生理浓度的活性氧对抗辐射菌的影响

本研究探讨了生理状态下抗辐射菌(Deinococcusradiodurans,DR)内活性氧(Reactiveoxygenspecies,ROS)的释放;生理状态下释放的ROS在DR增殖中的作用;以及受不同剂量照射下ROS的释放及其作用的改变。受电离辐射后DR的O2释放随着剂量的升高而增加,并在700Gy时达到最高值,当剂量超过1kGy.-时O2释放即迅速下降,加入二亚苯基碘(Diphenyleneiodonium,DPI)后,O2释放显著降低,且照射.-.-后O2的释放均未超过对照组。.-受照后DR的增殖率随剂量的增大而上升,剂量为1kGy时增殖率达到最高点,而剂量超过1kGy时增殖率迅速下降;达3kGy时增殖率低…     

60Coγ射线辐照对耐辐射菌Deinococcus radiodurans 蛋白质含量的影响

研究了耐辐射菌对60Coγ射线的辐射抗性,观察不同剂量照射后,细菌中蛋白质含量、辐照剂量及照射后培养不同时间的关系.应用平板菌落计数法,计数不同剂量辐照后的克隆数,计算存活率,绘制剂量-存活曲线.采用紫外分光光度法检测细菌中蛋白质的含量.结果表明,耐辐射菌的存活曲线呈肩型,具有极强的辐射抗性.蛋白质的含量随着照射剂量的升高而不断增加,当辐射剂量达到5kGy时,蛋白质含量最高(p＜0.01);若受照剂量＞5kGy时,则蛋白质含量随受照射剂量的升高而逐渐降低.5kGy辐照后,随照射后温育时间的延长,蛋白质含量不断降低,培养时间为6h,蛋白质的含量最低(p＜0.01),与对照组(未受照射组)相比,无显著性差异(p＞0.05).     

基于α-Αl_2O_3:C辐射发光的辐射监测技术研究

本文利用OSL/RL光纤耦合监测装置,针对RL信号测量特点,进行了滤光片优化改进设计,对α-Αl_2O_3:C探测器的RL性能进行了实验测试,并提出了一种解决RL灵敏度变化的方法。实验结果表明其辐射发光在0.01 mGy/h~15 Gy/h范围内具有良好的线性剂量响应。α-Αl_2O_3:C探测器的辐射发光灵敏度与吸收剂量有关,吸收剂量达到28 Gy时,发光灵敏度增加约35%。灵敏度最快增加速度为4.7%/Gy。α-Αl_2O_3:C探测器可以对辐射环境剂量率进行实时监测报警。     

Development of a beta radioluminescence nuclear battery

A nuclear battery consisting of a beta source,a phosphor layer and a photovoltaic device was prepared.Planar phosphor layers were synthesized through physical precipitation of ZnS:Cu,ZnS:Ag or SrAl_2O_4:Eu~(2+),Dy~(3+)phosphors.The radioluminescence(RL)spectra were used to analyze the RL effects of the phosphor layers under beta-particle excitation.Feasibility of using the materials as intermediate absorbers in the beta batteries was studied.TheⅠ-Ⅴcharacteristics of beta RL nuclear batteries with different phosphor layers were tested using~(63)Ni or~(l47)Pm beta sources.The output power of zinc sulfide matrix phosphor layer was better than that of rare-earth element oxides.In addition,a thin aluminum reflective layer was vacuum-evaporated on the phosphor layers to improve the efficiency of beta RL nuclear batteries,and the results were discussed.     

低能N+注入诱导大肠杆菌的16S rRNA遗传进化

为了探究低能N⁺注入对大肠杆菌16S rRNA遗传进化与耐药表征的作用,本研究利用低能N⁺注入诱变筛选耐药大肠杆菌,通过基因组de novo测序获得其16S rRNA基因序列,通过K-B法检测诱变菌株的耐药特征。结果共诱变获得了25株耐药菌株,其中5株诱变菌16S rRNA基因分别出现片段缺失,点突变(A257C),GC%含量增高,二级结构变异,并获得多药耐药特性。结果提示：低能N⁺注入可以驱动大肠杆菌16S rRNA基因的随机突变和进化,进而调节耐药基因从头合成或变异,使大肠杆菌耐药性改变。     

医疗保健产品辐照灭菌剂量设定方法实践应用的研究

探索辐照灭菌剂量设定方法,为合理选取辐照灭菌剂量提供依据.在实践基础上,对来自全国52个厂家的148种不同种类出口医疗保健产品分别进行初始污染菌检测,并据此进行ISO11137剂量设定.同时以公式法计算辐照吸收剂量.结果发现,在相同初始污染菌条件下,依据ISO11137方法设定的灭菌剂量大于公式法.当初始污染菌小于1000 cfu/unit时,两者的剂量均小于VDmax(-1)法设定的剂量.研究认为,对于常规生产的辐射灭菌产品,其灭菌剂量应首选ISO11137方法;对于低污染产品的灭菌,应首选VDmax(-1)法;在中国如应用公式法设定灭菌剂量,其安全性应受到质疑.     

产维生素K_2黄杆菌复合诱变及发酵优化

利用亚硝基胍(NTG)和低能氮离子束(N+)注入复合诱变方法,获得产维生素K2黄杆菌(Flavobacterium sp.)菌株,并对突变菌株发酵条件进行优化,进一步提高黄杆菌产维生素K2的能力。确定最佳诱变条件为:NTG处理浓度0.8 mg/m L,处理时间20 min;N+离子注入能量15 ke V,80(2.6×1013 cm?2),突变菌维生素K2产量为6.12 mg/L,较原始菌株提高了159%。突变菌传代6次,维生素K2产量稳定。进一步优化突变菌发酵条件,确定最优发酵条件为:温度37℃、起始p H=7.0,装液量30 m L/250 m L,接种量2%、摇床转速120r/min,发酵后72 h添加3 mg/m L花生衣(Arachis hypogaea)作为诱导物,优化后的菌株维生素K2产量较优化前提高31%。     

低能离子注入在花生四烯酸(AA)高产菌株选育中的研究

利用低能离子束生物技术对花生四烯酸产生菌(Mortierella alpina)进行诱变选育。研究表明,在离子注入(10keV,3×1014N+/cm2)条件下,后代菌株离散程度明显高于自然分离。经连续诱变处理,最终获得一株花生四烯酸高产菌I49-N18,该菌每升培养液可得生物量26.3g,干菌体中油脂含量为33.8％,其中花生四烯酸的含量占总脂的52.36％。而其AA产量高达4.66g/L,比对照N7菌株产量提高126.2％,且继代遗传功能稳定,表明I49-N18是一株极具工业化前景的高产菌,同时证明离子注入是一种有效的诱变手段。     

应用等离子体辐射技术选育柔红霉素产生菌——天兰淡红链霉菌

报道了抗肿瘤抗生素柔红霉素产生菌———天兰淡红链霉菌激光株经能量为 6 0 - 85keV ,辐射剂量为 9.6× 10 9- 1.5× 10 11/cm2 ,(辐射时间 5- 2 0s)的N+等离子体诱变处理后 ,拟合了该菌致死率 (D)与辐射剂量 (M)的关系式D =1-Ke-MP(k ,P为相关系数 ) ,该式符合辐射生物学中的单击曲线。经摇瓶筛选后 ,获得 1株高产柔红霉素突变株 137,在生产罐上应用 ,其柔红霉素效价较亲株提高了 2 5.8%     

Al_2O_3:C晶体辐射发光剂量特性的数值模拟

在医学放射治疗上可以利用Al2O3:C晶体产生的辐射发光(Radio-luminescence,RL)测量放射治疗的剂量率。本文采用双电子陷阱双复合中心动力学模型对Al2O3:C晶体的辐射发光剂量特性做了数值模拟,给出了β射线辐照Al2O3:C晶体过程中各能级上载流子和RL产生的动态过程,并首次数值模拟了F+中心浓度和高剂量辐照对RL的影响。模拟结果表明:β射线连续辐照Al2O3:C时其产生的RL强度由初始值达到平衡值,且初始值和平衡值都与剂量率成正比,随着Al2O3:C晶体中F+中心浓度的增加,RL强度增强,初始值和平衡值都增加,最后给出了高剂量辐照Al2O3:C晶体对RL的影响。文章中数值模拟的结果和先前实验结果相一致,同时模拟结果对Al2O3:C晶体在制备过程中如何提高RL强度从理论上指明了方向。     

Study of the luminescent properties of KMgF3:Sm

The photoluminescence (PL), radioluminescence (RL) and thermoluminescence (TL) of KMgF₃ doped at several Sm concentrations have been investigated. The maximum TL and RL yield under beta irradiation has been observed in KMgF₃:Sm 0.02 mol%. The glow curve of this doped perovskite is made up of at least five peaks located at 95, 120, 160, 270, and 330 °C. The third peak appears to be the most convenient for personal or environmental dosimetry, since it shows no fading and good linearity within the investigated dose range (0.020-200 Gy). From the RL and PL spectra it has been found that most of KMgF₃:Sm emission is located at wavelengths higher than 650 nm. This emission, which is characteristic of Sm²⁺, makes this doped compound attractive for fiber-optic dosimetry.     

Radiation dose detection using a high-power portable optically stimulated luminescence real-time reading system

Optically stimulated luminescence(OSL) reading systems are becoming smaller and capable of real-time detection. To improve real-time and multipurpose radiation dosimetry readings, we built a real-time continuous-wave(RCW) OSL reading system. This system is both small and lightweight, and it employs powerful laser excitation(478 mW/cm~2) at the dosimetry probe location. We investigate the possibility of using the RCW mode to read the radiation luminescence(RL) or OSL by using a singlecrystal Al_2O_3:C dosimeter in a low-dose-rate137 Cs y field.Our results indicate that the RL/OSL follows a stable and uniform distribution. The minimum detected doses associated with the RL, OSL, and RL + OSL signals are2.1 9 10~(-2), 3.17 9 10~(-1), and 5.7 9 10~(-2) l Gy, respectively. This device provides a framework for the future development of applications for practical radiation dose measurements.     

Radiation-induced luminescence in magnesium aluminate spinel crystals and ceramics

Radioluminescence (RL) and thermoluminescence (TL) in spinel crystals and ceramics were investigated to elucidate the radiation-induced electronic processes in single crystals grown by Verneuil and Czochralski methods as well as transparent and translucent ceramics. Both RL and TL spectra demonstrate a UV-band related to electron–hole recombination luminescence at intrinsic defects; green and red luminescence are identified with emission of Mn²⁺- and Cr³⁺-ions, respectively. The kinetics of growth of different RL luminescence bands depending on dose at the prolonged X-irradiation shows the competitive character of charge and energy transfer between defects and impurity ions. The dependence of RL intensity on the temperature of the sample was measured in the range of 300–750 K and compared with TL for different emission bands. The variety of maxima in the temperature dependence of RL and in the glow curves of TL measured for different luminescence bands in spinels of different origins and crystalline forms is used to show that charge carrier traps and luminescence centers are not isolated defects but are complexes of defects and impurities. The formation, structure and properties of these complexes depend on the processing conditions.     

氚光源及其研究进展

氚光源是利用放射性核素氚制成的自发光装置,其使用寿命长、光强稳定、无需电源,是黑暗条件下小视野照明的优良光源,在军事和民用领域具有良好的应用前景。传统的玻璃管型氚灯是应用广泛的氚光源。由于氚气体对β射线的能量自吸收、荧光粉蔽光性和玻璃管有破裂可能等缺点,限制了氚灯性能的进一步提高。本文介绍了氚发光装置的发光机理、发展历史、安全评价以及国内外应用现状;讨论了传统玻璃管型氚灯亮度的影响因素,分析了目前氚灯存在的问题,介绍了国内外氚光源研究改进工作,并展望了国内氚光源研究与应用前景。     

Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing

High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 × 10¹² e⁻/cm². The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the EI produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEI.     

电荷分配法用于丝室的若干问题

本文讨论了阻容扩散模型的局限性;给出了考虑丝电感时的电荷分配过程的解析解;证明了有终端负载电阻时的电荷分配公式Q_a/Q_b=R(l-x_0) R_L/Rx_O R_L。     

右侧卧位对左室下壁心肌衰减校正价值的初探

为探讨右侧卧位对左室下壁心肌衰减校正和心梗诊断的价值,对31名正常者和22名冠心病病人同时进行了仰卧位和右侧卧位的^99mTc-MIBI静息心肌显像,病人均作了冠状动脉血管造影。观察正常者在不同体位时下壁形态并通过靶心图计算各区象素计数。判定不同体位各供血区病变诊断的敏感性和特异性。结果表明,右侧卧位时下壁形态显示较好而且计数明显增高,P＜0．05,同时对右冠状动脉病变的敏感性和特异性分别为100％和81．8％,较仰卧位明显提高,结果提示,右侧卧位不仅可使下壁衰减得以校正而且可提高对心梗诊断的准确性。     

Strain ageing of quenched zircaloy-2

The stain ageing behaviour of quenched Zircaloy-2 has been studied in the temperature range 150 to 475°C. Quenching from 750°C enhanced the strain ageing response at 300° C and suppressed it at ~450°C compared with the behaviour of annealed and slow cooled Zircaloy-2. Increasing the quenching temperature in the range 750 to 850°C increased the strain ageing response at all test temperatures. The yield stress and tensile strength increased with quenching temperature whereas the ductility was decreased.The enhanced strain ageing at 300°C is thought to be due to the presence of interstitial-interstitial atom pairs. The suppression of strain ageing at ~450°C is considered to be due to trapping of Fe atoms by quenched-in defects.     

Effects of Temperature,Strain Rate,and Specimen Orientation on Localized Plastic Deformation of Irradiated Zircaloy-2

Both transverse and longitudinal Zircaloy-2 specimens irradiated up to 1.2 × 10²⁰ n/cm² (E> 1 MeV) were tested in tension with strain rates ranging 1.1 × 10^-4~1.1 × 10^-2 s^-1 in the temperature range 200~400°C. Detailed observations of the specimen wall surface and microstructure were also made on samples deformed to various amounts of plastic strain, with a projector and an optical microscope.

It was found that localized plastic deformation bands occurred in the temperature range approximately 280~330°C during straining to the ultimate tensile stress. Results also showed that the strain rate dependence of tensile properties, particularly the strain to the ultimate tensile stress, was associated with changes in the number and width of the localized deformation band with strain rates at a temperature of 300°C at which localized bands occurred. From a break of the straight line tracing the true stress-true plastic strain relationship, it was established that the onset stress and strain of the localized deformation band could be estimated.

The effect of specimen orientation on localized deformation band was also discussed on the basis of differences in the onset stress and strain between the transverse and longitudinal specimens.