The ac response of a 2-D electron gas on liquid helium in a magnetic field

The low frequency ac response of a 2-D electron gas on liquid helium in a magnetic field is analysed in terms of _xx and _xy , the components of the magnetoresistivity tensor. The electrons are screened by parallel electrodes and the system forms a 2-D transmission line. The 2-D wave equation is solved numerically for a bounded electron sheet in a rectangular geometry which is excited by one of the electrodes. For 1, where is a relaxation time, heavily damped voltage waves propagate along the transmission line. In a field these waves propagate along the edges of the electron sheet with characteristic decay lengths or 2-D skin depths, parallel and perpendicular to the edges, which depend on _xx and _xy . The effects of these skin depths on measurements of the magnetoresistance and ac Hall effect are demonstrated. The relationship to the dc Hall effect and to edge magnetoplasmons is shown. The effects of incomplete screening, density inhomogeneities and edge capacitance are also discussed.     

Hall-Effect in LuNi2B2C and YNi2B2C Borocarbides in Normal and Superconducting Mixed States

It was shown that the Hall resistivity _xy for LuNi ₂ B ₂ C and YNi ₂ B ₂ C is negative in the normal and mixed states and has no sign reversal below T _c . In the mixed state the scaling relation _{xy xx} (_xx is the longitudinal resistivity) was found for both compounds with 2.0. In the normal state a distinct nonlinearity in the _xy(H) dependence, accompanied by a large magnetoresistance, was found below 40 K only for LuNi ₂ B ₂ C. The difference in the behaviour of Lu- and Y-based borocarbides seems to be connected with the difference in the Fermi surfaces of these compounds.     

Relaxations in semicrystalline polyethyleneterephthalate using thermally stimulated currents

Relaxation processes at temperatures above 20 °C in semicrystalline polyethylene-terephthalate have been studied using thermally stimulated depolarization currents (TSDC). The discharge curve shows three relaxation peaks (c, c and *) whose positions and intensities depend on the polarization conditions and the crystallinity. Relaxations c and c are heteropolar, while * may be homopolar or heteropolar according to the polarization temperature used. The effect of the crystallinity on these relaxations has been analysed by the thermal steps stimulation (TSS) method applied to an amorphous sample. Results show that c is fundamentally a dipolar relaxation associated with the amorphous interlamellar zone. The relaxation c is associated with the release of a free charge trapped in the amorphous regions, and * is a Maxwell–Wagner–Sillars relaxation associated with crystalline – amorphous interphases. For polarization temperatures above 150 °C, two relaxations are observed only as a consequence of overlapping C and * relaxations. © 1998 Chapman & Hall     

Temperature-density parameters of Freon-13 on the saturation line

Experimental data of a high degree of accuracy are presented on the temperature-density parameters of Freon-13 on the saturation line in the density range of (0.08246–1.6061)·10 kg/m³.Notation T absolute temperature of phase transition from two-phase to one-phase state (or vice versa) - T_c critical temperature - , densities of liquid and vapor, respectively, on saturation line - _c density at critical points - average density - =(T_c–T)/2 reduced temperature - parameter of order, equal to ' – _c – b for the liquid phase and _c + b – "for the vapor phase Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 37, No. 5, pp. 830–834, November, 1979.     

Structure of unidimensional temperature stresses

Using the structural approach, the temperature stresses are examined in a semiinfinite rod, insulated on the lateral faces and rigidly fixed at the end. A comparative analysis is made for three heat-transfer models.Notation k(t) heat flux relaxation function - (t) internal energy relaxation function - T rod temperature - ambient temperature - t time - x coordinate along the rod - _xx(x, t) stress - u(x, t) displacement - (x, t) deformation - c₀=(E/)^1/2 speed of sound in the rod under isothermal conditions - E elasticity modulus - density of the material - _t coefficient of thermal expansion - thermal-conductivity coefficient - a thermal-diffusivity coefficient - b thermal-activity coefficient - c_q=(a/_r)^1/2 velocity of heat propagation - _r heat flux relaxation time - (t) unique Heaviside function Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 33, No. 5, pp. 912–921, November, 1977.     

A method of joint determination of the effective coefficients of horizontal mixing of large particles and of external heat exchange in an organized fluidized bed

A method is proposed for the joint determination of the coefficients of horizontal particle diffusion and external heat exchange in a stagnant fluidized bed.Notation c_f, c_s, c_n specific heat capacities of gas, particles, and nozzle material, respectively, at constant pressure - D effective coefficient of particle diffusion horizontally (coefficient of horizontal thermal diffusivity of the bed) - d equivalent particle diameter - d_t tube diameter - H₀, H heights of bed at gas filtration velocities u₀ and u, respectively - H_a height of active section - l width of bed - L tube length - l _o width of heating chamber - N number of partition intervals - p=H/H₀ expansion of bed - s_n surface area of nozzle per unit volume of bed - S_h, S_v horizontal and vertical spacings between tubes - t_c, t₀, t_s, t_n, t_w initial temperature of heating chamber, entrance temperature of gas, particle temperature, nozzle temperature, and temperature of apparatus walls, respectively - u₀, u velocity of start of fluidization and gas filtration velocity - y horizontal coordinate - ^*, coefficient of external heat exchange between bed and walls of apparatus and nozzle - ₁, ₁, ₂, ... coefficients in (4) - thickness of tube wall - _b bubble concentration in bed - ₀ porosity of emulsion phase of bed - _n porosity of nozzle - =(t_s – t₀)/(t_c – t₀) dimensionless relative temperature of particles - _n coefficient of thermal conductivity of nozzle material - f, _s, _n densities of gas, particles, and nozzle material, respectively - _be=_s(1 – ₀) (1 – _b) average density of bed - time - _max time of onset of temperature maximum at a selected point of the bed - R =l _o/l Fourier number - Pe = ₁ l ²/D Péclet number - Bi = /_n Biot number Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 41, No. 3, pp. 457–464, September, 1981.     

Use of packed thermal diffusion columns to determine the soret coefficient in a benzene-carbon tetrachloride mixture

Experimental results of the determination of the Soret coefficient of a benzene-carbon tetrachloride mixture in a packed column with reservoirs at the ends are presented.Notation c concentration - density - z vertical coordinate - L length of the column - d diameter of the glass balls - coefficient of dynamic viscosity - coefficient of thermal expansion - k permeability of the packing - T temperature - B perimeter of the working gap - H and K transport coefficients - M mass of the fluid in the reservoir at the end of the column - M/BL - y Hz/K - H sg²k(T)²B/12) Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 41, No. 3, pp. 503–506, September, 1981.     

Shear viscosity of liquid4He and3He-4He mixtures,especially near the superfluid transition

High-resolution measurements of are reported for liquid⁴He and³He-⁴He mixtures at saturated vapor pressures between 1.2 and 4.2 K with particular emphasis on the superfluid transition. Here is the mass density, the shear viscosity, and in the superfluid phase both and are the contributions from the normal component of the fluid ( _n and _n ). The experiments were performed with a torsional oscillator operating at 151 Hz. The mole fraction X of³He in the mixtures ranged from 0.03 to 0.65. New data for the total density and data for _n by various authors led to the calculation of . For⁴He, the results for are compared with published ones, both in the normal and superfluid phases, and also with predictions in the normal phase both over a broad range and close to T. The behavior of and of in mixtures if presented. The sloped/dT near T and its change at the superfluid transition are found to decrease with increasing³He concentration. Measurements at one temperature of versus pressure indicate a decreasing dependence of on molar volume asX(³He) increases. Comparison of at T, the minimum of _n in the superfluid phase and the temperature of this minimum is made with previous measurements. Thermal conductivity measurements in the mixtures, carried out simultaneously with those of , revealed no difference in the recorded superfluid transition, contrary to earlier work. In the appendices, we present data from new measurements of the total density for the same mixtures used in viscosity experiments. Furthermore, we discuss the data for _n determined for⁴He and for³He-⁴He mixtures, and which are used in the analysis of the data.     

Ordinary size effects and deviations from Matthiessen's rule in the resistance of fine wires

Contrary to previous statements in the literature, large deviations from Matthiessen's rule in fine wiresare to be expected on the basis of a straight-forward solution of the ordinary transport equation, assuming the relaxation-time approximation and imposing the idealized condition of diffuse scattering of electrons at the boundaries. Using Chambers' path-integral method to evaluate the current density in a wire of arbitrary cross-sectional shape, the effects of boundary scattering on the resistivity in the regimed 0.1 have been calculated for two model Fermi surface geometries. For the temperature-dependent part of the resistivity, _d (T) _d (T)– _d (0), two distinct types of behavior are found in the alternative cases: (1) for a spherical Fermi surface, _d(T) increases logarithmically with _d(0); (2) for a cylindrical Fermi surface, _d (T) increases essentially linearly with _d (0). [In each case the qualitative dependence of _d(0) on /d is, for practical purposes, linear. However, the correct value of the product in the cylindrical case is not simply given in the ordinary way by the slope of an empirical plot of _d (0) vs.d ^–1.] A comparison of theoretical results for the two simple models with the published data for indium and gallium shows that the actual temperature-dependent size effects are consistent, both qualitatively and, by a rough estimation, quantitatively, with the expected behavior.     

Observation of Hall Scaling in MgB2 Thin Films

We have measured the Hall resistivity, _xy , and the longitudinal resistivity, _xx , in superconducting MgB₂ thin films in a mixed-state while changing the magnetic field and the current density. A Hall scaling behavior without the anomalous Hall effect was observed with a exponent of 2.0±0.1 in _xy =A _xx . This exponent is observed to be constant, i.e., independent of magnetic field, temperature, and current density.     

Sliding wigner solid on liquid4He

We report a systematic experimental study of the anomalous nonlinear magnetotransport in the Wigner solid (WS) trapped on a liquid⁴He surface. The ac Corbino conductivity _xx exhibits an abrupt jump at a certain driving voltage. The threshold input voltage V_th for the _xx jump varies as V_th B^{–0.8 –1} n^1.5 _sE, where B, , n_s, and E are magnetic field, frequency, electron density and pressing electric field, respectively. We interpret the _xx jump as the transition between the WS accompanied with the periodic 4He surface deformation and the WS which decouples from the surface, due to the large driving force. A simple model is presented: The rigid-potential sliding model qualitatively explains the above mentioned behaviors of V_th. We have found that the dependences of _xx on B and E are different from those of the liquid phase. The anomalous behaviors of _xx play a crucial role on the sliding model.     

Temperature dependence of electrical resistivity of deformed and undeformed V-rich V3Si single crystals

The electrical resistivity (T) of V-rich V₃Si single crystals (T _c-11.4 K) was measured from 4.2 to 300 K along the directions of [1 0 0] and [1 1 1] before and after plastic deformation at 1573 K. Anisotropy of (T) was observed although V₃Si has the cubic A15 structure. Plastic deformation does not affect the normal-state (T) behaviour but changes the normal-superconducting transition width T_c. At low temperatures (T _c<T 40 K), (T) varies approximately as T ⁿ where n-2.5 and this behaviour does not contradict the (0)- phase-diagram plot proposed by Gurvitch, where is the electron-phonon coupling constant and (0) is the residual resistivity.     

Effects of phase fluctuation on a mixture of rotating superfluids

It is shown that if the root-mean-square of the gradient of the phase fluctuation of either of the components exceeds the corresponding inverse of the coherence length or if the chemical potential exceeds ₁ ⁰ or ₂ ⁰ , where is the volume integrals of the interaction function between the components, and ₁ ⁰ , ₂ ⁰ are the densities of the two components, the mixture of two rotating superfluids has an instability.     

Behaviour of amorphous poly(ethylene terephthalate) annealed at T<T g by thermally stimulated currents

Thermally stimulated current (TSC) discharges in open circuit of amorphous poly(ethylene terephthalate) (PET) corona-charged electrets show a heteropolar relaxation at 87 °C, ₁ between and peaks. This relaxation tends to become homopolar when the sample is annealed at temperatures below the glass transition temperature. This is due to the formation of a trapped charge density on the surface of the material that originates, during the TSC discharge, a current that counteracts the one that results in ₁ This trapping effect, which initially is null, increases with annealing due to the rise in resistivity. On the other hand, TSC discharges in short-circuited annealed samples result in a heteropolar peak, ^*, that corresponds to ₁ The area of ^* increases with the annealing time in a bounded way. This peak is related to the formation of thermal nuclei (embryos) in the bulk of the material that act as heterogeneities. This suggests that ₁ is associated with a barrier-type polarization. If the annealed sample is heated to temperatures above the glass transition temperature, the tendency to the inversion of ₁ vanishes and ^* disappears, whereas and are modified. This suggests that relaxation is related to a Maxwell-Wagner-Sillars effect.     

Temperature effects on the properties of Ge thin films

The effects of substrate temperature (T_s) on the properties of vacuum evaporated p-type Ge thin films have been investigated for 25s<400°C. Increase in the substrate temperature improves the crystallinity and increases the grain size resulting a gradual change from amorphous to polycrystalline structure which was attained above a substrate temperature of 225°C. Low resistive (1×10^–2 ohm-cm) and high mobility (280 cm²/V·s) films were obtained at T_s=400°C. It has been observed that the conduction mechanism in polycrystalline films was dominated successively by hopping, tunneling and thermionic emission as the sample temperature was increased from 40 to 400 K. In amorphous samples, conduction was described in terms of different hopping mechanisms.     

Radiation of internal waves during vertical motion of a body through a nonuniform liquid

Energy losses to radiation of internal waves during the vertical motion of a point dipole in two-dimensional and three-dimensional cases are computed.Notation _o(z), p_o(z) density and pressure of the ground state - z vertical coordinate - v, p, perturbed velocity, pressure, and density - H(d 1n _o/dz)^–1 characteristic length scale for stratification - N=(gH^–1–g²c _o ^–2 )^1/2 Weisel-Brent frequency - g acceleration of gravity - c_o speed of sound - vertical component of the perturbed velocity - V vector operator - k wave vector - frequency - d vector surface element - W magnitude of the energy losses - (t), (r) (x)(y)(z) Dirac functions - v_o velocity of motion of the source of perturbations - d dipole moment of the doublet - _o,l length dimension parameters - _o intensity of the source Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 39, No. 4, pp. 619–623, October, 1980.     

Equation of state of a3He-4He mixture near its liquid-vapor critical point

Measurements of the pressure coefficient (P/T)_,x are reported for a ³ He- ⁴ He mixture with a mole fractionX=0.805 of ³ He in the neighborhood of the liquid-vapor critical point. These include data on 16 isochores taken over the density interval–0.50.5 and over the temperature range–0.1 t0.1, where =(– _c )/ _c andt=(T-T _c )/T _c ,with _c andT _c ,respectively, the critical density and temperature of the mixture. From the discontinuity of (P/T)_,x at the boundary between the two-phase and the one-phase regions we determine the dew-bubble curve nearT _c with better precision than was done in recentPVT experiments. From the extrapolation of data not approachingT _c closer than1 mK, (P/T)_,x along the critical isochore appears to be discontinuous atT _c ,while for the isochore / _c 0.92, (P/T)_,x is continuous across the dew curve. It is found that this latter isochore cuts the dew curve at its highest temperature. These observations are discussed in terms of general thermodynamic arguments and theoretical predictions of the asymptotic behavior. We calculate (P/T)_,x from the scaling equation of state proposed by Leung and Griffiths for ³ He- ⁴ He mixtures, using their numerical parameters. In spite of some systematic deviations, especially in the two-phase region, there is in general good agreement with experimental results. In particular, the shape of the measured dew-bubble curve and the apparent discontinuity of (P/T)_,x along the critical isochore show excellent agreement with theory.Work supported by a grant from the National Science Foundation. A report of this work has been presented at the Washington Meeting of the APS [Bull. Am. Phys. Soc. 20, 618 (1975)].     

Dielectric properties of chemically vapour-deposited Si3N4

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si₃N₄ were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( _a.c.) of the amorphous CVD-Si₃N₄ was found to be less than that of the crystalline CVD-Si₃N₄ below 500° C, but became greater than that of the crystalline CVD-Si₃N₄ over 500° C due to the contribution of d.c. conductivity ( _d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si₃N₄ are smaller than those of the crystalline CVD-Si₃N₄ in all of the temperature and frequency ranges examined. The relationships of ^n-1, (- ) ^n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si₃N₄ were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si₃N₄ was smaller than that of the crystalline CVD-Si₃N₄.     

Torsional Oscillator Study of Thin Helium Films on Hydrogen Substrates

We have made torsional oscillator measurements of thin helium films on a Mylar surface preplated with 2 and 5 layers of H ₂ . The minimum ⁴ He coverage needed for superfluidity, or inert layer, n _o on both surfaces is found to be 6 mole/m ² . This is equivalent to 1/2 of a monolayer at bulk liquid density. The superfluid transition in coverages above n _o is similar to that found on bare Mylar, exhibiting the standard Kosterlitz-Thouless characteristics. We find no anomaly in _s or the dissipation in the film that can be identified with a second transition reported in recent third sound experiments.     

Underpinning of a simple blunt flaw fracture initiation relation

With the cohesive process zone representation of the micro-mechanistic processes that are associated with fracture as a basis, the author is involved in a wide-ranging research programme, the objective being to extend the fracture mechanics methodology for sharp cracks to blunt flaws, so as to take credit for the blunt flaw geometry. In earlier work, a Mode I fracture initiation relation has been derived, subject to the restriction that the process zone size s is small compared with the flaw depth (length) and any characteristic dimension other than the flaw root radius . The relation gives the critical elastic flaw-tip peak stress _pcr, and has been derived using a two-extremes procedure, whereby the separate, and indeed exact, solutions for small and large s/ values are blended together to give an all-embracing relation that is valid for all s/ values. _pcr is expressed in terms of the process zone material parameters and geometrical parameters but, for a wide range of flaw geometry parameters, _pcr essentially depends on only one geometrical parameter . This paper provides underpinning for the general thrust of the two-extremes procedure by appealing to exact results for the complete spectrum of s/ values from analyses of appropriate Mode III models. Results obtained by applying the two-extremes procedure are shown to be in very good agreement with the exact results.