The Effect of Charge Transport Mechanisms on the Efficiency of Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript>As/GaAs Photodiodes

Photovoltaic characteristics of heterostructure Al_xGa_{1 – x}As/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power density of up to 200 W/cm² at a wavelength λ = 830 nm. A relationship was demonstrated between the “saturation currents” for the diffusion-related charge-transport mechanism (Shockley) in p–i–n photodiodes, calculated from dark current–voltage characteristics, and the experimental values of efficiency. As the “saturation current” of the diffusion-related charge-transport mechanism increases by an order of magnitude, a relative decrease in the efficiency from the maximum value by more than 10% is observed under excitation by constant or pulsed monochromatic light.     

Hybrid Josephson Junctions with Iron-based and Conventional Superconductor Electrodes

We investigate the iron-based superconductor Ba(Fe _1?x Co _x ) ₂As ₂ (Ba-122) regarding its superconducting properties and possible applications. Therefore, Ba-122 thin films are used as base electrode to prepare different kinds of hybrid Josephson junctions with a counter electrode of the conventional superconductor Pb. Additionally, we use both c-axis and a b-plane transport geometries and different kinds of barriers like interface-engineered surfaces, sputtered titanium oxide and gold layers. Temperature dependent I– V characteristics as well as magnetic field dependence and microwave response of the junctions are shown. The examined I– V characteristics and I _c R _n– T behaviours of each junction type are compared and described according to the electrical behaviour of the respective normal conducting or insulating barrier. While the I _c R _n product of the interface-engineered barrier junction was 12 μV and the planar junction with Au barrier showed 18 μV, we could increase the I _c R _n to 90 μV for planar TiO _x barrier junctions.     

The thermovoltaic effect in variband solid solution Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (0 ≤ <Emphasis Type="Italic">x</Emphasis> ≤ 1)

The thermovoltaic effect in films of variband solid solution Si_1–x Ge _x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si_1–x Ge _x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.     

Kinetics of gas-phase conversion of U<Subscript>3</Subscript>O<Subscript>8</Subscript> into water-soluble compounds in nitrating atmosphere at 25–30°С

The kinetics of the gas-phase conversion of U₃O₈ in NO_x–H₂O (vapor)–air and HNO₃ (vapor)–H₂O (vapor)–air atmospheres was fitted by the Kazeev–Kolmogorov–Erofeev equation. The following parameters n and K were obtained: for experiments in NO_x–H₂O (vapor)–air atmosphere, n = 0.2 ± 0.1 and K = 0.2 ± 0.2 h^–1; for experiments in HNO₃ (vapor)–H₂O (vapor)–air atmosphere, n = 0.3 ± 0.2 and K = 0.03 ± 0.02 h^–1 (confidence probability p = 0.95). For the U₃O₈ conversion in both media, n < 0.5, which suggests the diffusion control of the U₃O₈ conversion under the action of both HNO₃ and NO_x.     

Growth of epitaxial Cd<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Te films

We have studied the growth and structure of epitaxial films of Cd_1–xMn_x (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd_1–xMn_xTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.     

Electrochemical etching of <Emphasis Type="Italic">p–n</Emphasis>-GaN/AlGaN photoelectrodes

Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.     

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p–n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.     

Lattice Energy Determination for Polycrystalline Oxide Ceramics and Single-Crystalline Counterparts

The compositional dependence of lattice energies for polycrystalline specimens of spinel ferrite systems, Zn _x Co_1?x Fe₂ O ₄ (x = 0.0–0.6); slowly cooled and quenched systems of CuAl _x Fe_2?x O ₄ (x = 0.0–0.6); high-energy ball milled mixed ferrite composition, Ni_0.5Zn_0.5Fe₂ O ₄ (0–9 h); garnet system, Y_3?x Fe_{5 + x} O ₁₂ (x = 0.0–0.5); manganite perovskite system, La_1?x Ca _x MnO₃ (x = 0.0–1.0); and superconducting systems, Bi_1.7?x Pb_0.3Al _x Sr₂Ca₂Cu₃ O ₁₀ (x = 0.0–0.3), Bi_1.7?x Pb_0.3Ga _x Sr₂CaCu₂ O ₈ (x = 0.0–0.3), and Bi₂Sr₂CaCu₂ O ₈+0??5 % Ag ⁺ addition has been evaluated, making use of mean sound velocity data and employing Kudriavtsev’s approach. It is found that for all the systems, lattice energy decreases, and it is explained based on the change in structural and microstructural parameters as a function of substitution. The lattice energies for single-crystalline counterparts have been computed using four different estimation models based on Kapustinskii method, molecular volume and X-ray density, connectivity indices, and chemical hardness. The observed difference between the two has been discussed in the light of grain and grain boundary contributions and presence of pores and microcracks in polycrystalline materials. A simple model suggested for lattice energy determination for complex oxide compositions based on the oxide additivity rule was found to be quite satisfactory.     

Thermal properties and phase diagrams of water–hydrocarbon systems

The phase equilibria of immiscible binary systems (water–n-hexane, water–n-pentane) are investigated using a constant-volume piezometer. The measurements were performed under normal conditions, based on P,V,T,x-data obtained in the temperature range of 300–680 K, pressures up to 60 MPa, and in a wide range of densities. Based on the experimental data, we constructed phase diagrams in the P–T and T–x coordinates and determined the Krichevskii parameters for the system of water–n-hexane near the critical point of the pure solvent.     

Correlation between the electrical and luminescent properties of high-purity gallium arsenide

Epitaxial n-GaAs layers with a background impurity concentration of N_D-N_A<10¹⁵ cm^?3, grown by chloride vapor phase epitaxy in an open system, exhibit correlation between the electrical properties and the long persistence of the edge photoluminescence lines D⁰x and D⁰h related to the hole trapping centers. An increase in the concentration of such trapping centers in n-GaAs leads to a decrease in the mobility of free charge carriers.     

First-Principle Study of Electronic and Half-Metallic Ferromagnetic Properties of Vanadium (V)-Doped Cubic BP and InP

In this study, we use the first-principle calculations of density functional theory with gradient generalized approximation of Wu–Cohen to investigate the doping effect of vanadium impurity on structural, electronic and magnetic properties of In_1?x V _x P and B_1?x V _x P alloys at various concentrations x = 0.0625, 0.125 and 0.25. Owing to the metallic nature of majority spin and semiconducting minority spin, the In_1?x V _x P compounds exhibit a half-metallic character with total magnetic moments of 2 μ _B, while the B_1?x V _x P has metallic nature for all concentrations. The results of exchange parameters revealed that exchange coupling between vanadium atoms and the conduction band is ferromagnetic, confirming the magnetic feature of In_1?x V _x P and B_1?x V _x P. From our findings, we have predicted that the In_1?x V _x P alloys seem to be potential materials for spintronics.     

Ferromagnetism in Fe-doped BaTiO<Subscript>3</Subscript> Ceramics

Polycrystalline samples of BaTi_1?xFe_xO₃ (x = 0.00–0.30) are prepared by solid-state reaction method and their structural and magnetic properties are studied. Detailed investigation of XRD patterns reveal the coexistence of tetragonal (space group P4mm) and hexagonal phases (space group P6 ₃/mmc) for x ≥ 0.1. Magnetic measurements reveal room-temperature ferromagnetism in x = 0.15–0.3 samples, and their ferromagnetic transition temperature increases from 397 K for x = 0.15 to 464 K for x = 0.3. The initial magnetization curves for x = 0.15–0.3 are analyzed in terms of bound magnetic polaron (BMP) model. The analysis of susceptibility data in the paramagnetic region by Curie-Weiss law confirms the ferromagnetic transition for x ≥ 0.15 and the effective magnetic moment systematically increases with increase in Fe concentration.     

Spectral sensitivity of (Si<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(CdS)<Subscript>x</Subscript> solid solutions

Epitaxial layers of n-type solid solutions of the (Si₂)_{1 ? x} (CdS)_x system (0 ≤ x ≤ 0.01) were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal p-type single crystal silicon substrates. The photosensitivity spectra of p-Si/n-(Si₂)_{1 ? x} (CdS)_x structures have been measured. A photoresponse peak at E ≈ 2.35 eV (1.25 eV below the top of the valence band of silicon) has been observed, which is probably related to an impurity level due to CdS molecules.     

Structural Formation and Improved Performances of Chemically Synthesized Composition-Controlled Micron-Sized Fe100−x Co x Particles

Micron-sized composition-controlled Fe_100?x Co _x (20 < x < 75) alloy particles with high purity have been prepared by an optimized reduction reaction. The influence of Co content on the alloying process, structures, and magnetic properties of the products has been studied. The as-synthesized Fe_{100 ?x} Co _x with x < 65 exhibit a single bcc crystal structure. A bcc-FeCo/fcc-Co composite structure can be formed in the Fe_100?x Co _x products with x > 65. Very slight surface oxidation is observed in all the products. The high purity and single bcc-FeCo phase for the well-alloyed Fe_{100 ?x} Co _x particles with x < 65 lead to their high saturation magnetization of 182–220 A m² kg^?1. All the well-alloyed Fe_{100 ?x} Co _x show nearly spherical morphologies with an average particle size of 2–8 μm, which results in their good compactibility with a high compacted density of about 7.4–7.6 g cm^?3. The simple preparation and improved performances for these chemically synthesized composition-controlled FeCo particles show their great potential for applications in near-net-shaped and complex-shaped FeCo-based soft magnetic composite devices.     

Structural investigation of V<Subscript>2</Subscript>O<Subscript>5</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript>–K<Subscript>2</Subscript>O glass system with antibacterial potential

The xV₂O(1?x)[0.8 P₂O₅ ? 0.2 K₂O] glass system with 0 ≤ x ≤ 50 mol% was prepared and the structural changes induced in these glasses by increasing the vanadium oxide content were investigated by IR and ESR spectroscopies. The dual behaviour role of V₂O₅ oxide, as network modifier (for x ≤ 10 mol%) and the network former (x ≥ 20 mol%), as a consequence of phosphate network depolymerization and P–O–V and V–O–V linkages appearance was also highlighted. The antibacterial effect of the glasses with x ≤ 20 mol% V₂O₅ content was tested by optical density (OD) measurements. A linear correlation between the amount of vanadium and the antibacterial effect was evidenced.     

Crystal Structures and Magnetic Properties of the Co2Mn1−x V x Sb (0 ≤ x ≤ 1) Heusler Compounds

Crystal structure and magnetic properties of the Co₂Mn_1?x V _x Sb (0 ≤ x ≤ 1) Heusler compounds have been studied by X-ray powder diffraction (XRD), magnetometric measurements, and full-potential linearized augmented plane wave (FP–LAPW) method. All compounds crystallize in a cubic Cu₂MnAl-type crystal structure with the space group Fm–3m. The samples for x<0.8 have the Curie temperatures above room temperature, while the Curie temperature is observed at 68 K for the sample with x = 0.8. The saturation magnetization at 5 K decreases linearly with increasing vanadium concentration x. The values of the saturation magnetization obtained by FP–LAPW–local density approximation (LDA) calculations are in better agreement with the experimental results compared with the results obtained by FP–LAPW–generalized gradient approximation (GGA) calculations.     

Thermodynamic properties of (TeO<Subscript>2</Subscript>)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>(MoO<Subscript>3</Subscript>)<Subscript>1–<Emphasis Type="Italic">n</Emphasis></Subscript> glasses

The thermal behavior of (TeO₂) _n (MoO₃)_1–n (n = 0.75, 0.85, 0.90) tellurite glasses has been studied by differential scanning calorimetry in the range from T = 300 to T = 850 K and heat capacity has been measured in the temperature range. The thermodynamic characteristics of the devitrification process and glassy state have been determined. The experimental data obtained have been used to evaluate the standard thermodynamic functions of the system in glassy and supercooled liquid states: heat capacity C _p °(T), enthalpy H°(T)–H°(320), entropy S°(T)–S°(320), and Gibbs function G°(T)–G°(320) in the temperature range 320–630 K. The composition dependences of the glass transition temperature and thermodynamic functions for the glasses have been obtained. The thermal and thermodynamic properties of the tellurite glasses have been compared to those of previously studied (TeO₂) _n (WO₃)_1–n and (TeO₂) _n (ZnO)_1–n glasses.     

NaF induced enhancement of luminous efficiency in narrow-band red-emitting K<Subscript>2</Subscript>TiF<Subscript>6</Subscript>:Mn<Superscript>4+</Superscript>@NaF phosphors

A series of K₂TiF₆:xMn⁴⁺ @NaF samples were prepared by the cation exchange method in HF solution. Coating effects of NaF on the fluorescent properties of the samples were discussed. It is interesting that NaF has induced enhancement of luminous efficiency for the samples. Mechanism of NaF induced enhanced luminescence effect was suggested. That is that the enhancement effect of NaF coating is mainly attributed to a suitable local distortion of the crystal field surrounding the Mn⁴⁺ activator through doping with NaF. The results indicate that the optimal conditions are x?=?0.07 and w_NaNO3?=?2.5 g. Decay lifetime and the photoluminescence quantum yield of the optimal sample are 5.25 ms and 99.19?±?0.03%, respectively. The chromaticity coordinates of the optimal sample are x?=?0.6926, y?=?0.3073. So, the phosphor emits deep red light, which can be applied for blue light-based white LED.     

On VLSI interconnect optimization and linear ordering problem

Some well-known VLSI interconnect optimizations problems for timing, power and cross-coupling noise immunity share a property that enables mapping them into a specialized Linear Ordering Problem (LOP). Unlike the general LOP problem which is NP-complete, this paper proves that the specialized one has a closed-form solution. Let f(x,y):?²→? be symmetric, non-negative, defined for x≥0 and y≥0, and let f(x,y) be twice differentiable, satisfying ? ² f(x,y)/?x?y<0. Let π be a permutation of {1,…,n}. The specialized LOP comprises n objects, each associated with a real value parameter r _i , 1≤i≤n, and a cost f(r _i ,r _j ) associated to any two objects if |π(i)?π(j)|=1,1≤i,j≤n, and f(r _i ,r _j )=0 otherwise. We show that the permutation π which minimizes \(\sum_{i= 1}^{n - 1} f( r_{\pi^{ - 1}( i )},r_{\pi^{ - 1}( i + 1 )} )\), called “symmetric hill”, is determined upfront by the relations between the parameter values r _i .     

Synthesis,Structure, and Superconductivity of (La1.5Pb0.5−<Emphasis Type="Italic">x</Emphasis>Sr<Emphasis Type="Italic">x</Emphasis>)CuO<Emphasis Type="Italic">z</Emphasis>

The substitution of strontium for lead in the material (La_1.5Pb_0.5?xSr _x )CuO _z , x = 0–0.15 has been carried out. A stable and reproducible single phased superconducting materials can be obtained inside an evacuated quartz tube. The X-ray diffraction pattern shows that the superconducting phase can be indexed on the basis of an orthorhombic symmetry (F_mmm) for x = 0 and on the basis of tetragonal symmetry (I_4/mmm) for x > 0. The transition temperature T _c increases as the strontium substitution parameter x increases. We observed the maximal T _c around x = 0.15 with 38 K with fairly large Meissner volume fraction of 38% (FC).