Chemistry and Structure of Beta Silicon Carbide Implanted with High-Dose Aluminum

Single-crystal β-SiC was implanted with aluminum to 3.90 × 10¹⁷ ions/cm² at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si-to-C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β-SiC crystals and textured crystalline aluminum carbide precipitates     

Adsorption of Colloidal Silica on Alumina and of Colloidal Alumina on Silica

The mutual adsorption of colloidal silica on alumina and of colloidal alumina on silica and silicate materials occurs in aqueous suspension at about pH 4. It is shown that the adsorption of colloidal particles on the surface of opposite charge is limited to essentially a monoparticle layer. An adsorbed layer of fibrils of colloidal alumina on the surfaces of silica, asbestos, graphite, and finely divided clay is shown in electron micrographs. The effect of the adsorbed colloid on dispersibility of the substrate materials is discussed.     

Polyvalent States of Chromium Ions in Silica Glasses Prepared by Plasma-Chemical Deposition

The spectral–luminescent properties of chromium-doped silica glass prepared by gas-phase plasma-chemical deposition are investigated. The absorption, photoluminescence, and EPR spectra are measured for bulk glass samples in the form of a core of optical fiber preforms. The influence of gamma irradiation and additional reducing thermochemical treatment on the spectral characteristics of the synthesized glasses is analyzed.     

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

Polycrystalline 3C silicon carbide (SiC) was implanted at room temperature with 400 keV cesium ions to a dose of 10¹⁶ ions/cm². The samples were annealed at 600°C–1000°C for times up to 48 h to observe changes in the implantation zone crystallinity and density. The implanted regions were characterized by transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) before and after annealing. It is shown that the implantation resulted in a 217 ± 2 nm amorphous region with microstructural damage extending to ~250 nm below the surface. Recrystallization of the amorphous region was observed to begin at 725°C. Densification was determined indirectly through changes in the measured implantation zone thickness. Measurable thickness, or densification, of the implanted region was not observed until temperatures greater than ~800°C. The SiC recrystallization began at the interface between the amorphous, damaged region, and the underlying polycrystalline material. Image analysis was used to quantify the fraction of crystalline phase as a function of time and temperature. The recrystallization kinetics exhibited Arrhenius dependency with an apparent activation energy of 480 kJ/mol. SIMS demonstrated that 60%–70% of the cesium was retained within the recrystallized microstructure after thermal annealing.     

Dispersion of Alumina and Silicon Carbide Powders in Alumina Sol

Dispersion of Al₂O₃ and SiC particles in an alumina sol has been investigated through determination of particle-size distribution, zeta potential, and agglomerate morphology. The particle size of Al₂O₃ and SiC (as determined by the particle-size analyzer) is strongly affected by the presence of alumina sol in the solution. The average agglomerate size is decreased by at least 50%. The zeta potential of Al₂O₃ in 1 M alumina sol increases slightly, whereas that of SiC reverses its sign over a wide range of pH values. It is proposed that these effects are caused by AlO₄Al₁₂(OH)₂₄(H₂O)⁷⁺₁₂ sol clusters (1-2 nm in size) that are absorbed on the surface of the large (1-5 µm) ceramic particles. The electrostatic and steric effects of the cluster absorption help to control the dispersion and stabilize the suspension of ceramic particles in the alumina sol during wet processing. It is expected that the alumina-sol clusters can be used as an efficient, clean dispersant for single-phase and composite ceramic powders.     

Fabrication of Silicon Carbide Whisker/Alumina Composite by Thermal-Gradient Chemical Vapor Infiltration

SiC( w )/Al₂O₃ composites were made from an AlCl₃-H₂-CO₂ mixture by a thermal-gradient chemical vapor infiltration (CVI) method. Al₂O₃ was deposited from the reaction of AlCl₃ and H₂O, which was produced from the oxidation of H₂ by CO₂. The densification rate was measured at various reactant compositions and total pressures. When the reaction rate or total pressure increased, the rate-controling step shifted from H₂O production to AlCl₃ diffusion, which led to premature pore closing. To obtain dense composites in a short infiltration time, the diffusion rate of AlCl₃ had to be increased by decreasing the total pressure.     

Alumina Substructure and Electrical Conductivity in Vitreous Silica

A network of alumina cells that remains after a vitreous silica sphere is heated in hydrogen supports the suggestion that alumina and associated sodium and lithium ions in vitreous silica are nonuniformly distributed. This distribution explains the anomalously large diffusion coefficient and electrical mobility of these alkali ions in vitreous silica.     

Effect of Silica Surface Dopants on the Formation of Alumina/Aluminum Composites by the Directed Metal Oxidation of an Aluminum Alloy

This study focused on clarifying the effect of SiO₂ surface dopants on the formation of Al₂O₃/aluminum composites, especially on oxidation phenomena during the incubation period. The present results showed that a surface dopant decreased the incubation period of an Al-Mg-Si alloy, as well as that of an Al-Mg alloy, and that addition of an external surface dopant decreased the incubation period more effectively than did an internal alloying of silicon. A two-step oxidation process was also conducted. In the first step of the process, an aluminum alloy was oxidized without a surface dopant and cooled to room temperature during the incubation stage. In the second step, the same specimen was surface-doped with SiO₂ powder and reoxidized. The incubation time for the specimen subjected to the two-step oxidation process was the same as that for the single-step specimen oxidized with a surface dopant. The substantial decrease in the incubation period, especially for the Al-Mg alloy, is ascribed to interaction between the SiO₂ surface dopant and the MgO layer. This interaction made the MgO layer thinner and increased the number of magnesium vacancies in the MgO layer, thus providing an appropriate microstructure in the MgO layer for bulk-growth initiation.     

Cathodoluminescence from Implanted and Anodized Polycrystalline Silicon Films

Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue emission is enhanced by implantation and by slight anodization treatments. Our investigations are consistent with previous PL results and indicate that the origin of blue emission is related to quantum confinement effects. On the other hand, the effect of annealing in these samples is a reduction of the CL signal that could be related to the increase of the nanocrystals size.     

浅谈硅微粉在氧化铝泡沫陶瓷中的作用

本文简单阐述了硅微粉的分类、应用和性质,分析了硅微粉在氧化铝泡沫陶瓷中的作用及高温反应的结合机理,同时研究了硅微粉对氧化铝泡沫陶瓷浆料性能和制品性能的影响。经试验分析,适量的硅微粉可促进氧化铝泡沫陶瓷的烧结,提高制品的强度,而对氧化铝浆料无不良影响。     

硅铝陶瓷涂料的制备和性能研究

以水性纳米二氧化硅溶胶、铝溶胶为成膜材料,用自制的胶凝固化剂,添加消泡剂、流平剂等功能性助剂,组成了新型无机陶瓷质涂料。经检测其具有优异性能：6H以上的高硬度,可在600℃下长期使用,室外耐候可达30 a以上,不燃烧也不助燃,不含有机VOC,不含有毒重金属。     

Residual Stress Measurements in Alumina and Silicon Carbide

Residual stresses were measured in three types of ceramic components. Stresses were measured using X-ray diffraction and an advanced X-ray instrument. Measured stresses in alumina rods were shown to correlate well with breaking strength, and stress variations in an alumina tile were hypothesized to result from inhomogeneous cooling. The compressive stresses induced in a silicon carbide tube, by an outer steel sleeve, were seen to be balanced by tensile stresses in the sleeve.     

Diffusion of Alkali Ions in Vitreous Silica

The diffusion of Cs⁺, Rb⁺, and K⁺ ions was measured in three grades of vitreous SiO₂ by the radiotracer-sectioning technique or Rutherford, backscattering spectroscopy. The values of the diffusion coefficient, D , at 1000°C decrease strongly with increasing ionic radius, changing by about two and one-half orders of magnitude per row of the periodic table. The difference between D_Cs and D_Rb is largely in the preexponential factor D_o in the Arrhenius expression rather than in the activation enthalpy Q . The values of D are much smaller than the tracer D values for the alkali metal ion in homogeneous Rb or Cs silicate glasses. Residual metallic impurities in the SiO₂ decrease both Q and D_o for the diffusion of Rb. The results are analyzed in terms of the interstitial structure of vitreous SiO₂.     

铝盐在沉淀法白炭黑中的应用

简述了铝盐在沉淀法白炭黑中的应用现状，添加铝盐对白炭黑物理化学性能的影响和含铝沉淀法白炭黑的用途进行了阐述。     

SiO_2掺杂Al_2O_3气凝胶改性研究

以仲丁醇铝与正硅酸乙酯为原料,选取甲酰胺为干燥控制化学添加剂和调凝剂,采用溶胶-凝胶法制备SiO_2-Al_2O_3凝胶,并通过老化、超临界干燥工艺得到了乳白色、轻质、块状无裂纹的硅铝二元气凝胶。将气凝胶进行高温热处理,从室温到1300°C范围内,气凝胶能够保持块状无坍塌、微裂纹产生,其1300°C比表面积维持在55 m~2/g。采用SEM、TEM、XRD、BET等手段系统探究了SiO_2含量对Al_2O_3气凝胶性能与结构的影响,着重分析了硅元素掺杂对热稳定性的改善机理。     

Polishing Behavior and Surface Quality of Alumina and Alumina/Silicon Carbide Nanocomposites

The response of Al₂O₃ and Al₂O₃/SiC nanocomposites to lapping and polishing after initial grinding was investigated in terms of changes in surface quality with time for various grit sizes. The surface quality was quantified by surface roughness ( R _a ) and by the relative areas of smooth polished surfaces as opposed to rough as-ground areas. Polishing behavior of the materials was discussed in terms of SiC content and grain size. It was concluded that nanocomposites are more resistant to surface damage than Al₂O₃, and this behavior does not depend on the amount of SiC in the range 1–5 vol%. SiC addition ≥1 vol% is enough to produce a noticeable improvement in surface quality during lapping and polishing.     

Singular Grain Boundaries in Alumina Doped with Silica

Pure Al₂O₃ powder compact sintered at 1400°C after adding 100 mol ppm of SiO₂ shows grain boundaries that are flat, even across the triple junctions. TEM observations show that these flat grain boundaries are parallel to the basal planes of the grains on one side. These flat grain boundaries must be singular. At such a low SiO₂ concentration and a low temperature, it is very unlikely that any liquid phase is present at these grain boundaries to cause such flat boundary shapes.