混合型Fe3O4@SiO2胶体光子晶体光传输特性的仿真分析

除了通过改变胶体粒子半径及晶格常数来实现对光子带隙的调控方式之外,能否利用不同尺寸粒子的混合精确控制胶体光子晶体的显色行为是人们关注的一个重要科学问题。在分析Fe₃O₄@SiO₂胶体光子晶体的带隙范围与介电常数、电磁波入射角度、晶格常数、颗粒尺寸、SiO₂包覆层厚度的依赖关系的基础上,利用数值仿真手段对不同尺寸粒子混合得到的光子晶体的光传输特性进行了研究。结果发现,两种粒径的磁性胶体粒子按不同质量比混合后,其光子带隙位置始终落在两种粒径胶体粒子各自形成光子晶体的带隙位置之间,且随着大粒径颗粒掺杂比的增加,反射光谱逐渐红移。这一结果证明混色原理对胶体光子晶体仍然是适用的。该结果对研究胶体光子晶体结构色的新型调控方式具有重要的参考价值。     

PBG structures of novel two-dimensional annular photonic crystals with triangular lattice

The photonic band gap (PBG) structures of four types of annular photonic crystals (PCs) with inner-scatter of rectangular, square, hexagonal and circle shapes are respectively calculated by the plane wave expansion method. The optimal samples with the largest gap-midgap ratio for each structure are obtained by scanning the four parameters: filling ratio f, dielectric constant ɛ₁, rotating angle θ of inner-scatters and outside radius R of the air ring. The results show that the band gap can be further maximized by adjusting the structural parameters, and a wide PBG with the gap-midgap ratio of 20.4% is gained in the annular photonic crystal with rectangular inner-scatters.     

Numerical simulation of absolute photonic band gaps for two-dimensional photonic crystals with the rotational square lattice

The band gap of two-dimensional (2D) photonic crystals with the square lattice of rotational square air columns made of GaAs and Ge is analyzed by the plane wave expansion method. The effects of dielectric refractive index and crystal structures on the absolute photonic band gap are investigated. The results show that the maximum absolute photonic band gap emerges when the square air columns are rotated for 30° and the filling ratio f of the medium is 0.3276. It is also noticed that absolute photonic band gaps appear when the refractive index of the medium (n) is 2.61. When n=3.70, the width of the absolute photonic bandgaps reaches the maximum.     

压缩六角格子[A(BC)]m结构光子晶体禁带特性

通过引入缺陷和色散介质方法,调控光子的运动状态,研究一种压缩[A(BC)]m结构负折射率光子晶体的TE波和TM波的传输特性和色散特性,研究发现两种模的禁带特性随入射角和色散介质折射率的变化而变化,并且其带隙比普通光子晶体的大,而透射带要窄,这为高品质低损耗的谐振腔、微波天线、透射光栅、光波导等新器件的研制提供理论依据.     

含各向异性特异材料的一维光子晶体的传输特性

利用传输矩阵方法研究了含各向异性特异材料的一维光子晶体的电磁传输性质.结果表明,光子晶体具有全向的零平均折射率带隙.这种全向带隙几乎不受晶格尺度、波的极化方向和入射角的影响.当一缺陷引入到光子晶体中时,会有电磁缺陷模出现.零平均折射率带隙中的缺陷模与普通Bragg带隙中的缺陷模不同,几乎不受晶格尺度、波的极化方向和入射角的影响.这一性质将在全向反射镜或滤波器中具有潜在的应用价值.     

Analysis of membrane support structures for integrated antennausage on two-dimensional photonic-bandgap structures

The study of the transmission of electromagnetic waves through a photonic crystal with various membranes placed over the surface is presented in this paper. A difference in performance is observed even for a membrane thickness that is unable to support guided substrate modes through total internal reflection. The transmittance has been investigated for two crystal orientations, assuming normally incident external plane waves on a finite thickness two-dimensional (2-D) photonic crystals both with and without a membrane. The angular transmission response is characterized by scanning the incidence angle of the impinging plane wave to cover all available angles within the 2D periodic plane of the structure     

三层单负材料为周期单元对称型一维光子晶体的频率特性

应用传输矩阵法研究了以三层单负材料为周期单元对称型一维光子晶体(ABC)M(CBA)M。结果表明,其带隙结构对入射角的敏感程度与光波的偏振性有关,TE波的高频通带会随着入射角的增大向中心频率移动,而TM波的带隙结构对入射角的变化不敏感。研究还发现各介质层厚度的变化对能带结构的影响规律不相同。当保持各介质层厚度比不变,成倍增大各介质层厚度,高、低频通带变窄并向中心频率移动,低频区通带首先消失。当改变各介质层厚度比时,若保持A、C层厚度不变,减小B层厚度,高、低频通带分别向两侧移动同时收缩变窄;若保持B层厚度不变,增大A、C层厚度,高、低频区通带同样变窄,低频区通带首先消失,带隙同样变宽。最后研究了该光子晶体的零有效相位带隙结构,发现其通带随晶格常数的增大逐渐向中心频率移动同时收缩变窄,这一特性可以用来设计单通道窄带零有效相位延迟滤波器。     

Inverse‐Woodpile Photonic Band Gap Crystals with a Cubic Diamond‐like Structure Made from Single‐Crystalline Silicon

Three dimensional photonic band gap crystals with a cubic diamond‐like symmetry are fabricated. These so‐called inverse‐woodpile nanostructures consist of two perpendicular sets of pores in single‐crystal silicon wafers and are made by means of complementary metal oxide–semiconductor (CMOS)‐compatible methods. Both sets of pores have high aspect ratios and are made by deep reactive‐ion etching. The mask for the first set of pores is defined in chromium by means of deep UV scan‐and‐step technology. The mask for the second set of pores is patterned using an ion beam and carefully placed at an angle of 90° with an alignment precision of better than 30 nm. Crystals are made with pore radii between 135–186 nm with lattice parameters a = 686 and c = 488 nm such that a/c = √2; hence the structure is cubic. The crystals are characterized using scanning electron microscopy and X‐ray diffraction. By milling away slices of crystal, the pores are analyzed in detail in both directions regarding depth, radius, tapering, shape, and alignment. Using optical reflectivity it is demonstrated that the crystals have broad reflectivity peaks in the near‐infrared frequency range, which includes the telecommunication range. The strong reflectivity confirms the high quality of the photonic crystals. Furthermore the width of the reflectivity peaks agrees well with gaps in calculated photonic band structures.     

Theoretical optimization of complete forbidden bands in woodpile-type photonic crystals

Based on the plane-wave method, the optical properties of complete forbidden bands of woodpile structure photonic crystal with an entire Lattice rotation of 45° in the x-y plane were theoretically studied in terms of height-to-pitch ratios, filling factors, and rotation angles. The calculated results show that the gap to mid-gap ratio changes slightly with a filling fraction ranging from 0.25 to 0.30. The optimum height-to-pitch ratio is about 1.3. The gap to mid-gap ratio reaches more than 0.18 when the rotation angle increases from 40° to 50° and the maximum gap to mid-gap ratio of 0.2 remains unchanged for the rotation angle from 42°to 48° with a constant height-to-pitch ratio of 1.3. The gap to mid-gap ratio reaches the maximum value of 0.2 when the height-to-pitch ratio is 1.3. This woodpile-type photonic crystal can provide large band gaps within a wider parameter range, which makes it convenient to manufacture three-dimensional photonic crystals in the laboratory.     

〔A（BC）〕^m结构光子晶体光纤传输特性

通过引入缺陷和色散介质方法,调控光子的运动状态,研究一种〔A（BC）〕m结构负折射率光子晶体的TE波和TM波的传输特性和色散特性,得到两种模的色散特性随入射角变化而变化规律,并且其带隙比普通光子晶体的大,而透射带要窄。通过运用传统计算电磁场与电磁波传播的FDTD方法及PML边界条件来仿真〔A（BC）〕m结构光子晶体光纤...     

含负折射率材料的1维光子晶体掺杂缺陷模研究

为了研究含有负折射率材料的光子晶体掺杂缺陷模的光学传输特性,利用传输矩阵理论进行数值分析。采用插入和替代两种方式对排列整齐的光子晶体进行掺杂,产生了缺陷模式。结果表明,引入正折射率缺陷只能在布喇格带隙中产生缺陷模,引入负折射缺陷能够同时在全方位光子带隙和布喇格带隙中产生缺陷模。同时研究了掺杂方式、入射方向、缺陷厚度、缺陷位置、缺陷类型对缺陷模式的影响,并对含有两层缺陷的光子晶体进行研究,得到两缺陷层的距离与带隙产生的关系,即距离越近越容易产生缺陷模式,且缺陷模的深度越深。这对于制造新型的全方位滤波器是有指导作用的。     

入射光频率变化对负折射现象的影响

以硅的圆形介质柱在空气中组成二维六边形排列结构的光子晶体为例,研究了入射光频率变化对光子晶体负折射现象的影响.利用时域有限差分法(FDTD)并通过模拟仿真给出了两者之间的规律,同一光子晶体中,在可产生较明显负折射现象的入射光频率范围内,折射光的偏转角度随入射光频率的增大而减小;随着入射光归一化频率逐渐变小,增加光子晶体的波导宽度可产生较明显负折射现象.要得到折射率为-1的情况,则入射光归一化频率越小,光子晶体的波导宽度要相应越大.     

Transmission of a microcavity structure in a two-dimensional photonic crystal based on macroporous silicon

Photonic crystals consist of regularly arranged dielectric scatterers of dimensions on a wavelength scale, exhibiting band gaps for photons, analogous to the case of electrons in semiconductors. Using electrochemical pore formation in n-type silicon, we fabricated photonic crystals consisting of air cylinders in silicon. The starting positions of the pores were photolithographically pre-defined to form a hexagonal lattice of a=1.58 μm. The photonic crystal was microstructured to make the photonic lattice accessible for optical characterization. Samples with different filling factors were fabricated to verify the gap map of electric and magnetic modes using Fourier-transform infrared (IR) spectroscopy. The complete band gap could be tuned from 3.3 to 4.3 μm wavelength. We were able to embed defects such as waveguide structures or microcavities by omitting certain pores. We carried out transmission measurements using a tunable mid-IR optical parametric oscillator. The resonance is compared with theoretical expectations.     

波分复用各向异性光子晶体滤波器

从光子晶体的光子频率禁带特性出发，提出了用两个或两个以上的各向异性周期结构光子晶体叠加在一起，形成叠层结构光子晶体，以获得窄带滤波特性的设想；利用光学传输矩阵法研究了这种结构的光子晶体，分析了在不同入射角和折射率条件下，该周期结构的透射和偏振的光学特性。分析表明，各向异性光子晶体在折射率比值较大或与高折射率各向同性介质结合使用，可以获得较窄的通带，从而实现滤波。数值模拟的结果也证实了上述构思的正确性。     

Effect of rhenium doping on various physical properties of single crystals of MoSe2

Effect of rhenium doping is examined in single crystals of MoSe₂ viz. MoRe_0.005Se_1.995, MoRe_0.001Se_1.999 and Mo_0.995Re_0.005Se₂, which is grown by using the direct vapor transport (DVT) technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials.     

入射角度对一维光子晶体禁带的调制研究

利用特征矩阵法,分别研究了不同偏振方式的波入射到光子晶体时,光子晶体的禁带随入射角度的变化.结果表明:不论是TM波入射还是TE波入射,随着入射角度的增大,光子晶体的带隙都向短波方向移动;TM波入射时,光子晶体的带隙随入射角度的增大而减小,而以TE波入射光子晶体时,随着入射角度的增大,光子晶体的带隙逐渐增大.     

ZnO光子晶体的制备及其光子带隙特性研究

利用重力场下的自组装,将单分散的ZnO胶体颗粒悬浮液自组装为三维光子晶体.通过扫描电镜图谱、透射光谱对制得的ZnO光子晶体进行了表征.结果表明,这种方法可得到排列有序的光子晶体,并且改变反应条件可以控制ZnO胶体球的尺寸.制得的样品有较宽的光子禁带,且禁带波长位置随胶体球粒径的减小和前处理温度的降低而蓝移.当入射光角度逐渐增大时,禁带中心位置有规律地向短波长方向移动.     

Anomalous scattering of electrons in <Emphasis Type="Italic">n</Emphasis>-Si crystals irradiated with protons

The aim of this study was to gain insight into the effect of irradiation with 25-MeV protons on the Hall mobility of electrons in n-Si crystals. Irradiated crystals with an initial electron concentration 6 × 10¹³ cm^-3 were studied using the Hall method in the range of temperatures 77–300 K. The studies showed that, in crystals irradiated with the proton dose Φ = 8.1 × 10¹² cm^-2, the effective mobility of conduction electrons μ_eff increases drastically. This effect is direct evidence that inclusions with relatively high conductivity and with nonrectifying junction at interfaces with semiconductor matrix are predominantly formed in n-Si crystals under these conditions. Agglomerations of interstitial atoms or their associations can represent such inclusions.     

Hysteresis of the photonic band gap in VO<Subscript>2</Subscript> photonic crystal in the semiconductor-metal phase transition

VO₂ photonic crystals exhibiting a semiconductor-metal phase transition at 55–75°C have been synthesized by the infiltration of vanadium dioxide (VO₂) into opal crystals and the subsequent removal of SiO₂ by etching. A study of the optical reflection spectra of such crystals demonstrated that they are characterized by a wide photonic band gap (in the [111] direction of light propagation) in the visible spectral range. The energy position of this band gap changes abruptly upon a phase transition. The temperature shift and hysteresis of the position of the photonic band gap were measured. Quantitative calculations of the reflection spectra of photonic crystals of opal and VO₂ were performed in terms of the model of a layered periodic medium, and numerical values of the geometric parameters and optical constants of the studied three-dimensional periodic structures were obtained.     

一种基于光子晶体的中远红外双波段兼容伪装材料

光子晶体作为一种新型人工结构功能材料,基于其光子禁带的高反射特性可以实现热红外伪装。选择红外波段透明的薄膜材料A、B,设计出在中远红外波段具有高反射禁带的光子晶体,利用薄膜光学理论的特征矩阵法计算了反射光谱。通过构造异质结构光子晶体,实现了光子带隙的展宽,该结构光子晶体基本上实现了中远红外双波段的高反射,在2.94~5.06μm和7.66~11.98μm波段的光谱反射率接近为1;在2.91~5.12μm和7.62~12.29μm波段的光谱反射率大于95%,较好地满足了中远红外双波段兼容伪装的要求。倾斜入射时光子晶体的TM波和TE波的反射光谱是不同的,随着入射角度的增加,TM波的带隙逐渐变窄,而TE波的带隙逐渐变宽。