片式阻容元件的和发展方向

在国外的片式元器件（ＳＭＤ）外，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

国外军用片式阻容元件的进展

本文叙述了国外军用片式阻容元件的发展概况,从生产和技术上总结了片式阻容元件的特点,指出了其发展趋势。     

阻容元件的进展

近几年来，国外阻容元件稳定发展；新产品产量上升，老产品产量下降，我国却以三年翻一翻的高速度发展。但仍远远落后于发达国家，本文还综述了近几来国外容元件在片式化，小型化，高性能化和新材料方面的进展。     

片式阻容元件生产设备的应用及发展

片式电子元件已成为当今元件的主流产品，尤其片式阻容元件的使用数量最多，而片式阻容元件生产设备的自动化程度及精度直接决定了片式阻容元件的产量和质量，近几年，国内一些厂家在 外同类设备的基础上，根据实际生产工艺的需求开发出自己的片式阻容元件国产化生产设备，并已使用在实际生产中，本主要介绍我公司部分专用设备的功能，特点，适用范围，技术指标以及发展前景。     

电子元件、组件

TN60·95020654片式阻容元件的现状和发展方向/戴富贵(宏明电子实业总公司)11电子元件与材料一1 994,(5)一6一11 在国外的片式元器件中,片式阻容元件发展最快,主要表现为片式化率迅速上升,文章综述了国外阻容元件在这方面的进展,指出我国的差距,提出了我国如何发展的措施.图2表2参5(许)代瑛,李同泉,陶文成(昆明贵金属所)11电子元件与材料一1994,(6),一16~21 通过在钉系电阻浆料配方中加人多种金属及金属氧化物粉末的大量实验,推出了制备高性能钉系低阻值厚膜电阻浆料的方法。图8参3(许)TM54 95020655高性能钉系低阻值厚膜电阻浆料的研究/…     

片式元件的国内外发展情况

本调研报告是在对全国140个单位的片式元件的生产、研制、生产线引进和应用情况进行全面调查的基础上,再收集大量国外资料,经多次讨论、反复修改而写成。本文共分七部分,首先对片式元件的基础知识,共同的基本问题,如片式元件的定义、特点、分类、引线和封装、焊接等问题进行了论述;其次较详细地介绍了各种片式元件(包括片式无源元件、片式有源器件和片式机电元件)的技术状况,对一些主要片式元件的结构、工艺、技术参数也作了适当说明。文中还用具体数字说明了片式元件的国内外发展动态。国外情况主要包括宏观发展规模、数据和应用领域,国内情况包括试制、引进和生产现状。本文还着重介绍了片式元件在国内的应用情况,尤其是片式阻容元件在国内的具体应用实例,并根据这些数据,对片式元件和表面贴装技术在我国的发展作了预测。最后对我国片式元件发展中存在的问题进行了归纳,并提出了发展我国片式元件的战略建议。     

国外军用阻容元件可靠性工作的进展

军用电子设备中阻容元件的可靠性对整机可靠性的影响很大。国外(主要是美国)在可靠性评估和可靠性管理方面取得了新的进展。本文介绍了国外军用阻容元件目前达到的可靠性水平。对我国如何提高军用阻容元件的可靠性提出了建议。     

信息产品的质量现状与分析

（续上期） （五）电子基础产品１．电子元器件 １）片式元件的质量现状与分析 片式元件（ＳＭＣ）是适用于表面组装技术（ＳＭＴ）的无引线或短引线新型元件,生产和应用最多的是片式电阻、片式电容（片式陶瓷电容、片式钽电容、片式铝电解电容、片式薄膜电容、片式云母电容）、片式电感。 我国的表面安装技术起步较晚,元件的片式化进程比国外慢。自８０年代中期开始,我国先后引进了片式元件生产线约３０条,ＳＭＣ产业逐步形成．最近几年,日本几家最大的片式元件制造商到我国合资生产片式电阻、片式电容,具有较大的规模,大大增加了国…     

片式阻容元件高速编带机的开发与研制

介绍了ＢＤ－１２００系列片式阻容元件高速编带机的系统功能、工作流程、电气设计、软件设计及关键技术和调机经验。该设备已交付有和户使用近一年，已形成批量生产，综合性能达到了国际９０年代先进水平。     

元件集成化小型化成趋势

阻容元件小型化、片式趋势加剧尽管金融危机暂时让活跃的电子产业趋于平静,但电子产品朝微型化、多功能发展的趋势并未改变。元器件的小型化不仅有助于实现机器的紧凑化,而且增加了电路设计上的自由度,并带来全新功能和附加价值。     

SiC BJT的单电源基极驱动电路研究

摘要：对SiC BJT基极驱动电路损耗的构成进行了分析、对比,提出单基极电阻和阻容网络两种单电源基极驱动方案,对开关速度进行了对比。针对单电源阻容网络驱动方案,对其关键电路参数进行了分析,并针对一款SiC BJT器件给出了优化的参数组合设计结果,并给出实验测试结果,从而为进一步优化设计提供了基础。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

一种新的应用于降压式DC-DC变换器电流采样电路的设计

在分析了传统的应用于大负载电流降压式DC-DC变换器电流采样电路主要缺点的基础上,提出一种新的应用于降压式DC-DC变换器的电流采样电路。该方法通过一个电阻电容网络来消除电感寄生电阻的影响,并利用开关电容积分器来实现降压式DC-DC变换器的电流采样,在Chartered 0.35μm CMOS工艺下实现该电路并流片验证。最终的测试结果显示,提出的电流采样电路实现了对降压式DC-DC变换器精确的电流采样。     

开关电源新技术动态

本文介绍了开关电源的发展情况以及国外的最新成就，考察了各种新型开关电源，它们的主要优点及其存在的问题；综述了开关电源计算机辅助设计技术的研究和发展；最后简要介绍了国外目前正在研究的一些课题。     

高密度3-D封装技术的应用与发展趋势

高密度3-D封装技术是国内外近几年飞速发展的微电子封装技术。它在2-D平面基础上向立体化发展,实现了一种新的更高层次的混合集成,因而具有更高的组装密度、更强的功能、更优的性能、更小的体积、更低的功耗、更快的速度、更小的延迟等优势。该技术正在加速未来电子整机系统的微小型化。主要介绍了近年来3-D封装应用状况和一种新型的封装技术——系统上封装SOP(System-on-Package)。     

Capacitive Modulation of Micropipet Impedance

Quantitative theoretical and experimental evidence is presented suggesting that the saline-filled, glass micropipets employed in microvascular pressure measurements behave electrically as simple, parallel resistor-capacitor combinations in which the capacitance is dependent upon the length of the pipet in contact with the conductive fluid surrounding the tip. Changes in the apparent pipet impedance arising from modest alterations in the immersion length are sufficient to cause zero-level shifts in the measured pressure.     

Voltage Contrast for Gate-Leak Failures Detected by Electron Beam Inspection

We examine a technique for enhancing the voltage contrast (VC) of a failure analysis (FA) tool, defect review scanning electron microscope (DR-SEM). For an SRAM, we demonstrate a dependence of gate-leak VC on the relative angle (RA) between the direction of beam scanning by the FA tool and the lengthwise direction of the gate electrode. Experimental results show that better VC results are obtained when RA is zero, in other words, a beam's scan-line is parallel with the SRAM gate. We propose a simple qualitative resistor-capacitor model to explain this phenomenon. With the help of this VC enhancement technique of the FA tool, we could tune the electron beam inspection (EBI) recipe to an appropriate condition quicker. The cycle time of EBI recipe tuning was shortened from five to two days. As a result, correct EBI evaluation results of countermeasure experiments led us to a yield enhancement solution within a shorter period of time.     

Neighboring Coefficients Preservation for Signal Denoising

For traditional thresholding denoising, the wavelet coefficients are thresholded without considering the information of other coefficients. In this paper, we propose a novel denoising approach which incorporates the neighboring coefficients into signal denoising. Our approach not only preserves the coefficients above the threshold, but it also preserves the coefficients predominated by useful components although their magnitudes are smaller than or equal to the threshold. Experimental results illustrate that the proposed approach is better than the NeighShrink scheme and the hard thresholding in both of the visual perception and the numerical results.     

A novel transient simulation for 3D multilevel interconnections oncomplex topography

An efficient method is presented to model the transient characteristics of distributed resistor-capacitor of ULSI multilevel interconnections on complex topography, in which the reformulation of the boundary-element method (BEM) and the Pade-via-Lanczos (PVL) algorithm associated with multilayer Green's function can avoid the redundant works on both volume mesh and transient analysis associated with the finite-difference method. An adaptive multilayer Green's function is adopted to investigate several cases that have revealed interesting physical mechanisms in charge transfer between conductors on multilayer topography. To improve the timing analysis efficiency of the finite-difference method, the dominant poles are obtained by introducing the PVL algorithm for model-order reduction. Hence, it is easy to calculate the transient characteristics of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, multilayers, and their combinations     

用于光纤陀螺的LiNbO3集成光学器件

本文报道用于光纤陀螺(FOG)的LiNbO_3集成光学(IO)器件及其技术。介绍制作LiNbO_3波导的扩散和质子交换两种技术,叙述了国内外近年研制和生产的FOG用多功能集成光学芯片及LiNbO_3相位调制器,给出了它们的结构、性能和封装(光纤耦合)技术。对国内外发展状况的综述表明,在这个技术领域,国内研制的器件的性能,已接近国外80年代末的水平。