InGaAs/InAlAs/InP collector-up microwave heterojunction bipolartransistors

Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J_c>30 kA/cm²) and high base-emitter junction saturation current density (J₀>10^-7 A/cm²) were achieved. A cutoff frequency of f _t=24 GHz and a maximum frequency of oscillation f _max=20 GHz at a collector current density of J₀ =23 kA/cm² were achieved on a nominal 5-μm×10-μm device     

InP/InAlAs/InGaAs quantum wires

Single InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapour deposition (MOCVD). We have found growth conditions where the InAIAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven.     

Microwave performance of InAlAs/InGaAs/InP MODFET's

Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy (MBE) and fabricated into FET's with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-µm gate devices. Extremely small S12and large S21led to a very largef_{max}of 62 GHz. These results represent the best reported figures for 1-µm devices in this material system and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors (MODFET's).     

Microwave performance of InGaAs/InAlAs/InP SISFETs

Microwave S-parameter measurements and equivalent-circuit modeling of In_0.53Ga_0.47As/In_0.52Al_0.48 As/InP semiconductor-insulator-semiconductor FETs (SISFETs) of 1.1-μm gate length are discussed. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory air-bridge gates. Their DC I-V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/ss, and extrinsic transconductance up to 220 ms/mm at room temperature. The maximum unity-current-gain frequency was 27 GHz. Gate resistance was found to be the dominant factor limiting microwave power gain     

InGaAs（InAIAs）／InP和InP／InAIAs湿法选择腐蚀研究

介绍了两种选择腐蚀液对InGaAs（InAlAs）／InP和InP／InAlAs异质结构材料选择腐蚀的实验结果，重点介绍在InAlAs上面生长InP的湿法选择腐蚀，用HCl：H3PO4：CH3COOH系列腐蚀液，InP／InAlAs选择比大于300。InP／InAlAs湿法选择腐蚀的结果可以很好应用到OEIC芯片制作中，并取得了较好的器件及电路结果。     

InGaAs(InAlAs)/InP和InP/InAlAs湿法选择腐蚀研究

介绍了两种选择腐蚀液对InGaAs(InAlAs)I/nP和InPI/nAlAs异质结构材料选择腐蚀的实验结果,重点介绍在InAlAs上面生长InP的湿法选择腐蚀,用HClH∶3PO4C∶H3COOH系列腐蚀液,InPI/nAlAs选择比大于300。InPI/nAlAs湿法选择腐蚀的结果可以很好应用到OEIC芯片制作中,并取得了较好的器件及电路结果。     

Optical effect in InAlAs/InGaAs/InP MODFET

Analytical results have been presented for an optically illuminated InAlAs/InGaAs/InP MODFET with an opaque gate. Partial depletion of the active region is considered. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to the generation of carriers. The surface recombination effect has also been taken into account. The results of I-V characteristics have been compared under dark conditions, since under illumination experimental results are not available. The offset voltage, sheet concentration, I-V, and transconductance have been presented and the effect of illumination discussed     

栅长90nm的晶格匹配InAlAs／InGaAs／InP HEMT

文章报道了90nm栅长的晶格匹配InP基HEMT器件。栅图形是通过80kV的电子束直写的,并采用了优化的三层胶工艺。器件做在匹配的InAlAs／InGaAs／InP HEMT材料上。当Vds=1．0V时,两指75μm栅宽器件的本征峰值跨导达到720ms／mm,最大电流密度为500mA／mm,器件的阂值电压为．0．8V,截止频率达到127GHz,最大振荡频率达到152GHz。     

Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators

The first successful monolithic integration of InGaAsP/InP distributed feedback (DFB) lasers and InGaAs/InAlAs multiple quantum well (MQW) optical modulators using LPE (liquid phase epitaxy)/MBE (modlecular beam epitaxy) hybrid growth reported. A 14% light output modulation is observed in this integrated device.     

Charge storage in InAlAs/InGaAs/InP floating gate heterostructures

Charge retention in floating gate InAlAs/InGaAs/InP field effect transistors is limited by lateral electron motion along the storage channel, a different direction for motion than found for AlAs/GaAs devices. Storage times as a function of temperature for the InP based alloy devices are reported and compared with similar AlAs/GaAs devices by using Poisson equation models.<>     

Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures

The admittance of ring planar diode Au/InGaAs/InP and Au/InGaAs/InAlAs heteronanostructures on i-InP has been studied. The structures are constituted by a silicon ??-doped layer and an InGaAs quantum well (QW) in InP or InAlAs epitaxial layers. An analysis of the capacitance-voltage and conductance-voltage characteristics yielded distribution profiles of the electron concentration and mobility in the vicinity of the QW and ??-doped layer. It is shown that lowering the temperature leads to an increase in the electron concentration and mobility in the QW.     

InAlAs/InGaAs/InP HFET with suppressed impact ionization usingdual-gate cascode-devices

InAlAs/InGaAs dual-gate-HFETs (DGHFETs) and single-gate-HFETs (SGHFETs) have been fabricated and characterized with special emphasis on reducing the impact ionization. For the first time it is shown that in the case of the DGHFET, due to the second gate (V_G2S=0 V), impact ionization can be totally prevented in the channel underneath the RF-driven gate without reduction of the RF-relevant parameters such as transconductance, output resistance and voltage gain. The electric field and the potential distribution in the channel are discussed using a nomogram and confirmed by 2-D simulation. According to V_G2S=0 V, a new cascode design is presented by directly connecting the second gate to the source (ground)     

InAlAs/InGaAs/InP HEMT欧姆接触研究

应用Au/Ge/Ni系金属在InAlAs/InGaAs/InP HEMT上成功制作了良好的合金欧姆接触。采用WN和Ti双扩散阻挡层工艺优化欧姆接触,在样品上获得了最低9.01×10-8Ω.cm2的比接触电阻,对应的欧姆接触电阻为0.029Ω.mm。同时,在模拟后续工艺环境的20min250°C热处理后,器件的欧姆接触性能无显著变化,表明其具有一定的温度稳定性。     

Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMT's

The concepts of the low-conductance drain (LCD) design approach for lattice-matched InAlAs/InGaAs/InP HEMTs are demonstrated for improved device performance. The tradeoff for LCD HEMT characteristics is a tapered current gain cutoff frequency f_t under high drain-to-source bias. This behavior is, in principle, due to the fact that the LCD approach increases the effective gate length of the HEMTs in exchange for reduced peak channel electric field. Two-dimensional PISCES simulation was used to optimize the improvements while simultaneously minimizing this undesirable effect for an LCD HEMT structure     

Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs

High electron mobility transistors (HEMTs) based on the InAlAs/InGaAs heterojunction grown lattice matched to InP were fabricated with 0.15 mu m T-shaped gates. The use of an undoped InGaAs cap layer in the epitaxial structure leads to excellent gate characteristics and very high transistor gain. At 95 GHz, a maximum available gain of 13.6 dB was measured. A maximum frequency of oscillation f/sub max/ of 455 GHz was obtained by extrapolating from 95 GHz at -6 dB/octave. This is the best reported gain performance for any transistor.<>     

An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

This paper describes the design and performance of an 80-Gbit/s 2:1 selector-type multiplexer IC fabricated with InAlAs/InGaAs/InP HEMTs. By using a double-layer interconnection process with a low-dielectric insulator, microstrip lines were designed to make impedance-matched, high-speed intercell connection of critical signal paths. The record operating data rate was measured on a 3-in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time. The obtained circuit speed improvement from the previous result of 64 Gbit/s owes much to this high-speed interconnection design     

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy

InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 ?m has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers.     

Thermal Analysis of InAIAs／InGaAs／InP Mid——infrared QCLs Operating in CW Mode

A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid--infrared quantum cascade lasers (QCLs) based on finite -- element method (FEM) is presented. The thermal distribution of the QCLs on substrate--side or epilayer--side mounting forms is simulated and the results are compared. Results show that the epilayer--side mounting form has much better heat dissipation capability than the substrate--side mounting.     

Thermal Analysis of InAlAs/InGaAs/InP Mid-infrared QCLs Operating in CW Mode

A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers (QCLs) based on finite-element method (FEM) is presented. The thermal distribution of the QCLs on substrate-side or epilayer-side mounting forms is simulated and the results are compared. Results show that the epilayer-side mounting form has much better heat dissipation capability than the substrate-side mounting.     

InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process

The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4 mu m gate length, an intrinsic transconductance of 560 mS/mm and f/sub T/ and f/sub max/ values of 16 and 40 GHz, respectively, were achieved.<>