On the development of a high-efficiency 750-GHz frequency triplerfor THz heterodyne systems

The development of a 750-GHz Schottky varactor diode frequency tripler having a measured output power and efficiency of more than 120 μW and 0.8% at a frequency of 803 GHz is described. The output powers and efficiencies are the highest reported for this frequency. The 750-GHz tripler mount is analyzed and optimized using a scaled model of the mount. Measurements of the embedding impedance seen by the device, using the model, are compared with theoretical values     

Design rule development for microwave flip-chip applications

This paper presents a novel experimental approach for the analysis of factors to be considered when designing a flip-chip package. It includes the design of an experiment and statistical analysis of the outputs and uses both test-structure measurements and full-wave simulation techniques in the 1-35-GHz frequency range. The most significant factors are found to be, from the most to least important, the length of the area where the device and substrate overlap (referred to as conductor overlap), the bump diameter, and the width of the coplanar-waveguide transmission-line launch. These results are valid for conductor overlaps between 300-500 μm. For a lower value (120 μm), the significance level of the overlap decreases and the bump height also becomes significant. Test-structure measurements in the 120-200-μm overlap range validate this result and demonstrate the decrease in the significance level. The substrate thickness in the 10-25-mil interval is found to be statistically insignificant, therefore, it can be eliminated from further analysis. This approach provides a foundation for development of a set of design rules for RF and microwave flip-chip similar to RF integrated-circuit design rules     

A 210-GHz fT SiGe HBT with a non-self-aligned structure

A record 210-GHz f_T SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm² is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f_T. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device     

A very short planar silica spot-size converter using a nonperiodicsegmented waveguide

To reduce the coupling loss of a fiber-to-ridge waveguide connection, a planar silica spot-size converter for a wavelength of 1.55 μm is implemented in the form of a nonperiodic segmented waveguide structure with irregular tapering. A simple single-step lithography process is sufficient for the fabrication of the planar structures. An evolutionary algorithm has been successfully applied for the optimization. The simulated results obtained with a three-dimensional (3-D) finite difference beam propagation method (FD-BPM) program are compared with measurements of implemented couplers, showing very good agreement. A waveguide-to-fiber coupling efficiency improvement exceeding 2 dB per converter is shown. Structures obtained with this approach are very short (~140 μm) and simple to integrate on the same wafer with other planar structures such as phased arrays or ring resonator structures     

Sandwich-type ferromagnetic RF integrated inductor

The first demonstration of a sandwich-type ferromagnetic RF integrated spiral inductor for the 2-GHz range is reported. Two ferromagnetic CoNbZr films were set to sandwich the spiral in order to enhance the amount of magnetic flux linkage across the coil current. The stresses given from the insulator to the ferromagnetic film were studied. The inductance L of 7.9 nH and the qualify factor Q of 12.7 were obtained for a 200 μm×400 μm size four-turn rectangular spiral at f=2 GHz. The inductance was better than that of an air core of the same coil size by 19%, and the Q was better by 23%. Comparison with the on-top magnetic film type was also discussed     

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process     

A new test structure for the evaluation of graft-base lateraldiffusion depth in high-performance bipolar transistors

A new test structure allows the first electrical measurement of lateral diffusion depth of the graft base in high-performance bipolar transistors. It is indispensable for realizing high cutoff frequency to control the graft-base depth. The test structure has two independent base electrodes and no emitter region. It can evaluate the effective intrinsic-base length by measuring resistance between two electrodes. Graft-base depth can be derived from the active-base length and the effective intrinsic-base width. The feasibility of this structure Is confirmed by evaluating 50-GHz and 30-GHz transistors, with graft-base depths of 0.05 μm and 0.13 μm, respectively. The new method is compared with conventional ones     

Comparison of the effects of absorption coefficient and pulseduration of 2.12-μm and 2.79-μm radiation on laser ablation oftissue

Erbium and holmium lasers are attractive for minimally invasive surgical applications as they operate at wavelengths where tissues exhibit strong absorption due to their water content and because these wavelengths are transmittable through optical fibers. In this study, the basic physical mechanisms underlying tissue ablation and the laser-induced tissue effects using pulsed Er:YSGG (2.79 μm) and Ho:YAG (2.12 μm) laser radiation are presented and compared, Q-switched (τ=40 ns, E⩽50 mJ) and free-running (τ=250 and 400 μs) Er:YSGG (E=100 mJ) and Ho:YAG (E⩽1 J) laser energy was delivered in water via a 400-μm fiber. The dimension and lifetime of the expanding and collapsing bubbles and the laser-induced pressure in water after each laser pulse were measured with fast-flash videography and time-resolved pressure measurements. Depending on the absorption coefficient, pulse energy, and pulse duration, three different regimes were distinguished: evaporation, tensile-stress-induced cavitation, and explosive vaporization. In vitro tissue effects, ablation depth, and extent of tissue damage on meniscus treated under water and on cornea treated in air were investigated and examined histologically. Er:YSGG radiation, due to its 100 times higher absorption than Ho:YAG radiation, exhibited a high tissue ablation efficiency with a relatively small zone of coagulated tissue (Q-switched 4-10 μm, free-running less than 100 μm), whereas the coagulated tissue zone was 300-1000 μm after free-running and 100-120 μm after Q-switched Ho:YAG laser impact     

A series of InGaP/InGaAs HBT oscillators up to D-band

In this paper, the development of a series of fixed-frequency heterojunction bipolar transistor (HBT) oscillators from the W- to D-bands is reported. The oscillators are designed based on feedback theory with a small-signal equivalent circuit. This design method enables the achievement of high-output-power oscillators for the management of the power that is generated at the current source inside the HBT. We use a 1 μm×10 μm single-emitter InGaP/InGaAs HBT as an active device for each oscillator, and 50-Ω coplanar waveguides as transmission lines and resonators. Emitter output topology is adopted to reduce the chip size. The series of oscillators achieve the oscillation frequency of 74.8-146.7 GHz. To our knowledge, the 146.7-GHz fundamental oscillation frequency is the highest oscillation frequency achieved thus far using InGaP/InGaAs HBT technology. The output power of the 146.7-GHz oscillator is -18.4 dBm. The chip size of the oscillator is 731 μm×411 μm     

Perturbation Measurement of Transverse R/Q in Iris-Loaded Waveguides

The measurement of transverse R/Q in iris-loaded waveguides by perturbation techniques is described. The underlying pertrurbation theory for resonant cavities is reviewed, and formulas for metallic needles, a sapphire rod, and a teflon bead are given, A calibration of the perturbing objects in TM/sub 010/ and TM/sub 110/ cavities shows good agreement with theory. Conventional oscillator and transmission methods are compared, and a systematic error of the oscillator method is explained. A more sensitive null method is described. A definition of the transverse R/Q is given, from which it follows that the knowledge of the longitudinal electric field component is sufficient to determine the deflecting properties of a structure. The accuracy of perturbation measurements was tested on a cavity for which the R/Q was known from computer calculations and deflection tests. It was found that the various values agree to within 20 percent. Perturbation measurements of deflectors with small coupling holes showed the theoretically predicted interaction parameters. Values close to 2.2 k/spl Omega/ /m at 2.856 GHz were measured on a 2/3 /spl pi/ wave structure with about a 2-cm beam hole.     

Low-loss low-confinement GaAs-AlGaAs DQW laser diode with opticaltrap layer for high-power operation

A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm^-1, while keeping the series resistance at values comparable cm with symmetrical quantum-well gradient index structures in the same material system. Uncoated devices show COD values of 35 mW/μm. If coated, this should scale to about 90 mW/μm. The threshold current density is about 1000 A/cm² for 2-mm-long devices and a considerable part of it is probably due to recombination in the optical trap layer. Fundamental mode operation is limited to 120-180 mW for 6.5-μm-wide ridge waveguide uncoated devices and to 200-300 mW for 13.5-μm-wide ones, because of thermal waveguiding effects. These values are measured under pulsed conditions, 10 μs/l ms     

RF measurements and characterization of heterostructurefield-effect transistors at low temperatures

The RF performance of both conventional AlGaAs-GaAs and superlattice AlAs-GaAs heterostructure field-effect transistors (HFETs) has been investigated at 120 K, and the results are compared with room-temperature values. Both the system used for low-temperature RF measurements up to 12 GHz and the procedure used to extract the equivalent circuit from measured S-parameters of the packaged FET are described. The high-frequency performance of the HFETs is strongly improved at low temperatures but is sensitive to light due to the device structure. The problems of low-temperature measurement and the results of RF investigation are discussed. Although the gate lengths of the HFETs investigated are greater than 1 μm, the method and the results of the analysis can be transferred to submicron devices without any restrictions. Therefore, submicron superlattice HFETs may exhibit high power gain at 300 K as well as at lower temperatures both in the dark and under illumination     

A subharmonically injected LC delay line oscillator for 17-GHz quadrature LO generation

An injection-locked delay line oscillator multiplies a 5-6-GHz input by 3 to generate I/Q LO signals for 17-GHz wireless networking applications. I/Q errors caused by asymmetric injection are minimized by symmetric injection via a passive polyphase prefilter. Passive delay lines set the measured free-running frequency of the LC ring oscillator to 16.24 GHz. The measured locking range for a 0 dBm (50 /spl Omega/) input is 14.6-17.86 GHz. Input-to-output phase noise degradation is negligible, and I/Q amplitude and phase errors are <0.17 dB and <2/spl deg/, respectively. Power consumption of the 1.2/spl times/1.4 mm/sup 2/ 0.2 /spl mu/m SiGe BiCMOS testchip (excluding buffers) is 22 mW at 2.2 V.     

Ultraviolet, visible, and infrared response of PtSiSchottky-barrier detectors operated in the front-illuminated mode

The quantum efficiency of PtSi Schottky-barrier detectors has been measured as a function of wavelength from 0.23 to 7 μm. For front-illuminated PtSi/p-Si devices operated at low temperatures, quantum efficiencies of 40 to 70% are obtained in the ultraviolet (UV) and visible regions with little loss of the infrared (IR) photoresponse that is obtained for operation in the conventional back-illumination mode. For room-temperature operation of front-illumination PtSi/n-Si devices, the quantum efficiencies are approximately the same in the UV and visible regions, but the IR response decreases abruptly beyond the Si absorption edge. Room-temperature transmission and reflection measurements have been used to determine the values of the real and imaginary parts of the complex dielectric constant for PtSi at wavelengths from 0.2 to 3 μm. A simple model, used with these values and published values of the dielectric constant for Si, yields calculated quantum efficiencies in the UV and visible regions that agree quite well with the measured efficiencies. The temporal response of front-illuminated PtSi/p-Si detectors in the visible and IR regions is found to be fast enough for operation at video frame rates     

2014年APEC会议期间北京地区气溶胶成分遥感研究

大气气溶胶成分的改变对空气污染以及气候变化都有重要影响。遥感能在不破坏气溶胶自然状态的前提下探测气溶胶的成分特性。基于OPAC（optical properties of aerosols and clouds）模型对黑碳（BC）、水溶成分（WASO）、不可溶成分（INSO）、沙尘（DUST）四种气溶胶成分的微物理和光学特性的描述,利用太阳-天空辐射计获取的地基遥感观测,对2014年北京APEC会议前、会中、会后的气溶胶各成分含量及其光学厚度进行定量反演研究。结果显示,APEC会前、会中、会后的光学厚度（440 nm）平均值分别是0.72、0.25、0.57,会中的气溶胶光学厚度明显小于会前和会后,其中INSO成分的光学厚度贡献占主导地位。APEC会前BC、WASO、INSO、DUST质量浓度分别为0.8 μg/m3、139.6 μg/m3、184.2 μg/m3、194.3 μg/m3,APEC会中四种成分质量浓度分别为1.1 μg/m3、56.4 μg/m3、40.3 μg/m3、7.8 μg/m3,APEC会后质量浓度分别为1.0 μg/m3、126.6 μg/m3、157.1 μg/m3、30.9 μg/m3,除了BC成分在会议期间没有显著变化外,会中WASO、INSO、DUST成分的质量浓度数值明显低于会前和会后,,这说明APEC会议期间北京地区采取的保障措施对空气质量提升起到了较好的作用。利用AE-51黑碳仪对反演的BC质量浓度进行验证,发现遥感反演的BC质量浓度与在位观测具有良好的一致性,相关系数R2=0.68。     

Reduced timing jitter of two-section 1.55-μm laser diodes undergain-/loss-switching regime at multigigahertz rates

Picosecond pulses at multigigahertz frequencies with low timing-jitter have been generated from two-section 1.55-μm semiconductor lasers. A pulse jitter of ~1 ps was measured at a 5-GHz repetition rate with the laser diodes operated in gain-switching regime. More than 2x lower values were obtained in the loss-switching regime. A timing jitter model has been adapted to treat two-section laser diodes in the two regimes. The superiority of the loss-switching regime is explained by faster laser dynamics around threshold. A good agreement is obtained between calculations and timing jitter measurements     

23-GHz and 123-GHz soliton pulse generation using two CW lasers andstandard single-mode fiber

Theoretical and experimental results for 23-GHz and 123-GHz near-transform-limited soliton pulse generation at 1.55 μm is presented. The technique uses soliton compression of the beat signal between two CW lasers in standard commercially available single-mode optical fiber and does not require longitudinal variation of the fiber dispersion     

Avalanche multiplication characteristics ofAl0.8Ga0.2As diodes

The avalanche multiplication characteristics of Al_0.8Ga _0.2As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 μm to 0.025 μm. The electron ionization coefficient, α, is found to be consistently higher than the hole ionization coefficient, β, over the entire range of electric fields investigated. By contrast with Al_xGa _1-xAs (x⩽0.6) a significant difference between the electron and hole initiated multiplication characteristics of very thin Al_0.8Ga_0.2As diodes (w=0.025 μm) was observed. Dead space effects in the diodes with w⩽0.1 μm were found to reduce the multiplication at low bias below the values predicted from bulk ionization coefficients. Effective α and β that are independent of w have been deduced from measurements and are able to reproduce accurately the multiplication characteristics of diodes with w⩾0.1 μm and breakdown voltages of all diodes with good accuracy. By performing a simple correction for the dead space, the multiplication characteristics of even thinner diodes were also predicted with reasonable accuracy     

Photoresponse model for Si1-xGex/Siheterojunction internal photoemission infrared detector

A photoresponse model has been developed for the Si_1-xGe_x/Si heterojunction internal photoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. A Si_0.7Ge_0.3/Si HIP detector with a cutoff wavelength of 23 μm and an emission coefficient of 0.4 eV^-1 has been demonstrated. The model agrees with the measured detector response at λ>8 μm. The potential barrier determined by the model is in close agreement (difference ~4 meV) with the potential barrier determined by the Richardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottky detectors     

Estimation of surface roughness parameters from dual-frequencymeasurements of radar backscattering coefficients

A simple model was developed for estimating the surface roughness parameters of a bare soil field. The model uses a set of dual-frequency measurements of the field's radar backscattering coefficients, which can be matched to calculated results obtained with assumed values for the surface roughness parameters, as represented by the surface height standard deviation σ and its correlation lengths. Scatter plots of measured and calculated radar backscattering coefficients at the C -band (4.25-GHz) frequency versus those at L-band (1.5 GHz) show that it is feasible to estimate the surface roughness parameters using this technique. The estimated values for σ are in excellent agreement with those of measurements. However, there are discrepancies between the estimated and measured values for the correlation length L. For a very rough field, the geometrical optics model could be more appropriate for modeling the C-band data