真空键合技术制作三层结构的MEMS器件的研究

采用真空键合技术，成功地将表面具有深度不同的硅槽或框架结构的硅圆片与另外两个硅圆片贴合形成三层夹心结构，经高温退火处理，得到一种粘合牢固的硅“三明治”体。这种“三明治”体的上下两个硅片仍可进行IC加工，为MEMS传感部分和测试电路的三维一体化集成打下了坚实的基础。     

真空键合技术制作三层结构的MEMS器件的研究

采用真空键合技术 ,成功地将表面具有深度不同的硅槽或框架结构的硅圆片与另外两个硅圆片贴合形成三层夹心结构 ,经高温退火处理 ,得到一种粘合牢固的硅“三明治”体。这种“三明治”体的上下两个硅片仍可进行IC加工 ,为MEMS传感部分和测试电路的三维一体化集成打下了坚实的基础     

Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues

This paper reviews wafer-level hermetic packaging technology using anodic bonding from several reliability points of view. First, reliability risk factors of high temperature, high voltage and electrochemical O₂ generation during anodic bonding are discussed. Next, electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed. The reliability of both hermetic sealing and electrical feedthrough must be simultaneously satisfied. In the last part of this paper, a new wafer-level MEMS packaging material, anodically-bondable low temperature cofired ceramic (LTCC) wafer, is introduced, and its reliability data on hermetic sealing, electrical interconnection and flip-chip mounting on a printed circuit board (PCB) are described.     

铝锗键合技术及其在MEMS加速度计中的应用

本文提出了一种可与CMOS工艺兼容的MEMS晶圆级铝锗键合工艺。根据铝锗共晶键合的特点,设计了键合工艺流程,并通过对键合工艺(包括键合温度、键合时间、键合压强)安排多次试验,获得了优化的铝锗共晶键合工艺条件,并成功应用于MEMS加速度计产品的制作。     

应用于微系统封装的激光局部加热键合技术

阐述了利用激光与物质相互作用的热效应实现微系统器件的局部加热键合原理，提出了激光键合塑料芯片和激光辅助加热阳极键合的思想，建立了半导体激光键合实验装置，并实现了聚甲基丙烯酸甲酯(PMMA)之间的键合。     

应用于微系统封装的激光局部加热键合技术

阐述了利用激光与物质相互作用的热效应实现微系统器件的局部加热键合原理 ,提出了激光键合塑料芯片和激光辅助加热阳极键合的思想 ,建立了半导体激光键合实验装置 ,并实现了聚甲基丙烯酸甲酯 (PMMA)之间的键合     

Localized bonding processes for assembly and packaging of polymeric MEMS

Localized bonding schemes for the assembly and packaging of polymer-based microelectromechanical systems (MEMS) devices have been successfully demonstrated. These include three bonding systems of plastics-to-silicon, plastics-to-glass, and plastics-to-plastics combinations based on two bonding processes of localized resistive heating: 1) built-in resistive heaters and 2) reusable resistive heaters. In the prototype demonstrations, aluminum thin films are deposited and patterned as resistive heaters and plastic materials are locally melted and solidified for bonding. A typical contact pressure of 0.4 MPa is applied to assure intimate contact of the two bonding substrates and the localized bonding process is completed within less than 0.25 s of heating. It is estimated that the local temperature at the bonding interface can reach above 150/spl deg/C while the substrate temperature away from the heaters can be controlled to be under 40/spl deg/C during the bonding process. The approach of localized heating for bonding of plastic materials while maintaining low temperature globally enables direct sealing of polymer-based MEMS without dispensing additional adhesives or damaging preexisting, temperature-sensitive substances. Furthermore, water encapsulation by plastics-to-plastics bonding is successfully performed to demonstrate the capability of low temperature processing. As such, this technique can be applied broadly in plastic assembly, packaging, and liquid encapsulation for microsystems, including microfluidic devices.     

用于MEMS器件芯片级封装的金-硅键合技术研究

MEMS器件大都含有可动的硅结构 ,在器件加工过程中 ,特别是在封装过程中极易受损 ,大大影响器件的成品率。如果能在MEMS器件可动结构完成以后 ,加上一层封盖保护 ,可以显著提高器件的成品率和可靠性。本文提出了一种用于MEMS芯片封盖保护的金 硅键合新结构 ,实验证明此方法简单实用 ,效果良好。该技术与器件制造工艺兼容 ,键合温度低 ,有足够的键合强度 ,不损坏器件结构 ,实现了MEMS器件的芯片级封装。我们已经将此技术成功地应用于射流陀螺的制造工艺中     

用于MEMS器件芯片级封装的金-硅键合技术研究

MEMS器件大都含有可动的硅结构，在器件加工过程中，特别是在封装过程中极易受损，大大影响器件的成品率。如果能在MEMS器件可动结构完成以后，加上一层封盖保护，可以显著提高器件的成品率和可靠性。本文提出了一种用于MEMS芯片封盖保护的金-硅键合新结构，实验证明此方法简单实用，效果良好。该技术与器件制造工艺兼容，键合温度低，有足够的键合强度，不损坏器件结构，实现了MEMS器件的芯片级封装。我们已经将此技术成功地应用于射流陀螺的制造工艺中。     

Thermal modeling of localized laser heating in multi-level interconnects

Thermal modeling was used to simulate thermal profiles from localized laser heating on two multi-level interconnect structures with metallization complexity comparable to those used in advanced interconnect systems. The modeling focused on addressing issues with regard to the effectiveness of laser-based techniques in defect localization in state-of-the-art metallization schemes. Modeling results indicate that indirect heating from the laser does not propagate effectively through adjacent metal layers from both the front side and the back side. Poor heat conduction and its associated thermal spreading during laser heating make defect detection difficult beyond three levels of metal. Thermal distribution and spreading were found to be more affected by interconnect geometries than by variations in laser spot size. Smaller temperature rises during laser heating were observed in the newer interconnect structures consisting of copper and low-k dielectric materials than in those with conventional aluminum, tungsten, and silicon dioxide. The smaller temperature rise leads to weaker signal strength at the defect sites and makes it more difficult to detect defects in the newer-material structures. Metallization density also affects heat conduction in advanced interconnect systems but the temperature rise during laser heating varies slowly as a function of metallization density.     

Thermal challenges in MEMS applications: phase change phenomena and thermal bonding processes

Two thermal challenges for current and next generation microelectromechanical systems (MEMS) applications are discussed. The first topic is the fundamental investigations of phase change phenomena in the microscale. It has been demonstrated that microresistive heaters can generate single, spherical and controllable thermal bubbles with diameters between 2 and 500 μm. Both simplified steady state and transient analyses that provide the scientific foundation of bubble nucleation in the microscale have been established but require further investigations. Several device demonstrations are briefed including microbubble-powered actuators, microbubble-powered nozzle-diffuser pumps and microbubble-powered micromixers for applications in microfluidic systems. The second topic addresses key heat transfer issues during the thermal bonding processes for MEMS fabrication and packaging applications. Basic thermal analyses on the microscale bonding processes have been developed while in-depth study is required to advance the understandings of the thermal bonding processes in the microscale. Successful new thermal bonding processes are introduced, including localized eutectic bonding, localized fusion bonding, localized chemical vapor deposition (CVD) bonding, localized solder bonding and nanosecond laser bonding for encapsulation of MEMS devices.     

Selective bonding and encapsulation for wafer-level vacuum packaging of MEMS and related micro systems

A laser-assisted bonding technique is demonstrated for low temperature region selective processing. A continuous wave carbon dioxide (CO₂) laser (λ=10.6 μm) is used for solder (Pb37/Sn63) bonding of metallized silicon substrates (chips or wafers) for MEMS applications. Laser-assisted selective heating of silicon led to the reflow of an electroplated, or screen-printed, intermediate solder layer which produced silicon–solder–silicon joints. The bonding process was performed on fixtures in a vacuum chamber at an air pressure of 10⁻³ Torr to achieve fluxless soldering and vacuum encapsulation. The bonding temperature at the sealing ring was controlled to be close to the reflow temperature of the solder. Pull test results showed that the joint was sufficiently strong. Helium leak testing showed that the leak rate of the package met the requirements of MIL-STD-883E under optimized bonding conditions and bonded packages survived thermal shock testing. The testing, based on a design of experiments method, indicated that both laser incident power and scribe velocity significantly influenced bonding results. This novel method is especially suitable for encapsulation and vacuum packaging of chips or wafers containing MEMS and other micro devices with low temperature budgets, where managing stress distribution is important. Further, released and encapsulated devices on the sealed wafers can be diced without damaging the MEMS devices at wafer level.     

A new ultrasonic precise bonding method with ultrasound propagation feedback for polymer MEMS

With the advantage of local heating, no foreign materials introduced and high efficiency, etc., ultrasonic bonding was attempted in micro assembly. A new ultrasonic precise bonding method based on ultrasound propagation was proposed. The principle was based on the different propagation efficiencies of ultrasound in the polymer components in different mechanical state. During ultrasonic bonding, local polymer components were heated up and changed from glassy state to viscoelastic state. The propagation of ultrasound though polymer components attenuated, the fusion degree was obtained by detecting the attenuation of ultrasound propagation in real time, which is meaningful for the precise control of ultrasonic bonding. Ultrasonic bonding system was established based on this mechanism. Piezoelectric sensor was fixed in the anvil to detect the ultrasound from horn through polymer components to the bottom. Amplitude attenuation ratio was set as the parameter to control ultrasonic bonding process. Bonding experiments of PMMA (polymethyl methacrylate) micro connectors and substrates were carried out and different fusion degrees were obtained at different parameters. This method is easy to take act at different bonding machine by adjust the amplitude attenuation ratio based on primary experiments and realizes the precise joining of the micro connector with low shape deformation and good appearance in bonding interface, which has significance in micro assembly.     

A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging

In this work we present a numerical, multi-scale approach to estimate the strength of a wafer-to-wafer metallic thermo-compression bonding. Following a top-down approach, the mechanical problem is handled at three different length scales. Taking into account control variables such as temperature, overall applied force over the wafer and contact surface roughness, it is shown that the proposed approach is able to provide an estimate of the sealing properties, especially in terms of bonding strength.     

取代石英晶体的MEMS振荡器和全硅振荡器

“时钟和振荡器是所有电子系统的心跳”,正如Silicon Labs公司副总裁Dave Bresemann所说的,振荡器可谓电子系统正常运行的根本。     

MEMS技术制作的螺线管微电感

考虑和分析了螺线管微电感的几何结构参数对微电感性能的影响,利用MEMS技术制作了四种不同几何结构的高性能射频螺线管微电感。这些微电感采用铜线圈,以减小线圈寄生电阻,且制作工艺简单,成本低,与IC相兼容。测试结果表明,微电感在较宽的工作频率范围内具有较高的Q值,在频率分别为6 GHz,4.4 GHz,5.8 GHz和5.6 GHz,微电感Q峰值为38,19.1,24.1和21.9,所对应的电感量为1.81 nH,1.07 nH,1.03 nH和1.17 nH。     

Germanium-on-insulator substrates by wafer bonding

Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are examined through transmission electron microscopy (TEM) from the initial hydrogen implant through the final Ge film polish. The completed GOI substrate is characterized for film uniformity, surface quality, contamination, stress, defectivity, and thermal robustness using a variety of techniques and found to be acceptable for initial device processing.     

微区熔化法激光切削

提出一种应用激光切削加工的新途径:将激光束会聚成光带,用以加热、熔化余量和零件分界面的微区,周时用工具剥离已分离的切屑,分析和初步试验证明了这种激光切削方法的可行性。其切削力小,刀具磨损小,激光能量使用经济。     

A Solenoid-Type Inductor Fabricated by MEMS Technique

A solenoid-type inductor for high frequency application is realized using a micro-electro-mechanical systems (MEMS) technique.In order to achieve a high inductance value and Q factor,UV-LIGA,dry etching technique,fine polishing and electroplating technique are adopted.The dimensions of the inductor are 1500μm×900μm×70μm,having 41 turns with a coil width of 20μm separated by 20μm spaces and a high aspect ratio of 3.5∶1.The maximum measured inductance of the inductor is 6.17nH with a Q factor of about 6.