Synthesis and Thermoelectric Properties of an Sn1 – xPbxSb4Te8 Solid Solution Doped with Bismuth

Semiconductors - The thermoelectric properties of a solid solution of Sn1 – xPbxSb4Te8 and Sn1 – xPbxSb4 – yBiyTe8...     

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

Semiconductors - The  results  of  investigating  the  thermoelectric  properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x...     

Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals

Semiconductors - The thermoelectric properties of Sb2 – xCuxTe3 single crystals (0 ≤ x ≤ 0.10) synthesized by the Bridgman method are studied in the temperature...     

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation

Semiconductors - At the beginning of high-power optical picosecond pumping of the GaAs layer of the AlxGa1 – xAs–GaAs–AlxGa1 – xAs...     

Performance comparison of M-QAM and DQPSK modulation schemes in a 2 × 20 Gbit/s–40 GHz hybrid MDM–OFDM-based radio over FSO transmission system

Photonic Network Communications - This work is focused on the modeling and performance investigation of a 2?×?20 Gbit/s–40 GHz hybrid mode division...     

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors - The structural properties and crystal quality of AlxGa1 ? xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon...     

Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature

Semiconductors - Depending on the choice of the technology for producing CuInxGa1 – xSe2 films, a spread in the electrophysical and photoelectric parameters of...     

Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix

Semiconductors - The results of investigating charge-transfer processes in thin layers of a vitreous system (As2Se3)100 – xBix are presented. A power-law dependence of the...     

Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential

Semiconductors - The low-temperature (T = 2 K) optical spectra (transmission, reflection and luminescence) of a compositionally graded CdS1 – xSex/CdS heterostructure with a...     

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

Semiconductors - During high-power optical picosecond pumping of the GaAs layer of an AlxGa1 – xAs–GaAs–AlxGa1 – xAs heterostructure, stimulated...     

An Optimal Information Hiding Approach Based on Pixel Value Differencing and Modulus Function

Wireless Personal Communications - This paper introduces the use of rhombus shaped dipole nanoantenna coupled to geometric diode in energy harvesting at 19.4 THz. An...     

Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition

Semiconductors - Radiation thermopiles are structural units of sensors used for measuring the energetic parameters of  radiation  in  the wavelength range from 0.1 to 100...     

Design of Compact Hybrid Branch Line Coupler (BLC) for GSM Application

Wireless Personal Communications - This paper presents a compact design of a hybrid branch line coupler (BLC) operating at 1.8 GHz frequency for the global system for...     

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Semiconductors - The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of...     

Non-iterative Coordinated Beamforming for Multicell MIMO Heterogeneous Networks

Wireless Personal Communications - This paper presents ultra-wideband channel characteristics in the presence of float glass slab as obstacle of varied thickness (4 mm, 8 mm,...     

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Semiconductors - We present the results of photoluminescence measurements of AlxGa1 – xAs nanowires, together with the transmission electron microscopy structural analysis....     

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors - The  possibility  of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of...     

Design of a novel microstrip four-channel diplexer for multi-channel telecommunication systems

Telecommunication Systems - This paper presents a novel microstrip quad-channel diplexer. The introduced diplexer operates at close resonance frequencies of 1.68 GHz, 1.9 GHz,...     

Design of Simulation System for LTE-U Using 5 GHz Band in MATLAB

Wireless Personal Communications - Unused spectrum is being a limited commodity for the telecom industry. However, up to 500 MHz of unlicensed spectrum in 5 GHz band is in use for...     

Low-voltage and low-power Ku-band CMOS LNA using capacitive feedback

Analog Integrated Circuits and Signal Processing - An ultra-wideband (12–18 GHz) low-noise amplifier (LNA) using a 65 nm CMOS technology is proposed, in which a...