DS/FH扩频测控信号的一种同步方案分析

针对航天测控信号的高动态特点,提出了直扩/跳频混合扩频(DS/FH)测控信号的一种快速同步方案.阐述了采用频率快速扫描和基于FFT算法的三维快捕方法.通过对码多普勒及多普勒频移跳变现象的分析,得到了利用跳频图案和多普勒频移的跟踪结果来实时补偿最大为8.2 kHz的多普勒跳变量的方法.在比较了几种载波跟踪方法的基础上,给出了采用算法嵌入式环路跟踪测控信号的建议.     

直扩／跳频混合扩频信号测量性能分析

从模糊函数角度,研究了直扩/跳频(DS/FH)混合扩频信号的测距、测速性能.推导了DS/FH混合扩频信号的模糊函数表达式.由数值仿真得到一个跳频点内传递一个直扩伪码周期的混合扩频信号模糊图.仿真分析结果表明,DS/FH混合扩频信号具有良好的测距测速性能,从而论证了该信号用于跟踪测量的可行性.最后,根据信号估计理论分析了直扩/跳频混合扩频信号精度.     

基于编码跳频图案的DS/FH测控信号性能分析

为了研究跳频图案的不同编码方式对DS/FH测控信号的性能影响,从模糊函数的角度出发,推导了DS/FH测控信号的模糊函数表达式,得到了不同切面的距离模糊图和速度模糊图。仿真结果表明,采用步进编码形式跳频图案的DS/FH测控信号,出现距离和速度耦合;采用随机编码形式跳频图案,则没有距离和速度耦合,且具有良好的目标分辨性能和测量精度性能。     

多音干扰下DS/FH混合扩频测控信号检测性能分析

分析DS/FH(直扩/跳频)混合扩频测控信号在干扰环境下的性能对该新测控体制的研究具有重要的意义.推导了多音干扰环境下DS/FH测控信号的检测概率和虚警概率表达式,仿真分析了不同直扩增益、跳频增益组合情况在不同多音干扰条件下的检测性能,得到了一些有意义的结论.为进一步研究提供了参考.     

DS/FH信号的测速测距性能分析

针对新的使用DS/FH混合扩频信号的测控体制,为了分析DS/FH混合扩频信号受干扰时的测量性能,建立了DS/FH混合扩频信号的发送与接收模型.通过分析3种不同干扰信号的特点,分别为宽带阻塞式干扰,部分频带干扰和高斯白噪声,得出在干扰条件下的接收信号信噪比变化.最后通过理论仿真得出在干扰条件下DS/FH混合扩频信号的测速测距性能.     

Detection Performance of DS/FH Hybrid Signals for TT&C under Repeater Jamming

分析直扩/跳频(DS/FH)混合扩频测控信号在干扰环境下的性能对该新测控体制的研究具有重要的意义。推导了转发干扰环境下DS/FH测控信号的检测概率和虚警概率表达式。以Matlab/Simulink为平台搭建了检测性能仿真系统,对检测概率、主副旁瓣比和相关系数进行了仿真分析,指出只要转发时延小于一个跳频驻留,就能实现"欺骗"干扰,验证了理论推导的正确性,为进一步研究提供了参考。     

基于SAWTDL-DL的DS/FH跳频同步方案设计

在DS/FH混合扩频系统中,跳频同步是通信完成的重要保障,也是实现的难点。本文针对DS/FH信号设计了一种基于SAWTDL-DL的并串结合的跳频同步方案,较好地解决了这个问题。     

基于维纳滤波的跳频信号跟踪优化

相对于传统的固定载波频率信号的测控体制,使用跳频扩频信号进行测速在提高了测控系统抗干扰能力的同时也带来了信号跟踪精度不高的问题。针对这一问题,该文提出一种使用维纳滤波器优化传统环路的方法,推导了滤波器的加权系数。仿真结果表明,经过优化之后的环路跟踪精度得到改善,且改善效果与滤波器的阶数n有关。当n=10时,系统的测速精度达到30cm／s比未使用维纳滤波时的测速精度提高了约3倍。     

基于时域分割的DS/FH信号参数估计

针对时频分析方法在直扩/跳频(DS/FH)混合扩频信号参数估计中存在时频分辨率受限、交叉项干扰、实时性差等缺点,通过分析DS/FH信号的时频特性,提出了一种新的DS/FH信号参数估计方法。该方法从待测信号的时域分析出发,利用不同跳频点对应的周期数不相等的性质,完成了对DS/FH信号的时域分割,最后结合DS/FH信号性质完成了对待测信号跳频周期、驻留时间、跳频频率的估计。仿真结果表明,该方法针对DS/FH信号的参数估计精度高,运算速度较快,且没有干扰频率。     

DS/FH快跳频系统设计和窄带干扰抑制

跳频通信具有一定的抗窄带干扰的能力,跳速越高抗窄带干扰的能力越强.在DS/FH跳频系统中,解跳之后干扰信号存在于部分的扩频信号,相当于扩频信号内存在时变的干扰信号.文中将Turbo纠错码和分集合并技术联合应用于DS/FH快跳频系统中,利用信号的分集特性,采用奇异值分解的算法检测受干扰的跳频信号,将未受干扰的跳频信号合并,结果表明采用Turbo码的快速跳频方式时可以实现窄带干扰抑制.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.