Velocity saturation in the collector of Si/GexSi1-x/Si HBT's

The effects of velocity saturation on the unity gain-bandwidth product f_t and transconductance g_m of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) with Ge_xSi_1-x bases are described and simulated. For the n-p-n device, velocity saturation combined with a valence-band offset at the base-collector junction causes accelerated g_m and f_t rolloff for current densities greater than the knee current for the Kirk effect. For the p-n-p device, the g_m and f_t are degraded for all current densities. These limitations combine with the limits imposed by dislocation formation due to strain in the pseudomorphic layer to impose constraints on the design of Si/Ge_x Si_1-x/Si HBTs     

Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO/sub 2/ dielectrics. A MIM capacitor with capacitance density of 6 fF/spl mu/m/sup 2/ and quadratic VCC of only 14 ppm/V/sup 2/ has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm/sup 2/ up to 4 V at 125 /spl deg/C.     

Bidirectional bistability in n-p-nSi/Si1-xGex/Si structures

Several structures of n-Si/p-Si_1-xGe_x/n-Si double heterojunction bipolar transistors (DHBTs) with strained thin base, fabricated by molecular beam epitaxy (MBE), are described. Negative differential resistance (NDR) phenomena-a strong and symmetric bidirectional bistability modulated by base bias, together with a multistep characteristic in collector current versus emitter-collector bias voltage in the devices with very thin base-were observed at room temperature. The physical origins are analyzed. The results are compared with the characteristics of n-Ga_1-xA1_xAs/p-GaAs/n-GaAs single HBTs (SHBTs)     

Spectroscopic and stimulated emission characteristics of Nd/sup 3+/ in transparent Y/sub 2/O/sub 3/ ceramics

Nd:Y/sub 2/O/sub 3/ ceramic materials have been synthesized using the vacuum sintering technique with the raw materials prepared by the nanocrystalline methods. The TEM measurements reveal the excellent optical quality of the ceramic with low pore volume and narrow grain boundary. The radiative spectral properties of Nd:Y/sub 2/O/sub 3/ ceramic have been evaluated by fitting the Judd-Ofelt model with the absorption and emission data. Individual Stark levels for /sup 2s+1/L/sub J/ manifolds are obtained from the absorption and fluorescence spectra and are analyzed to identify the stimulated emission channels possible in the Nd:Y/sub 2/O/sub 3/ ceramic. Laser performance studies reveal two stimulated emission channels at 1074.6- and 1078.6-nm wavelengths with stimulated emission cross sections of 7.63/spl times/10/sup -20/ and 6.35/spl times/10/sup -20/ cm/sup 2/. With 1.5 at % Nd:Y/sub 2/O/sub 3/ ceramic acting as a laser medium, we obtained a slope efficiency of 32% with 160-mW output power and pump threshold of 200 mW at 1078.6 nm.     

ARROW's in KTiOPO/sub 4/

Antiresonant reflecting optical waveguides (ARROW's) have been designed and fabricated in z-cut KTiOPO/sub 4/ (KTP) by e-beam direct writing and double Rb/spl rlhar2/K ion exchange. Strong diffusion anisotropy allows the realization of ARROW's in this electrooptical crystal. It was found, that argon-ion dry etching of the crystal surface prevents the ion exchange process totally. Using this as a new masking technique, antiresonant reflectors with lateral tolerances of less than 0.1 /spl mu/m could be realized. Typical quasi-single-mode waveguiding and attenuation of about 1.0 dB/cm were observed at /spl lambda/=860 mm, which are in good agreement with our simulations made by the vectorial finite element method and effective index approach.     

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

The decrease of transconductance g/sub m/ and current gain cutoff frequency f/sub T/ at high drain current levels in AlGaN/GaN high-electron mobility transistors (HEMTs) severely limits the linearity and power performance of these devices at high frequencies. In this paper, the increase of the differential source access resistance r/sub s/, with drain current is shown to play an important role in the fall of g/sub m/ and f/sub T/. The increase of r/sub s/ occurs due to the quasi-saturation of the electron velocity in the source region of the channel at electric fields higher than 10 kV/cm. This has been confirmed by both experimental measurements and two-dimensional drift-diffusion simulations. Through simulations, we have identified HEMT structures with source implanted regions (or n/sup ++/ cap layers) as good candidates in order to increase the linearity of the g/sub m/ and f/sub T/ versus current profile.     

Piezoresistive effect in GaAs/InxGa1−xAs/AlAs resonant tunneling diodes for application in micromechanical sensors

The current–voltage characteristics of GaAs/In_xGa_1−xAs/AlAs resonant tunneling diodes (RTDs) are a function of stress, and the current–voltage changes of RTDs with stress are attributed to the piezoresistive effect in RTDs. In order to study the piezoresistive effect in RTDs for application in micromachined mechanical sensors, the beam-mass structure based on RTDs is designed, fabricated and tested by the Wheatstone bridge test circuit. The test results show that the piezoresistive sensitivity of RTDs can be adjusted through the bias voltage, and the maximal piezoresistive sensitivity of RTDs with bias voltage at 0.618 V is 7.61×10⁻¹¹ Pa⁻¹, which is two orders higher than the minimal piezoresistive sensitivity (2.03×10⁻¹³ Pa⁻¹) of RTDs with bias voltage at 0.656 V, and is also higher than the piezoresistive sensitivity of silicon material (5.52×10⁻¹¹ Pa⁻¹).     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Evidence of enhanced hypersensitive transition in erbium-doped fibers with different Al/sub 2/O/sub 3/ content

Precise spectroscopic absorption measurements of erbium-doped aluminosilicate fibers with different Al/sub 2/O/sub 3/ content were performed with the Judd-Ofelt analysis. From the Judd-Ofelt analysis, the /spl Omega//sub 2/ parameters of Er/sup 3+/ ions in these fibers were found to be about three times as large as those in aluminosilicate bulk glasses. The enhancement of the /spl Omega//sub 2/ parameters led to much stronger line strength of hypersensitive transitions in a fiber form than in a bulk glass form. This indicates that the distortion of the ligand field around the Er/sup 3+/ ions are more enhanced in a fiber form than in a bulk glass form. Furthermore, the /spl Omega//sub 6/ and the /spl Omega//sub 2/ parameters increased with an increase of q content up to 20 000 ppm. This Al/sub 2/O/sub 3/-content dependence of the /spl Omega//sub 6/ parameter was consistent with that of the line strength and the spontaneous emission probabilities of the transition corresponding to the /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/.     

Effect of strain on microwave noise characteristics in In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (0.53

Chough  K.B. Hong  W.-P. Florez  L. Song  J.I. 《Electronics letters》1993,29(15):1338-1340

MESFET-like transferred-electron devices in In/sub 0.53/Ga/sub 0.47/As

In/sub 0.53/Ga/sub 0.47/As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In/sub 0.53/Ga/sub 0.47/As. The triggering of single dipole domains in the device was demonstrated.<>     

BV/sub CEO/--BV/sub CBO/ separation and sharpness of breakdown in high-speed bipolar transistors

The effect of secondary impact ionization by the noninitiating carrier on the near avalanche behavior of high-speed n-p-n bipolar transistors is studied. We show that secondary collector ionization by generated holes traveling back toward the base layer significantly reduces BV/sub CBO/ if the hole ionization coefficient is higher than that of electrons [/spl beta//sub p/(E)>/spl alpha//sub n/(E)]: positive feedback associated with a strong secondary ionization sharpens the breakdown characteristic by speeding up carrier multiplication and decreases separation between the open-base collector-emitter (BV/sub CEO/) and the open-emitter base-collector (BV/sub CBO/) breakdown voltages. The effect of secondary ionization on the BV/sub CEO/-BV/sub CBO/ separation has not previously been described. Multiplication coefficient comparisons for representative InP, GaAs, and Si collectors indicate all structures can sustain low-current above BV/sub CEO/ operation from a transport (nonthermal) point of view, although the different degrees of secondary ionization in various semiconductors lead to fundamental differences when InP is compared to GaAs and Si since for the latter materials /spl beta//sub p/(E)相似文献   

Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping

A significant (2-5*) reduction in 1/f noise was observed in In/sub 0.53/Ga/sub 0.47/As photodetector arrays read out by a PMOS multiplexer, when the epitaxial InP cap layer doping was changed from undoped to sulfur-doped n type of about 3*10/sup 16/ cm/sup -3/. A further decrease was observed when the InP buffer layer was also changed from undoped to sulfur-doped n type of about 5*10/sup 17/ cm/sup -3/. Data was presented for the variation of 1/f noise, within a temperature range of 18 degrees C to -40 degrees C. Surface states at the InP cap/SiN interface appears to be the primary source of 1/f noise, with the bulk states at the n/sup -/In/sub 0.53/Ga/sub 0.47/As buffer hetero-interface as a secondary source. Increased n-type doping in the high-bandgap InP cap and buffer layers may reduce electron trapping, and thus 1/f noise. The measured noise spectrum of InGaAs photodetectors varies as f/sup y/ with y being approximately -0.45 for device structures with doped and undoped InP can layers. For a doped InP buffer layer, this value of y is -0.3.<>     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.     

GSM/GPRS/TD-SCDMA组网中的互操作

介绍了GSM／GPRS/TD—SCDMA组网中的互操作流程，结合TD—SCDMA网络的不同部署时期探讨了互操作的策略和实现。目前已有公司支持TD—SCDMA和GSM间的跨系统漫游，即将支持TD—SCDMA和GSM间的跨系统切换，为运营商提供了一套完整的GSM／GPRS／TD—SCDMA系统间解决方案。     

Suppression of boron penetration in p-channel MOSFETs usingpolycrystalline Si1-x-yGexCy gatelayers

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si_1-x-yGe_xC_y gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si_1-xGe gate layers. Boron accumulates in the poly Si_1-x-yGe_xC_y layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si_1-x-yGe_xC_y appears to be electrically active, providing similar device performance compared to the poly Si or poly Si_1-xGe_x gated devices     

Low-frequency noise in submicrometer MOSFETs with HfO/sub 2/, HfO/sub 2//Al/sub 2/O/sub 3/ and HfAlO/sub x/ gate stacks

Low-frequency noise measurements were performed on p- and n-channel MOSFETs with HfO/sub 2/, HfAlO/sub x/ and HfO/sub 2//Al/sub 2/O/sub 3/ as the gate dielectric materials. The gate length varied from 0.135 to 0.36 /spl mu/m with 10.02 /spl mu/m gate width. The equivalent oxide thicknesses were: HfO/sub 2/ 23 /spl Aring/, HfAlO/sub x/ 28.5 /spl Aring/ and HfO/sub 2//Al/sub 2/O/sub 3/ 33 /spl Aring/. In addition to the core structures with only about 10 /spl Aring/ of oxide between the high-K dielectric and silicon substrate, there were "double-gate oxide" structures where an interfacial oxide layer of 40 /spl Aring/ was grown between the high-K dielectric and Si. DC analysis showed low gate leakage currents in the order of 10/sup -12/ A(2-5 /spl times/ 10/sup -5/ A/cm/sup 2/) for the devices and, in general, yielded higher threshold voltages and lower mobility values when compared to the corresponding SiO/sub 2/ devices. The unified number-mobility fluctuation model was used to account for the observed 1/f noise and to extract the oxide trap density, which ranged from 1.8 /spl times/ 10/sup 17/ cm/sup -3/ eV/sup -1/ to 1, 3 /spl times/ 10/sup 19/ cm/sup -3/ eV/sup -1/ somewhat higher compared to conventional SiO/sub 2/ MOSFETs with the similar device dimensions. There was no evidence of single electron switching events or random telegraph signals. The aim of this paper is to present a general discussion on low-frequency noise characteristics of the three different high-K/gate stacks, relative comparison among them and to the Si-SiO/sub 2/ system.     

Low-frequency noise in submicrometer MOSFETs with HfO/sub 2/, HfO/sub 2//Al/sub 2/O/sub 3/ and HfAlO/sub x/ gate stacks

Low-frequency noise measurements were performed on p- and n-channel MOSFETs with HfO/sub 2/, HfAlO/sub x/ and HfO/sub 2//Al/sub 2/O/sub 3/ as the gate dielectric materials. The gate length varied from 0.135 to 0.36 /spl mu/m with 10.02 /spl mu/m gate width. The equivalent oxide thicknesses were: HfO/sub 2/ 23 /spl Aring/, HfAlO/sub x/ 28.5 /spl Aring/ and HfO/sub 2//Al/sub 2/O/sub 3/ 33 /spl Aring/. In addition to the core structures with only about 10 /spl Aring/ of oxide between the high-/spl kappa/ dielectric and silicon substrate, there were "double-gate oxide" structures where an interfacial oxide layer of 40 /spl Aring/ was grown between the high-/spl kappa/ dielectric and Si. DC analysis showed low gate leakage currents in the order of 10/sup -12/A(2-5/spl times/10/sup -5/ A/cm/sup 2/) for the devices and, in general, yielded higher threshold voltages and lower mobility values when compared to the corresponding SiO/sub 2/ devices. The unified number-mobility fluctuation model was used to account for the observed 1/f noise and to extract the oxide trap density, which ranged from 1.8/spl times/10/sup 17/ cm/sup -3/eV/sup -1/ to 1.3/spl times/10/sup 19/ cm/sup -3/eV/sup -1/, somewhat higher compared to conventional SiO/sub 2/ MOSFETs with the similar device dimensions. There was no evidence of single electron switching events or random telegraph signals. The aim of this paper is to present a general discussion on low-frequency noise characteristics of the three different high-/spl kappa//gate stacks, relative comparison among them and to the Si--SiO/sub 2/ system.     

Effect of Mg doping on the superconducting properties of Cu/sub 1-x/Tl/sub x/Ba/sub 2/Ca/sub 3-y/Mg/sub y/Cu/sub 4/O/sub 12-/spl delta//

Superconducting properties of Cu/sub 1-x/Tl/sub x/Ba/sub 2/Ca/sub 3-y/Mg/sub y/Cu/sub 4/O/sub 12-/spl delta// (Cu/sub 1-x/Tl/sub x/Mg/sub y/-1234) material have been studied in the composition range y=0,1.5,2.25. The zero resistivity critical temperature [T/sub c/(R=0)] was found to increase with the increased concentration of Mg in the unit cell; for y=1.5 [T/sub c/(R=0)]=131 K was achieved which is hitherto highest in Cu/sub 1-x/Tl/sub x/-based superconductors. The X-ray diffraction analyses have shown the formation of a predominant single phase of Cu/sub 0.5/Tl/sub 0.5/Ba/sub 2/Ca/sub 3-y/Mg/sub y/Cu/sub 4/O/sub 12-/spl delta// superconductor with an inclusion of impurity phase. It is observed from the convex shape of the resistivity versus temperature measurements that our as-prepared material was in the region of carrier over-doping, and the number of carriers was optimized by postannealing experiments in air at 400/spl deg/C, 500/spl deg/C, and 600/spl deg/C. The T/sub c/(R=0) was found to increase with postannealing and the best postannealing temperature was found to be 600/spl deg/C. The mechanism of increased T/sub c/(R=0) is understood by carrying out infrared absorption measurements. It was observed through softening of Cu(2)-O/sub A/-Tl apical oxygen mode that improved interplane coupling was a possible source of enhancement of T/sub c/(R=0) to 131 K.     

Refractive index step and optical confinement in Ga/sub 0.86/In/sub 0.14/As/sub 0.13/Sb/sub 0.87//Ga/sub 0.73/Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ double heterostructure lasers emitting at 2.2 mu m

Using theoretical fitting to measured transverse far field patterns in Ga/sub 0.86/In/sub 0.14/As/sub 0.13/Sb/sub 0.87//Ga/sub 0.73/Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ DH lasers emitting at 2.2 mu m the authors estimated the value of the active layer refractive index as 3.78. This value, higher than assumed earlier based on theoretical calculations, ensures good optical confinement for this kind of heterostructure and provides a good theoretical fit with the authors' experimental data of threshold current density against active layer thickness.<>