基于功率MOS型场效应管的4 kV纳秒脉冲源

为了用固体开关器件替代国外氢闸流管,开展了大功率高速高压半导体固体开关及与其相配的高速高压组合电路研究。利用功率MOS型场效应管的开关原理,提出了对功率MOS型场效应管的栅极"过"驱动技术,提高了功率MOS型场效应管的开关速度,研制出基于功率MOS型场效应管的输出脉冲幅度大于4 kV,前沿小于10 ns,脉冲宽度大于100 ns的高压快脉冲驱动源。     

绝缘栅双极型晶体管电源高效率技术

绝缘栅双极型晶体管(IGBJT)是一种结合了MOS功率管和BJT功率管特点的新型器件。它保留了MOS功率管的全部优点,如输入阻抗高和电容小、可与逻辑控制电平兼容、高速度和热稳定性好,解决了高耐压和低导通电阻之间的矛盾;同时又具有BJT功率管高压和耐过流的优点。应用IGBJT组成中、大功率的开关稳压电源是新一代的电源高效率技术。下面就IGBJT工作原理和它在开关稳压电源中的应用实例进行分析。     

用于反激式变换器的BJT功率管驱动电路的设计

为反激式变换器BJT功率管设计了一种驱动电路。针对电流镜复制的精确度,设计了运放、MOS管组成的深度负反馈环路和共源共栅结构对电路进行钳位,使电流精确复制到功率管基极;针对BJT管较慢的开关速度,配合数字控制,缩短功率管状态转换所需时间,降低了功率管损耗。在CSMC 18μm 18 V工艺下,利用Hspice软件进行仿真,结果表明,BJT功率管工作在饱和区,开关转换速度增强,满足了反激式变换器对BJT功率管开关速度的要求。     

用于HF激光器的气体火花开关特性研究

气体火花开关是放电激励脉冲HF激光器的关键部件之一,其性能直接影响激光器的正常运转。本文介绍了气体火花开关的设计,并对其静态自击穿特性和动态触发特性进行了实验研究。实验结果表明:在开关工作气压为0.1~0.4 MPa情况下,静态自击穿电压约10~30 kV,且稳定性较好;在触发电压前沿约20 ns,幅值约45 kV的情况下,欠压比大于80%时,开关时延小于120 ns,开关抖动小于6 ns;开关具有较大的工作范围,约为55%~60%。开关用于放电激励脉冲HF激光器,实现了激光器稳定运行。     

一款新型电荷泵功率管驱动电路

提出了一款新型功率管驱动电路。P沟道功率管驱动电路加入了防死锁模块防止了死锁的出现,提高了瞬态响应;N沟道功率管驱动电路加入了附加的充电支路,提高了驱动能力和瞬态响应。整个电路基于0.6μm BCD工艺,在Cadence Spectre下仿真。和传统的功率管驱动电路相比,新的P沟道功率管驱动电路的上升时间由60ns减少到14ns,下降时间由240ns减少到30ns,并且功耗从2mW减少到1mW;新的N沟道功率管驱动电路的上升时间由360ns减少到27ns,功耗从1.1mW减少到0.8mW。     

基于滤波器综合分析法的118 GHz单刀二掷开关（英文）

采用滤波器综合分析方法,基于分立式AlGaAs/GaAs异质结PIN二极管,根据其等效寄生参数,综合出单刀二掷开关集总参数滤波器模型,以此分析其等效分布参数电路,设计出了118GHz星载辐射计用单刀二掷开关准单片,开关电路尺寸6×2.5×0.1mm~3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究,研制出了低插损的118GHz开关模块,在110~120GHz,测得开关插损小于3.0dB,插损典型值2.6dB;开关隔离度大于22dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18ns、20ns、10ns、18ns,该准单片作为通道切换开关可集成应用于118GHz收发组件中.     

一种基于数字逻辑控制的低损耗双半桥驱动芯片

设计了一种集成双半桥和四功率开关的驱动芯片。采用双路对称设计,每一路可单独控制使能、自举和驱动。芯片内部采用高精度的基准源以及LDO电路,同时具有欠压死锁、过压保护和过温保护功能。死区控制可避免上下功率管直通大电流,自举设计可使上功率管的开启电压达到5 V,降低了功率管自身的损耗,使功率管输出达到11.90 V。采用TSMC 0.18μm BCD工艺进行流片。测试结果表明,输出的方波信号幅度为11.96 V/11.95 V,死区时间为60 ns/80 ns,静态功耗低至478μA。     

基于滤波器综合分析法的118 GHz单刀二掷开关

采用滤波器综合分析方法, 基于分立式AlGaAs/GaAs异质结PIN二极管, 根据其等效寄生参数, 综合出单刀二掷开关集总参数滤波器模型, 以此分析其等效分布参数电路, 设计出了118 GHz星载辐射计用单刀二掷开关准单片, 开关电路尺寸6×2.5×0.1 mm3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究, 研制出了低插损的118 GHz开关模块, 在110~120 GHz, 测得开关插损小于3.0 dB, 插损典型值2.6 dB;开关隔离度大于22 dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18 ns、20 ns、10 ns、18 ns, 该准单片作为通道切换开关可集成应用于118 GHz收发组件中.     

MOS功率晶体管特性的温度效应

已设计的实验能够在同一仪器上方便地测量MOS功率管的脉冲I-V输出特性、直流I-V输出特性和器件内部的温度。对实验结果进行的综合分析表明,阈值电压随温度的增加而减小将引起MOS功率管的热不稳定,而表面迁移率随温度的增高而下降使MOS功率管的直流I-V特性在大电流区域呈观负阻。本文提出了反映热特性的两个特征点,给出了这两点处的栅源电压与器件设计参数的关系,作为MOS功率管热特性设计的依据。     

MOS/双极型复合功率管的应用

MOS/双极型复合功率管的出现,使双极型功率晶体管的高输入阻抗成为现实.MOS/双极型复合功率管利用MOS器件与双极型器件的各自特点,采用MOS与双极型器件以达林顿形式组合成复合功率管,具有高输入阻抗,低输入驱动,高跨导,低导通阻抗,大电流特性好等优点.《PMOS/     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks