Growth of ZnIn2Te4 thin films

Bulk ZnIn₂Te₄ was prepared by melting the constituent elements in stoichiometric proportions. ZnIn₂Te₄ thin films were then grown by the flash evaporation technique. The bulk material and the films were characterized by X-ray diffraction and transmission electron microscopy. The effects of substrate temperature on the structural properties and the electrical resistivity of the films have been studied. It was found that single-phase polycrystalline stoichiometric films could be grown in the substrate temperature range 423 ⩽ T_s ⩽ 523 K and the films deposited at 523 K had the minimum electrical resistivity. The implications are discussed.     

Growth of AgGaSe2 thin films

Bulk AgGaSe₂ was prepared by melting the pure constituents in stoichiometric proportions. Thin films of this material were grown by a flash evaporation technique. The bulk material and the films were characterised by X-ray and electron microscope techniques. The effects of substrate temperature on the structural properties, compositional analysis and electrical resistivity of films have been studied. It was found that polycrystalline stoichiometric films of AgGaSe₂ can be grown in the substrate temperature range of 423–523 K and the films deposited at 523 K have a minimum electrical resistivity. The implications are discussed.     

Optimization of growth conditions for SnSe2 thin films

Bulk SnSe₂ was prepared by melting the constituents in stoichiometric proportions and thin films of this material were grown by a flash evaporation technique. X-ray and electron diffraction methods were used for characterization of the bulk material and the films. The effect of substrate temperature on the structural properties, composition and electrical resistivity of the films have been studied. It was found that single-phase polycrystalline stoichiometric films of SnSe₂ can be grown in the substrate temperature range 398 to 623 K. The films deposited at 523 K had the minimum electrical resistivity.     

Electrical properties of polycrystalline Sb2Te3 films

Single-phase polycrystalline stoichiometric films of Sb₂Te₃ with different thicknesses were prepared on glass substrates by a flash evaporation technique at constant substrate temperature of 423 K. The electrical properties of these films, such as resistivity, Hall mobility, carrier concentration and activation energy, were determined for different film thicknesses. The optical absorption of these films was also studied. The implications are discussed.     

Electrical and optical properties of Indium sesquitelluride (In2Te3) thin films

Indium sesquitelluride (In₂Te₃) thin films were grown on glass substrates using a flash evaporation technique. The nature of contact phenomena of Ag, Sn, In, Zn, Al-(p) In₂Te₃ junctions had been investigated. Ag, Sn, In and Zn metals were found to provide ohmic contact for In₂Te₃ thin films. The variation of DC-electrical resistivity of In₂Te₃ thin films with temperature was studied at different substrate temperatures. The optical measurements revealed that the flash evaporated In₂Te₃ thin films possessing direct energy band-gap. The variation of optical energy gap with substrate temperature was investigated. Film thickness, substrate temperature, composition and crystallinity were found to determine the optimization of electrical and optical properties of In₂Te₃ thin film.     

Electrical properties of AgGaSe2 films

Single phase polycrystalline films of AgGaSe₂ with different thicknesses are prepared on glass substrates by flash evaporation technique, at a substrate temperature of 523 K. The electrical properties of these films such as resistivity. Hall mobility, carrier concentration and activation energy are determined with different thicknesses of the films. The optical absorption in these films is studied in the energy range 1.3-1.9 eV and found to possess a direct band gap with an energy gap of 1.61 eV for a AgGaSe₂ film having thickness 250 nm. The implications are discussed.     

Effect of substrate temperatures on the electrical resistivity of thermally evaporated Mn thin films

Resistivity measurements have been performed on three samples of Mn thin films from 300 to 1.4 K using the van der Pauw four probe technique. The films were grown by thermal evaporation onto glass substrates held at 523, 323 and 77 K, respectively in a bell jar held at 6 × 10⁻⁶ Torr. The resistivity-temperature results of the three specimens reveal a variety of low temperature behaviours. A behaviour typical of the bulk α-Mn is obtained with the film grown at a substrate temperature of 523 K whilst with the film grown at a substrate temperature of 323 K, the resistivity tends to a saturation at low temperatures exhibiting a behaviour reminiscent of Kondo scattering. The resistivity-temperature behaviour of the sample held at a substrate temperature of 77 K may be regarded as typical of a metallic alloy glass with a negative temperature coefficient of resistivity at high temperatures and this turns to a T² dependence of resistivity at very low temperatures.     

Copper nitride films deposited by dc reactive magnetron sputtering

Copper nitride (Cu₃N) films were deposited on glass substrates by sputtering of copper target under various substrate temperatures in the range 303–523 K using dc reactive magnetron sputtering. The substrate temperature highly influenced the structural, mechanical, electrical and optical properties of the deposited films. The X-ray diffraction measurements showed that the films were of polycrystalline nature and exhibit preferred orientation of (111) phase of Cu₃N. The microhardness of the films increased from 2.7 to 4.4 GPa with the increase of substrate temperature from 303 to 473 K thereafter decreased to 4.1 GPa at higher temperature of 523 K. The electrical resistivity of the films decreased from 8.7 × 10⁻¹ to 1.1 × 10⁻³ Ωcm and the optical band gap decreased from 1.89 to 1.54 eV with the increase of substrate temperature from 303 to 523 K respectively.     

Structural,optical, and electrical properties of flash-evaporated copper indium diselenide thin films

Copper indium diselenide (CuInSe₂) compound was synthesized by reacting its elemental components, i.e., copper, indium, and selenium, in stoichiometric proportions (i.e., 1:1:2 with 5% excess selenium) in an evacuated quartz ampoule. Structural and compositional characterization of synthesized pulverized material confirms the polycrystalline nature of tetragonal phase and stoichiometry. CuInSe₂ thin films were deposited on soda lime glass substrates kept at different temperatures (300–573 K) using flash evaporation technique. The effect of substrate temperature on structural, morphological, optical, and electrical properties of CuInSe₂ thin films were investigated using X-ray diffraction analysis (XRD), atomic force microscopy (AFM), optical measurements (transmission and reflection), and Hall effect characterization techniques. XRD analysis revealed that CuInSe₂ thin films deposited above 473 K exhibit (112) preferred orientation of grains. Transmission and reflectance measurements analysis suggests that CuInSe₂ thin films deposited at different substrate temperatures have high absorption coefficient (~10⁴ cm⁻¹) and optical energy band gap in the range 0.93–1.02 eV. Results of electrical characterization showed that CuInSe₂ thin films deposited at different substrate temperatures have p-type conductivity and hole mobility value in the range 19–136 cm²/Vs. Variation of energy band gap and resistivity of CuInSe₂ thin films deposited at 523 K with thickness was also studied. The temperature dependence of electrical conductivity measurements showed that CuInSe₂ film deposited at 523 K has an activation energy of ~30 meV.     

Thickness and temperature effects on electrical resistivity of (Bi0.5Sb0.5)2Te3 thin films

Thin films of (Bi_0.5Sb_0.5)₂Te₃ of different thickness were deposited on glass substrate by the flash evaporation method in a vacuum of 1 × 10^− 5 Torr. X-ray diffraction and transmission electron microscope analysis indicates that these films are polycrystalline even in the as-deposited state and the post-deposition annealing leads to grain growth. Electrical resistivity studies were carried out on these films as a function of temperature (300– 450 K) and film thickness (450–2000 Å). Temperature dependence of electrical resistivity shows that (Bi_0.5Sb_0.5)₂Te₃ films are semiconducting. It is found that electrical conduction activation energy decreases with increase of film thickness and this observation is explained based on the Slater model. Thickness dependence of electrical resistivity is analyzed using the effective mean free path model of size effect with perfect diffuse scattering. This analysis leads to the evaluation of the important physical parameters i.e., mean free path and bulk resistivity of hypothetical bulk.     

Thickness dependent properties of nickel oxide thin films deposited by dc reactive magnetron sputtering

Nickel oxide thin films of various thicknesses were grown on glass substrates by dc reactive magnetron sputtering technique in a pure oxygen atmosphere with sputtering power of 150 W and substrate temperature of 523 K. Crystalline properties of NiO films as a function of film thickness were investigated using X-ray diffraction. XRD analysis revealed that (200) is the preferred orientation and the orientation of the films changed from (200) to (220) at film thickness of 350 nm. The maximum optical transmittance of 60% and band gap of 3.82 eV was observed at the film thickness of 350 nm. The lowest electrical resistivity of 5.1 Ω cm was observed at a film thickness of 350 nm, thereafter resistivity increases with film thickness.     

Electrical and optical properties of In2Se3 thin films

In₂Se₃ thin films were grown with good stoichiometry at a substrate temperature around 460 K in the α phase and were shown to remain in the β phase above 480 K. The Hall coefficient and the d.c. conductivity of polycrystalline In₂Se₃ films grown on Pyrex and mica substrates were studied in the temperature range 77–530 K. After thermal treatment above 473 K of the α phase thin film, the electrical resistivity decreased and the sample remained in an irreversible phase. This is explained in terms of structural changes at high temperatures. The mobility behaviour of the β phase annealed thin films is illustrated. We use the Petritz barrier model to explain the activation energy of the mobility as due to the grain boundaries of the polycrystallites.The optical properties (refractive index and absorption coefficient) are also reported. The direct band gaps of In₂Se₃ thin films are 1.43 eV and 1.55 eV for the α phase and β phase respectively. These values are obtained from transmission measurements and are confirmed through photoconductivity measurements.     

Effect of structural transformation on the electrical properties for Ge1Sb2Te4 thin film

Dependence of electrical properties of phase change Ge₁Sb₂Te₄ thin film on structural transformation was investigated. The electrical resistivity of the film decreases with increasing annealing temperature with a steep drop at ∼ 230 °C (the second crystallization temperature), at which the structure of Ge₁Sb₂Te₄ changes from face-centered cubic to trigonal state. The steep drop of resistivity at the second crystallization temperature is mainly due to the increase of hole density within the p-type film, according to Hall measurement. The crystallization process has been followed by in situ resistance measurement at various annealing temperatures. Transmission electron microscope and atomic force microscope were also employed to study the film.     

Growth and properties of CuInS2 thin films

Single phase copper indium disulphide (CuInS₂) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to ben-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a substrate temperature of 523 K at a molybdenum source temperature of 1873 K.     

Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputtering

Antimony telluride (Sb₂Te₃) thin films were deposited on silicon substrates at room temperature (300 K) by radio frequency magnetron sputtering method. The effects of annealing in N₂ atmosphere on their thermoelectric properties were investigated. The microstructure and composition of these films were characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction, respectively. The electrical transport properties of the thin films, in terms of electrical conductivity and Seebeck coefficient were determined at room temperature. The carrier concentration and mobility were calculated from the Hall coefficient measurement. Both of the Seebeck coefficient and Hall coefficient measurement showed that the prepared Sb₂Te₃ thin films were p-type semiconductor materials. By optimizing the annealing temperature, the power factor achieved a maximum value of 18.02 μW cm^?1 K^?2 when the annealing temperature was increased to 523 K for 6 h with a maximum electrical conductivity (1.17 × 10³ S/cm) and moderate Seebeck coefficient (123.9 μV/K).     

Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target

Bi₂Se₃ thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature −400 °C). The effects of the substrate temperature on the structural and electrical properties of the Bi₂Se₃ films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 °C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 °C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 × 10⁻³ to 3 × 10⁻⁴ Ω cm as the substrate temperature was increased from room temperature to 400 °C.     

Electrical conduction and transmission electron microscopy studies of CdSe0.8Te0.2 thin films

Electrical resistance of CdSe_0.8Te_0.2 thin films were found to be dependent on various film parameters such as substrate temperature, film thickness, deposition rate and post-deposition heat treatment in different environments. A decrease in film resistivity was observed for thicker films and for those heat treated in vacuum. Films deposited at higher substrate temperatures and faster rates showed an increase in film resistivity. A spectrum of activation energies was observed in the films which fell within either of the activation energies observed in CdSe or CdTe films. Films heated in an oxygen environment showed an increase in film resistivity with a different activation energy. Transmission electron microscopy (TEM) of the films showed an improvement in crystallinity with increasing film thickness and substrate temperature, and a reduction in crystallinity with increasing deposition rate.     

Annealing effect on the structural,electrical and 1/f noise properties of Mn–Co–Ni–O thin films

Thin films of Mn_1.4Co_1.0Ni_0.6O₄ (MCN) spinel oxide are grown by radio frequency (RF) magnetron sputtering method on amorphous Al₂O₃ substrate. We investigate the annealing effect on the micro structural and electrical properties of RF sputtered MCN films. It is found that the crystallinity of MCN film is improved with increasing annealing time at 750 °C, and the annealed films present excellent cubic spinel (220) preferred orientation in X-ray diffraction patterns. Comparing to as-sputtered thin film, the annealed films show a decrease of 60 to 70 % in resistivity at 300 K. The annealed samples with post annealing time longer than 18 min acquire a negative temperature coefficient of resistance of about ?3.73 %K^?1 and resistivity of about 210–220 Ω cm at 300 K. 1/f noise of MCN films are also studied and the Hooge’s parameters (γ/n) are calculated. After annealing for 18 to 90 min, the γ/n values of the films are on the order of 10^?21 cm³, which ranks about two orders lower than that of amorphous silicon.     

Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering

Thin films of copper aluminum oxide (CuAlO₂) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial pressures in the range 1 × 10⁻⁴–3 × 10⁻³ mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied. p-Type CuAlO₂ films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm² V⁻¹ s⁻¹ and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10⁻⁴ mbar.     

Growth of pseudocubic perovskite-type SrRuO3 thin films on quartz substrate using pulsed laser deposition method

Strontium ruthenium oxide (SrRuO₃) thin films have been grown using pulsed laser deposition technique on silicon, Pt coated silicon and quartz substrates. The effect of substrate temperatures on the structural, microstructure, and electrical properties of the SrRuO₃ films on quartz substrate has been investigated using XRD, SEM, AFM and four-probe method, respectively. The lowest resistivity at room temperature for the SrRuO₃ thin film on quartz substrate has been achieved at substrate temperature of 700 °C. Furthermore, the comparisons of SrRuO₃ thin films deposited on various substrates have been done with respect to structural, microstructural and electrical properties. XRD patterns exhibit that all thin films are a single phase, pseudo-cubic perovskite structure. Study of surface morphology shows that grain size and roughness varies with respect to substrate. It is observed that SrRuO₃ thin films yield larger grain size and root mean square roughness on Pt/Si substrate. Investigation of electrical properties shows that SrRuO₃ thin films can serve the purpose of the bottom electrode in dielectric and ferroelectric devices.