共查询到20条相似文献,搜索用时 62 毫秒
1.
GaAs MMIC应用展望 总被引:4,自引:1,他引:3
林金庭 《固体电子学研究与进展》1995,15(1):1-5
GaAs MMIC应用展望本刊主编林金庭中图分类号:TN454PerspectiveofGaAsMMICsApplication¥LinJinting1990年以前,砷化镓(GaAs)技术的80%是用于军事,随着冷战结束,高性能的GaAsIC向何处去... 相似文献
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GaAs单片电路封装 总被引:2,自引:0,他引:2
简述了微波在封装中的传输特性,以及不同封装型式和材料的GaAsMMIC封装,介绍了多层共烧陶瓷在MMIC封装中的应用。最后,综述了国外GaAsMMIC的最新封装与互连技术。 相似文献
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讨论了微波电性能测量在GaAsMMIC研制和开发中的重要作用,研究了X和Ku波段GaAsMMICLNA微波电性能测量及其测量系统设计所要注意的有关问题。给出了相关增益、噪声系数、输入和输出驻波比的测试结果,并介绍了这两个频段GaAsMMICLNA的应用情况。 相似文献
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GaAs器件及MMIC的可靠性研究进展 总被引:2,自引:0,他引:2
来萍 《固体电子学研究与进展》1995,15(4):381-390
介绍了国外GaAs微波器件及MMIC的可靠性研究进展情况,给出GaAsMESFET、HEMT和MMIC的主要失效模式和失效机理以及在典型沟道温度下的平均寿命代表值。 相似文献
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介绍了自主开发的多个完整实用的GaAs IC CAD软件,包括微波无源元件建模、微波有源器件测试建模、微波毫米波IC CAD、光电集成电路CAD、GaAs VHSIC CAD、微波高速MCM CAD等,并简要介绍了针对GaAs工艺线的建库工作。以上软件和库已用于多个通信电路的设计。 相似文献
6.
GaAs MMIC在移动通信中的应用 总被引:2,自引:1,他引:1
李涵秋 《固体电子学研究与进展》1995,15(4):396-402
便携式无线通信系统是GaAsMMIC潜在的民用大户。在简要陈述该新兴市场现状及前景的基础上,着重讨论GaAsMMIC占据该市场并成为其核心技术的策略。 相似文献
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本文重点论述GaAs IC CAD方法,包括:精确的GaAs MEsFET、HEMT和HBT等有源器件模型;大、小信号模型参数提取;噪声模型;成品优化;高频、高速微带传输线模型;电路模拟与优化;砷化镓门阵等。还评述了GaAs IC CAD集成软件包及进一步工作。 相似文献
10.
介绍了GaAs MMIC RF开关的设计方法,在这种方法中,把MESFET当作一个两端口网络处理,直接提取开与关两种状态下网络的S参数,应用S参数进行开关电路的CAD。这种设计方法更准确,更简单,容易实现。文中还给出了GaAs MMIC RF开关的研制结果。 相似文献
11.
Hiroshi Fujioka Hyunchul Sohn Eicke R. Weber Ashish Verma 《Journal of Electronic Materials》1993,22(12):1511-1514
Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of
this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher
photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically
reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising
for future integrated circuits which utilize GaAs/Si substrates. 相似文献
12.
GaAs and GaAs/Ge solar cells grown by metalorganic chemical vapor deposition (MOCVD) were characterized at very low temperature (-185°C) and solar intensity (0.25 suns) to simulate the cell behavior in a severe interplanetary environment. A comparison is also made with GaAs cells grown with the liquid-phase-epitaxy (LPE) technique. The analysis carried out from -185 to +50°C shows, in particular, different behaviors for GaAs/Ge cells with active and passive Ge substrates; the GaAs/Ge passive cell behaves as a GaAs on GaAs cell, indicating that from the thermal and optical point of view, Ge acts only as a mechanical support. The GaAs cell with an active Ga substrate is affected by a notch in the I -V curves, which is more evident at low temperatures but reduces at low intensities. The GaAs/GaAs MOCVD cell shows the best performance at low temperature and intensity with a conversion efficiency of 27.2% 相似文献
13.
Possibilities of obtaining laterally ordered arrays of GaAs nanowhiskers on GaAs (110) and GaAs(111)As surfaces during the molecular beam epitaxy are considered. As in the case of the GaAs(111)As substrate, nanowhiskers are formed in the hexagonal phase on the GaAs(110) surface, which is also confirmed by the patterns of the reflection high-energy electron diffraction (obtained during the growth of nanowhiskers) and by the photoluminescence spectra. 相似文献
14.
S. Shirakata Y. Fujiwara M. Kondo T. Nishino Y. Hamakawa 《Journal of Electronic Materials》1986,15(6):323-329
The interface stress at InGaPAs/GaAs heterostructure has been investigated using the energy shift and splitting of the Cr-related
zero-phonon photoluminescence line at 0.839 eV observed in GaAs. It has been found that the GaAs substrate suffers both compressive
uniaxial stress and tensile hydrostatic pressure at the InGaPAs/GaAs heterointerface. These shifts and splittings of the 0.839
eV line have been systematically examined as a function of the lattice mismatch between InGaPAs and GaAs, and the thicknesses
of the epitaxial-layer and substrate. The amount of the interface stress existing at InGaPAs/GaAs heterostructure has been
estimated, based on uniaxial stress data for GaAs: Cr wafers. 相似文献
15.
The sidegating effect of GaAs MESFETs in carbon doped semi-insulating GaAs substrate was investigated. Measurement results suggest that both the hole injection at one part of the gate electrode, and the modulation of the width of the depletion layer near the interface between the channel and substrate, cause the sidegating effect of GaAs MESFETs. Also, with the increase of carbon concentration, the latter cause becomes dominant in the sidegating effect.<> 相似文献
16.
《Electron Device Letters, IEEE》1985,6(10):505-506
The Kurokawa-Schlosser quality factor Q̂ is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q̂ is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs pin has the higher Q̂ and therefore should have improved characteristics as a switch in terms of insertion loss and isolation. 相似文献
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《Electron Device Letters, IEEE》1984,5(6):207-208
GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm. 相似文献
20.
《Electron Devices, IEEE Transactions on》1986,33(2):206-213
In order to assess GaAs on Si technology, we have made a performance comparison of GaAs MESFET's grown and fabricated on Si and GaAs substrates under identical conditions and report the first microwave results. The GaAs MESFET's on Si with 1.2-µm gate length (290-µm width) exhibited transconductances (gm ) of 180 mS/mm with good saturation and pinchoff whereas their counterparts on GaAs substrates exhibited gm of 170 mS/mm. A current gain cut-off frequency of 13.5 GHz was obtained, which compares with 12.9 GHz observed in similar-geometry GaAs MESFET's on GaAs substrates. The other circuit parameters determined from S-parameter measurements up to 18 GHz showed that whether the substrate is Si or GaAs does not seem to make a difference. Additionally, the microwave performance of these devices was about the same as that obtained in devices with identical geometry fabricated at Tektronix on GaAs substrates. The side-gating effect has also been measured in both types of devices with less than 10-percent decrease in drain current when 5 V is applied to a pad situated 5 µm away from the source. The magnitude of the sidegating effect was identical to within experimental determination for all side-gate biases in the studied range of 0 to -5 V. The light sensitivity of this effect was also very small with a change in drain current of less that 1 percent between dark and light conditions for a side gate bias of -5 V and a spacing of 5 µm. Carrier saturation velocity depth profiles showed that for both MESFET's on GaAs and Si substrates, the velocity was constant at 1.5 × 107cm/s to within 100-150 Å of the active layer-buffer layer interface. 相似文献