SOI光电子集成

SOI（Silicon-on-Insulator)光电子集成已成为十分引人注目的研究课题，其工艺与CMOS工艺完全兼容，可以实现低成本的SOI基整片集成光电子回路。本文综述了近几年来SOI集成光电子器件的发展以及一些最新的研究进展，着重分析几种最新型光无源器件的工作原理和结构，包括SOI光波导、SOI光波导耦合器、SOI光波导开关、相位阵列波导光栅（PAWG）、基于SOI的光探测器等，并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展。     

硅晶体缺陷发光及应用

信息技术的发展要求在集成电路内部用光子代替电子来传导信息,这就使得硅基光源成为技术发展的方向和光电子集成的关键,是当前急需解决的科学挑战之一.硅晶体缺陷发光是十分重要的硅基发光现象,已引起广泛的关注.在硅基位错发光原理的基础上,综述了硅晶体中缺陷的光致发光和电致发光的研究进展,以及硅晶体缺陷在发光器件方面的应用.     

硅基光电集成材料及器件的研究进展

以硅基光电集成回路为主线，综述了不同的硅基光波导材料的制备技术和硅基光波导的制作工艺及其对光传输损耗的影响。分析了硅基光波导与锗硅光探测器集成用两种不同的耦合方式，阐明了波导与探测器集成的机理及设计理论基础。归纳出硅基键合激光器的四种技术方案，指出其共同优点是克服材料异质外延引起的晶格失配和热膨胀非共容，对实现OEIC行之有效。     

硅缺陷发光的研究概况

硅发光器件与硅读出电路的单片集成是实现全硅光电子集成的关键,因此Si基发光材料的研究极为重要。本文重点对各类硅缺陷的发光进行了综述,并介绍了它们应用于发光器件的研究进展。     

硅基材料的发光特性及机理

硅基发光材料及器件是实现光电子集成的关键,文章介绍了目前取得较大进展的包括多孔硅,掺铒硅,钠米硅等几种主要硅基材料的发光特性及发光机理。     

硅基发光材料研究进展

硅基发光材料是光电子集成的基础材料。发光多孔硅是硅基发光材料的一个新进展，已实现了硅基光电子集成。随着多孔硅研究的深化和纳米科学的发展，硅基发光材料正向纳米方向开拓，与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅然异质外延也呈现出新的发展趋势。     

硅基光致发光膜:(Zn2SiO4/Si):Tb/Mn的制备

利用溶胶-凝胶涂膜技术及高温固相反应技术,在硅片表面生长了掺铽和锰的两种高效硅基光致发光膜.XRD和吸收光谱分析测试结果表明,当固相反应温度高于850℃时,在硅片表面形成了晶态的Zn2SiO4薄膜.荧光光谱实验结果表明这种利用高温固相反应生成的掺铽或掺锰的Zn2SiO4薄膜的发光强度高,余辉为10ms数量级.本方法制备的硅基发光膜热稳定性及化学稳定性好,有希望与硅集成电路工艺兼容.     

离子注入技术与硅基发光材料

硅基发光材料是未来光电子集成的基础材料。离子注入技术在琪发光材料的研究与开发中有极重要的作用。多孔硅的发现是硅基发光材料的一项重大进展。     

半导体材料的发展及现状

1 引言 半导体材料的价值在于它的光学、电学特性可充分地应用于器件。自硅开始替代锗,直到现在,甚至以后很长一段时间里,硅仍将是大规模集成电路的主要材料。如在军事领域中应用的抗辐射硅单晶（NTD）、高效太阳能电池用硅单晶、红外CCD器件用硅单晶等。但在超高速集成电路和光电子领域,化合物半导体材料显示出了它不可替代的优势。 GaAs和InP基材料在10年前就应用到器件中了,成为化合物半导体基器件的主要支柱材料。随着微电子技术向高密度、高可靠性方向发展,对半导体材料的要求也越来越高。GaAs材料的异军突起,打破了Si材料一统天下的同     

纳米硅薄膜及其太阳电池研究进展

纳米硅薄膜具有新颖的结构特征和一系列独特的物理性质,可望应用于新型光电子器件、量子功能器件、集成电路等领域.本文综述了纳米硅薄膜的研究现状及其优良的光电性能和纳米硅薄膜太阳电池的研究进展,指出在生产制备与性能方面纳米硅薄膜太阳电池所具有的优势,具有良好的发展前景.     

Monocrystalline silicon used for integrated circuits: still on the way

With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impurities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insulator) are reviewed. It is proposed that the silicon manufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore’s law into a couple of decades.     

Application of nanostructured porous silicon in the field of optics. A review

Porous silicon nanostructures have attracted a great deal of interest during the past few years, due to their many remarkable properties. The high-efficiency visible photo- and electro-luminescence of this material opened the way to the development of silicon-based optoelectronic devices fully compatible with standard industry processes. In addition to these luminescent properties, nanostructured porous silicon shows a variety of other interesting properties, including tunable refractive index, low light absorption in the visible, high internal surface, variable surface chemistry, or high chemical reactivity. All these properties, along with its ease of fabrication and the possibility of producing precisely controlled layered structures make this material adequate for its use in a wide range of fields, such as optics, micro- and optoelectronics, chemical sensing or biomedical applications, for example. This article reviews the applications of nanostructured porous silicon that exploit its unique optical properties, as in the case of light emitting devices, filtered photodetectors, optical sensors, and others.     

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography

The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.     

The role of silicon micromachining in optical fiber sensing technologies

Silicon micromachining has the advantage of small scale and easy integration with electronic circuits and sensors, resulting in the production of miniaturized and smart microsystems with moving parts. The size of the microelectromechanical systems/microoptoelectromechanical systems devices is immediately compatible with the size of integrated optics (IOs), and is appropriate to control or manipulate optical radiations. This technology is, therefore, suitable to fabricate precision-defined optical components and offers relatively easy alignment procedures of optical parts. This paper examines the contribution of micromachined structures in the specific context of optical fiber sensing technology. A number of demonstrator sensors will be discussed, with special emphasis on sensors with micromachined IO structures, nanoscale scanning optical microscope sensors, and fiber IO circuits coupling systems.     

Substrate independent assembly of optical structures guided by biomolecular interactions

The chip-scale integration of optical components is crucial for technologies as diverse as optical communications, optoelectronics displays, and photovoltaics. However, the realization of integrated optical devices from discrete components is often hampered by the lack of a universal substrate for achieving monolithic integration and by incompatibilities between materials. Emergent technologies such as chip-scale biophotonics, organic optoelectronics, and optofluidics present a host of new challenges for optical device integration, which cannot be solved with existing bonding techniques. Here, we report a new method for substrate independent integration of dissimilar optical components by way of biological recognition-directed assembly. Bonding in this scheme is achieved by locally modifying the substrate with a protein receptor and the optical component with a biomolecular ligand or vice versa. The key features of this new technology include substrate independent assembly, cross-platform vertical scale integration, and selective registration of components based on complementary biomolecular interactions.     

New millennium frontiers on precision engineering

The need to establish ultraprecision mechanical fabrication processes to produce 'microfunctional structures' that have microstructures on their surfaces and/or inside and which are capable of performing various functions are inarguably growing increasingly stronger. In industries today, holographic optical elements (OHE), silicon-on-insulator (DOI) substrates and semiconductor devices wafers for ultralarge-scale integrated circuits(ULSI), microlens and microparts/components are good examples of microfunctional structures in the field of optoelectronics and mechatronics. For all these applications, the definition of precision engineering was changed by a few orders of magnitude. Some example of new precision engineering processes will be presented, which will include atomistic level polishing of AlTiC magnetic heads, microspherical lens fabrication and molecular dynamics (MD) simulation of the abrasive processes. Finally, some of the limitations of the precision engineering processes will be pointed out.     

Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater

Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic–photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong optical modulation in a static, self-holding fashion, but the scalability of present PCM-integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy-efficient switching units operated with low driving voltages, near-zero additional loss, and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. This work can potentially enable very large-scale CMOS-integrated programmable electronic–photonic systems such as optical neural networks and general-purpose integrated photonic processors.     

Gallium arsenide deep-level optical emitter for fibre optics

Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters.