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1.
一种高速高精度采样/保持电路   总被引:1,自引:0,他引:1  
杨斌  殷秀梅  杨华中 《半导体学报》2007,28(10):1642-1646
介绍了一种用于12bit,100MS/s流水线模数转换器前端的采样/保持电路的设计.该电路在3V电源电压100MHz采样频率时,输入直到奈奎斯特频率仍能够达到108dB的无杂散动态范围(SFDR)和77dB的信躁比(SNR).论文建立了考虑开关之后的采样保持电路的分析模型,并详细研究了电路中开关组合对电路性能的影响,同时发现了传统的栅源自举开关(bootstrapped switch)中存在的漏电现象并对其进行了改进,极大地减小了漏电并提高了电路的线性性能.  相似文献   

2.
杨斌  殷秀梅  杨华中 《半导体学报》2007,28(10):1642-1646
介绍了一种用于12bit,100MS/s流水线模数转换器前端的采样/保持电路的设计.该电路在3V电源电压100MHz采样频率时,输入直到奈奎斯特频率仍能够达到108dB的无杂散动态范围(SFDR)和77dB的信躁比(SNR).论文建立了考虑开关之后的采样保持电路的分析模型,并详细研究了电路中开关组合对电路性能的影响,同时发现了传统的栅源自举开关(bootstrapped switch)中存在的漏电现象并对其进行了改进,极大地减小了漏电并提高了电路的线性性能.  相似文献   

3.
《电子与封装》2015,(9):29-32
设计了一种应用于8位100 MHz采样频率流水线ADC的采样保持电路。采用电容翻转的主体结构及下级板采样技术,设计了使用共源共栅密勒补偿的两级运放。在不影响性能的前提下提出对传统栅压自举采样开关的改进方案,减小了栅压自举开关的面积。该采样保持电路采用CSMC0.18μm CMOS工艺,1.8 V电源电压进行设计。Spectre仿真并使用Matlab分析输出动态特性表明,电路达到了74.7 d B的无杂散动态范围(SFDR),信纳比(SINAD)为60.8 d B。  相似文献   

4.
设计了一个用于流水线模数转换器(pipelined ADC)前端的采样保持电路.该电路采用电容翻转型结构,并设计了一个增益达到100dB,单位增益带宽为1 GHz的全差分增益自举跨导运算放大器(OTA).利用TSMC 0.25μm CMOS工艺,在2.5 V的电源电压下,它可以在4 ns内稳定在最终值的0.05%内.通过仿真优化,该采样保持电路可用于10位,100MS/s的流水线ADC中.  相似文献   

5.
周佳宁  李荣宽 《电子与封装》2011,11(11):18-21,32
介绍了一种应用于12位、10MS/s流水线模数转换器前端的高性能采样保持(SH)电路的设计。该电路采用全差分电容翻转型结构及下极板采样技术,有效地减少噪声、功耗及电荷注入误差。采用一种改进的栅源电压恒定的自举开关,极大地减小电路的非线性失真。运算放大器为增益增强型折叠式共源共栅结构,能得到较高的带宽和直流增益。该采样保...  相似文献   

6.
一种高性能CMOS采样/保持电路   总被引:1,自引:0,他引:1  
罗阳  杨华中 《微电子学》2005,35(6):658-661
介绍了一种高性能CMOS采样/保持电路.该电路在3 V电源电压下,60 MHz采样频率时,输入直到奈奎斯特频率仍能够达到90 dB的最大信号谐波比(SFDR)和80 dB的信噪比(SNR).电路采用全差分结构、底板采样、开关栅电压自举(bootstrap)和高性能的增益自举运算放大器.采用0.18 μm CMOS工艺库,对电路进行了Hspice仿真验证.结果表明,整个电路消耗静态电流5.8 mA.  相似文献   

7.
陈俊龙  黄继伟  胡炜  吴嘉士  张荣晶  张千文 《微电子学》2015,45(5):564-567, 572
设计了一种应用于流水线型模数转换器的14位100 MHz采样保持电路,并在电路设计中,提出了一种改进型的栅压自举采样开关电路。在不增加电路复杂性的情况下,栅压自举采样开关电路可以有效地增加采样开关管的开启时间和关断时间,以及电路的可靠性。采样保持电路采用电容翻转式结构,以及采用增益提高的全差分折叠式共源共栅跨导放大器来实现。采用SMIC 1.8 V/3.3 V 0.18 μm 1P6M CMOS工艺对电路进行设计与仿真。仿真结果显示,在10.009765 MHz输入信号,100 MHz工作频率下,输出信号的无杂散动态范围(SFDR)为95.9 dB,与传统自举开关相比,提高了16.3 dB。  相似文献   

8.
设计了一种高性能采样/保持(S/H)电路,采用全差分电容翻转型的主体结构,有效减小了噪声和功耗.在电路设计中,采用栅压自举开关,极大地减小了非线性失真,同时,有效地抑制了输入信号的直流偏移.采样/保持放大器电路采用折叠共源共栅结构,由于深亚微米工艺中器件本征增益减小,S/H电路为达到更高增益,采用增益提升技术.设计的采样/保持电路采用0.18μm1P5M工艺实现,在1.8V电源电压、125 MHz采样速率下,输出差动摆幅达到2 V(VP-P),输入信号到奈奎斯特频率时仍能达到98 dB以上的无杂散动态范围(SFDR),其性能满足14位精度、125MHz转换速率的流水线ADC要求.  相似文献   

9.
一种用于流水线ADC采样保持电路的设计   总被引:1,自引:0,他引:1  
李锋  黄世震  林伟 《电子器件》2010,33(2):170-173
介绍一种用于流水线ADC的采样保持电路。该电路选取电容翻转式电路结构,不仅提高整体的转换速度,而且减少因电容匹配引起的失真误差;同时使用栅压自举采样开关,有效地减少了时钟馈通和电荷注入效应;采用全差分运算放大器能有效的抑制噪声并提高整体的线性度。该采样保持电路的设计是在0.5μm CMOS工艺下实现,电源电压为5 V,采样频率为10 MHz,输入信号频率为1 MHz时,输出信号无杂散动态范围(SFDR)为73.4 dB,功耗约为20 mW。  相似文献   

10.
基于SMIC0.18μm,1.8V工艺,设计了一种新型的双采样保持电路,可用于12bit、100MHz采样频率的时间交织流水线(Pipelined)ADC中.设计了一种采用了增益增强技术并带有一种改进的开关电容共模反馈电路的全差分运放.并且针对该双采样保持电路设计了特定的时钟发生电路.在cadence电路设计平台中利用Spectre仿真,结果表明:该采样保持电路可以实现12位、100MS/s采样速率和15mW功耗,满足系统设计要求.  相似文献   

11.
12.
A precision sample and hold integrated circuit with autozeroing of all DC errors is described. Experimental data have shown that it provides the accuracy necessary for use in 12 bit data acquisition systems. Application of noise-optimized silicon gate FET devices for the input circuitry of amplifiers which buffer the hold capacitor results in a low droop rate and allows the sample/hold to operate without external components. Common mode rejection is optimized through implementation of a modified current source offering extremely high output impedance at high operating currents. The device includes all digital control and switching circuitry.  相似文献   

13.
A novel bridge-type optoelectronic (OE) sample-and-hold circuit based on current steering is proposed and experimentally tested. Experimental comparison between this circuit and the conventional direct OE sample-and-hold circuit shows that the bridge type is clearly superior in performance to the direct OE circuit. When a high speed signal is sampled with high accuracy, the bridge-type OE sample-and-hold is potentially more advantageous over the conventional electronic sample and hold in terms of large charging current capability, commanding signal isolation, fabrication simplicity, accurate timing control, and less time jitter  相似文献   

14.
An on-chip charge-sensing circuit with a feedback loop has been designed for improving the charge-transfer speed in photodiode arrays. Its large output voltage swing combined with improved speed performances, makes this circuit well-suited for OCR applications, especially low-cost data capture devices. Sample and hold operation can easily be performed without increasing the Si real estate, making parallel output feasible with frame rates of 3 kHz for arrays with 500 pixels. Experimental arrays were built in standard p-channel aluminum-gate technology.  相似文献   

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17.
A GaAs BiFET sample and hold circuit has been implemented and evaluated. SINAD (signal to noise and distortion) was measured to be ~60 dB, but was limited by the test setup. The device accepts a differential input and produces a differential output. The S/H is clocked differentially at rates of up to 200 MHz. 12 bit performance was expected from SPICE simulations. Despite our test setup limitations, 10 bit performance was observed at 200 MSPS with an input signal frequency of 198 MHz  相似文献   

18.
A new closed loop Sample-and-Hold (S&H) architecture is proposed for pipeline analog-to-digital converter (ADC) that breaks the precision-speed-power trade off by means of canceling out the first closed loop pole. This pole-canceling results in widening the bandwidth of the S&H up to the second pole. In this architecture, two amplifiers are used: one for accuracy with little power consumption, another one for high-speed response, which consumes most of the total power. Exploiting these two amplifiers remedies some of the tradeoffs and limitations of opamp design in S&H circuits. Simulated by HSPICE with a standard BSIM3v3 0.13 μm technology, the S&H achieves 80 dB SFDR for a 1.6 Vppd output at 500 MHz sampling rate.  相似文献   

19.
A high-speed GaAs IC for detection of line code vibrations is described. This 144-gate error-detection circuit for monitoring a high-bit-rate fiber-optic link has been designed and fabricated using a high-yield titanium tungsten nitride self-aligned gate MESFET process. This process routinely provides a wafer-averaged gate delay (fan-in=fan-out=2) of less than 70 ps with a power dissipation of 0.5 mW/gate. The error-detection circuits were tested on-wafer using high-frequency probe cards at a clock rate of 1.4 GHz, with a yield of 64%. Packaged circuits worked at a clock frequency of over 2.5 GHz and consumed 200-mW power at a fixed power supply voltage of 1.5 V. The circuits operate over a wide variation in power supply voltage and temperature. When operated at a package temperature of 125°C, the circuits show less than a 12% degradation in their maximum clock frequency. The circuit was inserted into a 565-Mb/s system currently using a silicon ECL part, and full functionality was verified with no necessary modifications  相似文献   

20.
This paper presents the design, fabrication and tested results of an analogue-to-digital converter (ADC) using linear relationship ratio of comparator and resolution. An original N-bit flash architecture uses 2N?1 comparators (N = resolution), while the proposed architecture uses only N comparators for N-bit making it a linear relationship design. This paper also deals with the design of sample and hold circuit that utilises clock bootstrapping technique which allows sampling at peak voltages and helps in minimising charge injection errors, attaining 125 µV for the proposed design. The proof of concept of 4-bit prototype ADC using 1P?2M is fabricated using AMIS 500 nm CMOS C5X technology and the experimental results at a sampling rate of 800 MS/s reveal an effective no. of bit of 3.34 bits, signal-to-noise ratio of 24.44 dB and differential non-linearity and integral non-linearity of 0.42 and 0.40, respectively. The converter consumes 7 mW power when operated on 2.5 V supply and occupies 0.014 mm2 chip area.  相似文献   

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