposed for C-Mod, in which both measurements are taken from a shared viewing geometry. The supplementary BES system serves to quantify local beam densities and supplants the common calculation of beam attenuation. The new system employs two optical viewing arrays, 20 poloidal and 22 toroidal channels. A dichroic filter splits the light between two spectrometers operating at different wavelengths for impurity ion and beam neutrals emission. In this arrangement, the impurity density is inferred from the electron density, measured BES and CXRS spectral radiances, and atomic emission rates.     

High-aspect ratio metal tips attached to atomic force microscopy cantilevers with controlled angle, length, and radius for electrostatic force microscopy

We demonstrate a method to fabricate a high-aspect ratio metal tip attached to microfabricated cantilevers with controlled angle, length, and radius, for use in electrostatic force microscopy. A metal wire, after gluing it into a guiding slot that is cut into the cantilever, is shaped into a long, thin tip using a focused ion beam. The high-aspect ratio results in considerable reduction of the capacitive force between tip body and sample when compared to a metal coated pyramidal tip.     

Lensless electron reflection microscopy using a coaxial point-source structure

A lensless image of the surface of a crystal is obtained by the reflection on this surface of a low-energy electron beam originated from a point source integrated in a coaxial structure. The point source is a sharp field emission tip and a free propagation of reflected electrons results from the shielding of the tip voltage provided by the coaxial structure. Images are obtained for an incidence angle between 3 and 45 degrees and for nA incident currents with a kinetic energy down to 40 V. On silicon surfaces a magnification up to a few thousands and a spatial resolution of 100 nm are demonstrated.     

考虑附加质量的中心刚体-柔性悬臂梁系统的动力特性研究

对考虑附加质量的中心刚体-柔性悬臂梁系统的动力特性进行研究.首先采用Hamilton原理和有限元离散化方法,在计入柔性梁由于横向变形而引起的轴向变形的二阶耦合量的条件下,给出该系统的刚柔耦合动力学方程(即一次近似耦合模型),以及相应的非惯性系下的动力学模型,然后通过数值仿真对系统的动力特性进行研究.仿真结果显示,即使是小的附加质量也会对系统动力特性产生重要影响,附加质量使得梁的响应幅值变大和响应频率降低,且会影响柔性梁和中心刚体的终点位置.附加质量的影响随系统大范围运动的角速度的增大而变大.当系统大范围运动为低速时,传统的混合坐标模型仍然会导致较大误差;当系统大范围运动为高速时,传统的混合坐标模型存在失效的可能.     

散射式太赫兹扫描近场光学显微技术研究

基于散射式近场探测原理,设计并搭建了散射式太赫兹扫描近场光学显微系统(THz s-SNOM),实现了纳米量级空间分辨率的太赫兹近场显微成像测量。该系统以输出频率范围为0.1~0.3THz的太赫兹倍频模块为发射源,通过纳米探针的针尖产生纳米光源与样品相互作用,并将样品表面的倏逝波转化为可在远场测量的辐射波。通过探针逐点扫描样品表面,同时获得了样品表面的形貌图和太赫兹近场显微图。该系统的显微分辨率取决于探针针尖的曲率半径,而与太赫兹波的波长无关。使用该系统测量了金薄膜/硅衬底样品和石墨烯样品的近场显微图,结果表明,近场显微的空间分辨率优于60nm,波长与空间分辨率之比高达λ/26000。     

Effect of beam limiting aperture and collector potential on multi-element focused ion beams

A compact microwave driven plasma based multi-element focused ion beam system has been developed. In the present work, the effect of reduced beam limiter (BL) aperture on the focused ion beam parameters, such as current and spot size, and a method of controlling beam energy independently by introducing a biased collector at focal point (FP) are investigated. It is found that the location of FP does not change due to the reduction of BL aperture. The location of FP and beam size are found to be weakly dependent on the collector potential in the range from -8 kV to -18 kV.     

A source of broad homogeneous beams of low-energy (∼0.5 keV) gas ions

A source of gas ions (argon, oxygen, nitrogen, etc.), the operating principle of which is based on the use of a glow discharge in an electrode system of a wide-aperture hollow cathode and anode in a magnetic field, is described. The exit aperture diameter of the hollow cathode, increased up to a size close to the ion beam diameter (10 cm), ensures the uniform ion emission of the plasma generated in the discharge region near the anode. A decreased angular divergence or increased ultimate ion-beam current density is achieved by a change in the potential drop in the space charge sheath between the plasma and the ion optics. The source generates broad (50 cm²) slightly diverging (ω/2∼3°–5°) ion beams with energies of 300–1000 eV at a beam current density of ∼0.5 mA/cm².     

Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation

An ion beam alignment system has been developed in order to realize real-time scanning tunneling microscope (STM) observation of "dopant-ion" irradiation that has been difficult due to the low emission intensity of the liquid-metal-ion-source (LMIS) containing dopant atoms. The alignment system is installed in our original ion gun and STM combined system (IG/STM) which is used for in situ STM observation during ion irradiation. By using an absorbed electron image unit and a dummy sample, ion beam alignment operation is drastically simplified and accurized. We demonstrate that sequential STM images during phosphorus-ion irradiation are successfully obtained for sample surfaces of Si(111)-7x7 at room temperature and a high temperature of 500 degrees C. The LMIS-IG/STM equipped with the developed ion beam alignment system would be a powerful tool for microscopic investigation of the dynamic processes of ion irradiation.     

Poloidal beam emission spectroscopy system for the measurement of density fluctuations in Large Helical Device

A system of beam emission spectroscopy (BES) for density fluctuation measurements having the sightlines passing through the plasma in the poloidal direction was developed in the Large Helical Device (LHD). Even though the angle between the beam and the sightline is slightly larger than a right angle, Doppler-shifted beam emission can be distinguished from background emission because of the high energy (120-170 keV) of the neutral beam for heating with negative ion sources. Spatial resolution is about 0.1-0.2 in the normalized radius. Compared with the prototype BES system with toroidal sightlines, the BES system with poloidal sightlines showed improved spatial resolution.     

Compact electrostatic beam optics for multi-element focused ion beams: simulation and experiments

Electrostatic beam optics for a multi-element focused ion beam (MEFIB) system comprising of a microwave multicusp plasma (ion) source is designed with the help of two widely known and commercially available beam simulation codes: AXCEL-INP and SIMION. The input parameters to the simulations are obtained from experiments carried out in the system. A single and a double Einzel lens system (ELS) with and without beam limiting apertures (S) have been investigated. For a 1 mm beam at the plasma electrode aperture, the rms emittance of the focused ion beam is found to reduce from ～0.9 mm mrad for single ELS to ～0.5 mm mrad for a double ELS, when S of 0.5 mm aperture size is employed. The emittance can be further improved to ～0.1 mm mrad by maintaining S at ground potential, leading to reduction in beam spot size (～10 μm). The double ELS design is optimized for different electrode geometrical parameters with tolerances of ±1 mm in electrode thickness, electrode aperture, inter electrode distance, and ±1° in electrode angle, providing a robust design. Experimental results obtained with the double ELS for the focused beam current and spot size, agree reasonably well with the simulations.