Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds

Semiconductors - In this work the results of studying the electrical transport properties of Fe2V1 –xNbxAl1 –yGay (0.1 ≤ x ≤ 0.2 and 0.1 ≤ y ≤ 0.2) are...     

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

Semiconductors - The  results  of  investigating  the  thermoelectric  properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x...     

Synthesis and Thermoelectric Properties of an Sn1 – xPbxSb4Te8 Solid Solution Doped with Bismuth

Semiconductors - The thermoelectric properties of a solid solution of Sn1 – xPbxSb4Te8 and Sn1 – xPbxSb4 – yBiyTe8...     

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation

Semiconductors - At the beginning of high-power optical picosecond pumping of the GaAs layer of the AlxGa1 – xAs–GaAs–AlxGa1 – xAs...     

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

Semiconductors - During high-power optical picosecond pumping of the GaAs layer of an AlxGa1 – xAs–GaAs–AlxGa1 – xAs heterostructure, stimulated...     

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride

Semiconductors - The  spectral  dependences  of  the absorption coefficient α in the submicron samples of the n-Bi2Te3 + CdBr2 topological insulator, which...     

Design of Compact Hybrid Branch Line Coupler (BLC) for GSM Application

Wireless Personal Communications - This paper presents a compact design of a hybrid branch line coupler (BLC) operating at 1.8 GHz frequency for the global system for...     

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors - The structural properties and crystal quality of AlxGa1 ? xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon...     

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Semiconductors - We present the results of photoluminescence measurements of AlxGa1 – xAs nanowires, together with the transmission electron microscopy structural analysis....     

An Optimal Information Hiding Approach Based on Pixel Value Differencing and Modulus Function

Wireless Personal Communications - This paper introduces the use of rhombus shaped dipole nanoantenna coupled to geometric diode in energy harvesting at 19.4 THz. An...     

Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature

Semiconductors - Depending on the choice of the technology for producing CuInxGa1 – xSe2 films, a spread in the electrophysical and photoelectric parameters of...     

Design of a novel microstrip four-channel diplexer for multi-channel telecommunication systems

Telecommunication Systems - This paper presents a novel microstrip quad-channel diplexer. The introduced diplexer operates at close resonance frequencies of 1.68 GHz, 1.9 GHz,...     

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors - The  possibility  of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of...     

Design of Simulation System for LTE-U Using 5 GHz Band in MATLAB

Wireless Personal Communications - Unused spectrum is being a limited commodity for the telecom industry. However, up to 500 MHz of unlicensed spectrum in 5 GHz band is in use for...     

Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition

Semiconductors - Radiation thermopiles are structural units of sensors used for measuring the energetic parameters of  radiation  in  the wavelength range from 0.1 to 100...     

Research on Static Analysis of Box Foundation for Wind Turbine on SESAM Software

Wireless Personal Communications - The overall finite element model of box floating foundation of a generic 1.5 MW wind turbine which is located in the 35 m depth of Bohai sea is...     

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Semiconductors - The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of...     

Non-iterative Coordinated Beamforming for Multicell MIMO Heterogeneous Networks

Wireless Personal Communications - This paper presents ultra-wideband channel characteristics in the presence of float glass slab as obstacle of varied thickness (4 mm, 8 mm,...     

Absorption of Pulsed Terahertz and Optical Radiation in Earthworm Tissue and Its Heating Effect

Journal of Infrared, Millimeter, and Terahertz Waves - The transmission of THz, near-infrared (1030 nm), and green (515 nm) pulses through Eisenia andrei body wall is studied,...     

Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential

Semiconductors - The low-temperature (T = 2 K) optical spectra (transmission, reflection and luminescence) of a compositionally graded CdS1 – xSex/CdS heterostructure with a...