Zr掺杂对BaTiO3陶瓷微观形貌及性能的影响

采用溶胶-凝胶法制备了锆掺杂的钛酸钡陶瓷,通过XRD、SEM等分析检测手段对所得锆钛酸钡陶瓷样品进行了表征。系统地研究了Zr掺杂对BaTiO_3基陶瓷相组成、微观形貌和介电性能的影响。结果表明,锆钛酸钡陶瓷样品均为单一的立方相钙钛矿结构,晶粒大小均匀,随着Zr掺杂量的增加,陶瓷晶粒尺寸先增大后减小,孔隙逐渐增多,介电常数先增大后减小,介电损耗先减小后增大。     

镧、铈掺杂对钛酸钡基介电陶瓷性能的影响

为了改善钛酸钡陶瓷的介电性能,采用溶胶凝胶法,制备了镧、铈掺杂的钛酸钡基介电陶瓷,研究了镧、铈2种稀土氧化物对其介电性能、耐压程度等性能的影响以及与显微结构的关系.实验表明:2种稀土元素对钛酸钡陶瓷的晶粒生长有较大的抑制作用,镧和铈的掺杂量在1.0%(物质的量分数)左右对钛酸钡陶瓷的介电性能有很好的改善作用.但镧离子和铈离子在钛酸钡中的离子取代情况有所不同,因而,改善性能的作用不同.镧掺杂钛酸钡陶瓷性能好于铈掺杂的钛酸钡陶瓷,掺杂物质的量分数为1.0%的镧掺杂钛酸钡陶瓷的相对介电常数大于4000,从室温到125℃温度范围内,介电常数的温度系数小于10%,击穿场强大于7.5kV/mm.     

化学包覆法制备Ho^(3+)掺杂钛酸钡基X8R细晶陶瓷EI北大核心CSCD

采用化学包覆法将Ho_2O_3包覆在纳米级钛酸钡粉体表面,通过烧结将Ho^(3+)扩散到钛酸钡晶粒中,调节其介电性能,研究了不同Ho^(3+)掺杂量对Ba Ti O3基陶瓷相组成、微观结构和介电性能的影响。X射线衍射和扫描电子显微镜分析结果表明:Ho^(3+)改性陶瓷样品均为赝立方相,Ho^(3+)的加入能抑制晶粒生长,改善陶瓷微观结构,有利于制备均匀的细晶陶瓷。透射电子显微镜观察显示,包覆层的厚度约为2 nm,包覆Ho_2O_3有助于陶瓷烧结过程中形成"核-壳"结构晶粒,能显著改善钛酸钡基陶瓷的介电温度稳定性,提高绝缘电阻。当Ho^(3+)掺杂量为2.0%时,陶瓷的相对介电常数为1 612,ΔC/C(-55~150℃)<±15%,满足EIA X8R电容器的温度特性。     

化学包覆法制备Ho~(3+)掺杂钛酸钡基X8R细晶陶瓷

采用化学包覆法将Ho_2O_3包覆在纳米级钛酸钡粉体表面,通过烧结将Ho~(3+)扩散到钛酸钡晶粒中,调节其介电性能,研究了不同Ho~(3+)掺杂量对Ba Ti O3基陶瓷相组成、微观结构和介电性能的影响。X射线衍射和扫描电子显微镜分析结果表明:Ho~(3+)改性陶瓷样品均为赝立方相,Ho~(3+)的加入能抑制晶粒生长,改善陶瓷微观结构,有利于制备均匀的细晶陶瓷。透射电子显微镜观察显示,包覆层的厚度约为2 nm,包覆Ho_2O_3有助于陶瓷烧结过程中形成"核-壳"结构晶粒,能显著改善钛酸钡基陶瓷的介电温度稳定性,提高绝缘电阻。当Ho~(3+)掺杂量为2.0%时,陶瓷的相对介电常数为1 612,ΔC/C(-55~150℃)±15%,满足EIA X8R电容器的温度特性。     

锆元素不同掺杂方式对钛酸钡陶瓷介电性能的影响

研究了锆元素不同掺杂方式对钛酸钡陶瓷介电性能的影响.采用固相法制备出掺杂比例为1mol%的zrO<,2>-BaO和ZrO<,2>两种掺杂方式的钛酸钡陶瓷样品,对其进行多方面的表征.实验结果表明.ZrO<,2>-BaO掺杂与ZrO<,2>掺杂的钛酸钡晶格常数、介电性能会发生不同的变化,这是由锆元素不同掺杂情况对钛酸钡的作...     

Nd掺杂钛酸钡基陶瓷的制备及性能研究

采用溶胶-凝胶一步法制备了Nd掺杂锆钛酸钡基陶瓷,通过XRD、SEM等分析检测手段对样品进行表征。研究了Nd掺杂量的不同对其微观形貌及介电性能的影响。研究表明:随着Nd掺杂量的增大,钛酸钡基陶瓷的晶粒尺寸增大,介电常数呈现出先增大后减小的变化趋势,介电损耗逐渐减小;当Nd掺杂量为摩尔分数0.07%时,陶瓷较为致密,其室温介电常数达到最大值16032,介电损耗较小为0.0046。     

钒掺杂钛酸钡基陶瓷的制备和表征

采用溶胶-凝胶一步法制备了钒掺杂钛酸钡基陶瓷,通过XRD、SEM等分析检测手段对粉体和陶瓷样品进行了表征。研究了V掺杂量的不同对钛酸钡基陶瓷相组成、微观结构及介电性能的影响规律。研究表明:样品为四方相钙钛矿结构,随着V掺杂量的增加,陶瓷晶粒尺寸增大,介电常数与介电损耗总体在降低,并使其居里温度向高温方向移动。当陶瓷中V的掺杂量为0.1%(mol)时,介电常数与密度达到最大值,室温介电常数(ε_r)和介电损耗(tanδ)分别为2886和3.56%。     

Y掺杂Ca_(1-x)Y_(2x/3)Cu_3Ti_4O_(12)陶瓷的制备及其介电性能研究

采用固相反应法制备了Y掺杂的CaCu_3Ti_4O_(12)(CCTO)陶瓷,研究了Y掺杂量对Ca_(1-x)Y_(2x/3)Cu_3Ti_4O_(12)(x=O%,1%,3%,5%)陶瓷的物相结构、微观形貌和介电性能影响,对Y掺杂影响CCTO陶瓷介电性能的机理进行了分析。结果表明:Y掺杂量在1~5 mol%时对CCTO陶瓷的相结构基本无影响;然而,当Y掺杂量达到3 mol%时,CCTO陶瓷的晶粒长大被明显抑制。Y掺杂量为1~3 mol%时,不仅可以提高CCTO陶瓷的介电常数,而且可以同步降低其介电损耗,从而有助于CCTO陶瓷的综合介电性能的提升。     

Al掺杂对钛酸钡基陶瓷微观形貌及性能的影响

采用溶胶-凝胶一步法制备了Al掺杂钛酸钡基陶瓷。利用XRD、SEM等分析检测手段对陶瓷样品进行表征。探讨了Al掺杂量对钛酸钡基陶瓷相组成、微观形貌、介电常数、介电损耗及介电弛豫的影响。研究表明:Ba Ti O3基陶瓷粉体样品均为单一的钙钛矿结构;随着Al掺杂量的增大,陶瓷的晶粒尺寸逐渐减小,室温介电常数呈现出减小的变化趋势,而居里温度略有增加;当Al掺杂量为0.03mol%时,陶瓷的晶粒大小均匀,其室温介电常数达到最大值3427,介电损耗小于4%。     

掺杂Bi_2O_3对CaCu_3Ti_4O_(12)陶瓷显微结构和介电性能的影响

采用传统高温共固相反应法制备了Ca(1-x)BixCu3Ti4O(12-x/2)(x=0,1%,2%,3%,4%,5%)陶瓷,研究了掺杂Bi2O3对CaCu3Ti4O12陶瓷的显微结构和介电性能的影响,结果表明:掺杂Bi2O3可以促进CCTO陶瓷的致密性和晶粒均匀性,掺杂Bi2O3有利于提高CCTO陶瓷的介电性能以及其稳定性,且介电性能与陶瓷晶粒的均匀性和陶瓷的致密性有着一定的联系。相对而言掺杂4%Bi2O3的介电性能最优。     

掺镁钛酸钡的抗还原研究

对掺镁钛酸钡进行了．抗还原研究。研究了Ba／Ti摩尔比、镁掺杂摩尔分数和烧结气氛对陶瓷的致密化、电阻率以及介电性能的影响。结果表明：在氮气气氛中烧结的样品比在空气中烧结的样品具有更大的介电常数、较小的介电损耗。当烧结温度和保温时间都相同时,与在空气中烧结的样品相比,在氮气气氛条件下烧结的样品具有较大的密度,较大的电阻率．较大的介电常数和较小的介电损耗。当镁掺杂摩尔分数为1％时、随着Ba／Ti摩尔比的增加,介电损耗的变化不大;而当镁掺杂摩尔分数为2％时,随着Ba／Ti摩尔比的增加,介电损耗增加。     

Vanadium doping effects on microstructure and dielectric properties of barium titanate ceramics

V-doped barium titante ceramics were prepared by conventional solid state reaction method. XRD patterns show that V⁵⁺ ions have entered into the tetragonal perovskite structure of solid solution to substitute for Ti⁴⁺ ions on the B sites. Addition of vanadium accelerates grain growth of BTO ceramics and there is abnormal grain growth of barium titanate ceramics with higher vanadium concentration. Vanadium doping can increase the Curie temperature and decrease the dielectric loss of barium titanate ceramics. As vanadium concentration increases, the remnant polarization of V-doped BTO ceramics begins to increase and reaches the maximum and then decreases. The coercive electric field for V-doped barium titanate ceramics decreases with the increasing of vanadium concentration. As temperature rises, the remnant polarization and the coercive electric field of V-doped barium titanate ceramics decrease simultaneously.     

Improvement in the Microstructures and Dielectric Properties of Barium Strontium Titanate Glass–Ceramics by AlF3/MnO2 Addition

The microstructures and dielectric properties of barium strontium titanate glass–ceramics are closely related to the AlF₃ and MnO₂ additions. The grain morphology was changed by adding AlF₃, while the dielectric loss was decreased significantly by adding MnO₂. At the same time the breakdown strength (BDS) was improved by doping 4 mol% AlF₃ and 1 mol% MnO₂ with the glass–ceramics. The present investigation resulted in the development of glass–ceramic compositions with high dielectric BDS and low dielectric loss for high energy density capacitor applications.     

Mn和Zr共掺杂钛酸锶钡/氧化镁复合陶瓷材料的微结构和介电性能

通过固相反应法制备Mn、Zr共掺杂钛酸锶钡/氧化镁陶瓷粉体,经干压成型后在空气气氛中于1450℃烧结4h,通过扫描电子显微镜和X射线衍射研究了ZrO2和MnO2共掺杂的Ba0.6Sr0.4TiO3/MgO复合陶瓷材料的微结构和介电性能。结果表明:ZrO2可以显著降低材料的介电常数和介电损耗,有效提高了陶瓷材料的温度稳定性;随ZrO2添加量的增加,体系的晶胞参数略有增加,MgO在钛酸锶钡中以独立相的形式存在;制备出的BST铁电陶瓷材料的25℃相对介电常数较低(εr<110),介质损耗小于1.0×10–3(在频率为10kHz时),温度系数小于6.012×10–3,可调性大于20%(8.0kV/mm),适用于制作移相器。     

Effect of Silver Addition on the Dielectric Properties of Barium Titanate-Based X7R Ceramics

Different amounts of silver (0.5–10 wt%) have been mixed with EIA X7R-type ceramic powders based on barium titanate. The XRD analysis indicated that no phases other than BaTiO₃ and silver were present in the doped ceramics; it further suggested that no reaction took place between BaTiO₃ and silver during calcination and sintering. SEM observation showed that the silver particles presented island distribution in the BaTiO₃ ceramic matrix. The densification and dielectric properties of the silver-doped ceramics in disk form were investigated. A large amount of silver addition (>1 wt%) was found to improve the sintered density and dielectric properties. The temperature coefficient of capacitors of the ceramics doped with 10 wt% silver still met the X7R characteristics, and the dielectric constant of the ceramics at room temperature was >6000, which is the highest dielectric constant in the BaTiO₃-based X7R system.     

二氧化硅掺杂钛酸锶钡陶瓷的介电性能与电卡效应

采用传统的固相反应法制备二氧化硅（SiO₂）掺杂钛酸锶钡（Ba_0.65Sr_0.35TiO₃,BST）陶瓷（BST+x%SiO₂）,研究了掺杂二氧化硅对BST陶瓷的物相、微观形貌、介电性能及电卡效应的影响。结果表明：掺杂二氧化硅并未改变BST陶瓷的晶型结构,但有助于提升晶粒的均匀性和材料介电性能频率的稳定性。随着二氧化硅掺杂量增加,BST陶瓷的介电常数呈现单调递减趋势,介电弥散特性逐渐增强。二氧化硅的掺杂有利于提升BST陶瓷的电卡性能,其中BST+3%SiO₂陶瓷具有最优的电卡效应,在30 ℃下可获得最大电卡绝热温变（ΔT_max）,ΔT_max和ΔT_max/ΔE分别为1.6 ℃、8.00×10 ^-7 ℃·m/V,电卡效应半峰宽（T_span）为10 ℃左右。     

Antimony doping effect on barium titanate structure and electrical properties

Nanopowders of pure and antimony doped barium titanate (BaTiO₃-BT) were synthesized by polymeric precursors method based on Pechini process. Obtained powders were pressed and sintered at 1300 °C for 8 h. XRD analysis showed the formation of cubic crystal structure in all nanopowders and tetragonal in BT ceramics. The influence of antimony concentration on structure change, grain size reduction and microstructure development was analyzed. Dielectric behavior of pure and antimony doped ceramics was studied as a function of temperature and frequency. The significant dielectric properties modification as a consequence of doping with different antimony concentration was noticed. The electrical resistivity measurements pointed out that antimony concentration influenced also on materials change from insulator to semiconductor.     

Magneto-electric properties of xNi0.7Zn0.3Fe2O4 – (1-x)BaTiO3 multiferroic composites

Di-phase ceramic composites, with general formula xNi_0.7Zn_0.3Fe₂O₄ – (1-x)BaTiO₃(x = 0.9, 0.7, 0.5, 0.3, 0.1), were prepared by a mixing method. X-ray analysis, for powder and ceramics, indicated the formation of ferrite and barium titanate phases without the presence of the impurities. SEM analysis indicated that the composite morphology contained two types of grains, polygonal and rounded. Homogeneous microstructure and the smallest grain size were obtained in ceramics with 70% of barium titanate. The electrical properties of these materials were investigated using impedance spectroscopy, dielectric and ferroelectric measurements. The NZF-BT(30-70) composite has shown better electrical properties in comparison to other investigated ceramics, confirmed by dielectric and ferroelectric data analysis. Saturation magnetization and coercive field decreased with the increase of the content of ferroelectric phase.     

Influence of Rare-Earth Dopants on Barium Titanate Ceramics Microstructure and Corresponding Electrical Properties

In this article, ytterbium and erbium oxides are used as doping materials for barium titanate (BaTiO₃) materials. The amphoteric behavior of these rare-earth ions leads to the increase of dielectric permittivity and decrease of dielectric losses. BaTiO₃ ceramics doped with 0.01–0.5 wt% of Yb₂O₃ and Er₂O₃ were prepared by conventional solid-state procedure and sintered at 1320°C for 4 h. In BaTiO₃ doped with a low content of rare-earth ions (0.01 wt%) the grain size ranged between 10 and 25 μm. With the higher dopant concentration of 0.5 wt%, the abnormal grain growth is inhibited and the grain size ranged between 2 and 10 μm. The measurements of capacitance and dielectric losses as a function of frequency and temperature have been carried out in order to correlate the microstructure and dielectric properties of doped BaTiO₃ ceramics. The temperature dependence of the dielectric constant as a function of dopant amount has been investigated.