一种基于热阻网络的叠层芯片结温预测模型

提出了一种基于热阻网络的叠层芯片结温预测模型,该模型根据芯片内各组件的尺寸和热导率计算出对应的热阻,同时考虑了接触热阻和热量耦合效应,从而得到每层芯片在不同功耗情况下的结温预测值。在一个三芯片堆叠结构中,使用提出的方法对芯片结温进行预测,并与ANSYS仿真软件结果作比较,发现结温预测值的相对误差均小于4.5%。因此,该模型仅需根据芯片结构和材料参数,便可快速精确地估算出芯片在不同工作环境下的结温值。     

基于NI DAQ的功率LED热特性测量分析系统

分析了功率发光二极管(LED)基于电学测量的热阻的测量方法,介绍了采用高性能数据采集卡构建了新型的功率LED热特性自动测量分析系统,实现对功率LED结温和热阻的精确、简便的测量.对几种典型功率LED样管的测试结果,与校正样品的标称值完全相符,并可对LED的瞬态热过程进行更深入分析.     

多芯片组件热阻技术研究

在传统单芯片封装热阻定义的基础上,针对多芯片组件(MCM)传统热阻表示方法的不足,基于线性叠加原理,采用有限元模拟技术,提出了MCM的结到壳的热阻表示方法——热阻矩阵,并利用有限元模拟方法对热阻矩阵进行了验证。结果表明,采用热阻矩阵方法预测器件结温的误差小于2%。     

IGBT junction and coolant temperature estimation by thermal model

The capability of IGBT (Insulated Gate Bipolar Transistor) to handle heat is one of its main limitations of high power application. This paper aims to study an IGBT thermal model under flow cooling condition and estimate the IGBT module junction and coolant temperature. Firstly, this paper studies the IGBT module internal sandwich structure and calculates the thermal resistance and thermal capacitor for each layer using a 1D physical model. Then a Cauer electric model is built for the IGBT module to evaluate the thermal constant time of the model. The liquid cooling method is applied in this project for fast cooling and the thermal parameters are studied and measured since this cooling method involves both solid and liquid. In order to estimate the junction temperature, the sensing temperature from NTC (Negative temperature coefficient) resistor inside the module is used as reference temperature. The equivalent thermal models, also named Foster model, from both junction to NTC and NTC to coolant are built, respectively. With these thermal models, the junction and coolant temperature estimation methods are derived. For the purpose of making the estimation accurate, the thermal coupling effect is carefully studied. Finally, the thermal model is verified by inverter application with current steps sweeping; the estimated temperature is compared with thermal camera measurement result which demonstrates good accuracy of the thermal model. The estimated coolant temperature is also well matched with thermocouple measurement result.     

LED导热胶片性能研究与评估

大功率LED器件的基座与散热基板之间的接触热阻会阻碍其芯片PN结与散热基板之间的热传导,从而影响到器件的光、色、电性能及寿命。导热胶片用于填充材料界面之间接合或接触时产生的微空隙及表面凹凸不平的孔洞,是减小接触热阻、降低芯片PN结温度的有效手段。文章主要通过测定热阻值来开展对导热胶片在实际应用中导热性能的研究。通过阻容...     

Delay components of a current mode logic circuit and their currentdependency

The delay of a CML circuit can be described in terms of the delay elements of a bipolar transistor such as junction capacitors C_BC , C_BE, C_CSand a cutoff frequency f_T . A new analysis method is proposed to calculate a CML delay. The nonlinear conductance of a bipolar transistor is approximated by a piecewise linear function. A resistor network is then picked up from the CML equivalent circuit to characterize the dc operation. This resistor network and the delay elements determine the CML delay. Subcircuits containing the resistor network and one or two of the delay elements of C_BC, C^BE, C_CS, and f_T are separately analyzed to clarify the delay components. The total CML delay is estimated from a linear sum of the delay components for a step input response. Current dependency of the CML delay Is also discussed     

A structure oriented compact thermal model for multiple heat source ASICs

This paper proposes a methodology for the extraction of a compact thermal model for multiple heat source devices, which can be used for estimation of the overall temperature field. This extraction is based on the physical parameters as well as on the layout and the packaging of the device. The model directly represents the regions surrounding a source by a resistance network containing the specific parameters of source and chip in analytical form, so that it is easy to vary parameters like power dissipation and thermal conductivity within a wide range. In order to obtain a good and fast approximation of the continuous case, the shape of the volume elements represented by a node in the network is chosen regarding the direction of the heat flow within these elements. Therefore these volume elements are not rectangular but pyramid- or parallelogram-like structures. The temperature fields of multiple sources add up for the total temperature distribution, by the use of a matrix field representation.     

Estimation of thermal parameters of the enclosed electronic package system by using dynamic thermal response

A methodology for modeling and simulating the electro-thermal behavior of an enclosed electronic package is presented and validated. The electro-thermal model is constructed using system dynamics. The system model, in which the electrical and the thermal domain are combined, is presented. The developed model describes the dynamic thermal behavior system that was an electronic device in the test enclosure. An effective way to identify the thermal parameters of the system, especially the thermal contact resistance, is suggested. In detail, the new method for thermal resistance identification is based on the temperature difference behavior between the component and the air temperature inside the enclosure. Based on the proposed model, either the variation of the heat source or the ambient temperature can be estimated. Simulated results were in good agreement with the measured temperature in the transient state accompanying with the variation of the environment.     

Thermal design of a broadband communication system with detailed modeling of TBGA packages

This paper presents a thermal modeling of a broadband network communication box partitioned into two stacked modules. A printed circuit board (PCB) is inside each module where an array of 16 tape ball grid array (TBGA) packages is surface mounted to the PCB. The TBGA package dissipates 6 W power each. In addition, 12 W of power is dissipated from four plastic ball grid array (PBGA) packages on the PCB. Pin-fin heat sinks are attached to the TBGA packages using silica-filled epoxy to enhance heat dissipation. Pin-fin heat sinks are also attached to the PBGA packages. Two exhaust fans are mounted at the flow exit to draw ambient air into the system at approximately 200 linear feet per minute (LFM) of velocity. The full Navier–Stokes equations for airflow are solved to simulate the forced convection cooling in the electronic module. Buoyancy effect was considered in the numerical model by incorporating Boussinesq-approximation. The TBGA packages are modeled in detail in order to obtain the package junction temperatures for system reliability evaluation and thermal design optimization. Detailed models of the attached pin-fin heat sinks and the epoxy interfaces are also utilized in this study. Compact heat sink model composed of a base plate and a resistance fluid volume is applied to model heat dissipation from the heat sinks attached to the four PBGA packages. System fan curve is used to simulate the fan operating conditions. The effect of changing system thermal design on the TBGA package junction temperatures as well as the hydraulic operating conditions of the system fans are examined and reported herein. The effect of radiation heat transfer is also examined. The importance of detailed modeling of the high power TBGA packages is demonstrated in this study. Simulation results were compared with JEDEC thermal test data under similar conditions of airflow.     

IGBT模块焊料老化状态监测方法及热网络模型优化

焊料老化是绝缘栅双极型晶体管(IGBT)模块内部传热能力退化和结温估计偏离的主要诱因。利用壳温与焊料老化程度间的对应规律构建了两者的量化关系,提出了焊料老化状态监测方法。采用与功率损耗无关的参数对恶化Cauer热网络(CTN)有效传热面积进行表征,提出了焊料裂纹诱导的结温低估补偿机制;考虑温度相关的异质材料导热系数及比热容参量,抑制了温升引起的材料传热特性退化影响。在此基础上,通过对传统CTN模型的优化,克服了传热路径无法自适应配置问题。仿真结果表明,所提方法可有效减小传热退化对模型计算结果的影响,实现对IGBT模块热行为动态变化的精确模拟,且结温估计结果相较传统CTN模型的更为精确。     

Characterization of solar cells by thermal transient testing

The current paper deals with the application of thermal transient testing as a characterization tool for solar modules. Based on the measurement of different samples (concentrator solar cell, single junction silicon solar cell) we prove the applicability of this measurement technique and address some specific issues of the characterization of solar cells by the thermal transient method.From the measurement metrics such as junction-to-base plate thermal resistance and thermal capacitance(s) can be derived and can serve as a basis of a multi domain solar cell model. The used technique also enables us to verify the quality of attachment layers in a solar module allowing fair quality control and reliability analysis of these devices. Finally a method is proposed to regain the data that is covered by the initial electric transient following the power step. This initial electric transient can be high in large surface devices like solar cells, and covers valuable data describing the structure near to the p–n junction. To eliminate this, simulated transients were fitted to the part of the actual measured thermal transient where the electric transient already decayed. This way the part of the thermal transient that was covered by the electric transient can be reconstructed.     

建立封装芯片热阻网络模型的方法研究

针对电子设备系统级热分析中封装芯片模型复杂程度与计算精度的矛盾,引入热阻网络法,替代系统级分析中封装芯片的详细物理模型;并以某PBGA封装芯片为例,进行两种建模方法的对比分析,同时介绍一种快速确定网络中热阻值的方法.结果表明,热阻网络等效方法具有模型简单、分析快速、准确度高的优点,在系统级热分析中可完全替代详细的物理模型.     

Parametric compact models for the 72-pins polymer stud grid array™

A compact model or thermal resistor network of a 72-pins polymer stud grid array (PSGA) assembly is presented. A general thermal network is simplified to a compact model with seven resistors. Secondly, the effect of the chip dimensions on the different thermal resistors is investigated. Thirdly, the compact models are synthesized in a response surface model (RSM). Any customer can then calculate the compact model for his specific application by filling in the geometry properties of the package in the RSM-equations and calculating the maximal temperature in the assembly.     

High-powered thermal gel degradation evaluation on board-level HFCBGA subjected to reliability tests

HFCBGA is a thermally enhanced FCBGA with its heat spreader extending the heat conduction area by connecting itself to the rear side of the silicon die. A thermal interface material plays an important role as a heat conduction path. The thermal performance should not only be checked at time zero, and several reliability tests have to be undertaken to uncover the field conditions faced by end users. A temperature cycling test, highly-accelerated temperature and humidity stress test and multiple reflows are utilized to investigate the thermal resistance of junction to case of a selected thermal gel.     

CO2激光辐照下热敏电阻温升的数值计算与实验

对激光照射下热敏电阻的温升进行计算,得到温升和热敏电阻输出信号与入射激光功率的关系：当激光功率小于热敏电阻的破坏阈值时,输出信号与激光功率近似线性关系;同时计算了破坏阈值的大小。实验采用CO2激光器,测量了热敏电阻输出信号与入射激光功率的曲线,分析表明,热敏电阻吸收激光能量造成的热破坏是主要原因,在允许的误差范围内,计算与实验结果基本一致。     

Dynamic electrothermal simulation of integrated resistors at device level

This paper presents the dynamic electrothermal simulation of a rectangular resistor integrated on a semi-conductor substrate. Due to the temperature dependence of the electrical conductivity of the resistive sheet, self-heating provokes a coupling between the electrical and thermal problem and gives rise to nonlinear phenomena. We introduce a time stepping iterative method to perform the calculations. The electrical and thermal solvers are based on FEM and Green's functions techniques, respectively. An extensive dynamic analysis of the device will be presented. The results include heating and cooling curves, Nyquist plot (complex locus) of the thermal impedance, time constant spectrum and structure function. Comparisons with the linear case, i.e. a temperature independent resistor, are made and accompanied by analytical approximations if possible. One key observation is that the nonlinearity may easily be overlooked: its detection is only possible in particular characteristics.     

Thermal stability analysis of AlGaAs/GaAs heterojunction bipolartransistors with multiple emitter fingers

A numerical electro-thermal model was developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) to describe the base current, current gain and output power dependence on junction temperature. The model is applied to microwave HBT devices with multi-emitter fingers. The calculated results of the common-emitter, current-voltage characteristics in the linear active region show a “current crush” effect due to inherent nonuniform junction temperature, current density and current gain distribution in the device. The formation of highly localized high temperature regions, i.e., hot spots, occur when the device is operating beyond the current-crush point. This thermally induced current instability imposes an upper limit on the power capability of HBT's. The dependence of this effect on various factors is discussed. These factors include the intrinsic parameters such as the base current ideality factor, the “apparent” valence band discontinuity, and the temperature coefficient of the emitter-base turn-on voltage, as well as the extrinsic factors such as the emitter contact specific resistance, the substrate thermal conductivity and the heat source layout     

Photovoltaics in a single dimension

Whereas the conversion of radiation in 3 dimensions into electrical work (e.g. solar energy conversion) gives rise to laborious numerical computation, the conversion efficiency of radiation in a single dimension (e.g. resistor noise) can be treated by simple analytical calculations. It turns out that a single diode converts 1-D radiation with an efficiency not exceeding 6[log (2)/π]² = 0.29, whereas the single junction solar cell is able to convert 3-D radiation with an efficiency up to 0.44. In an electrical network with non-uniform temperature, a diode is able to convert the thermal noise of a resistor into useful work with an efficiency equal to 0.29 times the square of the Carnot efficiency, a value substantially smaller than the Carnot efficiency itself.