QFN封装元件组装工艺技术的研究

QFN(Quad Flat No-lead Package,方形扁平无引脚封装)是一种焊盘尺寸小、体积小、 以塑料作为密封材料的新兴表面贴装芯片封装技术。由于底部中央大暴露焊盘被焊接到PCB的散热焊 盘上,这使得QFN具有极佳的电和热性能。QFN封装尺寸较小,有许多专门的焊接注意事项。文章 介绍了QFN的特点、分类、工艺要点和返修。     

QFN封装元件组装工艺技术研究

QFN（Quad Flat No-leaad Package，方形扁平无引脚封装）是一种焊盘尺寸小、体积小、以塑料作为密封材料的新兴的表面贴装芯片封装技术。由于底部中央有暴露的焊盘，该焊盘将被焊接到PCB的散热焊盘上，这使得QFN具有极佳的电热性能。因为QFN封装尺寸较小，所以有许多专门的焊接注意事项，这里中介绍了QFN的特点、分类、工艺要点和返修方法。     

QFN封装元件组装工艺技术的研究

QFN(Quad Flat No-lead Package,方形扁平无引线封装)是一种焊盘尺寸小、体积小、以塑料作为密封材料的新兴的表面贴装芯片封装技术。由于底部中央的大暴露焊盘被焊接到PCB的散热焊盘上,使得QFN具有极佳的电和热性能。QFN封装尺寸较小,有许多专门的焊接注意事项。本文介绍了QFN的特点、分类、工艺要点和返修。     

QFN元件焊接揍地失效研究

随着电子产品的多功能小体积发展趋势,电子元件、材料也随之变革,芯片的封装技术也得到了历史性的发展。传统的SOIC＆TSOP封装也在向着QFN（Quad FlatNo—lead Package,方形扁平无引脚封装）迈进,QFN技术由于底部中央有大暴露焊盘被焊接到PCB的散热焊盘上,使得QFN具有极佳的电和热性能;无引脚焊盘设计可以使其占有更小的PCB面积;非常低的阻抗、自感可满足高速或者微波的应用。基于以上QFN的封装特点,其可制造性及可靠性的要求也越来越高,特别是QFN元件在用于PWM控制线路时,因其焊盘设计的独特性,焊接的难点主要出现在Vin、SW、PGnd相互短路的问题上。为了提高其可制造良率,结合QFN的封装结构特点,本文根据其组装后接地失效的案例,进行分析,以寻找解决方法,从而提升整机的焊接良率及OATL。     

QFN封装元件组装及质量控制工艺

QFN封装由于具有良好的电和热性能、体积小、质量轻,在电子产品中被越来越广泛的推广和应用,针对QFN封装元件PCB焊盘设计、焊膏印刷网板开孔设计、贴装工艺、焊接工艺及返修工艺进行了阐述。     

双排焊端QFN器件焊接工艺的改进研究

单排焊端的QFN焊接工艺趋于成熟,而双排及多排QFN器件给组装过程带来了很大挑战。生产中主要难点在于此类器件与其他较大型器件混装,对焊膏量、共面性的要求比较苛刻。通过分析焊膏印刷原理,同时在比对芯片焊端与PCB焊盘尺寸的基础上,采用调整模板开孔的方式来改善焊膏印刷,使焊接效果达到品质要求。介绍了PCB焊盘阻焊开孔及表面处理工艺、丝印参数在组装过程中的影响以及多排QFN返修工艺。     

QFN器件焊接缺陷分析与工艺优化

QFN器件具有良好的电气性能,但器件回流焊接过程中极易产生底部热沉焊盘焊接空洞、器件引脚间锡珠、桥连等缺陷,当一个印制板焊接多个QFN器件时,缺陷发生率颇高。在高可靠性要求的航天产品焊接过程中,器件返修次数有限制,且返修会造成器件性能下降、组件可靠性降低等问题,因此亟需对QFN器件一次装配良率和焊接效果进行提升优化。为此,从原理上分析QFN器件热沉焊盘焊接空洞、器件引脚间锡珠缺陷产生机理,并从产品焊盘工艺性设计、钢网模板设计、焊接温度曲线设计等方面开展分析与优化。优化后,QFN器件一次装配良率提高,没有产生锡珠、虚焊等缺陷。     

QFN封装元件的板级组装和可靠性研究

近两年来，QFN封装(Quad flat No—lead方形扁平无引脚封装)由于其良好的电和热性能，得到了快速的推广和应用。采用微型引线框架的QFN封装称为MLF封装(Micro Lead Frame——微引线框架)。全球最大微电子制造商之一的Amkor公司，已经销售MLF封装的IC超过1亿只。因此人们迫切希望了解有关QFN的焊盘设计、装配工艺以及板级可靠性设计和工艺等方面的技术问题。由于QFN封装没有焊球，元件与PCB的电气连接是通过印刷焊膏到PCB上，然后贴片和进行回流焊完成的。为了形成可靠的焊点，需要特别注意焊盘的设计，同样．由于这种元件底部有大面积焊盘，其表面贴装工艺很复杂，要求进行合适的模板设计、焊膏印刷，以及回流焊曲线设置。本文对上述各方面要求和影响进行探讨，对PCB焊盘设计、表面组装工艺以及板级组装的可靠性作了详细地介绍。     

微波QFN芯片的SMT技术研究

QFN封装的微波芯片采用一种较新的封装形式,这种封装体积很小,特别适合高密度印刷电路板组装.着重介绍微波QFN芯片的表面组装技术,从QFN的封装形式、PCB的焊盘设计、组装工艺、QFN焊点检测及QFN器件的返修等方面加以详细论述,并对针QFN芯片总结出一套完整的组装技术.     

QFN封装的PCB焊盘和网板设计

近几年来,由于QFN封装（Quad Flat No-lead package,方形扁平无引脚封装）具有良好的电和热性能、体积小、重量轻,其应用正在快速增长.采用微型引线框架的QFN封装称为MLF（Micro Lead Frame,微引线框架）封装.QFN封装和CSP（Chip Size Package,芯片尺寸封装）有些相似,但元件底部没有焊球,与PCB的电气和机械连接是通过PCB焊盘上印刷焊膏经过回流焊形成的焊点来实现的.QFN封装对工艺提出了新的要求,本文将对PCB焊盘和印刷网板设计进行探讨.     

Comprehensive board-level solder joint reliability modeling and testing of QFN and PowerQFN packages

For quad flat non-lead (QFN) packages, board-level solder joint reliability during thermal cycling test is a critical issue. In this paper, a parametric 3D FEA sliced model is established for QFN on board with considerations of detailed pad design, realistic shape of solder joint and solder fillet, and non-linear material properties. It has the capability to predict the fatigue life of solder joint during thermal cycling test within ±34% error. The fatigue model applied is based on a modified Darveaux’s approach with non-linear viscoplastic analysis of solder joints. A solder joint damage model is used to establish a connection between the strain energy density (SED) per cycle obtained from the FEA model and the actual characteristic life during thermal cycling test. For the test vehicles studied, the maximum SED is observed mostly at the top corner of peripheral solder joint. The modeling predicted fatigue life is first correlated to thermal cycling test results using modified correlation constants, curve-fitted from in-house QFN thermal cycling test data. Subsequently, design analysis is performed to study the effects of 17 key package dimensions, material properties, and thermal cycling test condition. Generally, smaller package size, smaller die size, bigger pad size, thinner PCB, higher mold compound CTE, higher solder standoff, and extra soldering at the center pad help to enhance the fatigue life. Comparisons are made with thermal cycling test results to confirm the relative trends of certain effects. Another enhanced QFN design with better solder joint reliability, PowerQFN, is also studied and compared with QFN of the same package size.     

QFN焊盘设计及工艺组装

随着电子产品向更轻、更薄、更小、高密度化和高可靠性的发展,QFN（方形扁平无引脚）封装由于具有良好的电和热性能、体积小、质量轻,在电子产品中被越来越广泛的推广和应用。文章对QFN器件的焊盘设计,网板设计及组装工艺作了详细的介绍。     

方形扁平无引线QFN封装的研究及展望

方形扁平无引线(QFN)封装是方形扁平封装(QFP)和球栅阵列(BGA)封装相结合发展起来的先进封装形式,是SMT技术中产品体积进一步小型化的换代产品.讨论了QFN技术的改进及工艺自动化发展进程,指出其必将成为半导体器件高端主流封装形式之一.     

High density packaging technology ultra thin package & new tab package

As electronic devices become more highly integrated, the demand for small, high pin count packages has been increasing. We have developed two new types of IC packages in response to this demand. One is an ultra thin small outline package (TSOP) which has been reduced in size from the standard SOP and the other, which uses Tape Automated Bonding (TAB) technology, is a super thin, high pin count TAB in cap (T.I.C.) package. In this paper, we present these packages and their features along with the technologies used to improve package reliability and TAB. Thin packages are vulnerable to high humidity exposure, especially after heat shock.1 The following items were therefore investigated in order to improve humidity resistance: (1) The molding compound thermal stress, (2) Water absorption into the molding compound and its effect on package cracking during solder dipping, (3) Chip attach pad area and its affect on package cracking, (4) Adhesion between molding resin and chip attach pad and its affect on humidity resistance. With the improvements made as a result of these investigations, the reliability of the new thin packages is similar to that of the standard thicker plastic packages.     

Thermal cycling reliability of SnAgCu and SnPb solder joints: A comparison for several IC-packages

This paper deals with a comparison study between SnPb and SnAgCu solder joint reliability. The comparison is based on non-linear finite element modelling. Three packages have been selected: silicon CSP, underfilled flip chip and QFN package. Also the effect of thermal cycling conditions has been investigated. Comparing the induced inelastic strains in the solder joint, the lead-free SnAgCu generally scores better thanks to the lower creep strain rate. On the other hand for the CSP and flip chip package, SnAgCu scores worse for the more extreme loading conditions when the inelastic dissipated energy density is selected as damage parameter. The main reason is that due to the lower creep strain rate, the stresses become higher for SnAgCu resulting in higher hysteresis loops with more dissipated energy per cycle. For the QFN package, SnAgCu scores much better.     

基于蒙特卡罗法的QFN器件可靠性灵敏度分析

采用有限元软件,在热循环加载条件下,对四角扁平无引脚封装(QFN,Quad Flat No-lead Package)器件进行了热疲劳可靠性分析。选取PCB焊盘长度等几个因素作为灵敏度分析的输入变量,热疲劳寿命作为输出变量。结果表明:影响QFN器件热疲劳寿命的主要因素依次是焊盘长度、焊盘宽度和焊盘弹性模量等,其灵敏度值分别为:–6.4848×10–1,6.0606×10–1和6.0000×10–1等。提出了提高QFN器件可靠性的方法。     

多目标优化方法在叠层QFN封装结构优化中的应用

文章采用响应曲面法试验设计与有限元仿真相结合的方法对叠层QFN封装器件在热循环条件下进行仿真分析,通过优化结构参数来降低叠层QFN封装在热循环条件下的Von Mises应力和封装翘曲。使用多目标优化设计方法中的统一目标法来综合考虑Von Mises应力和封装翘曲。应用遗传算法对评价函数在约束条件下进行搜索最优解,得出叠层QFN封装结构优化的方案,以提高封装的可靠性。     

Junction temperature of QFN32 and 64 electronic devices subjected to free convection. Effects of the resin's thermal conductivity

The thermal state of the electronic devices used in many engineering fields must be controlled. The maximum temperature does not exceed the value recommended by the manufacturer to prevent a decrease of their reliability, malfunction or decommissioning. The junction temperature of the Quad Flat Non-Lead (QFN) device which often equips the electronic assemblies is affected by the thermal characteristics of its components, in particular the thermal conductivity of the molding compound (resin) used for the package encapsulation. This work deals with the QFN32 and QFN64 models widely used in the field of smart building. These devices may be tilted of any angle from the horizontal and vertical positions, depending on where they are located in the considered building. The packages located in small boxes are subjected to air natural convection. The 3D numerical approach based on the volume control method considers several configurations obtained by varying the generated power between 0.01 and 0.1 W by steps of 0.01 W, corresponding to the partial operation. The junction thermal state is determined for many values of the resin's thermal conductivity ranging between − 80% and + 100% of its average value and inclination of the devices varying between 0 and 90° (horizontal and vertical positions respectively) by steps of 15°. The results of the numerical solution are confirmed by thermal and electrical measurements carried out in situ on various prototypes. The deviation between measurements and calculations is low, ranging between − 3 and + 7%. New and accurate relationships are proposed, allowing to improve the thermal design of the QFN32 and QFN64 packages by determining their junction temperature for any combination of the considered generated power, tilt angle and thermal conductivity of the encapsulating resin. The control of the thermal aspect allows to enhance substantially the reliability of these widely used electronic devices.