Nb5+的掺杂引起La0.67Sr0.33MnO3增强的磁电阻效应

将Nb2O5掺杂到用溶胶-凝胶法制备的La0.67Sr0.33MnO3(LSMO)微粉中,XRD测量结果表明所有样品均为单相菱面结构.随着Nb5 掺杂量的增加,材料电阻率发生显著变化.在x=0.06的掺杂样品中得到最高为1110Ω·cm电阻率(x是掺入的Nb离子与母体材料的摩尔比),比LSMO高5个数量级,这是由于晶界处以及颗粒内部增加的自旋相关的散射和隧穿效应所致.Nb5 离子的掺杂使样品的低场磁电阻(LFMR)和高场磁电阻(HFMR)效应都有所增强.77K下,0.1和1T磁场下在x=0.07样品中分别得到25%和42%的磁电阻效应,分别是LSMO样品的2倍和1.7倍.室温下x=0.03样品的磁电阻最大,为7%.其中,LFMR来源于颗粒晶界处电子的自旋相关隧穿及散射作用,而HFMR来源于表面层的自旋非共线结构.     

La0.67Sr0.33MnO3中Ag-Ti的掺杂效应

将La0.67Sr0.33MnO3（LSMO）、Ag2O及TiO2粉混合经高温烧结后制备了钙钛矿相/xAg两相复合体系（x是Ag与钙钛矿材料的物质的量比）,系统地研究了Ag-Ti的共掺杂对LSMO电性和磁电阻效应的影响.0.07摩尔比Ti4＋离子的B位掺杂使LSMO的居里温度降至室温.Ag的掺入对Tc影响不大,Tp逐渐升高.由于钙钛矿颗粒属性的改善和金属导电通道的出现,材料的电阻率明显下降.Ag掺杂使室温磁电阻得到显著增强,室温下从x=0.30样品中得到最大的磁电阻,约为32%,是La0.67Sr0.33MnO3样品的8倍,La0.67Sr0.33Mn0.93Ti0.07O3样品的1.6倍.     

磁场退火对La_(0.7)Sr_(0.3)MnO_3低场磁电阻增强效应的研究

为了提高La0.7Sr0.3MnO3的低场磁电阻效应,将样品进行了磁场退火处理。实验结果表明,磁场退火并没有改变样品的磁矩,但对其磁各向异性产生了较大的影响。与零磁场下退火的样品相比,磁场退火样品的磁电阻明显提高。这种增强效应在低磁场下更加明显,在0.1 T的外磁场下,磁退火样品的磁电阻比零场退火的提高了140%。利用自旋极化隧穿机制解释了这种增强的磁电阻效应。     

Ho_(0.5)Pr_(0.5)FeO_3的磁性与巨磁介电效应

采用固相反应法制备了Ho0.5Pr0.5FeO3多晶样品,对其磁性和磁介电特性进行了系统研究。在T=4.5 K附近存在Ho离子的反铁磁相变,在T=59~80K可观测到Fe离子的自旋重取向转变,磁滞回线表明样品呈现弱铁磁性。在T=270 K,介电常数可达~103,研究表明该介电常数与270 K附近的电阻变化相关联,该处电阻变小,介质损耗减小,导致介电值变大。尤其重要的是,该样品在室温下表现出磁场诱导的巨磁介电效应,在频率f=1 kHz、外加磁场为1.6×106 A/m下,其值可达5500%,该巨磁介电效应可能来源于磁电阻效应。     

La0.67Sr0.33MnO3中Bi的掺杂效应

将Bi2O3掺杂到用溶胶—凝胶法制备的La0.6Sr0．33MnO3(LSMO)微粉中,XRD测量结果证实有过量的Bi析出。随着Bi掺杂量的增加,LSMO／(Bi2O3)x/2材料电阻率发生明显变化,在x=(0—0．10)摩尔比的掺杂范围内,电阻率先上升后突然下降。当X=0．1时,电阻率比未掺杂样品下降了一个数量级。Bi掺杂对低温和室温磁电阻有着完全不同的影响。低温下,随掺杂量增加,磁电阻下降;室温下Bi的微量掺杂可以使磁电阻增大,掺入x=0.03Bi使室温磁电阻由-4.4％提高到-5．6％。     

自旋在有机半导体中的输运

当前的微电子器件主要是通过控制半导体中载流子的电荷来存储、处理和传输信息,电子的自旋自由度长期在这些应用中被忽略。自旋电子学主要是研究与载流子的自旋相关的各种现象和效应,为在微电子器件中集成这些自旋效应,产生各种更新更强的功能的自旋器件奠定基础。有机半导体材料由于自旋轨道作用和超精细作用很弱,自旋扩散长度被认为很长,因而是一种具有很强应用潜力的自旋电子材料。最近,我们研究组首次成功的在低温下,以有机材料Alq_3作为中间层,La_(2/3)Sr_(1/3)MnO_3(LSMO)和Co分别作为两个电极的三明治结构中,低温下获得了高达40%的巨磁电阻效应。磁电阻随有机材料厚度的增加指数衰减,根据修正后的Jullierre模型,自旋扩散长度估计为约45nm。另外,巨磁电阻效应随温度的升高而降低,在温度较高时,样品除了有巨磁电阻效应之外,还明显表现出一种物理机理完全不同的高场磁电阻效应,电阻随磁场的增加而持续降低。为了进一步研究这种高场磁电阻效应的物理机理,我们制备了仅有一个铁磁性电极的有机发光二极管LSMO/有机/Al器件,实验结果表明高场磁阻效应与有机材料和制备方法无关,同时,发光器件的电致发光效应随磁场的增大而...     

渠道火花烧蚀法制备La0.7Sr0.3MnO3薄膜

采用新型渠道火花烧蚀技术在LaAlO3(001)基片上生长了La0.7S0.3MnO3(LSMO)薄膜.X射线衍射对样品结构的分析表明,制备的LSMO薄膜具有c轴取向生长的特点,薄膜与基片间因晶格不匹配而受面内应力挤压,发生弛豫而出现两相.在室温下采用振动样品磁强计测试样品的面内方向磁滞回线,表明制备的LSMO样品具有软磁性,矫顽力Hc=13 Oe.通过标准四探针法测量了LSMO薄膜的室温薄膜电阻与外加磁场的关系,得知零场电阻率ρ(0)=19.4 mΩ·cm,室温下4800 Oe外场作用下的磁电阻变化率为2.25%,对此用双交换作用机制定性地加以了解释.     

La0.67-xNdxSr0.33MnO3体系的磁性和电性

通过M-T曲线,ESR曲线,红外光谱,拉曼光谱,P-T曲线和MR-T曲线的测量,研究了La0.67-xNdxSr0.33MnO3(x=0.10,0.20,0.30,0.40,0.50)样品的磁电性质.实验结果表明:随着Nd掺杂的增加,样品的磁结构从长程铁磁有序向自旋团簇玻璃态、反铁磁态转变;当x=0.30、0.40时发生相分离,且x=0.40样品的ZFC曲线随温度升高在160K左右突然跌落,出现少见的"肩膀";样品的电行为随着Nd掺杂的增加发生变化.样品的磁电行为和CMR效应来源于Nd掺杂引起的次晶格不同耦合和与自旋相关的界面隧穿效应.     

LaMnO3的A位二元掺杂对磁电阻效应的调制和提高

基于探讨钙钛矿型锰氧化物磁电阻效应的目的,样品采用固相反应法制备,主要就LaMnO3的A位二元掺杂对磁电阻效应的影响作比较研究,发现(La1-xRx)0.67T0.33MnO3(T为Ca,Sr;R为Sm,Gd,Tb,Y)随x的增加,Tp和Tc逐渐降低,ρm和磁电阻值迅速增加,均可用晶格效应来解释;La0.67Sr0.33-xCuxMnO3(0≤x≤O.33)的Tp随x的增加而下降,室温磁电阻值明显增大还提高了其温度稳定性,是因A位平均离子半径和A位离子的失配度起主要作用;La0.67(Ba1-xCax)0.33MnO3(x=0,0.40,0.45,0.55,0.60,1.00)的ρ-T变化呈现双峰特性,在O.4 T的磁场下,在77 K～230 K的温区内,磁电阻随T的升高而单调下降,可用晶界效应来解释,在Tc附近出现峰值磁电阻,这种高温磁电阻变化行为可用DE模型及非磁无序来说明;La0.5Ca0.5-xBaxMnO3(0≤x≤0.50)系列样品,当x≥0.14时随x的增加Tp升高,Tp处的峰值电阻逐渐减小,在5 T的磁场下,x≤0.20时磁电阻随T的降低先增大后减小再增大,峰值在Tp附近,x≥0.20时磁电阻随T降低而线性增加,其原因是相邻Mn离子间存在铁磁性和反铁磁性两种效应相互竞争.     

Sr2Fe1-xAlxMoO6(x=0,0.3)陶瓷的低场磁电阻效应研究

用传统的固相反应法合成了Fe位Al掺杂的双钙钛矿型氧化物Sr2Fe1-xAlxMoO6(x=0,0.3),并研究了它们的低场磁电阻效应.无磁性Al3+离子的Fe位掺杂打破了晶粒内部Fe离子和Mo离子的交替有序排列,将晶粒内部的亚磁性区域分割成很多尺寸更小的区域,提高了磁场灵敏度,从而使得Al掺杂样品在低温时的磁电阻比未掺杂时的Sr2FeMoO6提高一倍以上;但是Al掺杂后样品的磁电阻随着温度的升高而迅速下降,表现出更强烈的温度依赖性.     

Fundamentals of MRAM Technology

Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different memories are being used while compromising performance and adding cost to the system. Magnetoresistive Random Access Memory (MRAM) has the potential to replace these memories in various systems with a single, universal memory solution. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. In addition, MRAM can operate at high-speed and is expected to have competitive densities. In this paper we describe several fundamental technical and scientific aspects of MRAM with emphasis on recent accomplishments that enabled our successful demonstration of a 256 kbit memory chip.     

Variations in BOLD response latency estimated from event‐related fMRI at 3T: Comparisons between gradient‐echo and Spin‐echo

Functional magnetic resonance imaging (fMRI) commonly uses gradient‐recalled echo (GRE) signals to detect regional hemodynamic variations originating from neural activities. While the spatial localization of activation shows promising applications, indexing temporal response remains a poor mechanism for detecting the timing of neural activity. Particularly, the hemodynamic response may fail to resolve sub‐second temporal differences between brain regions because of its signal origin or noise in data, or both. This study aimed at evaluating the performance of latency estimation using different fMRI techniques, with two event‐related experiments at 3T. Experiment I evaluated latency variations within the visual cortex and their relationship with contrast‐to‐noise ratios (CNRs) for GRE, spin echo (SE), and diffusion‐weighted SE (DWSE). Experiment II used delayed visual stimuli between two hemifields (delay time = 0, 250, and 500 ms, respectively) to assess the temporal resolving power of three protocols: GRE_TR1000, GRE_TR500, and SE_TR1000. The results of experiment I showed the earliest latency with DWSE, followed by SE, and then GRE. Latency variations decreased as CNR increased. However, similar variations were found between GRE and SE, when the latter had lower CNR. In experiment II, measured stimulus delays from all conditions were significantly correlated with preset stimulus delays. Inter‐subject variation in the measured delay was found to be greatest with GRE_TR1000, followed by GRE_TR500, and the least with SE_TR1000. Conclusively, blood oxygenation level‐dependent responses obtained from GRE exhibit greater CNR but no compromised latency variations in the visual cortex. SE is potentially capable of improving the performance of latency estimation, especially for group analysis. © 2013 Wiley Periodicals, Inc. Int J Imaging Syst Technol, 23, 215–221, 2013     

Spin Injection and Spin Accumulation in Permalloy–Copper Mesoscopic Spin Valves

We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as nonmagnetic metal. Our multiterminal geometry allows us to experimentally distinguish different magnetoresistance signals, being (1) the spin valve effect, (2) the anomalous magnetoresistance (AMR) effect, and (3) Hall effects. We find that the AMR contribution of the Py contacts can be much larger than the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a conventional measurement geometry. However, these contact magnetoresistance signals can be used to monitor the magnetization reversal process, of the spin injecting and detecting Py contacts. In a nonlocal spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T = 4.2 K as well as at room temperature. We obtain spin diffusion lengths in Cu of 1 m and 350 nm at T = 4.2 K and room temperature respectively.     

Spin current,spin accumulation and spin Hall effect

Abstract

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.     

Spin Injection: A Survey and Review

The study of the transport and relaxation of spin-polarized carriers in the solid state began about 30 years ago. Tunneling spectroscopy was applied to ferromagnet–insulator–superconductor junctions to demonstrate the polarization of interfacial currents. The use of a ferromagnetic material as an injector and/or detector of polarized carriers has since become a valuable tool, and spin injection has been applied to nonmagnetic metals, superconductors, and semiconductors. The spin injection phenomenology is reviewed in the context of two topics of continuing importance for basic and applied research: (i) the transmission of polarized carriers across ferromagnet/nonmagnetic material interfaces and (ii) carrier spin relaxation inside the nonmagnetic material.     

Spin Dynamics and Spin Transport

Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac electric fields allows efficient spin manipulating by the electric component of electromagnetic field through the electric dipole spin resonance (EDSR) mechanism. Usually, it is much more efficient than the magnetic manipulation due to a larger coupling constant and the easier access to spins at a nanometer scale. The dependence of the EDSR intensity on the magnetic field direction allows measuring the relative strengths of the competing SO coupling mechanisms in quantum wells. Spin coupling to an in-plane electric field is much stronger than to a perpendicular field. Because electron bands in microstructures are spin split by SO interaction, electron spin is not conserved and spin transport in them is controlled by a number of competing parameters, hence, it is rather nontrivial. The relation between spin transport, spin currents, and spin populations is critically discussed. Importance of transients and sharp gradients for generating spin magnetization by electric fields and for ballistic spin transport is clarified.