An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.      

Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm²/V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VT_i (intrinsic threshold voltage).     

Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

Amorphous gallium-indium-zinc-oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO thin film transistors showed a high mobility of 8.2 cm²/Vldrs with on-to-off current ratios up to 10⁶. Excellent short channel characteristics were also obtained with a small shift of the threshold voltages and no degradation of subthreshold slopes as V_DS increased, even with short channel lengths of less than 100 nm. These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.     

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm²/Vldrs. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mum from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.     

1.5 kW激光二极管抽运Nd:YAG薄片激光器

报道了一台输出功率超过1.5 kW的激光二极管抽运Nd∶YAG双薄片激光器.设计了四通光学耦合系统,通过优化经微柱透镜准直后光束的发散角,实现了抽运光的近平顶分布.薄片激光介质镀完介质膜后镀Ti,Pt,Au实现金属化,再采用铟焊工艺焊接在铜微通道冷却器上,以提高散热效率和冷却的均匀性.采用两片直径40 mm,厚度1.3 mm的Nd∶YAG薄片激光介质,在两个二极管激光器阵列抽运下,当每个薄片上的抽运峰值功率为17.7 kW,占空比10%时,获得了平均功率1.52 kW的准连续激光输出,光-光转换效率达到43%,电-光转换效率超过20%.     

1.5kW激光二极管抽运Nd∶YAG薄片激光器

报道了一台输出功率超过1.5kW的激光二极管抽运Nd∶YAG双薄片激光器。设计了四通光学耦合系统,通过优化经微柱透镜准直后光束的发散角,实现了抽运光的近平顶分布。薄片激光介质镀完介质膜后镀Ti,Pt,Au实现金属化,再采用铟焊工艺焊接在铜微通道冷却器上,以提高散热效率和冷却的均匀性。采用两片直径40mm,厚度1.3mm的Nd∶YAG薄片激光介质,在两个二极管激光器阵列抽运下,当每个薄片上的抽运峰值功率为17.7kW,占空比10%时,获得了平均功率1.52kW的准连续激光输出,光-光转换效率达到43%,电-光转换效率超过20%。     

二极管泵浦薄片激光器的最新进展

综述了国外不同类型薄片激光器的技术现状,分析了不同结构薄片激光器所具有的技术优势,技术限制和发展潜力,评述了薄片激光器所具有的诱人的应用前景,指出了遏制薄片激光器进一步发展的瓶颈,展望了薄片激光器未来的发展方向.     

脉冲薄片激光源

介绍了基于几种脉冲产生机制的高级脉冲薄片激光源,包括再生放大和腔倒空技术。这些激光源可以产生几毫焦量级的的脉冲能量,重复频率可达到几十万赫兹,即平均输出功率超过100W。还讨论了这些激光源的有效腔内频率转换。     

Continuous Tuning and Efficient Intracavity Second-Harmonic Generation in a Semiconductor Disk Laser With an Intracavity Diamond Heatspreader

Using a wedged and antireflection-coated diamond heatspreader, a continuously tunable semiconductor disk laser with intracavity second-harmonic generation (SHG) is demonstrated. Output powers of > 600 mW tunable over 10 nm around 530 nm are obtained. Finite-element modeling shows that the use of a diamond heatspreader for thermal management - in contrast to substrate thinning approaches - permits power scaling across the 670-2300-nm range of these lasers. Using a green laser as an exemplar, this paper details the issues involved in translating this spectral coverage to the ultraviolet and visible via SHG. Polarization and wavelength selection are discussed and the adopted approaches presented. Almost 1 W of second-harmonic light at 530 nm is demonstrated, with an efficiency of 11% with respect to the incident pump power.     

Antimicrobial Gallium‐Doped Phosphate‐Based Glasses

Novel quaternary gallium‐doped phosphate‐based glasses (1, 3, and 5 mol % Ga₂O₃) were synthesized using a conventional melt quenching technique. The bactericidal activities of the glasses were tested against both Gram‐negative (Escherichia coli and Pseudomonas aeruginosa) and Gram‐positive (Staphylococcus aureus, methicillin‐resistant Staphylococcus aureus, and Clostridium difficile) bacteria. Results of the solubility and ion release studies showed that these glass systems are unique for controlled delivery of Ga³⁺. ⁷¹Ga NMR measurements showed that the gallium is mostly octahedrally coordinated by oxygen atoms, whilst FTIR spectroscopy provided evidence for the presence of a small proportion of tetrahedral gallium in the samples with the highest gallium content. FTIR and Raman spectra also afford an insight into the correlation between the structure and the observed dissolution behavior via an understanding of the atomic‐scale network bonding characteristics. The results confirmed that the net bactericidal effect was due to Ga³⁺, and a concentration as low as 1 mol % Ga₂O₃ was sufficient to mount a potent antibacterial effect. The dearth of new antibiotics in development makes Ga³⁺ a potentially promising new therapeutic agent for pathogenic bacteria including MRSA and C. difficile.     

全固化薄盘Yb:YAG激光器研究

本文介绍了Yb：YAG激光晶体的能级结构和吸收、发射光谱；研究了端面泵浦全固化Yb：YAG薄盘激光器的输出持性，获得了功率为2．1W的1030nm激光输出，光光转换效率为15％，斜效率为24．3％。     

激光二极管阵列侧面对称抽运薄片激光器

对激光二极管(LD)阵列5向侧面对称抽运Nd∶YAG薄片激光器进行了实验和模拟研究。薄片激光器的耦合系统由消像差透镜组和空心光波导组成,采用15mm×1.5mm的Nd∶YAG薄片进行初步实验,实验得到薄片激光器的激光输出平均功率为65.7W,光-光转换效率为10.5%,同时增益介质内具有较理想的荧光分布。同时考虑激光二极管在快轴和慢轴方向的发散特性及增益介质侧面的散射特性,采用光线追迹法,模拟并分析了增益介质内抽运光分布,模拟结果表明耦合系统具有88.3%的耦合效率,同时增益介质内具有较理想的抽运光分布,且与实验结果相吻合。     

激光二极管侧面抽运的Nd:YAG薄片激光器

报道了激光二极管(LD)侧面抽运的Nd:YAG薄片激光器.对影响侧面抽运薄片激光器性能的主要因素,即圆薄片增益介质内晶体光分布和沿径向的温度分布进行了理论分析和实验.实现了光-光转换效率为33.5%,峰值功率为230 W,光束参数乘积为21.6 mm·mrad的激光输出.实验结果表明,侧面抽运在薄片Nd:YAG晶体内可实现对称均匀的分布,沿径向的温度差大大减小;Nd:YAG/YAG薄片晶体的复合可满足侧面抽运的要求.这些技术和方法可应用于更高功率的侧面抽运薄片激光器.     

盘形激光器应用技术的发展趋势

1 引言 在目前新的应用领域中,具有高光束质量的LD泵浦盘形YAG激光器倍受市场的青睐. 本文主要介绍LD泵浦盘形激光器及其应用技术的发展趋势.     

Spectral Feature Analysis of Semiconductor Thin Disk Laser

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay...     

Synthesis of Au–CdS Core–Shell Hetero‐Nanorods with Efficient Exciton–Plasmon Interactions

The synthesis of large lattice mismatch metal‐semiconductor core–shell hetero‐nanostructures remains challenging, and thus the corresponding optical properties are seldom discussed. Here, we report the gold‐nanorod‐seeded growth of Au–CdS core–shell hetero‐nanorods by employing Ag₂S as an interim layer that favors CdS shell formation through a cation‐exchange process, and the subsequent CdS growth, which can form complete core–shell structures with controllable shell thickness. Exciton–plasmon interactions observed in the Au–CdS nanorods induce shell thickness‐tailored and red‐shifted longitudinal surface plasmon resonance and quenched CdS luminescence under ultraviolet light excitation. Furthermore, the Au–CdS nanorods demonstrate an enhanced and plasmon‐governed two‐photon luminescence under near‐infrared pulsed laser excitation. The approach has potential for the preparation of other metal‐semiconductor hetero‐nanomaterials with complete core–shell structures, and these Au–CdS nanorods may open up intriguing new possibilities at the interface of optics and electronics.     

Efficient Synthesis of Carbon Nanotube–Nanoparticle Hybrids

A simple and versatile approach has been developed to synthesize different carbon nanotube (CNT)–nanoparticle hybrid materials. The strategy is based on the nondestructive (noncovalent) functionalization of pristine CNTs and the subsequent in situ synthesis of a variety of different nanoparticles, including metal, semiconductor, and insulator particles, on the modified CNTs. This strategy has been demonstrated here with Pt, CdS, and silica nanoparticles. It is believe that this technique will provide a simple and convenient route to efficiently assemble a wide variety of nanoscale particles/clusters on the surfaces of CNTs, and will enable the construction of nanoscale heterostructures with novel functionalities in nanotechnology.     

Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current $I _{rm th}$ of 104 mA was obtained at a stripe width of 25 $mu$m and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at $1.3 I _{rm th}$.