硅基光子晶体热释电红外传感器衬底的研制

在借助光刻等微电子工艺手段的基础上,通过控制交替变换的阳极氧化电流成功地制备出了阵列化的多孔硅一维光子晶体,然后在其表面沉积了一层500 nm Si3N4用于改善其表面粗糙度,使该结构更好地应用于热释电红外传感器之中。通过傅里叶红外反射谱(FTIR)测试证明该样品有较好的光学反射性能,探索了将这种阵列化的多孔硅一维光子晶体应用于制备高性能红外热释电传感器衬底的可行性。     

超薄Si3N4/SiO2(N/O) stack栅介质及器件

成功制备了EOT(equivalent oxide thickness)为2.1nm的Si3N4/SiO2(N/O) stack栅介质,并对其性质进行了研究.结果表明,同样EOT的Si3N4/SiO2 stack栅介质和纯SiO2栅介质比较,前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者.在此基础上,采用Si3N4/SiO2 stack栅介质制备出性能优良的栅长为0.12μm的CMOS器件,器件很好地抑制了短沟道效应.在Vds=Vgs=±1.5V下,nMOSFET和pMOSFET对应的饱和电流Ion分别为584.3μA/μm和-281.3μA/μm,对应Ioff分别是8.3nA/μm和-1.3nA/μm.     

PtSi单片式红外CCD

本文讨论单片式 PtSi—Si(p)SB IRCCD 的工作机理、芯片结构、制备工艺及其性能改善,该器件适用于3～5μm 红外光谱区的热成像。本文还讨论了带新型光学共振腔结构的 PtSi 肖特基势垒光探测器阵列的制作与特性,最后介绍了该两维红外焦平面阵列(FPA)的应用及发展动向。     

单直波导光学环腔器件的Q值研究

为实现高品质因数Q值的光学环腔器件,采用耦合模理论,仿真得出单直波导光学环腔器件的Q值与自耦合系数的关系曲线.以Si3N4为材料,采用与CMOS工艺相兼容的技术制备了波导宽度为2μm,半径为200μm的Si3N4单直波导光学环腔器件.在相同的制备工艺下,同一芯片中不同光学环腔的传输系数相同,通过设计器件中环腔与直波导的...     

顶部平坦化32通道AWG的设计与研制

根据优化输入端多模干涉器(MMI)结构设计,研制出32通道50 GHz通道间隔、顶部平坦化的阵列波导光栅(AWG)器件。该器件的采用6μm×6μm折射率差为0.75%的Si基SiO2埋型波导结构,阵列波导数为130,罗兰圆半径为9 419.72μm,相邻阵列波导长度差为128.42μm。测试结果表明:AWG器件插入损耗(IS)为-5~-8.5 dB,串扰>-25 dB,3 dB带宽>0.25 nm。     

光伏HgCdTe混合器件的性能

第二代红外成象系统需要供凝视应用的高密度焦平面阵列。为了满足这种要求,已研制采用HgCaTe光电二极管作探测器和Si电荷耦合器件(CCD)作信号处理器的焦平面结构。虽然一般的离子注入混合阵列已成功地与CCD多路传输器互连,但在液相外延层上制备的混合阵列却具有性能、处理能力和成品率方面的一些固有优点。用富Hg-熔体液相外延技术制备的异质结结构二极管得出了较之一般离子注入器件为优越的性能。器件具有高R_0A乘积和良好的组分均匀性。给出了为8～12μm和3～5μm应用所制器件的数据。     

硅基光子材料和器件的进展

评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55μm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2～3dB,这些器件的上升和下降时间分别为2.1和2.3μs.     

硅基光子材料和器件的进展

评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55μm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2～3dB,这些器件的上升和下降时间分别为2.1和2.3μs.     

近红外Si_(0.8)Ge_(0.2)/Si横向pin探测器的模拟与测试

设计了一种新型叉指状近红外 Si0 .8Ge0 .2 / Si pin横向光电探测器。采用半导体器件模拟软件 Atlas分别对该器件平衡条件下物理特性及反向偏压下电场分布、光电特性进行了模拟 ;对实际制作的光电探测器进行了测试 ,结果表明 :其波长响应范围为 0 .4～ 1 .3μm,峰值响应波长在 0 .93μm,响应度达 0 .3 8A/ W,寄生电容小于 2 .0 p F。实验结果和模拟结果符合得很好。其良好的光电性能为应用于近红外光的高速、低工作电压硅基光电集成器件提供了可能     

磁控溅射法制备复合绝缘层的薄膜晶体管

研究了磁控溅射法制备的复合绝缘层结构的有机薄膜晶体管.该器件是以酞菁铜(CuPc)作为有源层,SiO2/Si3N4/SiO2复合绝缘层和单层SiO2为绝缘层来进行对比研究的.结果显示与单层SiO2绝缘层的器件相比,具有复合绝缘层的器件结构能有效改进有机薄膜晶体管的性能.同时发现,不同厚度的SiO2/Si3N4/SiO2复合绝缘层对晶体管的性能也有影响,绝缘层太厚,感应电流小;绝缘层太薄,器件容易被击穿.     

一维纳米硅光子晶体的制备与优化

采用双槽电化学腐蚀法制备了纳米多孔硅,主要研究了腐蚀时间和腐蚀电流对重掺杂p型(100)硅衬底上制备的多孔硅层有效光学厚度的影响,采用U-4100光谱仪、场发射扫描电子显微镜(FESEM)技术对所制备的多孔硅光子晶体的结构和有效光学厚度进行了分析表征。研究结果表明,通过合理地选择腐蚀时间和腐蚀电流,可以比较精确地制备特定有效光学厚度的多孔硅薄膜,此方法可广泛应用于纳米多孔硅光子晶体的制备中。     

Forming Antifouling Organic Multilayers on Porous Silicon Rugate Filters Towards In Vivo/Ex Vivo Biophotonic Devices

We describe the development and optimization of porous silicon photonic crystal surface chemistry towards implantable optical devices. Porous silicon rugate filters were prepared to obtain a narrow linewidth reflectivity peak in the near‐infrared (700–1000 nm) with low background reflectivity elsewhere. The morphology of the mesoporous structures (pore diameter < 50 nm) was such that only small proteins could infiltrate the pores whereas larger proteins were excluded. To provide stability in biological media, we established an approach to build organic multilayers containing hexa(ethylene oxide) moieties in porous silicon. The optical changes associated with organic derivatization were monitored concurrently with FTIR characterization. Furthermore, the antifouling capability of our chemical strategy is assessed and the penetration of different sized proteins into the structure was determined. The structural stability in biological environments was evaluated by incubation in human blood plasma over time while monitoring the optical signature of the photonic crystal.     

Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation

Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.     

新型共轭聚合物PDABTh／PS复合膜的光学三阶非线性研究

采用旋转涂布法在多孔硅（PS）中嵌入新型含偶氮苯与噻吩结构单元的共轭聚合物PDABTh,制备出聚合物PDABTh／PS复合膜。采用单光束反射z扫描方法分别对PS和pDABTh／PS复合膜在532nm处的非线性折射率进行TN量。实验结果表明,复合材料三阶非线性光学效应较PS得到了明显增强,为新型共轭聚合物PDABTh／P...     

Vapor Sensing Theoretical Study on Optical Microcavities

When the organic vapors absorbed to the surface of porous silicon（PS）, capillary condensation takes place due to the porous structure of the PS layer, accordingly resulting in the effective refractive index changing. For PS multi-layer microcavities, the different resonant peaks shift in the reflectivity spectrum of porous silicon microcavities（PSMs）. The optical sensing model is set up by applying Bruggeman effective medium approximation theory, capillary condensation process and transfer matrix theoretically analytical method of one-dimensional photonic crystals. At the same time, comprehensively researched on are the sensing characteristics of PSMs which are exposed to give concentration organic vapors. At last, made is the theoretical simulation for sensing model of the PSMs in case of saturation by using computer numerical calculation, and found is the linearity relation between the refractive index of organic solvent and the peak- shift. At the same time deduced is the peak-shift as a function of the concentration of ethanol vapors.     

一维多层介质光子晶体的禁带特征及其在滤波中的应用

利用光学传输矩阵法,研究了一维多层介质光子晶体的禁带特征.分析讨论了介质层排列、折射率及几何厚度等因素对光子晶体禁带的影响,进一步数值计算研究表明四层介质以上的光子晶体会因介质层排列顺序不同而产生不同的光子禁带,利用这一特点设计了一种新型的光子晶体滤波器,并研究了其窄带滤波特性.     

Origins of photoluminescence degradation in porous silicon under irradiation and the way of its elimination

Using of infrared (IR) and photoluminescence (PL) spectroscopy a comparative study of distinctions in composition and photoluminescence properties of porous silicon with different morphology was performed. Basing on the obtained experimental data and conventional theoretical models the main factors were found that have a negative effect on the intensity of PL in porous silicon and its degradation under the impact of directed irradiation in the visible range. With porous silicon as an example having the pores of 50–100 nm in size there was demonstrated a possibility for improving of these characteristics by its chemical treatment in polyacrylic acid.     

A compact dual-band bandpass filter based on porous silicon dual-microcavity of one-dimensional photonic crystal

We demonstrate a laser-diode(LD)pumped actively Q-switched laser with Nd:Sc0.2Y0.8Si O5(Nd:SYSO)crystal for the first time.A stable actively Q-switched laser is obtained at dual wavelengths of 1 075.2 nm and 1 078.2 nm.The maximum average output power of 720 m W is obtained at the repetition rate of 15 k Hz under the pump power of8.7 W.The minimum pulse width of 58 ns is obtained at the repetition rate of 5 k Hz under the pump power of 8.7 W,corresponding to the peak power of 1.9 k W and the pulse energy of 112μJ.     

Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface

Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.     

一种基于多孔硅光子器件的免标记生物检测法

本文提出了一种免标记、快速便捷、低成本、较 高灵敏度的生物检测的新方法, 其检测原理是通过测量多孔硅中因生物反应引起的折射率的变化来实现对生物分子的检测。 文中采用单层多孔硅样品作为传感器基底,将包虫病(EgP38)抗原链接到多孔硅中,再在 样品上滴加不同浓度的EgP38抗体分子,抗原与抗体发生特异性反应后,采用椭圆偏振仪检 测样品折射率的变化量,通过分析传感器中因发生生物反应而导致的折射率变化量,从而实 现生物检测。该方法首次采用椭圆偏振法实现了对包虫病生物分子的检测,对抗体分子的检 测限为142 nM。