基于太赫兹量子阱光电探测器的成像技术研究进展

太赫兹(THz)波对非极性材料有较好的穿透性,对生物医学组织无电离效应,因而非常适合无损检测、生物医学成像等应用。THz量子阱光电探测器(THz QWPs)具有响应速度快、响应率高、噪声等效功率低、体积小的特点。相较于其他探测器,THz QWPs作为成像系统接收器时,系统具有成像分辨率高、成像速度快、成像信噪比高、结构紧凑等优势。本文综述了基于THz QWPs的成像研究进展,并对成像系统核心指标的影响因素进行了分析和总结。采用更稳定的装置固定THz QWPs,提升器件响应速度、探测灵敏度、阵列规模,可以有效提升系统各项核心性能。     

Electrically driven quantum dot/wire/well hybrid light-emitting diodes

Electrically driven quantum dot, wire, and well hybrid light-emitting diodes are demonstrated by using nanometer-sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light-emitting diodes containing low-dimensional quantum structures are good candidates for broad-band highly efficient visible lighting sources.     

Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector

We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 × 10¹¹ cm^− 2 were observed by atomic force microscope (AFM). From the high ratio of photoluminescence (PL) peak intensities from dot layer to that from wetting layer, we have concluded that high dot density caused the short diffusion length for carriers to be easily captured by QDs. Moreover, the Si-doped samples exhibited the multi-state transitions within the quantum dots, which were different to the single level transition of undoped sample. Besides, the dominant PL peaks of Si-doped samples were red-shifted by about 25 meV compared to that of the undoped sample. It should result from the dopant-induced lowest transition state and therefore, the energy difference should be equal to the binding energy of Si in InAs QDs.     

Advances in solution-processed quantum dots based hybrid structures for infrared photodetector

Infrared photodetector based on solution-processed colloidal quantum dots (QDs), which possess the special properties of wide-size-tunable bandgap, high quantum confinement potential and low-cost fabrication, have been employed successfully as a viable technological proposal for optical communication, biological imaging, night vision, surveillance, and remote sensing. However, QDs-based photodetector always fails to demonstrate excellent infrared photodetection performance because of low value of carrier mobility. Fortunately, QDs solutions can be easily deposited on various substrates, including 2D materials, film materials or other QDs, and these QDs-based hybrid structures can be engineered to achieve high mobility and light absorbance simultaneously through synergistic effect between QDs and other materials. Herein, we focus on how QDs-based hybrid structure developments have effectively facilitated the performance of infrared photodetectors enhancements, including three main types of QDs-based hybrid structure, optimization of infrared photodetector performance and integrated circuit engineering. Finally, we systematically summarize the current challenges and future development of infrared photodetector based on QDs and its hybrid structure.     

Three-well one- and two-color quantum well infrared photodetectors

Quantum well infrared photodetectors (QWIP) have been developed rapidly and large QWIP arrays with 256×256 and 640×480 elements have been demonstrated. But they all use quantum well structures that consist of 30–50 periods which have a relatively small conversion efficiency due to the small optical gain. In this paper, a high performance quantum well infrared photodetector consisting of only three quantum wells is presented which shows very large conversion efficiencies up to 29% at a bias voltage −0.8 V and peak wavelength 8.5 μm. A high strain two-stack, two-color QWIP consists of three wells in each stack is also presented here for MWIR and LWIR detection. The MWIR stack has employed 35% of indium in the InGaAs well which not only achieved peak wavelength at 4.3 μm, but also obtained very high peak responsivity of 0.37 A W⁻¹.     

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire

In the growth of InGaN multiple quantum well structure, V-pits has been observed to be initiated at the threading dislocations which propagate to the quantum well layers with high indium composition and substantially thick InGaN well. A set of samples with varying indium well thickness (3-7.6 nm) and composition (10-30%) are grown and characterized by photoluminescence (PL), X-ray diffraction, transmission electron microscopy and atomic force microscopy. The indium content and the layer thicknesses in InGaN/GaN quantum well are determined by high-resolution X-ray diffraction (XRD) and TEM imaging. With indium composition exceeding 10%, strain at the InGaN/GaN interface leads to the generation of V-pits at the interlayers of the MQW. Higher indium composition and increase in thickness of a period (InGaN well plus the GaN barrier) appear to enhance pits generation. With thicker InGaN well and reduction in thickness of GaN to InGaN (or the R ratio), pit density is substantially reduced, but it results in greater inhomogeneity in the distribution of indium in the InGaN well. This leads to a broadened PL emission and affect the PL emission intensity.     

Multilayer Graphene–GeSn Quantum Well Heterostructure SWIR Light Source

The problem of light source always prevents silicon‐based photonics from achieving a final integration. Although some optical pump lasers have been reported in recent years, an electrical pumping laser is considered as the ultimate solution. To fabricate a Si‐based laser, there are some crucial obstacles that need to be solved such as difficulties in material epitaxy, light absorption by metal electrodes, and compatibility with the existing complementary metal–oxide–semiconductor transistor process. Here, a multilayer graphene and GeSn/Ge quantum well (QW) heterostructure is designed and fabricated as a Si‐based light source. Specially designed Ge_0.9Sn_0.1/Ge QWs are used as active layer, which achieves a photoluminescence (PL) peak at 2050 nm. Graphene, which has a high transmittance for all bands of light, lessens the burden of growing thick cladding layer and perfectly breaks the deadlock of light disappearance in metal contacts. The electroluminescence (EL) spectrum of the device is achieved at a peak of 2100 nm under an injection current density of 100 A cm^?2. Both the PL and EL measurements show the heterostructure has good performance as a short‐wave infrared (SWIR) light source. Therefore, the results provides a good alternative for the light source in silicon‐based photonics.     

Biocompatible Semiconductor Quantum Dots as Cancer Imaging Agents

Approximately 1.7 million new cases of cancer will be diagnosed this year in the United States leading to 600 000 deaths. Patient survival rates are highly correlated with the stage of cancer diagnosis, with localized and regional remission rates that are much higher than for metastatic cancer. The current standard of care for many solid tumors includes imaging and biopsy with histological assessment. In many cases, after tomographical imaging modalities have identified abnormal morphology consistent with cancer, surgery is performed to remove the primary tumor and evaluate the surrounding lymph nodes. Accurate identification of tumor margins and staging are critical for selecting optimal treatments to minimize recurrence. Visible, fluorescent, and radiolabeled small molecules have been used as contrast agents to improve detection during real‐time intraoperative imaging. Unfortunately, current dyes lack the tissue specificity, stability, and signal penetration needed for optimal performance. Quantum dots (QDs) represent an exciting class of fluorescent probes for optical imaging with tunable optical properties, high stability, and the ability to target tumors or lymph nodes based on surface functionalization. Here, state‐of‐the‐art biocompatible QDs are compared with current Food and Drug Administration approved fluorophores used in cancer imaging and a perspective on the pathway to clinical translation is provided.     

High-Sensitivity Fluorescence Lifetime Thermal Sensing Based on CdTe Quantum Dots

The potential use of CdTe quantum dots as luminescence nano-probes for lifetime fluorescence nano-thermometry is demonstrated. The maximum thermal sensitivity achievable is strongly dependent on the quantum dot size. For the smallest sizes (close to 1 nm) the lifetime thermal sensitivity overcomes those of conventional nano-probes used in fluorescence lifetime thermometry.     

Organic High Electron Mobility Transistors Realized by 2D Electron Gas

A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field‐effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high‐mobility crystalline organic materials. Therefore, there emerges a chance for applying energy‐band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy‐band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm² V^?1 s^?1, and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy‐band engineering, offering a promising way for the step forward of organic electronics.     

Single Pixel Black Phosphorus Photodetector for Near‐Infrared Imaging

Infrared imaging systems have wide range of military or civil applications and 2D nanomaterials have recently emerged as potential sensing materials that may outperform conventional ones such as HgCdTe, InGaAs, and InSb. As an example, 2D black phosphorus (BP) thin film has a thickness‐dependent direct bandgap with low shot noise and noncryogenic operation for visible to mid‐infrared photodetection. In this paper, the use of a single‐pixel photodetector made with few‐layer BP thin film for near‐infrared imaging applications is demonstrated. The imaging is achieved by combining the photodetector with a digital micromirror device to encode and subsequently reconstruct the image based on compressive sensing algorithm. Stationary images of a near‐infrared laser spot (λ = 830 nm) with up to 64 × 64 pixels are captured using this single‐pixel BP camera with 2000 times of measurements, which is only half of the total number of pixels. The imaging platform demonstrated in this work circumvents the grand challenges of scalable BP material growth for photodetector array fabrication and shows the efficacy of utilizing the outstanding performance of BP photodetector for future high‐speed infrared camera applications.